CN205280234U - Diamond growth of single crystal cavity temperature measuring device - Google Patents
Diamond growth of single crystal cavity temperature measuring device Download PDFInfo
- Publication number
- CN205280234U CN205280234U CN201620007770.3U CN201620007770U CN205280234U CN 205280234 U CN205280234 U CN 205280234U CN 201620007770 U CN201620007770 U CN 201620007770U CN 205280234 U CN205280234 U CN 205280234U
- Authority
- CN
- China
- Prior art keywords
- temperature
- cavity
- single crystal
- top hammer
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The utility model provides a diamond growth of single crystal cavity temperature measuring device, sets up the tip at the retainer ring including top hammer, retainer ring and temperature sensor, top hammer, and temperature sensor encapsulates in the retainer ring. Temperature sensor passes through pin connection to temperature measurement instrument or module, respectively sets up an above -mentioned temperature measuring device at the four sides all around of diamond growth of single crystal cavity. Temperature in the top hammer perception growth cavity is through this temperature of the intra -annular temperature sensor measurement of centre gripping, according to the dependence of this temperature with 1 interior effective temperature of growth cavity to obtain the temperature in the cavity. The the device measurement process is simple, and is with low costs, through measuring top hammer temperature, according to the dependence of effective temperature in this temperature and the cavity to obtain the temperature in the cavity, direct measurement is not in the interior temperature of cavity under the high temperature high pressure condition.
Description
Technical field
The utility model relates to a kind of for the cavity inner temperature of the artificial rapid growth of diamond single-crystal of temperature gradient method under HPHT (High Temperature High Pressure) condition is carried out the device of Measurement accuracy, belongs to diamond crystal growing technology field.
Background technology
Artificial growth bulky diamond monocrystalline normally takes Growth by Temperature Gradient Technique under HPHT (High Temperature High Pressure) condition, pass through the special ultra-high voltage equipment of artificial growing diamond (domestic generally employing cubic apparatus oil press specifically, external also have the press adopting other form, domestic generally employing cubic apparatus oil press), the agalmatolite cubic block including graphite, metal solvent, conduction heating pipe and thermal insulation element is forced into 5-6GPa, by the conduction of conduction heating pipe, it is heated to the temperature 1400 DEG C-1450 DEG C of diamond film requirement.
The higher temperature of agalmatolite cubic block interior (being also exactly growth chamber) and pressure, cause measuring difficulty. The diamond crystal growth time of small particle size is short, only there is dozens of minutes, the longest tens hours only, crystal is less on the impact of the thermo parameters method in cavity and true pressure after growing, tested by different heating powers or heater voltage, the heating power needed according to test products analysis confirmation or heater voltage, just can meet processing requirement. The bulky diamond single crystal growing time is generally 200-300 hour, even longer. Along with constantly growing up of crystal, because the heat conductivility of crystal differs relatively big with graphite and metal solvent, the thermo parameters method impact in cavity is also just bigger; Meanwhile, after carbon is converted into diamond by graphite, the true pressure of inside cavity is also produced bigger impact by the change of volume.
Under HPHT (High Temperature High Pressure) condition, manually to grow the processing condition of bulky diamond monocrystalline very harsh for temperature gradient method, especially to cavity inner temperature and pressure, require to keep stable with consistent between the vegetative period of bulky diamond monocrystalline, therefore the measurement of temperature in growth chamber is most important, also there is no to meet the desirable measurement means of requirement at present.
Summary of the invention
The deficiency that the utility model exists for existing diamond single crystal growth chamber temperature measurement technology, it is provided that a kind of structure is simple, measure diamond single crystal growth chamber temperature measuring equipment easily.
Diamond single crystal growth chamber temperature measuring equipment of the present utility model, by the following technical solutions:
This temperature measuring equipment, comprises top hammer, holding ring and temperature sensor, and top hammer is arranged on the end of holding ring, and temperature sensor is encapsulated in holding ring.
The junction of described top hammer and holding ring is curved.
It is provided with cooling water channel, for top hammer being cooled in described holding ring. Described temperature sensor is positioned at the top of cooling water channel, prevents water coolant to the interference of measuring tempeature.
It is provided with copper backing, to ensure good heat transfer bottom the encapsulated holes of described temperature sensor.
Temperature sensor is connected to temperature measuring instrument or module by lead-in wire, respectively arranges an above-mentioned temperature measuring equipment at the four sides all around of diamond single crystal growth chamber. Temperature in top hammer perception growth chamber, by this temperature of the temperature sensor measurement in holding ring, according to the dependency of actual temperature in this temperature and growth chamber, thus obtains the temperature in cavity.
The utility model measuring process is simple, cost is low, by measuring top hammer temperature, dependency according to actual temperature in this temperature and cavity, thus obtain the temperature in cavity, directly do not measure the cavity inner temperature being under high temperature (1400 DEG C-1450 DEG C) high pressure (5-6GPa) condition.
Accompanying drawing explanation
Fig. 1 is the structural principle schematic diagram of the utility model diamond single crystal growth chamber temperature measuring equipment.
Fig. 2 is the metering system schematic diagram of the utility model diamond single crystal growth chamber temperature measuring equipment.
In figure: 1, top hammer, 2, holding ring, 3, cooling water channel, 4, water nozzle, 5, temperature sensor, 6, growth chamber, 7, temperature measuring equipment.
Embodiment
Fig. 1 gives the structure of the utility model diamond single crystal growth chamber temperature measuring equipment, comprises top hammer 1, holding ring 2 and temperature sensor 5. Top hammer 1 arranges (clamping) end at holding ring 2, and temperature sensor 5 is arranged on the outside of holding ring 2. Top hammer 2 adopts carbon tungsten alloy to make, and the junction of itself and holding ring 2 is curved. Holding ring 2 is made up of steel, and the end installing holding ring 2 is indent arc. Being provided with cooling water channel 4 in holding ring 2, for top hammer 1 being cooled, cooling water channel 4 import is provided with water nozzle 4. Temperature sensor 5 adopts PT100 hot resistance, is drawn by hot resistance private line and is connected to temperature measuring instrument or module. Temperature sensor 5 is encapsulated in holding ring 2 by screw, and is positioned at the opposite of water nozzle 4, is in the top of cooling water channel 4, prevents water coolant to the interference of measuring tempeature.
For keep temperature survey accurate, temperature sensor 5 encapsulate should be designed to bottom the threaded hole of screw flat, screw screw in before bottom threaded hole, place copper backing, to ensure good heat transfer.
As shown in Figure 2, when measuring the temperature in diamond single crystal growth chamber, an above-mentioned temperature measuring equipment 7 is respectively set at the four sides all around of diamond single crystal growth chamber 1. Temperature in top hammer 1 perception growth chamber, measures this temperature by the temperature sensor 5 in holding ring 2, according to the dependency of actual temperature in this temperature and growth chamber 1, thus obtains the temperature in cavity. Is calculated by test and confirm the dependency of temperature in the temperature of actual measurement and diamond single crystal growth chamber, by heating unit realization to the control of temperature in growth chamber.
Said apparatus belongs to indirect inspection, does not directly measure the cavity inner temperature being under High Temperature High Pressure (1400 DEG C��1450 DEG C, 5-6GPa) condition, but is measured the temperature of top hammer 1 by temperature sensor 5.
Claims (4)
1. a diamond single crystal growth chamber temperature measuring equipment, is characterized in that: comprise top hammer, holding ring and temperature sensor, and top hammer is arranged on the end of holding ring, and temperature sensor is encapsulated in holding ring.
2. diamond single crystal growth chamber temperature measuring equipment according to claim 1, is characterized in that: the junction of described top hammer and holding ring is curved.
3. diamond single crystal growth chamber temperature measuring equipment according to claim 1, is characterized in that: be provided with cooling water channel in described holding ring, and temperature sensor is positioned at the top of cooling water channel.
4. diamond single crystal growth chamber temperature measuring equipment according to claim 1, is characterized in that: be provided with copper backing bottom the encapsulated holes of described temperature sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620007770.3U CN205280234U (en) | 2016-01-06 | 2016-01-06 | Diamond growth of single crystal cavity temperature measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620007770.3U CN205280234U (en) | 2016-01-06 | 2016-01-06 | Diamond growth of single crystal cavity temperature measuring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205280234U true CN205280234U (en) | 2016-06-01 |
Family
ID=56064800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620007770.3U Expired - Fee Related CN205280234U (en) | 2016-01-06 | 2016-01-06 | Diamond growth of single crystal cavity temperature measuring device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205280234U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106422983A (en) * | 2016-11-10 | 2017-02-22 | 郑州磨料磨具磨削研究所有限公司 | Ultrahigh-pressure pressurizing and heating device |
| CN112089562A (en) * | 2020-09-23 | 2020-12-18 | 郑州迪生仪器仪表有限公司 | Temperature calibration and measurement method for infant incubator |
-
2016
- 2016-01-06 CN CN201620007770.3U patent/CN205280234U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106422983A (en) * | 2016-11-10 | 2017-02-22 | 郑州磨料磨具磨削研究所有限公司 | Ultrahigh-pressure pressurizing and heating device |
| CN112089562A (en) * | 2020-09-23 | 2020-12-18 | 郑州迪生仪器仪表有限公司 | Temperature calibration and measurement method for infant incubator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201903526U (en) | Conductivity and Seebeck coefficient test device for semiconductor film materials at low temperatures | |
| CN208334251U (en) | A kind of heat dissipation index measurement device | |
| CN205280234U (en) | Diamond growth of single crystal cavity temperature measuring device | |
| CN106770440B (en) | A kind of Ceramic Balls bed efficient thermal conductivity test platform | |
| CN103234661B (en) | A kind of calibrating installation with independent vacuum chamber | |
| CN104451090A (en) | Continuous temperature-gradient heat treatment method of material | |
| CN102621179A (en) | Device and method for measuring heat conductivity coefficient of barred body material | |
| Li et al. | FEM simulations and experimental studies of the temperature field in a large diamond crystal growth cell | |
| CN101957334A (en) | Low-temperature physical property measuring device of solid material | |
| CN207862479U (en) | A kind of single crystal growing furnace is with automatic crystal pulling liquid mouth away from accurate-location device | |
| CN106198354A (en) | A kind of seepage flow, stress, temperature coupling test machine | |
| CN108896840A (en) | A kind of device and method of original position real-time measurement piezoelectric material high-temperature piezoelectric strain constant | |
| CN102865969B (en) | Pressure sensor temperature characteristic testing device | |
| CN106352998B (en) | A kind of vacuum temperature field measurement device and measurement method | |
| CN201000442Y (en) | Intelligentized rapid survey cold mirror dew point hygrometer | |
| CN110118679A (en) | A kind of temperature is up to 1600 DEG C of magnetic field material processing unit | |
| US2475138A (en) | Device for measuring thermal conductivity | |
| CN210880759U (en) | Bottle base injection mold cooling performance testing arrangement | |
| CN102590274B (en) | System and method used for testing heat conductivity of thin film thermoelectric material | |
| CN101762340B (en) | Method for calibrating temperature uniformity of vacuum equipment | |
| CN210604475U (en) | Heat conductivity coefficient testing device | |
| CN110567612B (en) | Ultra-high temperature calibration device and method for short temperature sensor | |
| CN203758633U (en) | Measuring structure for insulation effect of forging insulation sheath material | |
| CN102286778B (en) | Infrared temperature measurement device of polycrystalline furnace and polycrystalline furnace using same | |
| CN214572356U (en) | CZ single crystal growing furnace static thermal field measuring device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160601 Termination date: 20210106 |