CN205426843U - Nitrogen oxide sensor chip - Google Patents
Nitrogen oxide sensor chip Download PDFInfo
- Publication number
- CN205426843U CN205426843U CN201620189356.9U CN201620189356U CN205426843U CN 205426843 U CN205426843 U CN 205426843U CN 201620189356 U CN201620189356 U CN 201620189356U CN 205426843 U CN205426843 U CN 205426843U
- Authority
- CN
- China
- Prior art keywords
- layer
- film strips
- hole
- tunic
- diffusion barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measuring Oxygen Concentration In Cells (AREA)
Abstract
The utility model provides a nitrogen oxide sensor chip, the 6th tunic in -band is equipped with first diffusion barrier layer, be equipped with annular oxygen pump electrode on the 6th tunic area of first diffusion barrier layer top, the one side in the 5th tunic area of below on first diffusion barrier layer is equipped with first through -hole an and becomes first cavity with the 6th tunic area and fourth tunic ribbon, the opposite side is equipped with second through -hole b and becomes the second cavity with the 6th tunic area and fourth tunic ribbon, be provided with second diffusion barrier layer between first through -hole an and the second through -hole b, first cavity top and bottom are equipped with main oxygen pump inner electrode, second cavity top and bottom left side are equipped with the auxiliary pump electrode, second cavity right side bottom is equipped with measuring electrode, it becomes semi -enclosed reference cavity with the 5th tunic area and third tunic ribbon to be equipped with the through -hole on the fourth tunic area, be equipped with the reference electrode that one end stretched into the reference intracavity between fourth tunic area and the third tunic area, it is equipped with another heating electrode lead wire to be equipped with between third tunic area and the second floor pellicular zone between heating electrode second floor pellicular zone and a layer of film area.
Description
Technical field
This utility model belongs to measurement or technical field of measurement and test, is specifically related to the device for testing or analyze oxides of nitrogen gas.
Background technology
Along with the development of automobile industry, the increase of vehicles number, automotive emission has become the main source of air pollution.Automobile exhaust pollution has accounted for the 65%～80% of whole atmospheric pollution, in tail gas, harmful components mainly have: carbon monoxide, unburnt Hydrocarbon, oxynitride and particle matter etc., and the discharge of these exhaust pollutants has had resulted in serious threat to health and the living environment of the mankind.For this present situation, many countries have formulated the strictest motor vehicle exhaust emission regulation to restrict this problem, to control the discharge capacity of automobile exhaust pollution thing, in order to reduce the purpose of exhaust emissions, must monitor tail gas in real time and control it, vehicle exhaust oxygen sensor, nitrogen oxide sensor and ammoniacal sensor etc. become the crucial monitoring element of auto-emission control system.
Traditional NOx sensor is laminated structure, multilamellar zirconia ceramics film strips lamination sintering is used to form, being combined with zone of heating by functional layer, functional layer mainly completes a series of electrochemistry and cartalytic decomposition effect, to realize the measurement to oxynitride gas；Zone of heating mainly heats to NOx sensor, makes up to the temperature needed for functional layer electrochemistry and catalytic reaction.Traditional NOx sensor is internal containing multiple chambers, and manufacturing process is complicated, and chamber easily subsides.Meanwhile, around chamber, the contact area in two zirconia ceramics faces is less, thus the structural strength of the NOx sensor head at chamber place is relatively low.
The internal chamber of traditional NOx sensor and electrode many employings rectangle structure, easily occur stress concentration phenomenon in the course of processing, during NOx sensor works, and the problem such as the most cracking, affect the service life of sensor.Traditional NOx sensor is from top air inlet, and owing to air inlet sectional area is limited, the speed that oxides of nitrogen gas diffuses into reduction chamber from outside is more slow, makes nitrogen oxides decompose the electric current produced less, and sensitivity is the highest.Traditional NOx sensor adds thermode and thermometric electrode on same layer film strips, and heater wire is affected by three wires, and heater wire spacing can not be uniformly distributed, and firing rate is slow, and heat distribution is uneven.
Summary of the invention
Technical problem to be solved in the utility model is to overcome the deficiency of existing NOx sensor, it is provided that a kind of generate heat uniform, certainty of measurement height, the Oxynitride sensor chip of length in service life.
nullSolve above-mentioned technical problem the technical scheme is that ground floor film strips upper surface and be provided with second layer film strips，Second layer film strips upper surface is provided with third layer film strips，Third layer film strips upper surface is provided with the 4th tunic band，4th tunic band upper surface is provided with layer 5 film strips，Layer 5 film strips upper surface is provided with layer 6 film strips，It is machined with air inlet in layer 6 film strips，The first diffusion barrier layer it is provided with in air inlet，It is positioned at layer 6 film strips upper surface above the first diffusion barrier layer and is provided with annular oxygen pump electrode，The annular centrage of oxygen pump electrode overlaps with the centrage of air inlet，The side of the lower section layer 5 film strips being positioned at the first diffusion barrier layer is machined with the first through hole a and forms the first chamber with layer 6 film strips and the 4th tunic band、Opposite side is machined with the second through hole b and forms the second chamber with layer 6 film strips and the 4th tunic band，First through hole a and the second through hole b is connected，The second diffusion barrier layer it is provided with between first through hole a and the second through hole b，The top of the first chamber and bottom are provided with main oxygen inner pump electrode，Top and the bottom of the second chamber are provided with auxiliary pumping electrode near the side of the second diffusion barrier layer，Second cavity bottom opposite side is provided with measurement electrode，It is machined with third through-hole c on 4th tunic band and forms semi-enclosed reference chamber with layer 5 film strips and third layer film strips，It is provided with reference electrode between 4th tunic band and third layer film strips，One end of reference electrode extend into reference intracavity，It is provided with between third layer film strips and second layer film strips and adds thermode and a heating contact conductor，It is provided with another root between second layer film strips with ground floor film strips and adds the heating contact conductor that thermode is connected.
The combination being shaped as semi-circular hole and rectangular opening of the first through hole a of the present utility model, the combination being shaped as semi-circular hole and rectangular opening of the second through hole b, the width of the first through hole a width more than the second through hole b, the centrage of the first through hole a and the centrage of the second through hole b overlap.
Ground floor film strips of the present utility model, second layer film strips, third layer film strips, the 4th tunic band, layer 5 film strips, layer 6 film strips are zirconia ceramics film strips.
First diffusion barrier layer of the present utility model and the second diffusion barrier layer are to have the alumina layer of porosity.
The geometry adding thermode of the present utility model is bow font.
Gas channel due to the first through hole a and the second through hole b formation L-shaped of the air inlet of processing in this utility model layer 6 film strips and processing in the modular belt, the air inflow making gas to be measured increases, and gas to be measured is buffered around the corner, air velocity is mild, improve certainty of measurement, this utility model has certainty of measurement height, length in service life, work efficiency advantages of higher.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the schematic cross-section of the first through hole a and the second through hole b and second diffusion barrier layer 10 in Fig. 1.
Fig. 3 is the structural representation adding thermode 14 in Fig. 1.
Detailed description of the invention
With embodiment, this utility model is further described below in conjunction with the accompanying drawings, but this utility model is not limited to embodiment disclosed below.
Embodiment 1
In Fig. 1,2,3, the Oxynitride sensor chip of the present embodiment by ground floor film strips 1, second layer film strips 2, third layer film strips the 3, the 4th tunic band 4, layer 5 film strips 5, layer 6 film strips 6, main oxygen inner pump electrode 7, first spreads barrier layer 8, oxygen pump electrode 9, second spreads barrier layer 10, auxiliary pumping electrode 11, measure electrode 12, reference electrode 13, add thermode 14, heating contact conductor 15 connects and composes.
nullGround floor film strips 1 upper surface is suppressed with second layer film strips 2，Second layer film strips 2 upper surface is suppressed with third layer film strips 3，Third layer film strips 3 upper surface is suppressed with the 4th tunic band 4，4th tunic band 4 upper surface is suppressed with layer 5 film strips 5，Layer 5 film strips 5 upper surface is suppressed with layer 6 film strips 6，Ground floor film strips 1～layer 6 film strips 6 are zirconia ceramics film strips，It is machined with air inlet in layer 6 film strips 6，The first diffusion barrier layer 8 it is provided with in air inlet，First diffusion barrier layer 8 is the alumina layer with porosity，It is positioned at layer 6 film strips 6 upper surface above the first diffusion barrier layer 8 and is printed with annular oxygen pump electrode 9，The left side of the lower section layer 5 film strips 5 being positioned at the first diffusion barrier layer 8 is machined with the first through hole a，The combination being shaped as semi-circular hole and rectangular opening of the first through hole a，The diameter of semi-circular hole is equal with the width of rectangular opening，First through hole a forms the first chamber with layer 6 film strips 6 and the 4th tunic band 4，The right side of layer 5 film strips 5 is machined with the second through hole b，The combination being shaped as semi-circular hole and rectangular opening of the second through hole b，The diameter of semi-circular hole is equal with the width of rectangular opening，The width of the second through hole b width less than the first through hole a，Second through hole b forms the second chamber with layer 6 film strips 6 and the 4th tunic band 4，First through hole a and the second through hole b is connected and the centrage of the first through hole a and the second through hole b overlaps，Second through hole b and the first through hole a end circular arc structure reduce sensor internal stress and concentrate，Prevent internal cleavage，Improve sensor service life，The second diffusion barrier layer 10 it is provided with between first through hole a and the second through hole b，Second diffusion barrier layer 10 is the alumina layer with porosity，The top of the first chamber and bottom print have main oxygen inner pump electrode 7，The top of the second chamber and bottom left are printed with auxiliary pumping electrode 11，Measurement electrode 12 it is printed with on the right side of second cavity bottom；It is machined with third through-hole c on 4th tunic band 4 and forms semi-enclosed reference chamber with layer 5 film strips 5 and third layer film strips 3, it is printed with reference electrode 13 between 4th tunic band 4 and third layer film strips 3, one end of reference electrode 13 extend in reference chamber, it is printed with between third layer film strips 3 and second layer film strips 2 and adds thermode 14 and a heating contact conductor, the geometry adding thermode 14 is bow font, it is printed with another root between second layer film strips 2 with ground floor film strips 1 and adds the heating contact conductor 15 that thermode 14 is connected, so heating contact conductor is separately positioned on the both sides up and down of second layer modular belt 2 so that heating region area is bigger, heat up faster, heating is uniformly, reduce the Thermal Stress to lamellar NOx sensor sensing element.
Operation principle of the present utility model is as follows:
During measurement, Oxynitride sensor chip is heated electrode 14 and is heated to about 800 DEG C, reaches the temperature that functional layer normally works, so that a series of electrochemistry of functional layer and cartalytic decomposition effect can be smoothed out.Owing to this utility model adds the bow word-lifting formula of thermode 14 so that the firing rate of chip is fast, uniform heat distribution, thus improves the response speed of chip.
Gas to be measured enters the first chamber by diffusion barrier layer 8, by main oxygen pump electrode 9 and main oxygen inner pump electrode 7 are applied certain voltage, is pumped out by major part oxygen in gas to be measured；Make imflammable gas burning in gas to be measured, get rid of the interference of other gases, and the NO in gas to be measured2It is converted into NO, meanwhile, according to the voltage between main oxygen inner pump electrode 7 and reference electrode 13, the oxygen concentration of gas to be measured can be reflected.This utility model perforate in film strips 6 arranges the intake method of diffusion barrier 8, and on the one hand can avoid arranging inlet channel from chip top is easily caused the phenomenon that inlet channel subsides；On the other hand, comparing with existing top intake method, inlet channel cross-sectional area of the present utility model is big, and induction pathway is short, and gas to be measured can be made to enter the first chamber a faster, improves the response speed of chip, and makes the pump electric current of generation relatively greatly, easily differentiates.
In gas to be measured, remaining gas enters the second chamber by diffusion barrier layer 10, auxiliary pumping electrode 11 continues pump oxygen, make the concentration of oxygen in the second chamber reduce further, by the voltage between auxiliary pumping electrode 11 and reference electrode 13, the oxygen concentration of the second chamber can be detected.Until oxygen is substantially all be pumped time, be decomposed into N measuring in electrode NO under the catalytic action of Pt and Rh2And O2, the O that wherein decomposes2Measured pumping is walked, and measures pump oxygen amount correspondence NO of pumpxContent, through demarcation in calibrating gas, just can obtain pump electric current and the NO of measurement pumpxThe corresponding relation of content.Owing to the width of the first chamber is more than being provided with diffusion barrier layer 10 between the width of the second chamber and two chambers, therefore the cross-sectional area that gas is diffused into the second chamber from the first chamber is less, path is longer, intake velocity is relatively slow, this is so that gas to be measured residence time in the first chamber is longer, on the one hand gas to be measured is made to be buffered in the first chamber, it is to avoid the airflow fluctuation impact on measuring electrode during actually used；On the other hand make main oxygen pump pump oxygen abundant, get rid of the interference of unnecessary oxygen as early as possible, so that signal tends towards stability faster.
Claims (5)
- null1. an Oxynitride sensor chip，It is characterized in that: ground floor film strips (1) upper surface is provided with second layer film strips (2)，Second layer film strips (2) upper surface is provided with third layer film strips (3)，Third layer film strips (3) upper surface is provided with the 4th tunic band (4)，4th tunic band (4) upper surface is provided with layer 5 film strips (5)，Layer 5 film strips (5) upper surface is provided with layer 6 film strips (6)，Layer 6 film strips is machined with air inlet on (6)，The first diffusion barrier layer (8) it is provided with in air inlet，It is positioned at the first diffusion barrier layer (8) top layer 6 film strips (6) upper surface and is provided with annular oxygen pump electrode (9)，The centrage of annular oxygen pump electrode (9) overlaps with the centrage of air inlet，The side of lower section layer 5 film strips (5) being positioned at the first diffusion barrier layer (8) is machined with the first through hole (a) and forms the first chamber with layer 6 film strips (6) and the 4th tunic band (4)、Opposite side is machined with the second through hole (b) and forms the second chamber with layer 6 film strips (6) and the 4th tunic band (4)，First through hole (a) is connected with the second through hole (b)，The second diffusion barrier layer (10) it is provided with between first through hole (a) and the second through hole (b)，The top of the first chamber and bottom are provided with main oxygen inner pump electrode (7)，Top and the bottom of the second chamber are provided with auxiliary pumping electrode (11) near the side of the second diffusion barrier layer (10)，Second cavity bottom opposite side is provided with measurement electrode (12)，It is machined with third through-hole (c) on 4th tunic band (4) and forms semi-enclosed reference chamber with layer 5 film strips (5) and third layer film strips (3)，It is provided with reference electrode (13) between 4th tunic band (4) and third layer film strips (3)，One end of reference electrode (13) extend into reference intracavity，It is provided with between third layer film strips (3) and second layer film strips (2) and adds thermode (14) and a heating contact conductor，It is provided with another root and (14) the heating contact conductor (15) that is connected that adds thermode between second layer film strips (2) with ground floor film strips (1).
- Oxynitride sensor chip the most according to claim 1, it is characterized in that: the combination being shaped as semi-circular hole and rectangular opening of the first described through hole (a), the combination being shaped as semi-circular hole and rectangular opening of the second through hole (b), the width of the first through hole (a) overlaps more than the width of the second through hole (b), the centrage of the first through hole (a) and the centrage of the second through hole (b).
- Oxynitride sensor chip the most according to claim 1, it is characterised in that: described ground floor film strips (1), second layer film strips (2), third layer film strips (3), the 4th tunic band (4), layer 5 film strips (5), layer 6 film strips (6) are zirconia ceramics film strips.
- Oxynitride sensor chip the most according to claim 1, it is characterised in that: the first described diffusion barrier layer (8) and the second diffusion barrier layer (10) they are the alumina layer with porosity.
- Oxynitride sensor chip the most according to claim 1, it is characterised in that: the described geometry adding thermode (14) is bow font.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620189356.9U CN205426843U (en) | 2016-03-11 | 2016-03-11 | Nitrogen oxide sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620189356.9U CN205426843U (en) | 2016-03-11 | 2016-03-11 | Nitrogen oxide sensor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205426843U true CN205426843U (en) | 2016-08-03 |
Family
ID=56533578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620189356.9U Active CN205426843U (en) | 2016-03-11 | 2016-03-11 | Nitrogen oxide sensor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205426843U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106908505A (en) * | 2017-03-07 | 2017-06-30 | 东风电子科技股份有限公司 | For the novel chip of NOx sensor |
| CN107064222A (en) * | 2017-05-04 | 2017-08-18 | 歌尔股份有限公司 | Gas sensor and its processing method |
| CN107328837A (en) * | 2017-07-24 | 2017-11-07 | 深圳安培龙科技股份有限公司 | A kind of structure improved nitrogen oxide sensor |
| CN107561142A (en) * | 2017-07-25 | 2018-01-09 | 深圳安培龙科技股份有限公司 | A kind of independent segmented alive nitrogen oxide sensor |
| CN108872482A (en) * | 2018-06-22 | 2018-11-23 | 西安创联电气科技（集团）有限责任公司 | A kind of diaphragm of nitrogen oxide sensor ceramic chip |
| CN109001284A (en) * | 2018-06-15 | 2018-12-14 | 西安创联电气科技（集团）有限责任公司 | A kind of NOx sensor ceramic chip |
| CN109507262A (en) * | 2018-11-21 | 2019-03-22 | 温州百岸汽车零部件有限公司 | A kind of NOx sensor chip pumping current adjustment |
| CN112198206A (en) * | 2020-09-21 | 2021-01-08 | 苏州禾苏传感器科技有限公司 | Electrochemical gas sensor chip |
| CN112683979A (en) * | 2020-11-19 | 2021-04-20 | 苏州禾苏传感器科技有限公司 | Electrochemical ammonia gas sensor chip and use method thereof |
-
2016
- 2016-03-11 CN CN201620189356.9U patent/CN205426843U/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106908505A (en) * | 2017-03-07 | 2017-06-30 | 东风电子科技股份有限公司 | For the novel chip of NOx sensor |
| CN107064222A (en) * | 2017-05-04 | 2017-08-18 | 歌尔股份有限公司 | Gas sensor and its processing method |
| CN107064222B (en) * | 2017-05-04 | 2024-04-19 | 潍坊歌尔微电子有限公司 | Gas sensor and processing method thereof |
| CN107328837A (en) * | 2017-07-24 | 2017-11-07 | 深圳安培龙科技股份有限公司 | A kind of structure improved nitrogen oxide sensor |
| CN107328837B (en) * | 2017-07-24 | 2019-07-19 | 深圳安培龙科技股份有限公司 | A kind of structure improved nitrogen oxide sensor |
| CN107561142A (en) * | 2017-07-25 | 2018-01-09 | 深圳安培龙科技股份有限公司 | A kind of independent segmented alive nitrogen oxide sensor |
| CN109001284A (en) * | 2018-06-15 | 2018-12-14 | 西安创联电气科技（集团）有限责任公司 | A kind of NOx sensor ceramic chip |
| CN108872482A (en) * | 2018-06-22 | 2018-11-23 | 西安创联电气科技（集团）有限责任公司 | A kind of diaphragm of nitrogen oxide sensor ceramic chip |
| CN108872482B (en) * | 2018-06-22 | 2022-03-04 | 西安创联电气科技（集团）有限责任公司 | Diaphragm of nitrogen oxygen sensor ceramic chip |
| CN109507262A (en) * | 2018-11-21 | 2019-03-22 | 温州百岸汽车零部件有限公司 | A kind of NOx sensor chip pumping current adjustment |
| CN112198206A (en) * | 2020-09-21 | 2021-01-08 | 苏州禾苏传感器科技有限公司 | Electrochemical gas sensor chip |
| CN112683979A (en) * | 2020-11-19 | 2021-04-20 | 苏州禾苏传感器科技有限公司 | Electrochemical ammonia gas sensor chip and use method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205426843U (en) | Nitrogen oxide sensor chip | |
| US10545072B2 (en) | Catalyst degradation diagnostic method and catalyst degradation diagnostic system | |
| US10428717B2 (en) | Method for diagnosing degradation in catalyst | |
| CN106246306B (en) | System and method for performing NOx self-diagnostic tests | |
| US10605763B2 (en) | Method of reducing output degradation of gas sensor | |
| CN107884461A (en) | Gas sensor, catalyst converter diagnosed system and catalyst converter diagnosed method | |
| US9551260B2 (en) | Deterioration diagnosis device for oxidation catalyst | |
| US20170276051A1 (en) | Method for diagnosing degradation of catalyst and catalyst degradation diagnosis system | |
| US20170276052A1 (en) | Method for diagnosing degradation of catalyst and catalyst degradation diagnosis system | |
| CN104897763B (en) | A kind of method of NOx content in nitrogen oxide sensor and measurement tail gas | |
| JP6909706B2 (en) | Gas sensor | |
| JP7148471B2 (en) | gas sensor | |
| JPH11507123A (en) | Configuration for exhaust gas analysis | |
| CN207007767U (en) | A kind of new-type nitrogen oxide sensor | |
| US11060439B2 (en) | Catalyst deterioration diagnosis system and catalyst deterioration diagnosis method | |
| EP2287598B1 (en) | Gas sensor | |
| JP6794272B2 (en) | Ammonia sensor calibration method | |
| CN112683979A (en) | Electrochemical ammonia gas sensor chip and use method thereof | |
| JP3835022B2 (en) | Gas sensor element | |
| CN203479739U (en) | Zirconium oxide oxygen sensor for automobile | |
| JP2014190939A (en) | Sensor element processing method and sensor element | |
| JP6580845B2 (en) | Gas sensor element | |
| CN206671126U (en) | A kind of sensing element of Multifunction Sensor | |
| CN204613147U (en) | A kind of nitrogen oxide sensor | |
| US8795491B2 (en) | Method of processing sensor element and sensor element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |