CN205232158U - Full balanced mixer of high linearity - Google Patents

Full balanced mixer of high linearity Download PDF

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CN205232158U
CN205232158U CN201521065698.1U CN201521065698U CN205232158U CN 205232158 U CN205232158 U CN 205232158U CN 201521065698 U CN201521065698 U CN 201521065698U CN 205232158 U CN205232158 U CN 205232158U
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pmos
source electrode
pmos pipe
grid
transport
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施钟鸣
杨林
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WUXI SICOMM COMMUNICATION TECHNOLOGY Co Ltd
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WUXI SICOMM COMMUNICATION TECHNOLOGY Co Ltd
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Abstract

The utility model discloses a full balanced mixer of high linearity, PMOS pipe PM1's drain electrode and PMOS pipe PM3's drain electrode all are connected with incoming signal VRF+, PMOS pipe PM1's source electrode and PMOS pipe PM4's source connection, PMOS pipe PM3's source electrode and PMOS pipe PM2's source connection, PMOS pipe PM2's drain electrode and PMOS pipe PM4's drain electrode all are connected with incoming signal VRF -, PMOS pipe PM1's grid and PMOS pipe PM2's grid all are connected with local oscillator signal VLO+, PMOS pipe PM3's grid and PMOS pipe PM4's grid all are connected with local oscillator signal VLO -, PMOS pipe PM1's source electrode and PMOS pipe PM5's source connection, PMOS pipe PM5's source electrode is connected with the inverting input end of transport and placing device, PMOS pipe PM5's drain electrode is connected with the forward output of transport and placing device, PMOS pipe PM5's grounded -grid, PMOS pipe PM2's source electrode and PMOS pipe PM6's source connection, PMOS pipe PM6's source electrode is connected with the non inverting input end of transport and placing device, PMOS pipe PM6's drain electrode is connected with the negative sense output of transport and placing device, PMOS pipe PM6's grounded -grid. The realization improves the advantage of the first detector linearity under the low -voltage.

Description

The full balanced mixer of high linearity
Technical field
The utility model relates to electronic circuit field, particularly, relates to the full balanced mixer of a kind of high linearity.
Background technology
Frequency mixer is very important part in radio circuit, and its effect is the change realizing signal carrier, produces the new frequency component being different from frequency input signal.In receiver system, frequency mixer down-converts to intermediate-freuqncy signal radiofrequency signal, so that subsequent conditioning circuit process; In transmitter system, frequency mixer up-converts to radiofrequency signal intermediate-freuqncy signal, after power amplifier amplifies, is gone out by antenna transmission.The quality of frequency mixer performance will directly affect the overall performance of radio-frequency (RF) front-end circuit.
The operation principle of mixer core is that then export these two signal frequency sums or the poor object realizing frequency inverted, its essence is equivalent to a multiplier by two input signals in time domain multiplication, as shown in Figure 1:
Suppose that input A, B are respectively signal Acos (ω 1t), Bcos (ω 2t), then the output signal of frequency mixer is:
A c o s ( ω 1 t ) * B c o s ( ω 2 t ) = A B 2 [ c o s ( ω 1 - ω 2 ) t + c o s ( ω 1 + ω 2 ) t ] - - - ( 1 )
The result that both are multiplied comprises frequency and is added and subtracts each other, the up-conversion namely usually said and down-conversion.For different application (lifting/lowering frequently), useful signal can be taken out, remove another signal with filter simultaneously.
But in fact frequency mixer is nonlinear device, can not accomplish desirable multiplier, output can produce harmonic distortion, and the model of non linear system can Approximate Equivalent be:
y(t)≈α 1x(t)+α 2x 2(t)+α 3x 3(t)(2)
If a sinusoidal signal acts on a non linear system, export and generally will comprise the integer frequency of frequency input signal,
In formula (2), if x (t)=Acos (ω t), so
y ( t ) = α 1 A cos ( ω t ) + α 2 A 2 cos 2 ( ω t ) + α 3 A 3 cos 3 ( ω t ) = α 2 A 2 2 + ( α 1 A + 3 α 3 A 3 4 ) cos ( ω t ) + α 2 A 2 2 cos ( 2 ω t ) + α 3 A 3 4 cos ( 3 ω t ) - - - ( 3 )
If there are two frequencies omega 1, ω 2signal is added to the input of frequency mixer, exports and often comprises the part not belonging to frequency input signal harmonic wave, but the combination of both harmonic waves, this phenomenon is just called intermodulation.Suppose x (t)=A 1cos (ω 1t)+A 2cos (ω 2t), this formula substituted in formula (2), expansion can obtain intermodulation component
ω = ω 1 ± ω 2 : α 2 A 1 A 2 cos ( ω 1 + ω 2 ) t + α 2 A 1 A 2 cos ( ω 1 - ω 2 ) t = 2 ω 1 ± ω 2 : 3 α 3 A 1 2 A 2 4 cos ( 2 ω 1 + ω 2 ) t + 3 α 3 A 1 2 A 2 4 cos ( 2 ω 1 - ω 2 ) t = 2 ω 2 ± ω 1 : 3 α 3 A 2 2 A 1 4 cos ( 2 ω 2 + ω 1 ) t + 3 α 3 A 2 2 A 1 4 cos ( 2 ω 2 - ω 1 ) t - - - ( 4 )
And fundamental frequency component:
ω = ω 1 , ω 2 : ( α 1 A 1 + 3 4 α 3 A 1 3 + 3 2 α 3 A 1 A 2 2 ) cosω 1 t + ( α 1 A 2 + 3 4 α 3 A 2 3 + 3 2 α 3 A 2 A 1 2 ) cosω 2 t - - - ( 5 )
Interested is especially at 2 ω 12with 2 ω 21the third order intermodulation product term (IM3) at place.
Fig. 2 a to Fig. 2 c is the schematic diagram of the third order intermodulation distortion under the test of frequency mixer alliteration, and two frequencies are respectively ω 1and ω 2sinusoidal signal be ω by local frequency lOfrequency mixer time, output signal frequency after frequency spectrum shift and be respectively ω 1lO, ω 2lO, and be 2 ω in signal two side frequency 12lOwith 2 ω 21lOthere is third order intermodulation product term in place.
Intermodulation is a horrible phenomenon in RF system, if weak signal is modulated through third-order non-linear together with two stronger interference signals, so interference signal has an intermodulation product term and drops in signal band, it will destroy useful signal, reduce the performance of circuit, usually characterize the rejection ability of frequency mixer to IM3 with IIP3 or OIP3.The linearity of frequency mixer directly determines the dynamic range of receiver.In addition, along with the shortening of process, the supply voltage of chip is in continuous reduction, and this challenges to the linearity improving frequency mixer.
Existing, the frequency mixer based on Gilbert unit is most popular active double balanced mixer, and its circuit diagram as shown in Figure 3.
Gilbert frequency mixer is by a transconductance input stage (M5, M6) and reversing switch (M1 ~ M4) is formed, transconductance input stage M5, the RF voltage signal of input is converted to current signal by M6, then the switch M1 ~ M4 controlled by local oscillation signal carries out periodicity commutation to current signal, is the equal of current radio frequency signal and local oscillation signal v lOthe product of the unit amplitude square-wave signal controlled, thus realize optical mixing process.Gilbert frequency mixer has plurality of advantages, as provided the very high isolation between LO, RF, IF, provides higher gain etc.But be easy to find out from Fig. 3 circuit, Gilbert frequency mixer is stacked three metal-oxide-semiconductors and limits it and work at lower voltages; In addition, compared with passive frequency mixer, input voltage is converted into electric current by transconductance cell by Gilbert frequency mixer, causes the non-linear of transconductance cell, so can have an impact to frequency mixer overall linearity, its linearity is not as passive frequency mixer.
Utility model content
The purpose of this utility model is, for the problems referred to above, proposes the full balanced mixer of a kind of high linearity, to realize the advantage improving mixer linearity degree at lower voltages.
For achieving the above object, the technical solution adopted in the utility model is:
The full balanced mixer of a kind of high linearity, comprise PMOS PM1, PMOS PM2, PMOS PM3, PMOS PM4, PMOS PM5, PMOS PM6 and transport and placing device, the drain electrode of described PMOS PM1 is all connected with input signal VRF+ with the drain electrode of PMOS PM3, the source electrode of described PMOS PM1 is connected with the source electrode of PMOS PM4, the source electrode of described PMOS PM3 is connected with the source electrode of PMOS PM2, the drain electrode of described PMOS PM2 is all connected with input signal VRF-with the drain electrode of PMOS PM4, the grid of described PMOS PM1 is all connected with local oscillation signal VLO+ with the grid of PMOS PM2, the grid of described PMOS PM3 is all connected with local oscillation signal VLO-with the grid of PMOS PM4, the source electrode of described PMOS PM1 is connected with the source electrode of PMOS PM5, the source electrode of described PMOS PM5 is connected with the inverting input of transport and placing device, the drain electrode of described PMOS PM5 is connected with the forward output of transport and placing device, the grounded-grid of described PMOS PM5, the source electrode of described PMOS PM2 is connected with the source electrode of PMOS PM6, the source electrode of described PMOS PM6 is connected with the in-phase input end of transport and placing device, the drain electrode of described PMOS PM6 is connected with the negative sense output of transport and placing device, the grounded-grid of described PMOS PM6, electric capacity CL is connected between the forward output of described transport and placing device and negative sense output.
Preferably, substrate and the source electrode of described PMOS PM1 link together, substrate and the source electrode of described PMOS PM2 link together, substrate and the source electrode of PMOS PM3 link together, substrate and the source electrode of PMOS PM4 link together, substrate and the source electrode of PMOS PM5 link together, and substrate and the source electrode of PMOS PM6 link together.
Preferably, described PMOS PM5 and PMOS PM6 is normally on.
The technical solution of the utility model has following beneficial effect:
The technical solution of the utility model, PMOS PM1 to PMOS PM4 is operated in degree of depth linear zone, and switch P metal-oxide-semiconductor PM5 and PMOS PM6 is the PMOS of normal conducting, is operated in degree of depth linear zone, is equivalent to resistance, jointly forms a trans-impedance amplifier with transport and placing device.This trans-impedance amplifier can provide certain conversion gain to frequency mixer on the one hand, and the mixing portion also forming to PMOS PM1 to PMOS PM4 on the other hand provides virtual earth (input of amplifier), realizes the mixing of more High Linear.Thus reach the object of low-voltage high linearity.
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Accompanying drawing explanation
Fig. 1 is ideal mixer schematic diagram;
Fig. 2 a to Fig. 2 c is the schematic diagram of the third order intermodulation distortion under the test of frequency mixer alliteration;
Fig. 3 is the electronic circuitry of existing Gilbert frequency mixer;
Fig. 4 is the full balanced mixer principle assumption diagram of the high linearity described in the utility model embodiment;
Fig. 5 is the electronic circuitry of the full balanced mixer of high linearity described in the utility model embodiment;
Fig. 6 is the output signal spectrum figure of Gilbert double balanced mixer;
Fig. 7 is the output signal spectrum figure of the full balanced mixer of high linearity described in the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described, should be appreciated that preferred embodiment described herein is only for instruction and explanation of the utility model, and be not used in restriction the utility model.
As shown in Figure 5, the full balanced mixer of a kind of high linearity, comprise PMOS PM1, PMOS PM2, PMOS PM3, PMOS PM4, PMOS PM5, PMOS PM6 and transport and placing device, the drain electrode of PMOS PM1 is all connected with input signal VRF+ with the drain electrode of PMOS PM3, the source electrode of PMOS PM1 is connected with the source electrode of PMOS PM4, the source electrode of PMOS PM3 is connected with the source electrode of PMOS PM2, the drain electrode of PMOS PM2 is all connected with input signal VRF-with the drain electrode of PMOS PM4, the grid of PMOS PM1 is all connected with local oscillation signal VLO+ with the grid of PMOS PM2, the grid of PMOS PM3 is all connected with local oscillation signal VLO-with the grid of PMOS PM4, the source electrode of PMOS PM1 is connected with the source electrode of PMOS PM5, the source electrode of PMOS PM5 is connected with the inverting input of transport and placing device, the drain electrode of PMOS PM5 is connected with the forward output of transport and placing device, the grounded-grid of PMOS PM5, the source electrode of PMOS PM2 is connected with the source electrode of PMOS PM6, the source electrode of PMOS PM6 is connected with the in-phase input end of transport and placing device, the drain electrode of PMOS PM6 is connected with the negative sense output of transport and placing device, the grounded-grid of PMOS PM6, electric capacity CL is connected between the forward output of transport and placing device and negative sense output.
Preferably, substrate and the source electrode of PMOS PM1 link together, and substrate and the source electrode of PMOS PM2 link together, and substrate and the source electrode of PMOS PM3 link together, and substrate and the source electrode of PMOS PM4 link together.
Preferably, PMOS PM1, PMOS PM2, PMOS PM3 and PMOS PM4, PMOS is all made in separately in a N trap in adopting CMOS technology to make by PMOS PM5, PMOS PM6.
Preferably, PMOS PM5 and PMOS PM6 is normally on.
Preferably, as local oscillation signal v lO+ for low, local oscillation signal v lO-for time high, PMOS PM1 and PMOS PM2 conducting, PMOS PM3 and PMOS PM4 disconnects, input signal v rF+ and input signal v rF-be input to transport and placing device respectively by PMOS PM1 and PMOS PM2, export after transport and placing device amplifier is amplified; As local oscillation signal v lO-for low, local oscillation signal v lO+ for time high, PMOS PM3 and PMOS PM4 conducting, PMOS PM1 and PMOS PM2 disconnects, input signal v rF+ and input signal v rF-be input to transport and placing device respectively by PMOS PM3 and PMOS PM4, export after transport and placing device amplifies.
As shown in Figure 4, switch S 1 ~ S4 is made up of the metal-oxide-semiconductor being operated in degree of depth linear zone, and switch S 5 and switch S 6 are made up of the metal-oxide-semiconductor of normal conducting, are equivalent to resistance, jointly forms a trans-impedance amplifier (TIA) with the transport and placing device in Fig. 4.This trans-impedance amplifier can provide certain conversion gain to frequency mixer on the one hand, and the mixing portion also forming to S1 ~ S4 on the other hand provides virtual earth (input of amplifier), realizes the mixing of more High Linear.Its course of work is as follows: local oscillation signal v lO+, v lO-control the grid of metal-oxide-semiconductor respectively, as shown in phantom in FIG., work as v lO+ for low, v lO-for time high, switch S 1, switch S 2 conducting, switch S 3, switch S 4 disconnects, v rF+, v rF-respectively by switch S 1, switch S 2 is amplified to output through amplifier; Work as v lO-for low, v lO+ for time high, switch S 3, switch S 4 conducting, switch S 1, switch S 2 disconnects, v rF+, v rF-respectively by switch S 3, switch S 4 is amplified to output through amplifier.Can under low pressure work to realize frequency mixer, switch S 1 ~ S4 can not be realized by normally used NMOS tube, but is realized by PMOS.In CMOS technology, PMOS can be made in separately in a N trap, and substrate electric potential can be connected together with its source, and in order to the threshold value coupling that increases between switch S 1 ~ S4 with eliminate substrate bias effect, in this circuit structure, the substrate of PMOS and source are connected together.Final circuit as shown in Figure 5.
In order to the high linearity of this mixer is described, under identical simulated environment, simulate the linearity of the full balanced mixer of Gilbert double balanced mixer and utility model proposition herein respectively.The voltage of emulation is now 1.2V, and the frequency interval of double-tone input signal is 12.5kHz, and amplitude size is 5mV, and the frequency interval of local oscillation signal and input signal is 450kHz, makes FFT to mixer output signal, and its oscillogram respectively as shown in Figure 6 and Figure 7.
Both IDM3 are respectively 74dB and 92dB as can be seen from Figures 6 and 7, i.e. the mixer architecture IDM3 of the technical program proposition is higher than Gilbert frequency mixer 18dB, and this is very large improvement.IDM3=92dB is converted into IIP3=12dBm, and table 1 provides academia and the contrast worked in recent years herein.
Parameters [3] [4] [5] [6] [7] This
Technology CMOS[um] 0.18 0.18 0.13 0.13 0.18 0.13
Voltage conversion gain 8.7 30 14 14.5 30 -4
NF[dB] 11 NA 13.9 24.5 7.3 34
IIP3[dBm] -10 -4 -11 -21 -8 12
Power dissipation[mW] 1.6 2.1 1.85 1.68 1.8 0.6
Architecture SHD Low-IF Low-IF DCR DCR Low-IF
The full balanced mixer of high linearity of table 1, the technical program and academia's frequency mixer performance comparison table.
The document that [3] wherein in table 1 ~ [7] represent is as follows respectively:
[3]F.-C.Chang,P.-C.Huang,S.-F.Chao,andH.Wang,“AlowpowerfoldedmixerforUWBsystemsapplicationsin0.18-mCMOStechnology,”IEEEMicrow.WirelessCompon.Lett.,vol.17,no.5,pp.367–369,May2007.
[4]P.Choi,H.C.Park,S.Kim,S.Park,I.Nam,T.W.Kim,S.Park,S.Shin,M.S.Kim,K.Kang,Y.Ku,H.Choi,S.K.Park,andK.Lee,“Anexperimentalcoin-sizeradioforextremelylow-powerWPAN(IEEE802.15.4)applicationat2.4GHz,”IEEEJ.Solid-StateCircuits,vol.38,no.12,pp.2258–2268,Dec.2003.
[5]J.-B.Seo,J.-H.kim,H.Sun,andT.-Y.Yun,“Alow-powerandhighgainmixerforUWBsystems,”IEEEMicrow.WirelessCompon.Lett.,vol.18,no.12,pp.803–805,Dec.2008.
[6]J.A.M.Jarvinen,J.Kaukovuori,J.Ryynanen,J.Jussila,K.Kivekas,M.Honkanen,andK.A.I.Halonen,“2.4GHzreceiverforsensorapplications,”IEEEJ.Solid-StateCircuits,vol.40,no.7,pp.1426–1433,Jul.2005.
[7]Trung-KienNguyen,VladimirKrizhanovskii,JeongseonLee,andSeok-KyunHan,“AlowpowerRFdirect-conversionreceiver/transmitterfor2.4-GHz-BandIEEE802.15.4Standardin0.18umCMOSTechnology,”IEEETransactionsonmicrowavetheoryandtechniques,vol.54,no.12,Dec2006。
Last it is noted that the foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, although be described in detail the utility model with reference to previous embodiment, for a person skilled in the art, it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.

Claims (3)

1. the full balanced mixer of high linearity, it is characterized in that, comprise PMOS PM1, PMOS PM2, PMOS PM3, PMOS PM4, PMOS PM5, PMOS PM6 and transport and placing device, the drain electrode of described PMOS PM1 is all connected with input signal VRF+ with the drain electrode of PMOS PM3, the source electrode of described PMOS PM1 is connected with the source electrode of PMOS PM4, the source electrode of described PMOS PM3 is connected with the source electrode of PMOS PM2, the drain electrode of described PMOS PM2 is all connected with input signal VRF-with the drain electrode of PMOS PM4, the grid of described PMOS PM1 is all connected with local oscillation signal VLO+ with the grid of PMOS PM2, the grid of described PMOS PM3 is all connected with local oscillation signal VLO-with the grid of PMOS PM4, the source electrode of described PMOS PM1 is connected with the source electrode of PMOS PM5, the source electrode of described PMOS PM5 is connected with the inverting input of transport and placing device, the drain electrode of described PMOS PM5 is connected with the forward output of transport and placing device, the grounded-grid of described PMOS PM5, the source electrode of described PMOS PM2 is connected with the source electrode of PMOS PM6, the source electrode of described PMOS PM6 is connected with the in-phase input end of transport and placing device, the drain electrode of described PMOS PM6 is connected with the negative sense output of transport and placing device, the grounded-grid of described PMOS PM6, electric capacity CL is connected between the forward output of described transport and placing device and negative sense output.
2. the full balanced mixer of high linearity according to claim 1, it is characterized in that, substrate and the source electrode of described PMOS PM1 link together, substrate and the source electrode of described PMOS PM2 link together, substrate and the source electrode of PMOS PM3 link together, substrate and the source electrode of PMOS PM4 link together, and substrate and the source electrode of PMOS PM5 link together, and substrate and the source electrode of PMOS PM6 link together.
3. the full balanced mixer of high linearity according to claim 2, is characterized in that, described PMOS PM5 and PMOS PM6 is normally on.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105471391A (en) * 2015-12-18 2016-04-06 无锡士康通讯技术有限公司 High linearity fully-balanced mixer
CN115208422A (en) * 2022-09-14 2022-10-18 成都益为创科技有限公司 Radio frequency transceiving system adopting double-tone signal frequency mixing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105471391A (en) * 2015-12-18 2016-04-06 无锡士康通讯技术有限公司 High linearity fully-balanced mixer
CN105471391B (en) * 2015-12-18 2018-04-13 无锡士康通讯技术有限公司 The full balanced mixer of high linearity
CN115208422A (en) * 2022-09-14 2022-10-18 成都益为创科技有限公司 Radio frequency transceiving system adopting double-tone signal frequency mixing

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