CN205488070U - Wafer carrier with configuration of a plurality of depressions - Google Patents

Abstract

The utility model relates to a wafer carrier with configuration of a plurality of depressions. This wafer carrier structure is for to be used together with the chemical vapor deposition device, and this wafer carrier includes: body, this body have the top surface and the basal surface of mutual disposition each other, and a plurality of depressions, a plurality of depressions are injectd the wafer carrier in the surface of top, a serial communication port, a plurality of depressions comprise the depression between 34 to 36 altogether, and every depression arranges along a circle in the three circle, wherein three circle each other concentric and with by the circular profile that the periphery formed on top surface is concentric.

Description

There is the chip carrier of multiple depression configuration

Technical field

This utility model relates in general to semiconductor fabrication, and particularly relates to chemical gaseous phase deposition (CVD) technique And relevant device, for keeping semiconductor wafer during technique.

Background technology

Other high property at light emitting diode (LED) and such as laser diode, photo-detector and field-effect transistor In the manufacture of energy device, chemical gaseous phase deposition (CVD) technique is typically used to use on sapphire or silicon substrate The material of such as gallium nitride grows thin film stack.CVD instrument includes processing chamber, and this process chamber is sealing ring Border is to allow the gas injected in the upper reaction of substrate (the usually form of wafer) with growing film layer.This manufacture sets The example of standby current product line is to be manufactured by the Veeco Instruments Inc. of Plainview, New YorkEPIK series with metal organic chemical vapor deposition (MOCVD) system.

Control some technological parameters of such as temperature, pressure and gas flow rate with the crystal growth desired by acquisition.Use Different materials and technological parameter grow different layers.Such as, typically, by the chemical combination of such as Group III-V semiconductor The device that thing quasiconductor is formed is formed by using MOCVD growth this compound semiconductor layer of continuous print. In the art, wafer is exposed in the combination of gas, and typically, this gas includes the source as III metal Metallo-organic compound, and also include the V flowed on a surface of a wafer when wafer keeps at elevated temperatures The source of race's element.Generally, metallo-organic compound and group V source and the carrier gas combination being substantially not involved in reaction, this load Gas e.g. nitrogen.One example of Group III-V semiconductor is gallium nitride, can having at such as sapphire wafer Suitably form gallium nitride by the reaction of Organogallium compound and ammonia on the substrate of interstitial void.At cvd nitride gallium Typically this wafer is maintained at a temperature of about 1000-1100 DEG C with during related compound.

Occurring in the MOCVD technique of crystal growth by the chemical reaction on substrate surface, it is necessary to the least Heart controls technological parameter to guarantee to carry out this chemical reaction under conditions of required.Even if it is little in process conditions Change is likely to negatively affect device quality and produce yield.Such as, if cvd nitride gallium indium layer (gallium and Indium layer), the change of wafer surface temperature will cause the composition of deposited layer and the change of band gap.Because Indium has relatively high vapour pressure, and the layer deposited in the wafer area that surface temperature is higher will have relatively low indium Ratio and bigger band gap.If the layer deposited is active layer, the luminescent layer of LED structure, then by this wafer The radiation wavelength of the LED formed also will fade to unacceptable degree.

In MOCVD processes chamber, the semiconductor wafer of growing film layer is arranged at and is referred to as chip carrier thereon Atwirl carousel (carousel) on, be uniformly exposed to the surface making them within reaction chamber In order to deposited semiconductor material in atmosphere.Rotating speed is about 1000RPM.This chip carrier is typically by such as stone The highly heat-conductive material machining of ink out, and is often coated with the protective layer of such as carbofrax material.Each crystalline substance Sheet carrier has one group of circular depressions (indentation), or depression (pocket), is placed with list in its top surface Individual wafer.Typically, wafer is supported for the lower surface positioned in spaced relation with each depression to allow at this wafer Perimeter flowing gas.U.S. patent application publication No.2012/0040097, U.S. patent No.8092599, U.S. patent No.8021487, U.S. patent application publication No.2007/0186853, U.S. patent No.6902623, U.S., patent No.6506252 and U.S. patent No.6492625 describe some examples of relevant technology, by drawing It is herein incorporated with by the disclosure of which.

Make the wafer with the exposed surface of wafer at axle (spindle) this chip carrier of upper support in reaction chamber The top surface of carrier is upwardly toward gas distributing device.As the shaft rotates, this gas is directed downwardly to this wafer load The periphery of this chip carrier on the top surface of body and is flowed to through this top surface.By being arranged on below this chip carrier Port from reaction chamber, discharge the gas used.By heating element heater, this chip carrier is maintained at desired liter At a temperature of height, this heating element heater is typically located in the stratie under the basal surface of this chip carrier. These heating element heaters are maintained at a temperature of on the temperature desired by this wafer surface, typically, however by this gas Body distributor is maintained at a temperature of just under desired reaction temperature to prevent gas premature reaction.Cause And, heat to the transmission of the basal surface of this chip carrier and flows to single crystalline substance upwardly through chip carrier from this heating element heater Sheet.

Air-flow on wafer depends on the radial position of each wafer and changes, owing to during rotation it is faster Speed, the wafer of outermost position stands high flow velocities.On each single wafer, even there may be temperature non-all Even property, i.e. cold spot and focus.One variable factor of the formation affecting temperature non-uniformity is the depression in chip carrier Shape.Generally, pocket shapes forms circle in the surface of this chip carrier.Owing to chip carrier rotates, thus This wafer by substantial centripetal force, causes crystalline substance at its outmost edge (i.e. from the edge that rotary shaft is farthest) place Sheet bears against the inwall of each depression in this chip carrier.In this case, at these external margins and the depression of wafer Edge between exist be in close contact.Conduction of heat to the increase of these outermost parts of wafer causes bigger temperature Heterogeneity, makes above-mentioned problem worse further.Make an effort with by increasing in the edge of wafer and depression Gap between wall minimizes temperature non-uniformity, including by a part that chip design is edge be flat (i.e. " flat " wafer).This flat part of wafer produces gap reduction and the contact point of the inwall of this depression, thus delays And temperature non-uniformity.The other factors of the thermal uniformity that impact runs through this wafer kept by this chip carrier includes crystalline substance The Heat transmission of sheet carrier and emission characteristics, and combine the layout of wafer pocket.

In order to realize temperature homogeneity, another the desired characteristic for chip carrier is to increase CVD technique Volume of production.In increasing process throughput, the role of this chip carrier is to maintain substantial amounts of single wafer.Offer has more The chip carrier influence of arrangement thermal model of multi-wafer.Such as, owing to the radiant heat from chip carrier edge is lost, lean on The part of antermarginal chip carrier tends to be at ratio under other parts lower temperature.

Accordingly, it would be desirable to the temperature homogeneity solved wherein in high density layouts and mechanical stress for chip carrier Practical Solution.

Utility model content

Chip carrier includes that new depression is arranged.This layout described herein is easy to Heat transmission and is also had for circular wafer raw The high packed density (high packing density) of long depression.

According to first aspect of the present utility model, it is provided that a kind of chip carrier, this chip carrier is configured to and chemistry gas Phase precipitation equipment is used together, and this chip carrier includes: body, this body have the top surface that is arranged opposite to each other and Basal surface；And multiple depression, the plurality of depression is limited in the described top surface of described chip carrier.Described Multiple depressions are made up of the depression between altogether 34 to 36, and each depression is along in three circles Circle arrange, wherein said three circles concentrically with respect to one another and with the circular contour formed by the periphery of described top surface with The heart.

According to second aspect of the present utility model, according in the chip carrier of first aspect, in the plurality of depression Six depressions, first circle in described three circles is arranged；12 depressions in the plurality of depression are around described three Second circle in circle is arranged；And the 3rd circle that 18 depressions in the plurality of depression are in described three circles Arrange.

According to the third aspect of the present utility model, according in the chip carrier of first aspect, in the plurality of depression Five depressions, first circle in described three circles is arranged；12 depressions in the plurality of depression are around described three Second circle in circle is arranged；And the 3rd circle that 18 depressions in the plurality of depression are in described three circles Arrange.

According to fourth aspect of the present utility model, according in the chip carrier of first aspect, in the plurality of depression Five depressions, first circle in described three circles is arranged；11 depressions in the plurality of depression are around described three Second circle in circle is arranged；And the 3rd circle that 18 depressions in the plurality of depression are in described three circles Arrange.

According to the 5th aspect of the present utility model, according in the chip carrier of first aspect, described first circle is by institute State second circle around, and described second circle by described 3rd circle around.

According to the 6th aspect of the present utility model, according to first or the 5th aspect chip carrier in, the plurality of recessed Each depression in cave all includes the depression diameter of about 50mm.

According to the 7th aspect of the present utility model, according to first or the 5th aspect chip carrier in, the plurality of recessed Each depression in cave all includes that the degree of depth is of about the radial wall of 430 μm.

According to eighth aspect of the present utility model, according in the chip carrier of first aspect, described chip carrier also wraps Include the locking feature being arranged on described basal surface.

According to the 9th aspect of the present utility model, according in the chip carrier of eighth aspect, described locking feature cloth Put at the geometric center of described basal surface.

According to the tenth aspect of the present utility model, in the chip carrier according to the 8th or the 9th aspect, described locking spy The portion that levies selects free spline, chuck or the group of lock control accessory composition.

According to the 11st aspect of the present utility model, according in the chip carrier of first aspect, described top surface and institute State basal surface and all include a diameter, and the diameter of described top surface is more than the diameter of described basal surface.

According to the 12nd aspect of the present utility model, according in the chip carrier of first aspect, described chip carrier structure Make as being used together with metal oxide chemical vapor deposition device.

According to the 13rd aspect of the present utility model, according in the chip carrier of second or third aspect, described depression Interconnect via interstitial air space.

According to fourteenth aspect of the present utility model, according in the chip carrier of fourth aspect, every in described depression Individual depression all includes par, and this par is arranged to adjacent with another depression in the depression in same circle.

Accompanying drawing explanation

After the detailed description considering the various embodiment of following this utility model together with accompanying drawing, can be more fully understood from this Utility model, wherein:

Fig. 1 is the schematic diagram that the MOCVD according to an embodiment processes chamber.

Fig. 2 is the axonometric chart of the chip carrier with 36 depression configurations according to an embodiment.

Fig. 3 is the top view of the chip carrier with 36 depression configurations according to an embodiment.

Fig. 4 is the side view of the chip carrier with 36 depression configurations according to an embodiment.

Fig. 5 is the upward view of the chip carrier with 36 depression configurations according to an embodiment.

Fig. 6 is the part detail view of the chip carrier with 36 depression configurations according to an embodiment, it is shown that Single depression from axonometric chart.

Fig. 7 to Fig. 9 describes an alternate embodiment of chip carrier.

Figure 10 to Figure 12 describes another alternate embodiment of chip carrier.

Detailed description of the invention

Fig. 1 shows the chemical vapor depsotition equipment according to an embodiment of the present utility model.Reaction chamber 10 limits Process environments space.Gas distributing device 12 is arranged in the end of this cavity.There is gas distributing device 12 Described end be referred to here as reaction chamber 10 " top " end.This one end in this chamber is typically, but not necessarily, arranged At the top in this chamber under normal gravity reference frame.Thus, used herein in downward direction referring to fills from gas distribution Put 12 directions left；And upwardly direction refers to the intracavity direction towards gas distributing device 12, regardless of these Whether direction aligns with gravity direction up and down.Similarly, dress is distributed herein with reference to reaction chamber 10 and gas Put the reference frame of 12 to describe " top " and " end " surface of element.

Gas distributing device 12 is connected to for supplying the such as carrier gas and reaction gas used in wafer processing process The source 14,16 and 18 of place's process gases of body, this reacting gas for example, metallo-organic compound and the source of V race metal. Gas distributing device 12 is arranged to receive the stream of process gases at various gas and usual guiding the most in a downward direction Dynamic.It is desirable that gas distributing device 12 is additionally coupled to cooling system 20, this cooling system is arranged to make liquid follow Ring passes gas distributing device 12 to make the temperature of gas distributing device be maintained at desired temperature during operation Under.The cooling that can provide similar arranges that (not shown) is to cool down the wall of reaction chamber 10.Reaction chamber 10 is further equipped with Gas extraction system 22, this gas extraction system is arranged through being located on or near the port (not shown) bottom chamber from chamber 10 Inside remove waste gas so that allow there is continuous print air-flow in a downwardly direction from gas distributing device 12.

Axle 24 is arranged in intracavity so that the central axis 26 of axle 24 upwardly extends in side up and down.By including Traditional rotation passing device (rotary pass-through device) 28 of bearing and sealing member (not shown) is by axle 24 install to chamber so that axle 24 can rotate about central axis 26, and holding shaft 24 and the wall of reaction chamber 10 Between sealing.This axle has and is positioned at its top end, is i.e. positioned at the end closest to gas distributing device 12 of this axle Accessory 30.As discussed further below, accessory 30 is adaptable to be releasably engaged the crystalline substance of chip carrier One example of sheet carrier maintaining body.In described specific embodiment, accessory 30 is generally toward the top of axle Hold Frusto-conical element that is tapered and that terminate at flat top surface.Frusto-conical element is to have putting down of circular cone The element of butt shape.Axle 24 is connected to the rotary drive mechanism 32 of such as electric motor drive, and it is arranged as making axle 24 Rotate about central axis 26.

Heating element heater 34 is arranged on intracavity and around axle 24 below accessory 30.Reaction chamber 10 is additionally provided with and leads to cup The entrance 36 of 38, and for closing and open the door 40 of this entrance.The most exemplarily only depict door 40, And being shown as between closed position and open position removable, wherein this closed position is shown in solid, in described pass In closed position, the inside of this goalkeeper's reaction chamber 10 isolates with cup 38, and this open position is located shown in broken lines 40 '. This is 40 equipped with suitable control and the actuating mechanism for moving door between open and closed positions.? In practice, this door can be included in moveable shutter (shutter) on direction up and down, such as special at U.S. Disclosed in profit No.7276124, by with reference to the disclosure of which is incorporated herein by.This described in FIG sets For including loader mechanism (not shown), chip carrier can be moved to this chamber from cup 38 by this loader mechanism In and make this chip carrier engage with axle 24 in the operating condition, and also can make chip carrier removal axle 24 And enter cup 38.

This equipment also includes multiple chip carrier.Under the operating condition that figure 1 illustrates, in operating position, first is brilliant Sheet carrier 42 is arranged on the inside of reaction chamber 10, and the second chip carrier 44 is arranged in cup 38.Each wafer Carrier includes body 46, and this body 46 substantially has the disc format (seeing Fig. 2) of central axis.Body 46 Be formed as symmetric about the axis.In operating position, the axis of chip carrier body and the central axis 26 of axle 24 Overlap.Body 46 can be formed as the combination of single-piece or more than one piece.Such as at U.S. patent application publication Disclosed in No.20090155028, by with reference to the disclosure of which being incorporated herein by, chip carrier body is permissible Including defining the hub portion (hub) of zonule of the body around this central axis and defining the surplus of disc-shaped body The major part that remaining part is divided.Body 46 is preferably formed by following material: this material does not pollute this technique and can be through By the temperature encountered in firmly technique.Such as, the major part of this disk can be formed as, and it is mostly or whole Formed by the material of such as graphite, carborundum or other refractory material individually.Body 46 is generally of smooth top table Face 48 and basal surface 52, they extend generally parallel to each other and are approximately perpendicular to the central axis of this disk.Body 46 also have the one or more wafers holding features being adapted to keep multiple wafer.

In operation, the wafer 54 of the Disc-like wafers such as formed by sapphire, carborundum or other crystalline substrates It is arranged in each depression 56 of each chip carrier.Typically, the thickness that wafer 54 has is than the chi of its first type surface Very little little.Such as, the Circular wafer of diameter about 2 inches (50mm) can be about 430 μ m-thick or less.As Shown in Fig. 1, wafer 54 is disposed an outwardly facing the top surface of top so that this top surface is at the top of chip carrier Expose.It should be noted that in various embodiments, chip carrier 42 carries the wafer of varying number.Such as, one In individual example embodiment, chip carrier 42 may adapt to keep six wafers.In another example embodiment, as Shown in Fig. 2, this chip carrier keeps 25 wafers.

In typical MOCVD technique, the chip carrier 42 that will be loaded with wafer is loaded into reaction from cup 38 In chamber 10 and place in the operating position that figure 1 illustrates.In this case, the top surface of wafer towards top, Towards gas distributing device 12.Heating element heater 34 activated, and rotary drive mechanism 32 operates so that 24 turns of axle Move and therefore make chip carrier 42 rotate around axis 26.Typically, with the rotation turned every about minute 50-1500 Speed rotary shaft 24.Process gas supply unit 14,16 and 18 to activated to be supplied by gas distributing device 12 Gas.This gas transmits downwards towards chip carrier 42, through the top surface 48 of chip carrier 42 and wafer 54, And it is sent to outlet down around the surrounding of chip carrier and is sent to gas extraction system 22.Thus, wafer carries The top surface of body and the top surface of wafer 54 are exposed to place's process gases, and at this, process gases includes being supplied by various process gases Answer the mixing of the various gases that unit supplied.Most typically ground, the place's process gases at top surface is mainly supplied by carrier gas The carrier gas answering unit 16 to supply forms.In typical chemical vapor deposition method, this carrier gas can be nitrogen, And therefore the place's process gases at chip carrier top surface is mainly by the nitrogen with a certain amount of reacting gas composition Gas composition.

Heat is mainly transmitted the basal surface 52 to chip carrier 42 by radiant heat transfer by heating element heater 34.Execute The heat of the basal surface 52 adding to chip carrier 42 is upward through the body 46 of chip carrier and flows to chip carrier Top surface 48.The heat being communicated up through body also extends through gap and is passed up to the basal surface of each wafer, and And the top surface of wafer 54 it is passed up to through this wafer.From the top surface 48 of chip carrier 42 and from wafer Top surface is to the cooler element in process chamber, such as to processing the wall in chamber and to gas distributing device 12, radiations heat energy. Also from the top surface 48 of chip carrier 42 and the top surface of wafer to the process gas transmission heat through these surfaces.

In the embodiments described, this system includes multiple features, and these features are designed to determine each crystalline substance The thermal uniformity on the surface of sheet 54.In the present embodiment, temperature analysis system 58 receives temperature information, and this temperature is believed Breath can include the temperature from temperature monitor 60 and monitoring temperature positional information.It addition, temperature analysis system 58 Receiving chip carrier positional information, it may be from rotary drive mechanism 32 in one embodiment.This has been had to believe Breath, temperature analysis system 58 constructs the temperature profile of the depression 56 on chip carrier 42.Temperature Distribution chart Show the heat distribution on each depression 56 or the surface of wafer 54 that is included in.

Fig. 2 is the axonometric chart of the chip carrier 142 according to an embodiment.Fig. 3 is the vertical view of same chip carrier 142 Figure.Chip carrier 142 includes the body 146 with top surface 148 and is defined in 36 depressions 162 therein. In the embodiment illustrated in figs. 2 and 3, depression 162 is arranged in three round R1, R2 and R3, Mei Geyuan It is all concentric with the circle limited by the outward flange of body 146.In radially inner R1, six depressions 162 are in side It is evenly spaced apart on Wei.Similarly, in radial direction in circle R2,12 depressions 162 in orientation equably between Separate.In radial direction cylindrical R3,18 depressions 162 are evenly spaced apart in orientation.Each depression 162 is Being formed at the aperture in body 146, this aperture is substantially perpendicular to extend with lower plane: wherein end face 148 is along this Horizontal layout.

Being advantageous in that of the layout of the depression described in Fig. 2 with Fig. 3: keep relative highly dense on top surface 148 While the depression 162 of degree, it provides the thermal uniformity of aspiration level.In an embodiment, top surface 148 is permissible There is the diameter of about 300mm.Back pocket 162 be dimensioned so as to fit in this region.Such as, In an embodiment, depression 162 can have the diameter of about 50mm.

As shown in Figures 2 and 3, at each circle R1, R2 with R3, depression 162 is mutually overlapping and thus raw Long wafer in each depression 162 connects with the wafer being grown in adjacent depression 162.When growing completely, The all wafers being grown in depression 162 and other transputer each being grown in any depression 162 in identical circle Tool interconnects.Wafer then can cut as required.Owing to these wafers are grown to mutual mechanical couplings, at each list Solely in depression 162, the wafer of growth can not rotate along with main body 146 and rotate, as previously described, and this rotation The damage of the wafer grown may be caused, at least along their edge damage.

Fig. 4 is the side view of the chip carrier 142 of Fig. 2 and Fig. 3, is shown in side view.Figure 4 illustrates regards In figure, it can be seen that the relative different in size between top surface 148 and basal surface 152.Especially, top surface Also top and bottom towards the paper as shown in Fig. 4 extends, or enters in the view shown in figs. 2 and 3 One step is to radially extending.The each depression 162 previously described in figs. 2 and 3 from top surface 148 towards end table Face 152 extends.Basal surface 152 provides solid substrate, wafer can be grown in chip carrier in this solid substrate In 142.

Fig. 5 is the upward view previously with respect to the chip carrier 142 described by Fig. 2 to Fig. 4.As shown in Figure 5, brilliant Sheet carrier 142 be included in bottom surface 152 in the minds of locking feature 164.Locking feature 164 is configured to all Other parts such as the accessory 30 of the axle 24 previously described in FIG engage.In various embodiments, lock-in feature Portion 164 can include such as spline (spline), chuck (chuck) or lock control accessory (keyed fitting).Belonging to The technical staff in field is it will be appreciated that various mechanism can apply angular momentum from adjacent elements to chip carrier 142.

Bottom surface 152 can be any material, and is designed in an embodiment be easy to Heat transmission.As it was previously stated, Wish in an embodiment to transmit to bottom surface 152 from neighbouring thermal element (the such as heating element heater 34 shown in Fig. 1) Heat.Thus, bottom surface 152 can be relatively low refraction materials or can be by coated by this material.

Chip carrier 142 can be formed by being suitable to epitaxially grown any material on it, in an embodiment, and such as graphite Or coated with graphite material.In other embodiments, the material constituting chip carrier 142 can be chosen as coupling to be wished The lattice hoped is arranged or size.Similarly, various sizes of depression 162 can be used according to the wafer of hope growth.

Fig. 6 shows the partial perspective view of one of them depression 162.Each depression 162 includes sidewall 166, removes Outside interstitial air space 170, it is the most cylindrical, the depression that its pocket 162 is adjacent with same circle 162A and 162B overlaps.The bottom of the cylinder formed by sidewall 166 is substrate 168.In an embodiment, sidewall 166 degree of depth can with about 430 μm.

Fig. 7 to Fig. 9 describes an alternate embodiment of the chip carrier 242 including 35 depressions 262.Figure Each assembly shown in 7 to Fig. 9 is substantially similar to the spy of the respective figure labelling of the embodiment described by Fig. 2 to Fig. 6 Levy.In order to clear, the same parts in Fig. 7 to Fig. 9 is numbered corresponding to their corresponding component in Fig. 2 to Fig. 6, And (the most such as, chip carrier 142 is substantially similar to chip carrier 242, and depression 162 to iteration 100 It is substantially similar to depression 262, etc.).Although some aspects of these features may be different, such as due to wafer The difference of the depression 262 on carrier 242 configures and causes the difference of interstitial air space 270 size, but about Fig. 2 Can equally be well applied to about the embodiment shown in Fig. 7 to Fig. 9 to the previously described benefit being configured so that of Fig. 6.

Figure 10 to Figure 12 describes an alternate embodiment of the chip carrier 342 including 34 depressions 362. Most of assembly shown in Figure 10 to Figure 12 is substantially similar to be previously described about Fig. 2 to Fig. 6 or Fig. 7 to Fig. 9 The feature of reference numeral of embodiment, and iteration 100 (the most such as, chip carrier 142 and 242 is substantially Similar in appearance to chip carrier 342, and depression 162 and 262 is substantially similar to depression 362, etc.).One exception Being par 372A and 372B, it is arranged at the immediate point between depression 362 with the adjacent depression in circle. Par 372A and 372B allows there are enough spaces between adjacent depression 362.Therefore, at Figure 10 to figure In embodiment shown in 12, depression 362 does not has and the embodiment institute described about Fig. 2 to Fig. 6 and Fig. 7 to Fig. 9 Previously interconnected as display.Par 372A and 372B is possible to prevent to be grown in during epitaxial growth further Wafer in each depression 362 rotates.

These embodiments are used as the purpose of example and unrestricted.Additional embodiment is in the claims.It addition, to the greatest extent Pipe describes aspect of the present utility model with reference to specific embodiment, but those skilled in the art will recognize that Can make in form and details in the case of without departing from scope of the present utility model defined by the claims Change.

Claims (14)

1. a chip carrier, this chip carrier is configured to be used together with chemical vapor deposition unit, and this chip carrier includes:

Body, this body has the top surface and basal surface being arranged opposite to each other；And

Multiple depressions, the plurality of depression is limited in the described top surface of described chip carrier；

It is characterized in that, the plurality of depression is made up of the depression between altogether 34 to 36, each depression is arranged along in three circles one circle, and wherein said three circles are concentrically with respect to one another and concentric with the circular contour formed by the periphery of described top surface.

2. chip carrier as claimed in claim 1, it is characterised in that

First circle in described three circles of six depressions in the plurality of depression is arranged；

Second circle in described three circles of 12 depressions in the plurality of depression is arranged；And

The 3rd circle in described three circles of 18 depressions in the plurality of depression is arranged.

3. chip carrier as claimed in claim 1, it is characterised in that

First circle in described three circles of five depressions in the plurality of depression is arranged；

Second circle in described three circles of 12 depressions in the plurality of depression is arranged；And

The 3rd circle in described three circles of 18 depressions in the plurality of depression is arranged.

4. chip carrier as claimed in claim 1, it is characterised in that

First circle in described three circles of five depressions in the plurality of depression is arranged；

Second circle in described three circles of 11 depressions in the plurality of depression is arranged；And

The 3rd circle in described three circles of 18 depressions in the plurality of depression is arranged.

5. such as chip carrier in any one of the preceding claims wherein, it is characterised in that first circle by second circle around, and second circle by the 3rd circle around.

6. chip carrier as claimed in claim 1, it is characterised in that each depression in the plurality of depression all includes the depression diameter of 50mm.

7. chip carrier as claimed in claim 1, it is characterised in that each depression in the plurality of depression all includes the radial wall that the degree of depth is 430 μm.

8. chip carrier as claimed in claim 1, it is characterised in that described chip carrier also includes the locking feature being arranged on described basal surface.

9. chip carrier as claimed in claim 8, it is characterised in that described locking feature is arranged at the geometric center of described basal surface.

10. chip carrier as claimed in claim 8 or 9, it is characterised in that described locking feature selects free spline, chuck or the group of lock control accessory composition.

11. chip carriers as claimed in claim 1, it is characterised in that described top surface and described basal surface all include a diameter, and the diameter of described top surface is more than the diameter of described basal surface.

12. chip carriers as claimed in claim 1, it is characterised in that described chip carrier is configured to be used together with metal oxide chemical vapor deposition device.

13. according to the chip carrier described in Claims 2 or 3, it is characterised in that described depression interconnects via interstitial air space.

14. chip carriers according to claim 4, it is characterised in that each depression in described depression all includes par, this par is arranged to adjacent with another depression in the depression in same circle.