CN205490509U - Integrated radio frequency receiver front end is put to binary channels high power switch low noise - Google Patents
Integrated radio frequency receiver front end is put to binary channels high power switch low noise Download PDFInfo
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- CN205490509U CN205490509U CN201620014323.0U CN201620014323U CN205490509U CN 205490509 U CN205490509 U CN 205490509U CN 201620014323 U CN201620014323 U CN 201620014323U CN 205490509 U CN205490509 U CN 205490509U
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Abstract
The utility model discloses a binary channels high power switch low noise is put the integration and is received the front end, and its structure is that to receive the front end be the binary channels design, its preparation method, include: 1 )Put the monolithic with two aluminum nitride substrate of silver thick liquid bonding, two gaAs low noises on the central metal substrate of QFN6 6 -40L standard packaging lead frame, 2 )A high -power, two well power PIN diode chips bond respectively on every aluminum nitride substrate, 3 )Between three PIN diode chip and aluminum nitride substrate, QFN6 6 -40L standard packaging lead frame pin, aluminum nitride substrate, gaAs low noise are put monolithic and QFN6 6 -40L standard packaging lead frame pin and all are connected through the bonded gold wire. The advantage: effectively reduced the system circuit size, work safe and reliable satisfies the receive channel of system gain and enlargies, low noise coefficient's requirement, and the reception sensitivity is high. The integrated level is expensive low, and the performance is excellent, and is easy -to -use.
Description
Technical field
The utility model relates to a kind of dual pathways high power switch LNA integrated radio-frequency receiving front-end based on QFN6 × 6-40L standard packaging, belong to mobile communication technology field.
Background technology
Mobile communication experienced by 1G and 2G, completes and to the transition of digital technology, 3G and 4G, mobile communication is pushed to broadband from arrowband from analogue technique.Along with 3G and 4G is the most commercial, it reveals day by day in speed, the limitation of the aspects such as seamless transit, and people propose new requirement for mobile communication technology.Extensive commercial 3G (Third Generation) Moblie, TD-SCDMA and the WIMAX system of wide-band mobile communication and forth generation mobile communication TD-LTE system all use tdd mode, in the base station system, power amplifier (PA) is exported by antenna by circulator afterwards, once antenna mismatch, high-power reflection, is easily caused the LNA damage receiving passage.Therefore, receive the transmitting branch of addition absorption reflection power in passage and can effectively protect reception passage.In receiving passage, transmitting branch antenna (ANT) is controlled transmitting-receiving switching by a high power switch (SW) to power termination (LOAD) and receiving branch antenna (ANT) between receiving terminal (RX)；Receiving the low-noise amplifier of passage and amplify antenna from the small-signal received in the air, its noise, non-linear, the performance such as coupling is most important to whole receiver.
Along with the development of science and technology, the progress of society, present mobile communication technology requires that radio-frequency devices, module develop to the direction of high selectivity, low cost and miniaturization.The development of third generation forth generation mobile communication system, traffic rate is greatly improved, and has higher requirement radio-frequency devices, module in high-power and high integration.
Summary of the invention
The utility model proposes a kind of dual pathways high power switch LNA integrated radio-frequency receiving front-end based on QFN6 × 6-40L standard packaging, its purpose is intended to the drawbacks described above overcome existing for prior art, meet the working condition of the significant power switching control of TDD system base station power amplification, safe and reliable work, and ensure that the passage that receives of complete machine has extremely low noise coefficient and higher receiving sensitivity；Improve the integrated level of receiving front-end, the high power switch of integrated two-way and LNA monolithic in QFN6 × 6-40L standard packaging, reduce cost, optimize performance.
Technical solution of the present utility model: a kind of dual pathways high power switch LNA integration receiving front-end, its structure is: comprise two-way transceiver channel, transmission channel (ANT-TX) uses a high-power PIN diode, the receiving branch of switch uses two middle power PIN diode to constitute tandem tap circuit as switch element, and the receiving branch at switch is followed by the reception passage being made up of GaAs LNA monolithic；Making the receiving front-end of dual pathways high power switch LNA integration in QFN6 × 6-40L standard packaging, two aluminium nitride substrates, two GaAs LNA monolithics are bonded on QFN6 × 6-40L standard packaging lead frame central metal substrate respectively；On two aluminium nitride substrates, the most bonding three PIN diode chips constitute transmit-receive switch switching circuit；After switch receiving branch, one GaAs LNA monolithic of cascade constitutes reception passage；By diode chip for backlight unit, GaAs LNA monolithic, connecting with gold wire bonding between aluminium nitride substrate and said chip with QFN6 × 6-40L corresponding pin of standard packaging lead frame, said chip refers to six PIN diode chips, two GaAs LNA monolithics and two aluminium nitride substrates.
Advantage of the present utility model:
1) twin-channel high power switch LNA can be realized in QFN6 × 6-40L standard packaging integrated, and radio frequency continuous wave 120W high-power under the conditions of can safe and reliable work；
2) TD-SCDMA, WIMAX and the requirement of the high-power switching control of TD-LTE system base station power amplification are met；Meet low-noise factor and the gain requirement of TD-SCDMA, WIMAX and TD-LTE UHF band reception passage, receive and passage uses integrated gallium arsenide LNA monolithic, without extra peripheral match circuit, whole receiving front-end noise coefficient can as little as 0.7dB, gain representative value reaches 31 dB, having higher sensitivity and integrated level, low cost, performance is excellent；
3) in QFN6 × 6-40L standard packaging, realize the integration of twin-channel high power switch LNA; more existing receiving front-end module; the application of twin-channel transmitting-receiving branch road is achieved in less size; it is little that product has size; versatility is good; standard packaging has more preferable large-scale production, effectively reduces the cost of product itself；Coupling in LNA monolithic in module, circuit the most easily realizes, and effectively reduces the size of user's peripheral circuit, reduces the circuit cost of user；
4) the GaAs LNA monolithic of coupling in using entirely, on the one hand simplifies the peripheral applications circuit of system, on the other hand can be prevented effectively from batch production process, separately makees the problem that the concordance caused by match circuit is poor.Use monolithic LNA circuit, there is concordance good, the feature that reliability is high；
5) multi-chip is used to assemble (MCM) technology, GaAs LNA monolithic, aluminium nitride substrate and PIN diode chip all use direct bond processing method, reduce the thermal resistance between chip and substrate, and avoid the impact encapsulating the additive effect brought to performance, high power switch uses high heat conduction aluminium nitride (ALN) substrate to carry out circuit design, it is bonded on QFN6 × 6-40L standard packaging central metal substrate by high heat conduction silver slurry, reduces the thermal resistance between PIN diode chip and application circuit.Use this design optimization module electrical property, make the reliability of module, product electrical property all get a promotion, reduce the use cost of module simultaneously.
This utility model is the receiving front-end of the dual pathways high power switch LNA one for the research and development of mobile communication machine system.Module uses advanced multichip modules technology (MCM), and standard packaging techniques, product has smaller szie, more high-isolation, greater power capacity, higher reliability, less noise coefficient, higher gain in the communication system of TDD mode of operation.
Accompanying drawing explanation
Fig. 1 is circuit structure of the present utility model and die bonding, wire bonding schematic diagram, in figure 1 to 40 totally 40 number word tables show 40 pins of QFN6 × 6-40L-40L standard packaging.
Fig. 2 is aluminium nitride substrate schematic diagram.
Fig. 3 is GaAs LNA monolithic schematic diagram.
Fig. 4 is application schematic diagram of the present utility model.
Fig. 5 is recommendation application circuit of the present utility model.
Detailed description of the invention
A kind of dual pathways high power switch LNA integrated radio-frequency receiving front-end based on QFN6 × 6-40L standard packaging, its structure is: comprise two-way transceiver channel, transmission channel (ANT-TX) uses a high-power PIN diode, the receiving branch of switch uses two middle power PIN diode to constitute tandem tap circuit as switch element, and the receiving branch at switch is followed by the reception passage being made up of GaAs LNA monolithic；Making the receiving front-end of dual pathways high power switch LNA integration in QFN6 × 6-40L standard packaging, two aluminium nitride substrates, two GaAs LNA monolithics are bonded on QFN6 × 6-40L standard packaging lead frame central metal substrate respectively；On two aluminium nitride substrates, the most bonding three PIN diode chips constitute transmit-receive switch switching circuit；After switch receiving branch, one GaAs LNA monolithic of cascade constitutes reception passage；By diode chip for backlight unit, GaAs LNA monolithic, connecting with gold wire bonding between aluminium nitride substrate and said chip with QFN6 × 6-40L corresponding pin of standard packaging lead frame, said chip refers to six PIN diode chips, two GaAs LNA monolithics and two aluminium nitride substrates.
The preparation method of a kind of dual pathways high power switch LNA integrated radio-frequency receiving front-end based on QFN6 × 6-40L standard packaging, comprises the following steps:
Step 1) starches bonding two aluminium nitride (AlN) substrates, two GaAs LNA monolithics with silver on QFN6 × 6-40L standard packaging lead frame central metal substrate；
Step 2) on each aluminium nitride (AlN) substrate, starch a bonding high-power PIN diode chip and two middle power PIN diode chips with silver respectively；
Between three PIN diode chips of step 3) and aluminium nitride substrate, between three PIN diode chips and QFN6 × 6-40L standard packaging lead frame pin, aluminium nitride substrate and QFN6 × 6-40L standard packaging lead frame pin, be all connected by bonding gold wire between GaAs LNA monolithic with QFN6 × 6-40L standard packaging lead frame pin.
Described selection has QFN6 × 6-40L standard packaging lead frame of central metal substrate, starches bonding AlN substrate with high heat conduction silver, can be effectively improved the heat-sinking capability of circuit, reduce additional thermal resistance on QFN6 × 6-40L standard packaging lead frame central metal substrate.
Described starches bonding two high-power PIN diode chips and four middle power PIN diode chips with high heat conduction silver in AlN substrate, is connected by gold wire bonding between these six PIN diode chips with AlN substrate, QFN6 × 6-40L standard packaging lead frame corresponding pin.
Described starches bonding two aluminium nitride substrates, two integrated gallium arsenide LNA monolithics with high heat conduction silver on QFN6 × 6-40L standard packaging lead frame central metal substrate, and two aluminium nitride substrates, two integrated gallium arsenide LNA monolithics are connected by gold wire bonding between QFN6 × 6-40L standard packaging lead frame corresponding pin.
Below in conjunction with the accompanying drawings technical scheme is described in further detail:
As it is shown in figure 1, the structural representation of dual pathways high power switch LNA integration receiving front-end.Use high heat conduction silver slurry that two aluminium nitride (AlN) substrate A, two GaAs LNA monolithic D are bonded on the central metal substrate relevant position in QFN6 × 6-40L-40L standard packaging lead frame, carry out conducting resinl solidification.
Then, use high heat conduction silver slurry that two high-power PIN diode chip B and four middle power diode chip C are bonded on the relevant position of aluminium nitride (AlN) substrate, carry out conducting resinl solidification.
By six PIN diode chips, connect with gold wire bonding between two GaAs LNA monolithics, two aluminium nitride substrates and between all chips with QFN6 × 6-40L-40L corresponding pin of standard packaging lead frame.
After above-mentioned technique completes, device encapsulated, test.
Embodiment
The main electrical characteristics of high power switch bear power, isolation etc..In addition to needs meet electrical characteristics index, in addition it is also necessary to emphasis is it is considered that the reliability design of switch long-term work, and thermal design is crucial.The thermal design of high power switch is broadly divided into: reduces the insertion loss of switch and reduces thermal resistance two aspect of switch.Loss during diode forward conducting depends primarily on the forward conduction resistance of diode, on the premise of therefore selecting to meet the requirement such as junction capacity, the most pressure, speed, the linearity, and forward conduction resistance RSMinimum PIN diode.Switch thermal resistance aspect, consider the PIN diode selecting intrinsic thermal resistance little, select the material that heat conductivity is high as switch substrate simultaneously, invention uses aluminium nitride (AlN) thick for 0.25mm, pcb board electric circuit diagram design, surface gold-plating is carried out according to the circuit diagram of Fig. 2.Using multi-chip packaging technology, processing direct to diode chip for backlight unit, it is to avoid additional thermal resistance, the design ensures the heat radiation that diode is good in terms of internal thermal resistance and external thermal resistance two.
The effect of GaAs low-noise amplifier monolithic is that the docking collection of letters number is amplified, and constitutes and receives passage, meets noise coefficient and the gain requirement receiving passage.Noise coefficient, the requirement such as gain and the linearity is considered during monolithic design.
The application of the present invention is as shown in Figure 4: during emission state, be switched to ANT-TX passage through the present invention, as PA-out end exists mismatch, high-power is reflected into ANT-TX passage, and power is by load absorption.During reception state, signal is inputted by ANT, is switched to ANT-RX through the present invention and receives passage, and the docking collection of letters number carries out gain amplification.Under room temperature, dual pathways high power switch LNA integration receiving front-end TD-LTE frequency range refer mainly to indicate:
1. receiving passage: noise coefficient representative value is 1.1 dB, and gain representative value is 31dB, input 1dB compression point is-15dBm；
2. transmission channel: power capacity is 120W, insertion loss representative value is 0.3dB.
Claims (1)
1. a dual pathways high power switch LNA integrated radio-frequency receiving front-end based on QFN6 × 6-40L standard packaging, it is characterized in that: comprise two-way transceiver channel, transmission channel ANT-TX is a high-power PIN diode, the receiving branch of switch is that two middle power PIN diode constitute tandem tap circuit as switch element, and the receiving branch at switch is followed by the reception passage being made up of GaAs LNA monolithic；Being the receiving front-end of dual pathways high power switch LNA integration in QFN6 × 6-40L standard packaging, two aluminium nitride substrates, two GaAs LNA monolithics are bonded on QFN6 × 6-40L standard packaging lead frame central metal substrate respectively；On two aluminium nitride substrates, the most bonding three PIN diode chips constitute transmit-receive switch switching circuit；After switch receiving branch, one GaAs LNA monolithic of cascade constitutes reception passage；By diode chip for backlight unit, GaAs LNA monolithic, connecting with gold wire bonding between aluminium nitride substrate and said chip with QFN6 × 6-40L corresponding pin of standard packaging lead frame, said chip refers to six PIN diode chips, two GaAs LNA monolithics and two aluminium nitride substrates.
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| CN201620014323.0U CN205490509U (en) | 2016-01-07 | 2016-01-07 | Integrated radio frequency receiver front end is put to binary channels high power switch low noise |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105703786A (en) * | 2016-01-07 | 2016-06-22 | 南京国博电子有限公司 | Dual channel large power switch low noise amplifier integrated radio frequency reception front end and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105703786A (en) * | 2016-01-07 | 2016-06-22 | 南京国博电子有限公司 | Dual channel large power switch low noise amplifier integrated radio frequency reception front end and preparation method |
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Address after: 210016 No.166, zhengfangzhong Road, moling street, Jiangning District, Nanjing City, Jiangsu Province Patentee after: Nanjing Guobo Electronics Co.,Ltd. Address before: 210016 No.166, zhengfangzhong Road, moling street, Jiangning District, Nanjing City, Jiangsu Province Patentee before: NANJING GUOBO ELECTRONICS Co.,Ltd. |