CN205248795U - Overcurrent's power front end anti -reverse connection circuit - Google Patents
Overcurrent's power front end anti -reverse connection circuit Download PDFInfo
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- CN205248795U CN205248795U CN201521104655.XU CN201521104655U CN205248795U CN 205248795 U CN205248795 U CN 205248795U CN 201521104655 U CN201521104655 U CN 201521104655U CN 205248795 U CN205248795 U CN 205248795U
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- zener diode
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- utmost point
- channel mos
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Abstract
The utility model discloses an overcurrent's power front end anti -reverse connection circuit, the D utmost point and positive, the anodal of the 6th diode that N channel MOS managed link to each other, and its S utmost point and power negative pole, the 2nd zener diode positive pole link to each other, the negative pole of the 6th diode and the 39 chip resistor's one end link to each other, the G utmost point of N channel MOS pipe and the 39 chip resistor's the other end, the 2nd zener diode's negative pole, the 3rd zener diode's negative pole link to each other, the 3rd zener diode's positive ground, electrolytic capacitor, 11 chip resistor of fourth connect in parallel respectively at the 3rd zener diode's both ends. The utility model discloses automotive electronics module space that the circuit that can effectively solve current automotive electronics module power unit exists is limited, the structure is limited, and need prevent joining conversely the protection because of leading to the heavy current, and the space that must occupy is great to two problems that have contradiction.
Description
Technical field
The utility model relates to the circuit of automobile electronic module power unit, particularly logical power unit circuit super-high-current and that need do anti-reverse protection.
Background technology
At present; the circuit of existing automobile electronic module power unit all needs to carry out anti-reverse protection; general is all to carry out anti-reverse protection with common diode; but in the time that the chip that needs super-high-current is carried out to anti-reverse protection; because common diode generally can only pass through the electric current of several amperes; and the diode of large electric current generally all needs to add heat abstractor, this becomes infeasible in the situation that automobile electronic module limited space and structure limit. Therefore need a kind ofly in limited space and structure, in conditional situation, can solve the anti-reverse protection problem under large current conditions by its circuit to anti-reverse effect when logical super-high-current.
Utility model content
The purpose of this utility model is to provide a kind of power supply front end reverse-connection preventing circuit of super-high-current; solve existing automobile electronic module power unit circuit exist automobile electronic module limited space, structure limited; and need carry out anti-reverse protection because leading to large electric current; the space that must take is larger, thereby two exist the problem of contradiction.
The utility model solves the technical scheme that its technical problem adopts: a kind of power supply front end reverse-connection preventing circuit of super-high-current, comprise positive source, power cathode, also comprise the 6th diode, the 39 resistance, the 41 resistance, the second Zener diode, the 3rd Zener diode, N-channel MOS pipe, electrochemical capacitor, the D utmost point of N-channel MOS pipe is connected with the positive pole of positive source, the 6th diode, and its S utmost point is connected with power cathode, the second Zener diode positive pole; The negative pole of the 6th diode is connected with one end of the 39 Chip-R; The G utmost point of N-channel MOS pipe and the other end of the 39 Chip-R, the negative pole of the second Zener diode, the negative pole of the 3rd Zener diode are connected; The plus earth of the 3rd Zener diode; Electrochemical capacitor, the 41 Chip-R are connected in parallel on respectively the two ends of the 3rd Zener diode.
Preferably, the model of N-channel MOS pipe is SQM200N04-1m1L.
Preferably, the 39 resistance and the 41 resistance are Chip-R, and electrochemical capacitor is alminium electrolytic condenser.
The beneficial effects of the utility model: wherein N-channel MOS pipe SQM200N04-1m1L has been used for anti-reverse effect, logical super-high-current, the 6th diode D6, the 39 resistance R 39 are for anti-reverse and current limliting, the second Zener diode Z2 is clamped for the voltage of N-channel MOS pipe G, S two interpolars is carried out, and the 3rd Zener diode Z3 is for carrying out clamped to the voltage of N-channel MOS pipe D, G two interpolars. and the 41 resistance R 41 thereafter and electrochemical capacitor C19 are for stablizing the voltage of N-channel MOS pipe G, S two interpolars. This circuit can play anti-reverse effect in the case of the large electric current by 30A. The I of N-channel MOS pipe SQM200N04-1m1LD(A)Can reach 200 amperes, and RDS(on)(Ω)Only have 0.0013 Europe, in the time of the electric current by 30A ampere, all very little of the pressure drop of its generation and the power of consumption, thereby the heat producing is also smaller, does not need to add heat abstractor, also can not produce the situation that burns out metal-oxide-semiconductor. What solved that the circuit of existing automobile electronic module power unit exists is limited and need logical super-high-current and the problem of contradiction of carrying out anti-reverse protection at limited space, structure
Below with reference to drawings and Examples, the utility model is described in detail.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Detailed description of the invention
Embodiment, the power supply front end reverse-connection preventing circuit of a kind of super-high-current as shown in Figure 1, comprise positive source BAT, power cathode BAT_IN, also comprise the 6th diode D6, the 39 resistance R the 39, the 41 resistance R 41, the second Zener diode Z2, the 3rd Zener diode Z3, N-channel MOS pipe Q4, electrochemical capacitor C19, the D utmost point of N-channel MOS pipe Q4 is connected with the positive pole of positive source BAT, the 6th diode D6, and its S utmost point is connected with power cathode BAT_IN, the second Zener diode Z2 are anodal; The negative pole of the 6th diode D6 is connected with one end of the 39 Chip-R R39; The G utmost point of N-channel MOS pipe Q4 and the other end of the 39 Chip-R R39, the negative pole of the second Zener diode Z2, the negative pole of the 3rd Zener diode Z3 are connected; The plus earth of the 3rd Zener diode Z3; Electrochemical capacitor C19, the 41 Chip-R R41 are connected in parallel on respectively the two ends of the 3rd Zener diode Z3.
The model of N-channel MOS pipe Q4 is SQM200N04-1m1L. The 39 resistance R the 39 and the 41 resistance R 41 is Chip-R, the alminium electrolytic condenser that electrochemical capacitor C19 is 3.3uF. The model of the second Zener diode Z2, the 3rd Zener diode Z3 is respectively BZX84-C10, BZX84-C30. Wherein N-channel MOS pipe SQM200N04-1m1L has been used for anti-reverse effect, logical super-high-current, the 6th diode D6, the 39 resistance R 39 are for anti-reverse and current limliting, the second Zener diode Z2 is clamped for the voltage of N-channel MOS pipe G, S two interpolars is carried out, and the 3rd Zener diode Z3 is for carrying out clamped to the voltage of N-channel MOS pipe D, G two interpolars. and the 41 resistance R 41 thereafter and electrochemical capacitor C19 are for stablizing the voltage of N-channel MOS pipe G, S two interpolars. This circuit can play anti-reverse effect in the case of the large electric current by 30A.
In the time of power supply electrifying; electric current is first via the 6th diode D6 by positive source BAT; the 39 resistance R 39 flows through G, the S two ends of the metal-oxide-semiconductor Q4 of N raceway groove again; now G, S two ends produce pressure drop; GS conducting; the in the situation that of GS conducting, electric current is again via D, the S utmost point of the metal-oxide-semiconductor Q4 of N raceway groove, flows to other and need power and the circuit of reverse protection.
Wherein, when G, the S two ends of the metal-oxide-semiconductor Q4 of N raceway groove produce pressure drop while being less than 10V; the second Zener diode Z2 is inoperative; in the time that G, the S both end voltage of the metal-oxide-semiconductor Q4 of N raceway groove exceed 10V and acquire a certain degree; the second Zener diode Z2 reverse-conducting, the G of the metal-oxide-semiconductor Q4 of N raceway groove, S both end voltage is clamped at 10V, the G utmost point is protected; avoid damaging, so that the normal work continuing of holding circuit.
In the time that supply voltage is less than 30V left and right, the 3rd Zener diode Z3 is inoperative, when the electric voltage exception fluctuation of power supply (as throw load time), be elevated to while exceeding 30V, the 3rd Zener diode Z3 is with regard to reverse-conducting, by the voltage clamping at the 3rd Zener diode Z3 two ends at 30V, thereby the D of the metal-oxide-semiconductor Q4 of N raceway groove, G two ends are limited in 30V, avoid producing damage because D, G two ends apply excessive voltage.
When the electric voltage exception fluctuation of power supply, when voltage ratio is larger, current-limiting resistance the 39 resistance R 39 will consume portion of energy, circuit below be played to the effect of current-limiting protection. Avoid the second Zener diode Z2 and the 3rd Zener diode Z3 to burn out because electric current is excessive.
The voltage at the GS two ends of the metal-oxide-semiconductor Q4 of the mu balanced circuit of the 41 resistance R 41 and electrochemical capacitor C19 composition to N raceway groove is stablized, and reduces fluctuation.
When VDD-to-VSS connects inverse time, due to the anti-reverse effect of the 6th diode D6, can not form loop at the 6th diode D6 and the 39 resistance R 39 those branch roads. And because the GS two ends of the metal-oxide-semiconductor Q4 of N raceway groove do not apply again voltage, thereby hold D end can not form loop from S. Thereby play the effect of reverse protection.
Claims (3)
1. a power supply front end reverse-connection preventing circuit for super-high-current, comprises positive source (BAT), power-The utmost point (BAT_IN), is characterized in that: also comprise the 6th diode (D6), the 39 resistance (R39),The 41 resistance (R41), the second Zener diode (Z2), the 3rd Zener diode (Z3), N raceway grooveMetal-oxide-semiconductor (Q4), electrochemical capacitor (C19), the D utmost point of N-channel MOS pipe (Q4) and positive source (BAT),The positive pole of the 6th diode (D6) is connected, its S utmost point and power cathode (BAT_IN), second voltage stabilizing two utmost pointsPipe (Z2) is anodal to be connected; The negative pole of the 6th diode (D6) and the 39 Chip-R (R39)One end is connected; The G utmost point of N-channel MOS pipe (Q4) and the other end of the 39 Chip-R (R39),The negative pole of the second Zener diode (Z2), the negative pole of the 3rd Zener diode (Z3) are connected; The 3rd is steadyPress the plus earth of diode (Z3); Electrochemical capacitor (C19), the 41 Chip-R (R41) pointBe not connected in parallel on the two ends of the 3rd Zener diode (Z3).
2. the power supply front end reverse-connection preventing circuit of super-high-current according to claim 1, is characterized in that:The model of N-channel MOS pipe (Q4) is SQM200N04-1m1L.
3. the power supply front end reverse-connection preventing circuit of super-high-current according to claim 1 and 2, its featureBe: the 39 resistance (R39) and the 41 resistance (R41) are Chip-R, electrochemical capacitor(C19) be alminium electrolytic condenser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521104655.XU CN205248795U (en) | 2015-12-24 | 2015-12-24 | Overcurrent's power front end anti -reverse connection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521104655.XU CN205248795U (en) | 2015-12-24 | 2015-12-24 | Overcurrent's power front end anti -reverse connection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205248795U true CN205248795U (en) | 2016-05-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521104655.XU Active CN205248795U (en) | 2015-12-24 | 2015-12-24 | Overcurrent's power front end anti -reverse connection circuit |
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| CN (1) | CN205248795U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111327303A (en) * | 2018-12-17 | 2020-06-23 | 广州汽车集团股份有限公司 | Negative-pressure-preventing feed-in circuit |
-
2015
- 2015-12-24 CN CN201521104655.XU patent/CN205248795U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111327303A (en) * | 2018-12-17 | 2020-06-23 | 广州汽车集团股份有限公司 | Negative-pressure-preventing feed-in circuit |
| CN111327303B (en) * | 2018-12-17 | 2021-04-20 | 广州汽车集团股份有限公司 | Negative-pressure-preventing feed-in circuit |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |