CN108735892A - A kind of Hall element and preparation method thereof - Google Patents
A kind of Hall element and preparation method thereof Download PDFInfo
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- CN108735892A CN108735892A CN201810433937.6A CN201810433937A CN108735892A CN 108735892 A CN108735892 A CN 108735892A CN 201810433937 A CN201810433937 A CN 201810433937A CN 108735892 A CN108735892 A CN 108735892A
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
The invention discloses a kind of Hall element and preparation method thereof, wherein Hall element includes Magnetic Substrate, graphene functional layer, electrode and magnetic core, wherein：Graphene functional layer is deposited on the top of Magnetic Substrate；The electrode zone above graphene functional layer is arranged in electrode；The functional area above graphene functional layer is arranged in magnetic core.Grapheme material is directly prepared on Magnetic Substrate, the process simplification of graphene hall element, performance and Yield lmproved are made；Graphene hall element carries out poly- magnetic using two layers of magnetic material, further promotes sensitivity, and because grapheme material thickness itself is very thin, and in entire technical process, one layer of adhesive layer is only used, the spacing of two layers of magnetic material is small, and poly- magnetic effect doubles above.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of Hall element and preparation method thereof.
Background technology
Highly sensitive Hall element on the market at present generally uses InSb materials, because it has very high mobility (most
High reachable 78000cm2/Vs).Magnetic material is installed additional as poly- magnetic device in the both sides up and down of Hall element film, is further carried
Rise the sensitivity of Hall element.In view of the influence of lattice mismatch, in the manufacture work of current highly sensitive InSb Hall elements
In skill, InSb films can only be prepared in by the way of evaporation on mica sheet, then again by InSb films, be turned from mica sheet
It moves on Magnetic Substrate.
In entire manufacturing process, the InSb film compactness being prepared by evaporation mode is poor, and hole, crackle etc. lack
Sunken more, quality is less high.And in transfer process, InSb films are very easy to be damaged, and to reduce yield, influence device
Sensitivity.In addition, InSb film general thickness is 1 μm, in addition it is transferred to required adhesive layer thickness on Magnetic Substrate, with
And second block of magnetic material adheres to adhesive layer thickness used with Hall element, has between 10-20 μm between two blocks of magnetic materials
Every this can be such that the magnet accumulating cap of two blocks of magnetic materials weakens.In addition, since the temperature stability of InSb Hall elements is excessively poor,
Its sensitivity is affected by temperature highly significant.
Graphene has the advantage for preparing Hall element as a kind of novel two-dimensional material：First, grapheme material has
There is high mobility, reaches as high as 200000cm2/ Vs is 3 times of InSb materials；Secondly, graphene is as monoatomic layer material
Material has most thin thickness, and theoretic throat is only 0.335nm, to have very high hall sensitivity；Third, graphene
Material has very superior temperature stability.Also there is the example that grapheme material is applied to Hall element in the prior art.
But to equally exist preparation method more difficult for grapheme material, simultaneously as grapheme material is monoatomic layer structure, in graphite
In the manufacturing process such as alkene film transfer, it is very easy to be damaged, to make the quality of material and Hall element be unable to get guarantee
Problem.
Invention content
In view of this, an embodiment of the present invention provides a kind of Hall element and preparation method thereof, to solve the prior art
Hall element film transfer etc. is in manufacturing process, film be easy it is impaired, the problem of to influence Hall element quality.
According in a first aspect, an embodiment of the present invention provides a kind of Hall element, including Magnetic Substrate, graphite olefinic functionality
Layer, electrode and magnetic core, wherein：Graphene functional layer is deposited on the top of Magnetic Substrate；Electrode is arranged in graphene functional layer
The electrode zone of side；The functional area above graphene functional layer is arranged in magnetic core.
Optionally, further include the insulating layer being arranged between Magnetic Substrate and graphene functional layer.
Optionally, the material of Magnetic Substrate is MnZn alloys or NiZn alloys.
According to second aspect, an embodiment of the present invention provides a kind of Hall element preparation methods, including：Choose magnetic base
Plate；Graphene layer is formed above Magnetic Substrate；Graphene layer is patterned, table top figure is formed；In table top figure
Electrode is formed on electrode zone；Magnetic core is installed on the functional area of table top figure.
Optionally, the material of Magnetic Substrate is MnZn alloys or NiZn alloys.
Optionally, further include the steps that the setting insulating layer between Magnetic Substrate and graphene layer.
Optionally, graphene layer is prepared by chemical vapour deposition technique.
Optionally, include the step of magnetic core is installed on the functional area of table top figure：It is applied in the functional areas of table top figure
Apply adhesive layer；Magnetic core is fixed on adhesive layer.
Optionally, graphene layer is patterned, formed table top figure the step of include：Light is formed on graphene layer
Photoresist layer, and photoresist layer is patterned, obtain photoengraving pattern；Using photoengraving pattern as mask, gone with dry etch process
Except extra grapheme material；Remove photoengraving pattern.
Technical solution of the embodiment of the present invention, has the following advantages：
1. a kind of Hall element provided in an embodiment of the present invention and preparation method thereof, wherein Hall element includes：Magnetic base
Plate, graphene functional layer, electrode and magnetic core, wherein graphene functional layer is deposited on the top of Magnetic Substrate；Electrode is arranged in stone
Electrode zone above black olefinic functionality layer；The functional area above graphene functional layer is arranged in magnetic core.Grapheme material is straight
Preparation is connect on Magnetic Substrate, makes the process simplification of graphene hall element, performance and Yield lmproved；Graphene hall element
Poly- magnetic is carried out using two layers of magnetic material, further promotes sensitivity, and because grapheme material thickness itself is very thin, and it is whole
In a technical process, one layer of adhesive layer is only used, the spacing of two layers of magnetic material is small compared to InSb Hall elements, poly- magnetic effect
It doubles above.
2. a kind of Hall element provided in an embodiment of the present invention and preparation method thereof, wherein Hall element further includes：Setting
Insulating layer between Magnetic Substrate and graphene functional layer.When the conductive matter of Magnetic Substrate, need in graphene work(
Insulating layer is set among ergosphere and Magnetic Substrate, makes graphene functional layer that electrical connection be not present with magnetic conductive substrate, is protected
Demonstrate,prove the working performance of Hall element functional layer.
3. a kind of Hall element provided in an embodiment of the present invention and preparation method thereof, wherein Hall element further includes：It is magnetic
The material of substrate is MnZn alloys or NiZn alloys.Using MnZn alloys or NiZn alloys as Magnetic Substrate, one side MnZn
Alloy or NiZn alloys may be used as the substrate of Hall element, and on the other hand they can also be used as the growing substrate of graphene,
The transfer operation in graphene technical process can be saved, the quality of grapheme material is not damaged.
Description of the drawings
The features and advantages of the present invention can be more clearly understood by reference to attached drawing, attached drawing is schematically without that should manage
Solution is carries out any restrictions to the present invention, in the accompanying drawings：
Fig. 1 is a kind of structure front view of Hall element in the embodiment of the present invention；
Fig. 2 is a kind of structure top view of Hall element in the embodiment of the present invention；
Fig. 3 is the structure front view of another Hall element in the embodiment of the present invention；
Fig. 4 is a kind of flow chart of Hall element preparation method in the embodiment of the present invention；
Reference numeral is expressed as in figure：1- Magnetic Substrates, 2- graphene functional layers, 3- electrodes, 4- magnetic cores, 5- insulating layers.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those skilled in the art are not having
There is the every other embodiment obtained under the premise of making creative work, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a kind of Hall elements, as depicted in figs. 1 and 2, including Magnetic Substrate 1, graphene work(
Ergosphere 2, electrode 3 and magnetic core 4, wherein：
Graphene functional layer 2 is deposited on the top of Magnetic Substrate 1；The electrode above graphene functional layer 2 is arranged in electrode
Region；The functional area above graphene functional layer 2 is arranged in magnetic core 4.
In the present embodiment, graphene is grown directly upon 1 top of Magnetic Substrate, forms the functional layer of Hall element；Magnetic core
The functional area above graphene functional layer 2 is set by adhesive layer, magnetic core 4 forms poly- magnetic device with Magnetic Substrate 1；Electricity
The electrode zone above graphene functional layer 2 is arranged in pole 3.Since graphene functional layer 2 is grown directly upon on Magnetic Substrate 1
, there is no adhesive layer to increase thickness between graphene functional layer 2 and Magnetic Substrate 1.In addition, the material of graphene functional layer 2
Thickness is less than 1nm, is in close contact with Magnetic Substrate 1, between Magnetic Substrate 1 and opposite magnetic material, only one layer of adhesive
The thickness of layer, compared to the double-deck adhesive layer in existing InSb Hall elements, the spacing of magnetic material reduces more than half, gathers
One times of magnetic capability improving or more.Meanwhile graphene hall element also has very superior temperature stability characteristic (quality), is suitble to harsh
In the environment of use.To sum up, used highly sensitive InSb Hall elements on the market at present, sensitivity is 1250V/ (A
T), the graphene hall element sensitivity of the present embodiment is 12000V/ (AT), and the InSb of significantly larger than current industry is suddenly
That element sensitivity.
Grapheme material is directly prepared on Magnetic Substrate, makes the process simplification of graphene hall element, performance and
Yield lmproved；Graphene hall element carries out poly- magnetic using two layers of magnetic material, further promotes sensitivity, and because of graphene
Material thickness itself is very thin, and in entire technical process, one layer of adhesive layer is only used, poly- magnetic effect doubles above.
As optional embodiment, as shown in figure 3, further including being arranged between Magnetic Substrate 1 and graphene functional layer 2
Insulating layer 5.
The principle of Hall effect is：When electric current passes through conductor perpendicular to external magnetic field, carrier deflects, perpendicular to electricity
The direction in stream and magnetic field will produce an additional electric field, to generate potential difference at the both ends of conductor.Therefore, in the present embodiment,
When 1 conductive matter of Magnetic Substrate, needs that insulating layer 5 is arranged among graphene functional layer 2 and Magnetic Substrate 1, make stone
Electrical connection is not present with conductive Magnetic Substrate 1 in black olefinic functionality layer 2, ensures the working performance of Hall element functional layer.
As optional embodiment, the material of Magnetic Substrate 1 is MnZn alloys or NiZn alloys.
In the present embodiment, since the preparation condition of graphene is more harsh, stone is prepared using chemical vapor deposition (CVD)
When black alkene, the growing substrate of selection includes mainly the metallic film in metal foil or particular substrate.Specifically, using MnZn alloys
When as Magnetic Substrate material, since MnZn alloys are also simultaneously conducting base, by aforementioned embodiments it is found that needing in MnZn
Insulating layer 5 is set between alloy and graphene functional layer 2；And the magnetic matrix that NiZn alloys are insulation, it can directly be closed in NiZn
Golden top forms graphene functional layer 2.Using MnZn alloys or NiZn alloys as Magnetic Substrate, one side MnZn alloys or
NiZn alloys may be used as the substrate of Hall element, and on the other hand they can also be used as the growing substrate of graphene, can save
The transfer operation in graphene technical process, the quality of grapheme material is gone to be not damaged.
The embodiment of the present invention additionally provides a kind of preparation method of Hall element, as shown in figure 4, including：
Step S1 chooses Magnetic Substrate.
In the present embodiment, the material for choosing Magnetic Substrate is MnZn alloys or NiZn alloys.
Step S2, forms graphene layer above Magnetic Substrate.
In the present embodiment, when selecting MnZn alloys as Magnetic Substrate, since MnZn alloys are conductive,
It needs before forming graphene layer, forms a layer insulating above MnZn alloys, then grow graphene on the insulating layer
Layer.Insulating layer can be arranged as required to, such as SiC or other isolation materials.And when using NiZn alloys as Magnetic Substrate,
Since it does not have electric conductivity, graphene layer can be prepared with chemical vapor deposition (CVD) method directly on NiZn alloys.
Step S3, patterns graphene layer, forms table top figure.
In the present embodiment, the spin coating photoresist on graphene layer forms photoresist layer, is exposed to photoresist layer,
Obtain photoengraving pattern；Using photoengraving pattern as mask, extra grapheme material is removed with dry etch process；Remove photoetching figure
Case obtains table top figure.It is controlled, completely mask pattern can be replicated with extraordinary sidewall profile using dry etching
Onto silicon chip surface.
Step S4 forms electrode on the electrode zone of table top figure.
In the present embodiment, electrode is formed on the electrode zone of table top figure using the method for vapor deposition.
Step S5 installs magnetic core on the functional area of table top figure.
In the present embodiment, adhesive layer is applied in the functional areas of table top figure, magnetic core is fixed on adhesive layer.Tool
Body, appropriate adhesive layer is dripped in the functional areas of graphene table top figure, only needs magnetic core being capable of fixed dosage.
Grapheme material is directly prepared on Magnetic Substrate, makes the process simplification of graphene hall element, performance and
Yield lmproved；Graphene hall element carries out poly- magnetic using two layers of magnetic material, further promotes sensitivity, and because of graphene
Material thickness itself is very thin, and in entire technical process, one layer of adhesive layer is only used, the spacing of two layers of magnetic material is compared
InSb Hall elements are small, and poly- magnetic effect doubles above.
Although being described in conjunction with the accompanying the embodiment of the present invention, those skilled in the art can not depart from the present invention
Spirit and scope in the case of various modifications and variations can be made, such modifications and variations are each fallen within by appended claims institute
Within the scope of restriction.
Claims (9)
1. a kind of Hall element, which is characterized in that including：
Magnetic Substrate (1)；
Graphene functional layer (2), is deposited on the top of the Magnetic Substrate (1)；
Electrode (3), the electrode zone being arranged above the graphene functional layer (2)；
Magnetic core (4), the functional area being arranged above the graphene functional layer (2).
2. Hall element according to claim 1, which is characterized in that further include being arranged in the Magnetic Substrate (1) and institute
State the insulating layer (5) between graphene functional layer (2).
3. the material of Hall element according to claim 1, the Magnetic Substrate (1) is：MnZn alloys or NiZn alloys.
4. a kind of Hall element preparation method, which is characterized in that including：
Choose Magnetic Substrate；
Graphene layer is formed above the Magnetic Substrate；
The graphene layer is patterned, table top figure is formed；
Electrode is formed on the electrode zone of the table top figure；
Magnetic core is installed on the functional area of the table top figure.
5. preparation method according to claim 4, which is characterized in that the material of the Magnetic Substrate is：MnZn alloys or
NiZn alloys.
6. preparation method according to claim 4, which is characterized in that further include in the Magnetic Substrate and the graphene
The step of insulating layer is set between layer.
7. preparation method according to claim 4, which is characterized in that the graphene layer passes through chemical vapour deposition technique system
It is standby.
8. preparation method according to claim 4, which is characterized in that described to pacify on the functional area of the table top figure
Fill magnetic core the step of include：
Adhesive layer is applied in the functional areas of the table top figure；
The magnetic core is fixed on the adhesive layer.
9. preparation method according to claim 4, which is characterized in that described to be patterned to the graphene layer, shape
Include at the step of table top figure：
Photoresist layer is formed on the graphene layer, and the photoresist layer is patterned, and obtains photoengraving pattern；
Using the photoengraving pattern as mask, extra grapheme material is removed with dry etch process；
Remove the photoengraving pattern.
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| CN201810433937.6A CN108735892A (en) | 2018-05-08 | 2018-05-08 | A kind of Hall element and preparation method thereof |
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| CN201810433937.6A CN108735892A (en) | 2018-05-08 | 2018-05-08 | A kind of Hall element and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403597A (en) * | 2020-02-27 | 2020-07-10 | 中国计量科学研究院 | Graphene quantum Hall device and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185099A (en) * | 2011-04-26 | 2011-09-14 | 北京大学 | Hall element and manufacturing method thereof |
| CN105591026A (en) * | 2015-12-17 | 2016-05-18 | 苏州矩阵光电有限公司 | Method for preparing high-sensitivity Hall element |
| CN206194791U (en) * | 2016-08-23 | 2017-05-24 | 苏州矩阵光电有限公司 | Hall element |
| CN208284503U (en) * | 2018-05-08 | 2018-12-25 | 苏州矩阵光电有限公司 | A kind of Hall element |
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- 2018-05-08 CN CN201810433937.6A patent/CN108735892A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185099A (en) * | 2011-04-26 | 2011-09-14 | 北京大学 | Hall element and manufacturing method thereof |
| CN105591026A (en) * | 2015-12-17 | 2016-05-18 | 苏州矩阵光电有限公司 | Method for preparing high-sensitivity Hall element |
| CN206194791U (en) * | 2016-08-23 | 2017-05-24 | 苏州矩阵光电有限公司 | Hall element |
| CN208284503U (en) * | 2018-05-08 | 2018-12-25 | 苏州矩阵光电有限公司 | A kind of Hall element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403597A (en) * | 2020-02-27 | 2020-07-10 | 中国计量科学研究院 | Graphene quantum Hall device and preparation method thereof |
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