CN205335259U - High performance magnetic resistance device - Google Patents
High performance magnetic resistance device Download PDFInfo
- Publication number
- CN205335259U CN205335259U CN201521137507.8U CN201521137507U CN205335259U CN 205335259 U CN205335259 U CN 205335259U CN 201521137507 U CN201521137507 U CN 201521137507U CN 205335259 U CN205335259 U CN 205335259U
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- electrode
- insb
- thin film
- insb thin
- performance
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 64
- 239000010409 thin film Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- 230000007704 transition Effects 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 238000009738 saturating Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910000859 α-Fe Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 238000001459 lithography Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 241000143437 Aciculosporium take Species 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- -1 binary material AlSb Chemical compound 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
Abstract
(B, ) the utility model discloses a high performance magnetic resistance device, including the first electrode, second electrode and a plurality of connection electrode, if it is individual that (b) (b) inSb (b) (b) film disc is (b) (b) n (b) (b), it is individual that the connection electrode is (b) (b) n+1 (b) (b), the one end of the individual connection electrode of (b) (b) 1 (b) (b) is connected with the first electrode, the other end strides across the insulating film that is located on (b) (b) 1 (b) (b) individual (b) (b) inSb (b) (b) film disc and is connected with center electrode on (b) (b) 1 (b) (b) individual (b) (b) inSb (b) (b) film disc, the one end of the individual connection electrode of (b) (b) x (b) (b) is connected with the annular electrode on (b) (b) x -1 (b) (b) individual (b) (b) inSb (b) (b) film disc, the other end strides across the insulating film that is located on (b) (b) x (b) (b) individual (b) (b) inSb (b) (b) film disc and is connected with center electrode on (b) (b) x (b) (b) individual (b) (b) inSb (b) (b) film disc, the one end of the individual connection electrode of (b) (b) n+1 (b) (b) is connected with the annular electrode on (b) (b) n (b) (b) individual (b) (b) inSb (b) (b) film disc, the other end is connected with the second electrode. A plurality of bryants promise disc cascaded structure replaces the rectangular shape magnetic resistance device of tradition, obtaining the biggest magnetoresistive effect while, possesses great input impedance again. (B, )
Description
Technical field
This utility model relates to a kind of high-performance magnetoresistance device。
Background technology
Strip magnetoresistance device of the prior art, due to Hall effect, positive and negative charge can be assembled in the both sides of magnetoresistance device respectively, therefore multiple short-circuiting bar 9 extended from the lateral opposite side of one can be set on magnetoresistance device to eliminate gathering electric charge, such as accompanying drawing 1, but this kind of method can not be completely eliminated gathering electric charge, locates still to have residual charge, therefore limited efficiency between short-circuiting bar。Physically, Corbino disc has the highest magnetoresistance。But owing to input resistance is only small, and cannot practical application。
Utility model content
For overcoming disadvantages mentioned above, the purpose of this utility model is in that to provide a kind of high-performance magnetoresistance device。
In order to reach object above, the technical solution adopted in the utility model is: a kind of high-performance magnetoresistance device, it includes substrate, the multiple InSb thin film disks arranged successively on substrate, annular electrode on InSb thin film disk, on InSb thin film disk and be positioned at the central electrode inside annular electrode, on annular electrode, also part covers the dielectric film of annular electrode, high-performance magnetoresistance device also includes the first electrode, second electrode and multiple connection electrode, if InSb thin film disk is n, connecting electrode is n+1, n >=2, and set 1 < x≤n, n and x is integer, 1st one end connecting electrode is connected with the first electrode, the other end strides across the dielectric film being positioned on the 1st InSb thin film disk and is connected with the central electrode on the 1st InSb thin film disk, the annular electrode that x-th connects on-1 InSb thin film disk in one end and xth of electrode is connected, the other end strides across the dielectric film being positioned on x-th InSb thin film disk and is connected with the central electrode on x-th InSb thin film disk, (n+1)th one end connecting electrode is connected with the annular electrode on the n-th InSb thin film disk, the other end and the second electrode are connected。
Further, dielectric film covers on each annular electrode, and has the multiple first saturating mouth and the multiple second saturating mouth above each annular electrode so that each annular electrode has part to expose from the first saturating mouth, and central electrode exposes from the second saturating mouth。
Further, annular electrode is arranged along the outer edge of InSb thin film disk。
Further, insulating film material is preferably SiO
2
。
Further, substrate layer that substrate includes setting gradually from the bottom to top, transition zone, insulating barrier, buffer layer material is compound, this compound contains at least one metallic element of the same clan with In including In, described compound at least contains Sb, compound contains only metallic element in the race of In place in addition to sb。
Further, insulating layer material is In
2
O
3
Or SiO
2
。
If in high-performance magnetic resistance device fabrication processes, when being annealed InSb processing further, the annealing temperature fusing point lower than InSb, then buffer layer material is InSb, if in high-performance magnetic resistance device fabrication processes, InSb is annealed the fusing point higher than InSb of annealing temperature when processing, then buffer layer material is other the described compounds except InSb。
Further, substrate layer material is pottery, silicon, ferrite or Muscovitum。
Further, base material is pottery, silicon, ferrite or Muscovitum。
The manufacturing process of above-mentioned a kind of high-performance magnetoresistance device, comprises the following steps:
A. grow InSb thin film at upper surface of substrate, and form multiple InSb thin film disk by semiconductor lithography process, obtain device A；
B. evaporate at the upper surface of device A and form electrode metal rete, and make electrode metal rete form the annular electrode and the central electrode that are positioned at InSb thin film disk upper surface by semiconductor lithography process, obtain device B；
C. evaporate at the upper surface of device B and form insulating film layer, by semiconductor lithography process, each for the correspondence of insulating film layer annular electrode place being carried out photoetching and make each annular electrode have part to expose, thus forming dielectric film, obtaining device C；
D. evaporate at the upper surface of device C and form another electrode metal rete, make another electrode metal rete form the first electrode, the second electrode and multiple connection electrode by semiconductor lithography process。
Owing to have employed technique scheme, this utility model one high-performance magnetoresistance device, by the cascaded structure of multiple Corbino disc, replace traditional strip magnetoresistance device, while obtaining maximum magnetic flux inhibition effect, possess again bigger input impedance。
Accompanying drawing explanation
Accompanying drawing 1 is the structural representation of existing magnetoresistance device in this utility model background technology；
Accompanying drawing 2 is the plan structure schematic diagram of a kind of high-performance magnetoresistance device in this utility model embodiment one；
Accompanying drawing 3 is that in this utility model embodiment two, structural representation is cutd open in the side of a kind of high-performance magnetoresistance device。
Number in the figure is:
1, substrate；11, substrate layer；12, transition zone；13, insulating barrier；
2, InSb thin film disk；21, outer edge；
3, the first electrode；
4, the second electrode；
5, annular electrode；
6, central electrode；
7, dielectric film；
8, electrode is connected；
9, short-circuiting bar。
Detailed description of the invention
Advantage of the present utility model and feature below in conjunction with accompanying drawing, preferred embodiment of the present utility model be described in detail, so that can be easier to be readily appreciated by one skilled in the art。
Embodiment one
It is referred to accompanying drawing 3) with reference to accompanying drawing 2(, a kind of high-performance magnetoresistance device in the present embodiment, it includes being capped under dielectric film in substrate 1(accompanying drawing 2), the multiple InSb thin film disk 2(accompanying drawings 2 arranged successively on substrate 1 are capped under dielectric film), in annular electrode 5(accompanying drawing 2 on InSb thin film disk 2, the portions in phantom that annular electrode is coated under dielectric film represents), on InSb thin film disk 2 and be arranged in the connected electrode 8 of central electrode 6(accompanying drawing inside annular electrode 52 and cover), on annular electrode 5, also part covers the dielectric film 7 of annular electrode 5。
Dielectric film 7 covers on each annular electrode 5, and has the multiple first saturating mouth and the multiple second saturating mouth above each annular electrode 5 so that each annular electrode 5 has part to expose from the corresponding first saturating mouth, and central electrode 6 exposes from the corresponding second saturating mouth。Dielectric film 7 material is preferably SiO
2
。
In a kind of scheme being more highly preferred to, annular electrode 5 does not mark this outer edge along the outer edge 21(accompanying drawing 2 of InSb thin film disk 2, specifically illustrates outer edge 21 in fig. 3) arrange。
High-performance magnetoresistance device also includes the first electrode 3, second electrode 4 and multiple connection electrode 8, if InSb thin film disk 2 is n, connecting electrode 8 is n+1, n >=2, and set 1 < x≤n, n and x is integer, 1st one end connecting electrode 8 is connected with the first electrode 3, the other end strides across the dielectric film 7 being positioned on the 1st InSb thin film disk 2 and is connected with the central electrode 6 on the 1st InSb thin film disk 2, the annular electrode 5 that x-th connects on-1 InSb thin film disk 2 in one end and xth of electrode 8 is connected, the other end strides across the dielectric film 7 being positioned on x-th InSb thin film disk 2 and is connected with the central electrode 6 on x-th InSb thin film disk 2, (n+1)th one end connecting electrode 8 is connected with the annular electrode 5 on the n-th InSb thin film disk 2, the other end and the second electrode 4 are connected。
The first electrode 3 in the present embodiment is positive pole, and the second electrode 4 is negative pole。
Substrate 1 material in the present embodiment is pottery, silicon, ferrite or Muscovitum。
The present embodiment additionally provides the manufacturing process of a kind of above-mentioned high-performance magnetoresistance device, comprises the following steps:
A. take a strip substrate 1, on the base 1 superficial growth InSb thin film, and form multiple InSb thin film disk 2 by semiconductor lithography process, obtain device A；
B. evaporate at the upper surface of device A and form electrode metal rete, and make electrode metal rete form the annular electrode 5 and the central electrode 6 that are positioned at InSb thin film disk 2 upper surface by semiconductor lithography process, obtain device B；
C. evaporate at the upper surface of device B and form insulating film layer, undertaken making described mouth by lithography by each for the correspondence of insulating film layer annular electrode 5 place by semiconductor lithography process, and make each annular electrode 5 have part to expose from this saturating mouth, thus forming dielectric film 7, obtain device C；
D. evaporate at the upper surface of device C and form another electrode metal rete, make another electrode metal rete form the first electrode the 3, second electrode 4 and multiple connection electrode 8 by semiconductor lithography process。
A kind of high-performance magnetoresistance device in the present embodiment, by the cascaded structure of multiple Corbino disc, replaces traditional strip magnetoresistance device, while obtaining maximum magnetic flux inhibition effect, possesses again bigger input impedance。
Embodiment two
With reference to accompanying drawing 3, a kind of high-performance magnetoresistance device in the present embodiment differs only in from embodiment one: InSb thin film disk 2 is different with embodiment one with the quantity being connected electrode 8。
The first electrode 3 in the present embodiment is negative pole, and the second electrode 4 is positive pole。
Substrate layer 11 that substrate 1 in the present embodiment includes setting gradually from the bottom to top, transition zone 12, insulating barrier 13。Substrate layer 11 thickness is 100 μm～1000 μm, and material is pottery, silicon, ferrite or Muscovitum。Insulating barrier 13 thickness is 0.01 μm～10 μm, and material is In
2
O
3
Or SiO
2
。Transition zone 12 material is compound, and this compound contains at least one metallic element of the same clan with In including In, at least contains Sb, contain only the metallic element in the race of In place in compound in addition to sb in described compound。If in high-performance magnetic resistance device fabrication processes, InSb is annealed the fusing point lower than InSb of annealing temperature when processing, then transition zone 12 material is InSb, if in high-performance magnetic resistance device fabrication processes, InSb is annealed the fusing point higher than InSb of annealing temperature when processing, then transition zone 12 material is other compounds except InSb, such as binary material AlSb, GaSb, ternary material InGaSb, InAlSb, quaternary material InGaAlSb etc., will not enumerate here。Transition zone 2 thickness is 0.1 μm～20 μm。
The manufacturing process of high-performance magnetoresistance device and differing only in embodiment one in the present embodiment: the manufacture of strip substrate 1: 1, take substrate layer 1, under vacuum, the monomer of contained metallic element in compound is made to form described compound to substrate layer 1 upper surface respectively through vapour phase epitaxy method, thus forming transition zone 2；2, first make In monomer to transition zone 2 upper surface formation cover layer by vapour phase epitaxy method under vacuum, then pass into oxygen or air makes cover layer be oxidized to In at least partly
2
O
3
And form insulating barrier 3；In another embodiment, this step first makes Si monomer to transition zone 2 upper surface formation cover layer by vapour phase epitaxy method under vacuum, then pass into oxygen or air makes cover layer be oxidized to SiO at least partly
2
And form insulating barrier 3。In a kind of highly preferred embodiment, in step 2, pass into oxygen or air makes cover layer be fully oxidized to In
2
O
3
Or SiO
2
And form insulating barrier 3。Above-mentioned vapour phase epitaxy method is thermal evaporation, Metalorganic Chemical Vapor Deposition or molecular beam epitaxy。
After completing the manufacture of substrate 1, according still further to the step A to D in embodiment one, manufacture the high-performance magnetoresistance device in the present embodiment。
A kind of high-performance magnetoresistance device in the present embodiment, except having advantage described in embodiment one, also has the advantage that 1, by transition zone, shields doping effect, it is ensured that the electrical properties of InSb thin film；2, transition zone is selected and InSb thin film same type of material, and the two thermal expansion coefficient difference is only small, reduces the impact on InSb thin film because thermal coefficient of expansion is different；3, when substrate layer material Ceramics, owing to transition zone is arranged, it is to avoid the ceramic upper hole impact on InSb thin film；4 and transition zone and InSb thin film are conductive layer, increase therebetween insulating barrier and serve the effect of insulation。
Embodiment of above is only for illustrating technology of the present utility model design and feature; its object is to allow person skilled in the art understand content of the present utility model and to be carried out; protection domain of the present utility model can not be limited with this; all equivalences done according to this utility model spirit change or modify, and all should be encompassed in protection domain of the present utility model。
Claims (9)
1. a high-performance magnetoresistance device, it is characterized in that: it includes substrate (1), multiple InSb thin film disk (2) arranged successively on described substrate (1), annular electrode (5) on described InSb thin film disk (2), on described InSb thin film disk (2) and be positioned at described annular electrode (5) inner side central electrode (6), on described annular electrode (5), also part covers the dielectric film (7) of annular electrode (5), described high-performance magnetoresistance device also includes the first electrode (3), second electrode (4) and multiple connection electrode (8), if described InSb thin film disk (2) is n, described connection electrode (8) is n+1, n >=2, and set 1 < x≤n, n and x is integer, 1st one end connecting electrode (8) is connected with described first electrode (3), the other end strides across the dielectric film (7) being positioned on the 1st InSb thin film disk (2) and is connected with the central electrode (6) on the 1st InSb thin film disk (2), the annular electrode (5) that x-th connects on-1 InSb thin film disk (2) in one end and xth of electrode (8) is connected, the other end strides across the dielectric film (7) being positioned on x-th InSb thin film disk (2) and is connected with the central electrode (6) on x-th InSb thin film disk (2), (n+1)th one end connecting electrode (8) is connected with the annular electrode (5) on the n-th InSb thin film disk (2), the other end is connected with described second electrode (4)。
2. a kind of high-performance magnetoresistance device according to claim 1, it is characterized in that: described dielectric film (7) covers on each annular electrode (5), and having the multiple first saturating mouth and the multiple second saturating mouth in each annular electrode (5) top so that each annular electrode (5) has part to expose from the described first saturating mouth, central electrode (6) exposes from the described second saturating mouth。
3. a kind of high-performance magnetoresistance device according to claim 1, it is characterised in that: described annular electrode (5) is arranged along the outer edge (21) of described InSb thin film disk (2)。
4. a kind of high-performance magnetoresistance device according to claim 1, it is characterised in that: described dielectric film (7) material is SiO2。
5. a kind of high-performance magnetoresistance device according to claim 1, it is characterized in that: substrate layer (11) that described substrate (1) includes setting gradually from the bottom to top, transition zone (12), insulating barrier (13), described transition zone (12) material is compound, this compound contains at least one metallic element of the same clan with In including In, described compound at least contains Sb, compound contains only metallic element in the race of In place in addition to sb。
6. a kind of high-performance magnetoresistance device according to claim 5, it is characterised in that: described insulating barrier (13) material is In2O3Or SiO2。
7. a kind of high-performance magnetoresistance device according to claim 5, it is characterized in that: if in described high-performance magnetic resistance device fabrication processes, described InSb is annealed the fusing point lower than InSb of annealing temperature when processing, then described transition zone (12) material is InSb, if in described high-performance magnetic resistance device fabrication processes, described InSb is annealed the fusing point higher than InSb of annealing temperature when processing, then described transition zone (12) material is other the described compounds except InSb。
8. a kind of high-performance magnetoresistance device according to claim 5, it is characterised in that: described substrate layer (11) material is pottery, silicon, ferrite or Muscovitum。
9. a kind of high-performance magnetoresistance device according to claim 1, it is characterised in that: described substrate (1) material is pottery, silicon, ferrite or Muscovitum。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521137507.8U CN205335259U (en) | 2015-12-31 | 2015-12-31 | High performance magnetic resistance device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521137507.8U CN205335259U (en) | 2015-12-31 | 2015-12-31 | High performance magnetic resistance device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205335259U true CN205335259U (en) | 2016-06-22 |
Family
ID=56313951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521137507.8U Withdrawn - After Issue CN205335259U (en) | 2015-12-31 | 2015-12-31 | High performance magnetic resistance device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205335259U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470276A (en) * | 2015-12-31 | 2016-04-06 | 江苏森尼克电子科技有限公司 | High-performance magnetic resistance device and manufacturing process |
-
2015
- 2015-12-31 CN CN201521137507.8U patent/CN205335259U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470276A (en) * | 2015-12-31 | 2016-04-06 | 江苏森尼克电子科技有限公司 | High-performance magnetic resistance device and manufacturing process |
| CN105470276B (en) * | 2015-12-31 | 2019-02-12 | 江苏森尼克电子科技有限公司 | A kind of high-performance magnetoresistance device and manufacturing process |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160622 Effective date of abandoning: 20190212 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20160622 Effective date of abandoning: 20190212 |
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |