CN205309604U

CN205309604U - Flip -chip LED wafer welding set

Info

Publication number: CN205309604U
Application number: CN201620082819.1U
Authority: CN
Inventors: 李超; 张�杰; 易伟
Original assignee: YICHANG JUSTSUN OPTOELECTRONIC TECHNOLOGY Co Ltd
Current assignee: YICHANG JUSTSUN OPTOELECTRONIC TECHNOLOGY Co Ltd
Priority date: 2016-01-28
Filing date: 2016-01-28
Publication date: 2016-06-15
Anticipated expiration: 2026-01-28

Abstract

The utility model provides a flip -chip LED wafer welding set, includes last pad, heating platform on base plate, the flip -chip LED wafer, and the base plate is fixed on the heating platform, and it is central that the lower pad of base plate is arranged in to the metal salient point of welding material, upward the pad aligns with the lower pad of base plate, and the metal salient point of welding material is located go up the pad with down between the pad. The utility model relates to a flip -chip LED wafer welding set solves the welding shortcomings the such as jail is unreliable, the connection face is imperfect, the temperature expects much in wafer welding process. The by heating, apply mechanical pressure and ultrasonic energy combined action, realize reliably welding.

Description

A kind of flip LED wafer welder

Technical field

This utility model relates to LED encapsulation field, specifically a kind of flip LED wafer welder.

Background technology

At present, mostly LED encapsulation structure is all adopt positive assembling structure on the market, positive assembling structure be substrate pads upwards, and die pads is also upwards, realizes connecting by pad upwards simultaneously by gold thread, thus realizing conduction. It is high to there is gold thread cost in such structure; And rosin joint is easily caused when gold thread is welded; Gold thread is easily caused fracture in other technique follow-up, in actual use weak to heavy current impact, it is easy to cause the defects such as dead lamp. And in LED inverted structure, inverted structure be substrate pads upwards, die pads is downward, and two assembly welding dishes are relative, realizes connecting by the mode directly welded, thus the shortcoming avoiding positive assembling structure. But directly the mode of welding has multiple, can directly connecting with tin cream, it is unreliable to there is connection in this mode, and resistance is high, the shortcomings such as caloric value is big, another is through metal and connects, and by the mode heated, metal is melted, then connects upper and lower pad, but it is too high to there is heating-up temperature in this mode, wayward, and the shortcoming such as joint face is imperfect, and connection reliability is not high.

Summary of the invention

For solving above-mentioned technical problem, this utility model provides a kind of flip LED wafer welder, solves the shortcomings such as the not prison welding in wafer welding procedure is reliable, joint face is imperfect, temperature requirement is high. By heating, applying mechanical pressure and ultrasonic energy combined effect, it is achieved reliably weld.

This utility model be the technical scheme is that

A kind of flip LED wafer welder, including the upper pad on substrate, flip LED wafer, heating platform, substrate is fixed on heating platform, the metal salient point of welding material is placed in the lower pad center of substrate, described upper pad aligns with the lower pad of substrate, and the metal salient point of welding material is on described between pad and described lower pad.

Described flip LED wafer is applied with pressure F vertically downward, and pressure F acts on surface relative with upper pad on flip LED wafer.

Described upper pad and described lower pad side are provided with ultrasonic generator, are used for launching ultrasonic energy.

Described substrate is glass substrate or ceramic substrate.

Described substrate is sapphire substrate or SiC substrate, and substrate comprises lower pad to be welded.

Described metal salient point is gold, copper or tin-lead material.

This utility model one flip LED wafer welder, metal salient point is positioned between upper and lower pad, metal salient point is made to melt by the mode heated, liquid metal is made to be filled between upper and lower pad, then pass through and be downwardly applied to mechanical pressure, the metal making softening is sufficient filling with between upper and lower pad, it is achieved thereby that reliably weld.

If metal salient point is melted by the mode only with heating, so heating-up temperature is by significantly high, and it is chronic, this utility model is in order to solve this difficult problem, adopt ultrasonic energy auxiliary heating, under the combined effect of physical heating, mechanical pressure and ultrasonic energy, make upper and lower pad fully weld, and reduce heating-up temperature and shorten weld interval.

Accompanying drawing explanation

Below in conjunction with drawings and Examples, the utility model is described in further detail:

Fig. 1 is the welding pre-structure sketch of this utility model device;

Fig. 2 be this utility model device welding after structure diagram.

Detailed description of the invention

As shown in Figure 1 and Figure 2, a kind of flip LED wafer welder, including the upper pad 4 on substrate 1, flip LED wafer 5, heating platform 6, substrate 1 is fixed on heating platform 6, the metal salient point 2 of welding material is placed in lower pad 3 center of substrate 1, described upper pad 4 aligns with the lower pad 3 of substrate 1, and the metal salient point 2 of welding material is on described between pad 4 and described lower pad 3.

Described flip LED wafer 5 is applied with pressure F vertically downward, pressure F and acts on surface relative with upper pad 4 on flip LED wafer 5. Mechanical pressure F applies from the top of flip LED wafer 5 till starting from scratch and being gradually increased to 100N.

Described upper pad 4 is provided with ultrasonic generator with described lower pad 3 side, is used for launching ultrasonic energy 7. Ultrasonic energy 7 is used for assisting heating metal salient point 2, applies from the side of flip LED wafer 5.

Described substrate 1 is glass substrate or ceramic substrate.

Or described substrate 1 is sapphire substrate or SiC substrate, and substrate 1 comprises lower pad 3 to be welded.

Described metal salient point 2 is gold, copper or tin-lead material, has the features such as fusing point is low, good conductivity, thermal diffusivity are good.

Described heating platform 6 is preheating temperature 150-200 DEG C, operating temperature 300 DEG C.

Described flip LED wafer 5 is the core luminous component of LED lamp bead, and flip LED wafer 5 comprises the upper pad 4 being welded to substrate 1.

It is embodied as step as follows:

Step 1: be fixed on heating platform 6 by substrate 1, opens heating platform 6, temperature is adjusted to 150-200 DEG C and preheats.

Step 2: the center of the lower pad 3 being positioned over by metal salient point 2 on substrate 1, aligns the upper pad 4 of flip LED wafer 5 with the lower pad 3 on substrate 1.

Step 3: the temperature of heating platform 6 rises to 300 DEG C, applies ultrasonic energy 7 simultaneously in the side of flip LED wafer 5, allows metal salient point 2 produce acoustics softening reaction, under the effect of continuous high temperature and ultrasonic energy, allows metal salient point 2 soften, be performed continuously over 2-3s.

Step 4: the vertical downward direction of flip LED wafer 5 being applied mechanical pressure F, mechanical pressure F from 0N, until 100N, 0 → 100N persistent period 3s, is being continuously applied 2s by 100N mechanical pressure, until completing Fig. 2 welding effect, welding completes.

Claims

1. a flip LED wafer welder, including the upper pad (4) on substrate (1), flip LED wafer (5), heating platform (6), it is characterized in that, substrate (1) is fixed on heating platform (6), the metal salient point (2) of welding material is placed in lower pad (3) center of substrate (1), described upper pad (4) is alignd with the lower pad (3) of substrate (1), and the metal salient point (2) of welding material is positioned between described upper pad (4) and described lower pad (3).

2. a kind of flip LED wafer welder according to claim 1, it is characterised in that described flip LED wafer (5) is applied with pressure F vertically downward, pressure F and acts on the upper surface relative with upper pad (4) of flip LED wafer (5).

3. a kind of flip LED wafer welder according to claim 1, it is characterised in that described upper pad (4) and described lower pad (3) side are provided with ultrasonic generator, are used for launching ultrasonic energy (7).

4. a kind of flip LED wafer welder according to claim 1, it is characterised in that described substrate (1) is glass substrate or ceramic substrate.

5. a kind of flip LED wafer welder according to claim 1, it is characterised in that described substrate (1) is sapphire substrate or SiC substrate, and substrate (1) comprises lower pad (3) to be welded.

6. a kind of flip LED wafer welder according to claim 1, it is characterised in that the core luminous component that described flip LED wafer (5) is LED lamp bead, flip LED wafer (5) comprises the upper pad (4) being welded to substrate (1).

7. a kind of flip LED wafer welder according to claim 1, it is characterised in that described metal salient point (2) be golden, copper or tin-lead material.