CN205484876U - Blast barrier film and have this blast barrier film's quantum dot membrane, backlight unit - Google Patents
Blast barrier film and have this blast barrier film's quantum dot membrane, backlight unit Download PDFInfo
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- CN205484876U CN205484876U CN201620047126.9U CN201620047126U CN205484876U CN 205484876 U CN205484876 U CN 205484876U CN 201620047126 U CN201620047126 U CN 201620047126U CN 205484876 U CN205484876 U CN 205484876U
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Abstract
The utility model provides a blast barrier film and have this blast barrier film's backlight unit, blast barrier film includes the substrate layer, inorganic cladding material, the polymer layer on the substrate layer top surface is established on the layer in proper order to and set up on the blast layer of substrate layer bottom surface, the blast layer is the prismatic structure of continuous type triangle and distributes. Blast barrier film layer simple structure, the blast is effectual, it can need not the blast of prism membrane spotlight in using backlight unit among the backlight unit.
Description
Technical field
This utility model relates to conducting film technical field, particularly relates to a kind of blast Obstruct membrane and has
The quantum dot film of this blast Obstruct membrane, backlight module.
Background technology
Refer to Fig. 1, show a kind of side-light type LED more typically for liquid crystal display behind
Backlight, including light guide plate 1, layer is located on light guide plate 1 successively the first diffusion barrier 2, quantum dot
Film 3, prism film 4 and the second diffusion barrier 5, and it is arranged on the LED light source 6 of light guide plate 1 side.
The light passed through can be done scattering and process by the first diffusion barrier 2 and the second diffusion barrier 5, allows light be distributed more
Uniformly, quantum dot film 3 is used for providing quantum dot, luminescence under the exciting of the light that can send at LED.
The blended white light that can be formed of light that the light that quantum dot sends and LED send, strengthens liquid crystal display
Display effect.Quantum dot film 3 includes quantum dot layer 301 and is arranged on the resistance of quantum dot layer 301 both sides
Membrane layer 302, quantum dot layer 301 is the polymeric layer containing quantum dot, quantum dot need to oxygen and
Water-stop, by Obstruct membrane layer 302 with blocking oxygen and water.Due to quantum dot film 3 light-gathering not
Good, need through prism film 4 optically focused blast after quantum dot film 3 so that side light type LED backlight source
Rotating fields is relatively complicated, and the light enhancing effect of prism film 4 is undesirable.
Utility model content
In view of the above, a kind of blast with preferable light enhancing effect of this utility model research and development intercepts
Film.
A kind of blast Obstruct membrane, has substrate layer, layer is located on substrate layer end face successively inorganic coating,
Polymeric layer, and it is arranged on the brightness enhancement layer of substrate layer bottom surface, brightness enhancement layer is continuous way triangular prism knot
Structure is distributed.
Further, described inorganic layer uses SiNxLayer, SiOyLayer, sieve and silica-sesquioxide layer, silicon titanium
Oxide skin(coating) or the combined type inorganic layer of above several interactive stacking, between x value 1 to 4/3, y
Between value 1.8 to 2.
Further, described inorganic layer gross thickness is between 5-200nm.
Further, described polymeric layer uses the organic coating of doping inorganic particulate.
Further, described inorganic particulate selects silicon oxide, titanium oxide, alumina particle, zirconium oxide
Granule, antimony oxide particle or Zinc oxide particles particle.
Further, described substrate layer end face is formed with the inorganic coating of N shell to form with polymeric layer
Composite bed, N≤5 layer, are more preferably N≤3 layer.
Further, a smooth finish, smooth finish table it are formed with between described substrate layer and inorganic layer
Surface roughness is less than 7nm.
Further, described triangular prism bottom width, between 12-60nm, is preferably
Between 23-55nm, drift angle is between 60-120 degree, between preferably 80-100 degree.
Additionally, this utility model is necessary to provide a kind of quantum dot film with described blast Obstruct membrane.
A kind of quantum dot film, including quantum dot layer and the Obstruct membrane that is arranged on quantum dot layer both sides, amount
Blast Obstruct membrane described in Obstruct membrane at least side, the layer both sides selection of son point.
Further, this utility model is necessary to provide a kind of side-light type LED with described blast Obstruct membrane
Backlight.
A kind of side light type LED backlight source, including light guide plate, the first expansion that layer is located on light guide plate successively
Scattered film, quantum dot film and the second diffusion barrier, and it is arranged on the LED light source of light guide plate side, described
Quantum dot film includes quantum dot layer and is arranged on the Obstruct membrane of quantum dot layer both sides, quantum dot layer both sides
Blast Obstruct membrane described in the selection of Obstruct membrane at least side.
The beneficial effects of the utility model, blast Obstruct membrane passes through in base material one surface configuration brightness enhancement layer,
Brightness enhancement layer uses the distribution of continuous way prism structure, can play spotlight effect, improve brightness.
Accompanying drawing explanation
Described above is only the general introduction of technical solutions of the utility model, in order to be illustrated more clearly that this practicality
Novel technical scheme, will make the accompanying drawing used required in embodiment or description of the prior art below
Introducing simply, the accompanying drawing in description is only corresponding to specific embodiment of the utility model, for
For those of ordinary skill in the art, on the premise of not paying creative work, needs when
Other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of existing side light type LED backlight source；
The structural representation of a kind of side light type LED backlight source that Fig. 2 provides for this utility model；
Fig. 3 is the Rotating fields schematic diagram of the quantum dot film of the side light type LED backlight source shown in Fig. 2；
Fig. 4 provides the Rotating fields schematic diagram of another kind of quantum dot film for this utility model；
Fig. 5 provides the Rotating fields schematic diagram of the third quantum dot film for this utility model；
Fig. 6 is the prism structure sectional view of the brightness enhancement layer of this utility model quantum dot film；
Fig. 7 provides the alternative side-light type LED with described blast Obstruct membrane for this utility model
The structural representation of backlight；
Fig. 8 provides the third the side-light type LED with described blast Obstruct membrane for this utility model
The structural representation of backlight.
Detailed description of the invention
In order to elaborate the technical scheme that this utility model is taked by reaching predetermined technique purpose,
Below in conjunction with the accompanying drawing in this utility model embodiment, to the technical side in this utility model embodiment
Case is clearly and completely described, it is clear that described embodiment is only portion of the present utility model
Divide embodiment rather than whole embodiments, and, on the premise of not paying creative work,
Technological means or technical characteristic in embodiment of the present utility model can be replaced, below with reference to the accompanying drawings
And describe this utility model in detail in conjunction with the embodiments.
Referring to Fig. 2, a kind of side light type LED backlight source, including light guide plate 10, layer is located at and leads successively
The first diffusion barrier 20, quantum dot film 30, prism film 40 and the second diffusion barrier 50 on tabula rasa 10,
And it is arranged on the LED light source 60 of light guide plate 10 side.LED light source 60 emits beam through first
After diffusion barrier 20, even into quantum dot film 30, quantum dot film 30 provides quantum dot, at LED
Luminescence under the exciting of the light sent, and together with light entrance prism film 40, the prism film 40 of LED
Entering the second diffusion barrier 50 after optically focused blast, the light passed through is done scattering and processes by the second diffusion barrier 50,
Make light injection distribution more uniform.
Quantum dot film 30 includes quantum dot layer 31 and is arranged on the Obstruct membrane of quantum dot layer 31 both sides,
Wherein common Obstruct membrane 32 is selected in side, and opposite side makes blast Obstruct membrane 33, quantum dot film 30
The side of common Obstruct membrane 31 adjoin the first diffusion barrier 20, the blast Obstruct membrane of quantum dot film 30
The side of 33 adjoins prism film 40.
Refer to Fig. 3, the first preferred embodiment of blast Obstruct membrane 33, including substrate layer 331, depend on
Secondary be formed on substrate layer 331 1 surface inorganic layer 332, polymeric layer 333, and be formed at
The brightness enhancement layer 334 on another surface of substrate layer 331.Substrate layer 331 material selection PET, PEN, PC,
Any one or several combination of COP or COC, preferably PET base material layer.Substrate layer 331 thickness
Between 12-260um.Inorganic layer 332 uses SiNxLayer, SiOyLayer, sieve and silica-sesquioxide layer, silicon titanium
Oxide skin(coating) or the combined type inorganic layer of above several interactive stacking, between x value 1 to 4/3, y
Between value 1.8 to 2.Inorganic layer gross thickness need to be between 5-200nm, preferably 10-150nm.
Inorganic coating 332 uses SiNxDuring layer, SiNxLayer is by being formed at sputter or evaporation mode
Substrate layer 331 surface, the ratio of N and Si need to control, between x=1 4/3, to can be only achieved Si
Intact bonds state with N.SiNxLayer thickness, between 5nm-40nm, preferably selects
Between 5nm-20nm, between most preferably 10nm-20nm.Inorganic coating 332 uses SiOyDuring layer,
SiOyLayer is produced on base by sputtering method, vacuum vapour deposition, ion plating method or plasma CVD method
Sheet material layers 331 surface, O and Si ratio need to control between y=1.8-2, if y is less than 1.8, can make
Become refractive index higher, affect overall optical design.SiOyBetween layer thickness 20nm-120nm, preferably
Select between 30nm-120nm, most preferably between 30nm-90nm.Inorganic coating 332 is adopted
During with sieve and silica-sesquioxide layer, thickness is between 10nm-90nm；Inorganic coating 332 uses silicon titanyl
During compound layer, thickness is between 10nm-90nm ...
Polymeric layer 333 is organic coating or the organic coating of doping inorganic particulate.Organic coating material
Material is: acrylic resin, 1170-002, polymerization of acrylic modified polyurethane, acrylic acid
Ester modified organic siliconresin or epoxy resin.Inorganic particulate is mainly silicon oxide, Titanium particles.Poly-
Compound layer 333 thickness is between 0.3um-10um, preferably selects between 0.5um-5um.
Brightness enhancement layer 334, in continuous way triangular prism column type structure distribution, refers to Fig. 6, each triangular prism
Post bottom width L is between 12-60um, between preferably 23-55nm, and triangular prism addendum cone
Angle α is between 60-120 degree, between preferably 80-100 degree, by limiting bottom layer width and folder
Angle α, available optimal brightening effect.Brightness enhancement layer 334 refractive index need to be more than 1.5, preferably 1.53
Above.Brightness enhancement layer 334 use material be: acrylic resin, 1170-002, third
The ester modified polyurethane of olefin(e) acid, acrylate modified organic siliconresin or epoxy resin.By arranging blast
Layer 334, brightness enhancement layer 334 uses continuous way prism structure to be distributed, and can play spotlight effect, carry
High brightness.
Referring to Fig. 4, in this utility model, the second preferred embodiment of blast Obstruct membrane 33, compares
In embodiment one, between substrate layer 331 and inorganic layer 332, it is coated with a smooth finish 335 further,
Smooth finish 335 is used for improving pet sheet face tiny defect, makes the most smooth resistance reached more preferably in surface
Every effect, its material is: acrylic resin, 1170-002, acrylate modified poly-
Urethane, acrylate modified organic siliconresin or epoxy resin, surface roughness is below 7nm.
Referring to Fig. 5, in this utility model, the 3rd preferred embodiment of blast Obstruct membrane 33, compares
In embodiment one, further stacking inorganic layer 332 on polymeric layer 333, on inorganic layer 332
It is subsequently formed polymeric layer 333, i.e. inorganic layer 332 and continues alternately laminated in groups with polymeric layer 333.
Can be considered that the inorganic layer 332 being formed on substrate layer 331 is the 1st group of composite bed with polymeric layer 333,
And then stacking the 2nd group ... to N group composite bed；N≤5 layer.Organize composite bed by arranging more, can
Improving barriering effect, but also can reduce production efficiency simultaneously, therefore composite bed is preferred with less than 5 layers,
It is more less than 3 layers.
Described blast Obstruct membrane can make multiple quantum dot membrane structure.Side-light type LED as shown in Figure 7
Quantum dot film in backlight includes quantum dot layer 31 and is arranged on the obstruct of quantum dot layer 31 both sides
Film, the Obstruct membrane of both sides is blast Obstruct membrane 33.Possesses the side-light type LED back of the body of this quantum dot film
Light source, its prism film 40 can omit.
Quantum dot film in side light type LED backlight source as shown in Figure 8, including quantum dot layer 31 with
And it is arranged on the Obstruct membrane of quantum dot layer 31 both sides, wherein common Obstruct membrane 32 is selected in side, another
Side makes blast Obstruct membrane 33, and the side of the common Obstruct membrane 31 of quantum dot film 30 adjoins the second expansion
Dissipating film 50, the side of the blast Obstruct membrane 33 of quantum dot film 30 adjoins the first diffusion barrier 20.
To sum up, this utility model blast Obstruct membrane is by base material one surface configuration brightness enhancement layer, brightness enhancement layer
Use continuous way semicircle spherical distribution, spotlight effect can be played, improve brightness.
The above, be only preferred embodiment of the present utility model, not makees this utility model
Any pro forma restriction, although this utility model is disclosed above with preferred embodiment, but not
In order to limit this utility model, any those skilled in the art, without departing from this utility model
In the range of technical scheme, when the technology contents of available the disclosure above makes a little change or is modified to
With the Equivalent embodiments of change, as long as being without departing from technical solutions of the utility model content, according to this reality
By novel technical spirit, within spirit of the present utility model and principle, above example is made
Any simple amendment, equivalent and improvement etc., all still fall within technical solutions of the utility model
Within protection domain.
Claims (10)
1. a blast Obstruct membrane (33), has substrate layer (331), it is characterised in that: blast hinders
Barrier film (33) includes layer is located on substrate layer (331) end face successively inorganic coating (332), poly-
Compound layer (333), and it is arranged on the brightness enhancement layer (334) of substrate layer (331) bottom surface, brightness enhancement layer
(334) it is distributed in continuous way prism structure.
Blast Obstruct membrane (33) the most according to claim 1, it is characterised in that: described inorganic
Layer (332) use SiNx layer, SiOy layer, sieve and silica-sesquioxide layer, titanium silicon oxide layer or more than
The combined type inorganic layer of several interactive stackings, between x value 1 to 4/3, y value 1.8 to 2 it
Between.
Blast Obstruct membrane (33) the most according to claim 2, it is characterised in that: described inorganic
Layer (332) gross thickness is between 5-200nm.
Blast Obstruct membrane (33) the most according to claim 1, it is characterised in that: described polymerization
Nitride layer (333) uses the organic coating of doping inorganic particulate.
Blast Obstruct membrane (33) the most according to claim 4, it is characterised in that: described inorganic
Particle selects silicon oxide, titanium oxide, alumina particle, zirconia particles, antimony oxide particle or oxidation
Zinc granule particles.
Blast Obstruct membrane (33) the most according to claim 1, it is characterised in that: described base material
It is formed with what the inorganic coating of N shell (332) and polymeric layer (333) formed on layer (331) end face
Composite bed, N≤5 layer, are more preferably N≤3 layer.
7. according to the blast Obstruct membrane (33) described in claim 1 or 6, it is characterised in that: described
A smooth finish (335), smooth finish it is formed with between substrate layer (331) and inorganic layer (332)
Surface roughness is less than 7nm.
Blast Obstruct membrane (33) the most according to claim 1, it is characterised in that: described triangle
Prism bottom width is preferably between 23-55nm between 12-60um, and drift angle is between 60-120
Between degree, between preferably 80-100 degree.
9. a quantum dot film (30), including quantum dot layer (31) and be arranged on quantum dot layer (31)
The Obstruct membrane of both sides, it is characterised in that: power is selected in Obstruct membrane at least side, quantum dot layer (31) both sides
Profit requires the blast Obstruct membrane (33) described in 1 to 8 any one.
10. a side light type LED backlight source, including light guide plate (10), layer is located at light guide plate successively
(10) the first diffusion barrier (20), quantum dot film (30) and the second diffusion barrier (40) on, and
It is arranged on the LED light source (50) of light guide plate (10) side, described quantum dot film (30) amount of including
Son is put layer (31) and is arranged on the Obstruct membrane of quantum dot layer (31) both sides, it is characterised in that: amount
The increasing described in any one of claim 1 to 8 is selected in the Obstruct membrane at least side of son point layer (31) both sides
Bright Obstruct membrane (33).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620047126.9U CN205484876U (en) | 2016-01-16 | 2016-01-16 | Blast barrier film and have this blast barrier film's quantum dot membrane, backlight unit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620047126.9U CN205484876U (en) | 2016-01-16 | 2016-01-16 | Blast barrier film and have this blast barrier film's quantum dot membrane, backlight unit |
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| CN205484876U true CN205484876U (en) | 2016-08-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105572970A (en) * | 2016-01-16 | 2016-05-11 | 汕头万顺包装材料股份有限公司 | Brightening barrier film and quantum dot film and backlight module with same |
| CN107159539A (en) * | 2017-05-27 | 2017-09-15 | 宇龙计算机通信科技(深圳)有限公司 | A kind of ceramic anti-fingerprint coating and preparation method thereof, mobile terminal |
| CN107662385A (en) * | 2017-10-12 | 2018-02-06 | 丹阳市维尼光学有限公司 | Dual baffle film |
-
2016
- 2016-01-16 CN CN201620047126.9U patent/CN205484876U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105572970A (en) * | 2016-01-16 | 2016-05-11 | 汕头万顺包装材料股份有限公司 | Brightening barrier film and quantum dot film and backlight module with same |
| CN107159539A (en) * | 2017-05-27 | 2017-09-15 | 宇龙计算机通信科技(深圳)有限公司 | A kind of ceramic anti-fingerprint coating and preparation method thereof, mobile terminal |
| CN107662385A (en) * | 2017-10-12 | 2018-02-06 | 丹阳市维尼光学有限公司 | Dual baffle film |
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