CN205452295U - Thin -film transistor, array substrate and display device - Google Patents
Thin -film transistor, array substrate and display device Download PDFInfo
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- CN205452295U CN205452295U CN201620106405.8U CN201620106405U CN205452295U CN 205452295 U CN205452295 U CN 205452295U CN 201620106405 U CN201620106405 U CN 201620106405U CN 205452295 U CN205452295 U CN 205452295U
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- 239000010409 thin film Substances 0.000 title claims abstract description 67
- 239000000758 substrate Substances 0.000 title abstract description 6
- 230000002159 abnormal effect Effects 0.000 abstract description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 7
- 230000010363 phase shift Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002932 luster Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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Abstract
The utility model relates to a show technical field, especially relate to a thin -film transistor, array substrate and display device. The utility model provides a thin -film transistor, array substrate and display device, this thin film transistor includes grid, source electrode, drains and is located the source electrode with channel between the drain electrode, the source electrode with the drain electrode all includes straight -line portion and pitch arc part, the straight -line portion of source electrode with the relative setting of straight -line portion of drain electrode just is parallel to each other, the pitch arc of source electrode part with the relative setting of pitch arc part of drain electrode just is parallel to each other. This thin film transistor pixel is charged better, and the low power dissipation can effectively improve the picture abnormal conditions that parasitic capacitance caused.
Description
Technical field
This utility model relates to Display Technique field, particularly relates to a kind of thin film transistor (TFT), array base palte and display device.
Background technology
Display device, has the advantages such as volume is little, lightweight, power consumption is little, bright in luster, image fidelity such as liquid crystal display (LiquidCrystaLDispLay, LCD).Generally, display device includes several parts such as array base palte, colored filter substrate and backlight module.Array base palte includes: glass substrate and a plurality of gate line being formed on glass substrate and a plurality of data lines, a plurality of gate line and a plurality of data lines intersect thus form multiple sub-pixel unit, each sub-pixel unit includes thin film transistor (TFT) and pixel electrode, and thin film transistor (TFT) is used for controlling the state of sub-pixel unit as switching device.Thin film transistor (TFT) includes: grid, source electrode, drain electrode and the raceway groove between source electrode and drain electrode, and wherein, grid connects with corresponding gate line, and source electrode connects with corresponding data wire, and drain electrode is connected with pixel electrode.
Along with the requirement of display quality is gradually stepped up by people, the liquid crystal display of high-resolution, low-power consumption and high penetration become development trend, general high-resolution pixel structure needs the strongest TFT charging ability, and the channel width-over-length ratio (W/L) improving thin film transistor (TFT) can improve the charging performance of TFT.Refer to the structural representation that Fig. 1, Fig. 1 are a kind of thin film transistor (TFT) of the prior art.As it is shown in figure 1, this thin film transistor (TFT) 10 includes source electrode 11, drain electrode 12 and the raceway groove 13 between source electrode 11 and drain electrode 12.In prior art, if increasing TFT width, can sacrifice the aperture opening ratio of pixel, the length reducing TFT also can be susceptible to short-term.
Utility model content
The purpose of this utility model includes providing a kind of thin film transistor (TFT), array base palte and display device, for improving the charging ability of the array base palte applying this thin film transistor (TFT), thus improves the high-resolution of pixel structure, and aperture opening ratio will not be produced impact.
Specifically, embodiment of the present utility model provides a kind of thin film transistor (TFT), including grid, source electrode, drain electrode and the raceway groove between described source electrode and described drain electrode, described source electrode and described drain electrode all include straight line portion and arcuate portion, the straight line portion of described source electrode is oppositely arranged with the straight line portion of described drain electrode and is parallel to each other, and the arcuate portion of described source electrode is oppositely arranged with the arcuate portion of described drain electrode and is parallel to each other.
Preferably, the area of the arcuate portion of described source electrode and a length are equal to the height of arcuate portion of described source electrode, width equal to the area equation of the rectangle of the live width of the arcuate portion of described source electrode, and the area of the arcuate portion of described drain electrode and a length are equal to the area equation of the rectangle of the live width of the arcuate portion of described drain electrode equal to the height of arcuate portion of described drain electrode, width.
Preferably, the live width of the straight line portion of described source electrode is more than or equal to the live width of the arcuate portion of described source electrode, and the live width of the straight line portion of described drain electrode is more than or equal to the live width of the arcuate portion of described drain electrode.
Preferably, the distance between the straight line portion of described source electrode with the straight line portion of described drain electrode is equal with the distance between the arcuate portion of described source electrode with the arcuate portion of described drain electrode.
Preferably, the arcuate portion of described source electrode is " C " type structure or " U " type structure, and the arcuate portion of described drain electrode is " C " type structure or " U " type structure.
Preferably, the live width of the straight line portion of described source electrode is equal to the live width of the straight line portion of described drain electrode, and the live width of the arcuate portion of described source electrode is equal to the live width of the arcuate portion of described drain electrode.
Preferably, the area of the straight line portion of described source electrode is equal to the area of the straight line portion of described drain electrode.
On this basis, this utility model also provides for a kind of array base palte, described array base palte includes a plurality of gate line being parallel to each other and a plurality of data wire being parallel to each other, described a plurality of gate line and described a plurality of data lines intersect thus multiple pixel cells of limiting, each pixel cell includes pixel electrode, each pixel cell also includes above-mentioned thin film transistor (TFT), the grid of described thin film transistor (TFT) connects with corresponding gate line, the source electrode of described thin film transistor (TFT) connects with corresponding data wire, and the drain electrode of described thin film transistor (TFT) is connected with pixel electrode.
On this basis, this utility model also provides for a kind of display device, including above-mentioned array base palte.
The source electrode of thin film transistor (TFT) provided by the utility model and drain electrode include arcuate portion, in the case of waiting height, area constant, the channel width (i.e. the length of arcuate portion) of this thin film transistor (TFT) is more than the channel width of thin film transistor (TFT) in prior art, channel width-over-length ratio W/L of thin film transistor (TFT) the most provided by the utility model becomes big, thus in the case of TFT size is constant, improve pixel charging capability, reduce power consumption simultaneously, do not interfere with the aperture opening ratio of liquid crystal panel.
Described above is only the general introduction of technical solutions of the utility model, in order to better understand technological means of the present utility model, and can be practiced according to the content of description, and in order to above and other objects, features and advantages of the present utility model can be become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, describe in detail as follows.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of thin film transistor (TFT) of the prior art.
The structural representation of a kind of thin film transistor (TFT) that Fig. 2 is provided by this utility model embodiment.
Fig. 3 is the current-voltage curve schematic diagram of the phase-shift mask under different channel widths of the thin film transistor (TFT) shown in the thin film transistor (TFT) of prior art and Fig. 2.
Detailed description of the invention
By further illustrating the technological means and effect that this utility model taked by reaching predetermined utility model purpose, below in conjunction with accompanying drawing and preferred embodiment, a kind of thin film transistor (TFT), array base palte and the display device that the utility model proposes foundation and detailed description of the invention, method, step, structure, feature and effect, after describing in detail such as.
About of the present utility model aforementioned and other technology contents, feature and effect, can clearly present in following cooperation is with reference to the detailed description of graphic preferred embodiment.By the explanation of detailed description of the invention, when the technological means can taked this utility model by reaching predetermined purpose and effect are able to more deeply and concrete understanding, but institute's accompanying drawings is only to provide reference and purposes of discussion, not it is used for this utility model is any limitation as.
Refer to the structural representation of a kind of thin film transistor (TFT) that Fig. 2, Fig. 2 are provided by this utility model one embodiment.As shown in Figure 2, this thin film transistor (TFT) 20 includes grid (not shown), source electrode 21, drain electrode 22 and the raceway groove 23 between this source electrode 21 and this drain electrode 22, this source electrode 21 all includes straight line portion and arcuate portion with this drain electrode 22, the straight line portion 211 of this source electrode 21 is oppositely arranged with the straight line portion 221 of this drain electrode 22 and is parallel to each other, the arcuate portion 212 of this source electrode 21 is oppositely arranged with the arcuate portion 222 of this drain electrode 22 and is parallel to each other, the area of the arcuate portion 212 of this source electrode 21 and a length are equal to the height h of the arcuate portion 212 of this source electrode 21, width is equal to live width S of the arcuate portion 212 of this source electrode 212The area equation of rectangle, the area of the arcuate portion 222 of this drain electrode 22 and a length equal to the height h of arcuate portion 222 of this drain electrode 22, width equal to live width S of the arcuate portion 212 of this drain electrode 223The area equation of rectangle.The area of the straight line portion 211 of this source electrode 21 is equal to the area of the straight line portion 221 of this drain electrode 22.In the present embodiment, the arcuate portion 212 of this source electrode 21 is " C " type structure or " U " type structure, and the arcuate portion 222 of this drain electrode 22 is " C " type structure or " U " type structure, and this raceway groove 23 is rectangle or " U " type structure.
Live width S of the straight line portion 211 of this source electrode 211Live width S more than or equal to the arcuate portion 212 of this source electrode 212, i.e. S1≥S2, live width S of the straight line portion 221 of this drain electrode 223Live width S more than or equal to the arcuate portion 222 of this drain electrode 224, i.e. S3≥S4.Live width S of the straight line portion 211 of this source electrode 211Live width S equal to the straight line portion 221 of this drain electrode 223, i.e. S1=S3, live width S of the arcuate portion 212 of this source electrode 212Live width S equal to the arcuate portion 222 of this drain electrode 224, i.e. S2=S4.Distance D between straight line portion 211 and the straight line portion 221 of this drain electrode 22 of this source electrode 211And distance D between the arcuate portion 212 of this source electrode 21 and the arcuate portion 222 of this drain electrode 222Equal, i.e. D1=D2。
The source electrode 21 of the thin film transistor (TFT) 20 that this utility model embodiment is provided includes arcuate portion with drain electrode 22, in the case of waiting height h, area constant, the width W of this raceway groove 23 i.e. length of this thin film transistor (TFT) 22 arcuate portion is more than the channel width of thin film transistor (TFT) in prior art, then breadth length ratio W/L of this thin film transistor (TFT) 20 raceway groove 23 increases, improve the charging circuit of thin film transistor (TFT) and the charging ability of thin film transistor (TFT), reduce power consumption simultaneously, the picture abnormal conditions that parasitic capacitance causes can be effectively improved.
In the case of fixing source electrode 21 and the area of drain electrode 22 and height h, the thin film transistor (TFT) provided is provided and tests the current-voltage situation under the conditions of different channel widths by phase-shift mask technology in this utility model.Refer to thin film transistor (TFT) and the current-voltage curve schematic diagram of the thin film transistor (TFT) of the present utility model phase-shift mask under different channel widths that Fig. 3, Fig. 3 are prior art.As shown in Figure 3, when channel width W is 10 μm, the embodiment (new architecture) that this utility model provides is compared with prior art (conventional architectures), electric current in the current-voltage curve schematic diagram of the embodiment that this utility model provides is bigger, the i.e. charging current of this thin film transistor (TFT) that the present embodiment provides is bigger, thus improves the charging ability of thin film transistor (TFT)；When channel width W is respectively 10 μm, 15 μm, 20 μm, the current value in this current-voltage curve schematic diagram is incremented by, and i.e. along with the increase of channel width, the current value of the current-voltage of this thin film transistor (TFT) increases, thus improves charging current.In the present embodiment, this thin film transistor (TFT) is tested by phase-shift mask technology, its current value increases along with voltage and increases, simultaneously, increase along with channel width, current value is the highest, i.e. illustrate source electrode and drain area and highly certain in the case of, the thin film transistor (TFT) provided in this utility model is provided and tests the voltage-to-current situation under the conditions of different channel widths by phase-shift mask technology, this source electrode of this thin film transistor (TFT) of the present embodiment offer and the increase of drain electrode camber line W, charging current can be improved, thus improve pixel charging capability.
The source electrode of the thin film transistor (TFT) that this utility model embodiment is provided and drain electrode include arcuate portion, in the case of waiting height h, area constant, this thin film transistor channel width W is more than the channel width of thin film transistor (TFT) in prior art, then breadth length ratio W/L of this thin film transistor channel increases, improve the charging ability of thin film transistor (TFT), reduce power consumption simultaneously；It addition, carried out by phase-shift mask technology testing the current-voltage curve schematic diagram obtained under different channel width, i.e. along with the increase of channel width, current-voltage increases, increase channel width-over-length ratio W/L, improve the charging ability of thin film transistor (TFT), reduce power consumption simultaneously.
This utility model also provides for a kind of array base palte, this array base palte includes a plurality of gate line being parallel to each other and a plurality of data wire being parallel to each other, this a plurality of gate line and this plurality of data lines intersect thus multiple pixel cells of limiting, each pixel cell includes pixel electrode, each pixel cell also includes above-mentioned thin film transistor (TFT), the grid of this thin film transistor (TFT) connects with corresponding gate line, the source electrode of this thin film transistor (TFT) connects with corresponding data wire, and the drain electrode of this thin film transistor (TFT) is connected with pixel electrode.
This utility model also provides for a kind of display device, including above-mentioned array base palte.Specifically, described display device can be display floater, LCD TV, mobile phone, liquid crystal display etc..
The foregoing is only preferred embodiment of the present utility model; not in order to limit this utility model; any those skilled in the art; in the range of without departing from technical solutions of the utility model; when available above-mentioned disclosed technology contents makes a little change or modification etc.; all any amendment, equivalent or improvement etc. made within spirit of the present utility model and principle, within should be included in protection domain of the present utility model.
Claims (9)
1. a thin film transistor (TFT), including grid, source electrode, drain electrode and the raceway groove between described source electrode and described drain electrode, it is characterized in that, described source electrode and described drain electrode all include straight line portion and arcuate portion, the straight line portion of described source electrode is oppositely arranged with the straight line portion of described drain electrode and is parallel to each other, and the arcuate portion of described source electrode is oppositely arranged with the arcuate portion of described drain electrode and is parallel to each other.
2. thin film transistor (TFT) as claimed in claim 1, it is characterized in that, the area of the arcuate portion of described source electrode and a length are equal to the height of arcuate portion of described source electrode, width equal to the area equation of the rectangle of the live width of the arcuate portion of described source electrode, and the area of the arcuate portion of described drain electrode and a length are equal to the area equation of the rectangle of the live width of the arcuate portion of described drain electrode equal to the height of arcuate portion of described drain electrode, width.
3. thin film transistor (TFT) as claimed in claim 1, it is characterised in that the live width of the straight line portion of described source electrode is more than or equal to the live width of the arcuate portion of described source electrode, and the live width of the straight line portion of described drain electrode is more than or equal to the live width of the arcuate portion of described drain electrode.
4. thin film transistor (TFT) as claimed in claim 1, it is characterised in that the distance between the straight line portion of described source electrode with the straight line portion of described drain electrode is equal with the distance between the arcuate portion of described source electrode with the arcuate portion of described drain electrode.
5. thin film transistor (TFT) as claimed in claim 4, it is characterised in that the arcuate portion of described source electrode is " C " type structure or " U " type structure, and the arcuate portion of described drain electrode is " C " type structure or " U " type structure.
6. thin film transistor (TFT) as claimed in claim 3, it is characterised in that the live width of the straight line portion of described source electrode is equal to the live width of the straight line portion of described drain electrode, and the live width of the arcuate portion of described source electrode is equal to the live width of the arcuate portion of described drain electrode.
7. thin film transistor (TFT) as claimed in claim 1, it is characterised in that the area of the straight line portion of described source electrode is equal to the area of the straight line portion of described drain electrode.
8. an array base palte, described array base palte includes a plurality of gate line being parallel to each other and a plurality of data wire being parallel to each other, described a plurality of gate line and described a plurality of data lines intersect thus multiple pixel cells of limiting, each pixel cell includes pixel electrode, it is characterized in that, each pixel cell also includes the thin film transistor (TFT) as described in any one of claim 1-7, the grid of described thin film transistor (TFT) connects with corresponding gate line, the source electrode of described thin film transistor (TFT) connects with corresponding data wire, and the drain electrode of described thin film transistor (TFT) is connected with pixel electrode.
9. a display device, it is characterised in that include the array base palte described in claim 8.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620106405.8U CN205452295U (en) | 2016-02-02 | 2016-02-02 | Thin -film transistor, array substrate and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620106405.8U CN205452295U (en) | 2016-02-02 | 2016-02-02 | Thin -film transistor, array substrate and display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106897692A (en) * | 2017-02-23 | 2017-06-27 | 京东方科技集团股份有限公司 | Fingerprint recognition component and display device |
| WO2019119456A1 (en) * | 2017-12-23 | 2019-06-27 | 深圳市柔宇科技有限公司 | Thin film transistor, array substrate and display screen |
| CN110931514A (en) * | 2019-11-29 | 2020-03-27 | 云谷（固安）科技有限公司 | Array substrate and display panel |
-
2016
- 2016-02-02 CN CN201620106405.8U patent/CN205452295U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106897692A (en) * | 2017-02-23 | 2017-06-27 | 京东方科技集团股份有限公司 | Fingerprint recognition component and display device |
| CN106897692B (en) * | 2017-02-23 | 2020-03-03 | 京东方科技集团股份有限公司 | Fingerprint identification subassembly and display device |
| WO2019119456A1 (en) * | 2017-12-23 | 2019-06-27 | 深圳市柔宇科技有限公司 | Thin film transistor, array substrate and display screen |
| CN110931514A (en) * | 2019-11-29 | 2020-03-27 | 云谷（固安）科技有限公司 | Array substrate and display panel |
| CN110931514B (en) * | 2019-11-29 | 2022-04-08 | 云谷（固安）科技有限公司 | Array substrate and display panel |
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Address after: 215301, 1, Longteng Road, Kunshan, Jiangsu, Suzhou Patentee after: InfoVision Optoelectronics(Kunshan)Co.,Ltd. Address before: 215301, 1, Longteng Road, Kunshan, Jiangsu, Suzhou Patentee before: INFOVISION OPTOELECTRONICS (KUNSHAN) Co.,Ltd. |