CN205211601U - Solid electrolytic capacitor packaging structure and manufacturing method thereof - Google Patents
Solid electrolytic capacitor packaging structure and manufacturing method thereof Download PDFInfo
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- CN205211601U CN205211601U CN201520845546.7U CN201520845546U CN205211601U CN 205211601 U CN205211601 U CN 205211601U CN 201520845546 U CN201520845546 U CN 201520845546U CN 205211601 U CN205211601 U CN 205211601U
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- solid electrolytic
- electrolytic capacitor
- packaging body
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Abstract
The utility model discloses a solid electrolytic capacitor packaging structure and manufacturing method thereof, this solid electrolytic capacitor packaging structure include partly packaging body of condenser assembly, an at least electrode pin and this condenser assembly of cladding and this electrode pin, and electrode pin has the portion of burying and the portion of exposing that is located respectively within the packaging body outside and, manufacturing method contains: carry out preceding processing step, form the electrode pin protection film with the exposed portion of cladding, carry out the coating film step to form the how rice film in an infiltration and sealed this solid electrolytic capacitor packaging structure's the micro -structure, and carry out back processing step in order to get rid of the electrode pin protection film. The utility model discloses solid electrolytic capacitor packaging structure's gas tightness and water proofness can be effectively improved, and then long life is increased.
Description
Technical field
The utility model system has about a kind of solid electrolytic capacitor encapsulating structure and manufacture method thereof, espespecially a kind of solid electrolytic capacitor encapsulating structure for electronic product and manufacture method thereof.
Background technology
Capacitor is used in the basic module of consumer electrical home appliances, computer motherboard and periphery thereof, power supply unit, communication product and automobile etc. widely, and its main effect comprises: filtering, bypass, rectification, coupling, decoupling, phase inversion etc.It is one of indispensable assembly in electronic product.Capacitor, according to different materials and purposes, has different kenels.Comprise aluminium matter electrochemical capacitor, tantalum matter electrochemical capacitor, laminated ceramic electric capacity, thin-film capacitor etc.
In known techniques, solid electrolytic capacitor has the advantages such as small size, high capacitance, frequency characteristic be superior, and the decoupling zero cooperation that can be used in the power circuit of central processing unit is used.As shown in Figure 1, generally speaking, known stack-type solid electrolytic capacitor 100 comprises multiple capacitor cell 10, and wherein each capacitor cell 10 comprises positive pole portion P and negative pole portion N.The negative pole portion N storehouse each other of capacitor cell 10, and conducting resin material 11 is set by between adjacent capacitor cell 10, form condenser assembly 1 to make to be electrically connected to each other between multiple capacitor cell 10.In Fig. 1, capacitor cell 10 is chip-shaped solid-state capacitor.In addition, in condenser assembly 1, the P front end, positive pole portion of each capacitor cell 10 all extends to form positive pole pin 12, and positive pole pin 12 bends and is together welded in a positive pole pin 13 to reach electric connection.The negative pole portion N of capacitor cell 10 is then electrically connected to a negative pole pin 14.Generally more utilize the coated above-mentioned condenser assembly 1 of the materials such as synthetic resin, positive pole pin 12, and the positive pole pin 13 of part and negative pole pin 14 and form a packaging body 15, to form a solid electrolytic capacitor encapsulating structure 100.Therefore, positive pole pin 13 comprises and is positioned at portion of burying within this packaging body 15 131 and and is positioned at exposed portion 132 outside this packaging body 15, and negative pole pin 14 comprises and is positioned at portion of burying within this packaging body 15 141 and and is positioned at exposed portion 142 outside this packaging body 15.Exposed portion 141 and 142 can be bent to reach electric connection with other assemblies further.
But, in the process forming packaging body 15, because the synthetic resin for the formation of packaging body 15 is different from the thermal coefficient of expansion of the material of each assembly in condenser assembly 1, may has and cannot reach compact package, or encapsulation process produces the shortcoming such as defect or micro chink.Particularly, for the solid electrolytic capacitor encapsulating structure 100 that condenser assembly 1 is made up of chip capacitor, because it typically uses epoxy resin and organic substance, the hydrophilic materials such as the constituent of such as silica sand and aluminium foil manufacture, and in use easilier cause shorten useful life because of moisture absorption.Thus, prior art possibly cannot reach the solid electrolytic capacitor encapsulating structure 100 with excellent air-tightness, watertightness, and makes solid electrolytic capacitor encapsulating structure 100 have the problem such as short circuit or leakage current in use, and then shortens its useful life.Therefore, how to improve above-mentioned cannot the problem of compact package, will be the problem that relevant industry is urgently made great efforts.
Edge is, the utility model people can improve thoughts on above-mentioned disappearance, is that spy concentrates on studies and coordinates the utilization of scientific principle, finally proposes a kind of reasonable in design and effectively improve the utility model of above-mentioned disappearance.
Summary of the invention
For the deficiencies in the prior art, the purpose of this utility model is to provide a kind of manufacture method of solid electrolytic capacitor encapsulating structure for solving the problem.
A kind of manufacture method of solid electrolytic capacitor encapsulating structure, this solid electrolytic capacitor encapsulating structure comprises the packaging body of a condenser assembly, the electrode pin of at least one this condenser assembly of electric connection and a part for this condenser assembly coated and this electrode pin at least one, and this electrode pin at least one has one is positioned at and buries portion and within this packaging body and be positioned at exposed portion outside this packaging body, the manufacture method of this solid electrolytic capacitor encapsulating structure comprises:
Carry out a pre-treatment step, form an electrode pin diaphragm with this exposed portion of coated this electrode pin at least one;
Carry out a plating steps, to form an infiltration and to seal the nano thin-film in the micro-structural of this solid electrolytic capacitor encapsulating structure; And carry out a post-processing step, remove this electrode pin diaphragm.
Preferably, this nano thin-film formed by polyphenylene ethyl (Parylene).
Preferably, this plating steps further comprises:
Heating paraxylene dimer is to be vaporized;
The paraxylene dimer of Pintsch process after gasification, to generate parylene monomer; And
Deposition parylene monomer is on this solid electrolytic capacitor encapsulating structure, and wherein this parylene monomer is polymerized in deposition process, to form this nano thin-film formed by polyphenylene ethyl.
Preferably, this deposition step is that use one vacuum phase deposition equipment at room temperature carries out.
Preferably, this nano thin-film has a thickness, and this thickness is less than 1 micron.
Preferably, this condenser assembly comprises chip capacitor or a convoluted capacitor of multiple sequentially storehouse.
Preferably, this micro-structural of this solid electrolytic capacitor encapsulating structure comprises: the Micro-v oid that this packaging body is formed in processing procedure process and micro chink and the micro chink between this at least one electrode pin and this packaging body.
A kind of solid electrolytic capacitor encapsulating structure, comprising:
One condenser assembly;
At least one electrode pin, it is electrically connected this condenser assembly;
One packaging body, a part for these electrode pins whole and at least one of its this condenser assembly coated, wherein this electrode pin at least one has one and is positioned at and buries portion and within this packaging body and be positioned at exposed portion outside this packaging body; And
One nano thin-film formed by a nano material, it is covered on the surface of this packaging body, and wherein the Micro-v oid on the surface of this packaging body and micro chink and the micro chink between this packaging body and this electrode pin at least one seal by this nano material.
Preferably, this nano material is polyphenylene ethyl.
Preferably, this condenser assembly comprises chip capacitor or a convoluted capacitor of multiple sequentially storehouse.
The technical solution of the utility model has following beneficial effect:
The solid electrolytic capacitor encapsulating structure that the utility model embodiment provides and manufacture method thereof, reach sealing effectiveness in the micro-structural produced by making the material molecule of nanoscale infiltration solid electrolytic capacitor encapsulating structure during processing procedure.Thus, effectively can improve air-tightness and the watertightness of solid electrolytic capacitor encapsulating structure, and then avoid solid electrolytic capacitor encapsulating structure to be short-circuited or leakage current when operating.Accordingly, solid electrolytic capacitor encapsulating structure provided by the utility model can have the useful life through improvement.On the other hand, nano thin-film in the solid electrolytic capacitor encapsulating structure that the utility model embodiment provides can be formed via plated film at normal temperatures, and in this plating steps, also be able to the parameters such as precise hard_drawn tuhes coating film thickness and uniformity, thus the capacitor with surfaces of complex shape is applicable to, such as chip capacitor.In addition, this plating steps more can on the object of larger area film forming, thus reduce production cost.
Accompanying drawing explanation
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Fig. 1 is the schematic diagram of the structure of known stack-type solid electrolytic capacitor.
Fig. 2 A and 2B is the flow chart of the manufacture method of the solid electrolytic capacitor encapsulating structure of the utility model embodiment.
Fig. 3 A ~ 3C is that in the manufacture method of solid electrolytic capacitor encapsulating structure of the utility model embodiment, solid electrolytic capacitor encapsulating structure is at the schematic diagram of different phase.
Fig. 4 A is the enlarged drawing of part A in Fig. 3 A.
Fig. 4 B is the enlarged drawing of part B in Fig. 3 B.
Embodiment
In order to have a clear understanding of the technical solution of the utility model, its detailed structure will be proposed in the following description.Obviously, the concrete execution of the utility model embodiment also not enough specific details being limited to those skilled in the art and haveing the knack of.Be below, by specific instantiation, execution mode about " solid electrolytic capacitor encapsulating structure and manufacture method thereof " disclosed by the utility model is described, those skilled in the art can understand advantage of the present utility model and effect by content disclosed in the present specification.The utility model is implemented by other different specific embodiments or is applied, and the every details in this specification also based on different viewpoints and application, can carry out various modification and change under not departing from spirit of the present utility model.In addition, graphic being only of the present utility model is simply illustrated to illustrate, not according to the description of actual size, first give chat bright.Following execution mode will further describe correlation technique content of the present utility model, but the content disclosed be not used to limit technology category of the present utility model.
First, refer to shown in Fig. 2 ~ Fig. 4, Fig. 2 A and 2B is the flow chart of the manufacture method of the solid electrolytic capacitor encapsulating structure of the utility model embodiment, Fig. 3 A ~ 3C is in the manufacture method of solid electrolytic capacitor encapsulating structure of the utility model embodiment, solid electrolytic capacitor encapsulating structure is at the schematic diagram of different phase, Fig. 4 A is the enlarged drawing of part A in Fig. 3 A, and Fig. 4 B is the enlarged drawing of part B in Fig. 3 B.Refer to Fig. 3 A, solid electrolytic capacitor encapsulating structure 200 comprises condenser assembly 2, is electrically connected the packaging body 25 of the electrode pin 3 of condenser assembly 2 and a part for coated condenser assembly 2 and electrode pin 3, and electrode pin 3 has the exposed portion 311,321 being positioned at and burying portion 310,320 within packaging body and be positioned at outside packaging body.The manufacture method of the solid electrolytic capacitor encapsulating structure 200 of the utility model embodiment comprises:
First, refer to Fig. 3 B, carry out a pre-treatment step, form electrode pin diaphragm 21 with the exposed portion 311,321 (step S100) of jacketed electrode pin 3.The condenser assembly 2 of the utility model embodiment comprises the chip capacitor 20 of multiple sequentially storehouse.But the kind forming the capacitor of condenser assembly 2 is not subject to the limits, and in other words, condenser assembly 2 can comprise the convoluted capacitor of multiple storehouse.Solid electrolytic capacitor encapsulating structure 200 comprises two electrode pins 3, is respectively positive pole pin 31 and negative pole pin 32.Positive pole pin 31 is electrically connected with the multiple positive pole pins 22 extended to form by the P front end, positive pole portion of condenser assembly 2, and negative pole pin 32 is electrically connected with the negative pole portion N of condenser assembly 2.In addition, positive pole pin 31 comprises the exposed portion 311 being positioned at and burying portion 310 within packaging body 25 and be positioned at outside packaging body 25, and negative pole pin 32 comprises the exposed portion 321 being positioned at and burying portion 320 within packaging body 25 and be positioned at outside packaging body 25.For example, in this step, electrode pin diaphragm 21 can for the adhesive tape formed by high molecular polymer, and the wherein one side of adhesive tape has stickiness.Form electrode pin diaphragm 21 can comprise and utilize adhesive tape to be wound around and the surface attaching to the exposed portion 311 of positive pole pin 31 and the exposed portion 321 of negative pole pin 32.But the mode forming electrode pin diaphragm 21 is not subject to the limits.Formed electrode pin diaphragm 21 be the depositing nano-materials used in order to avoid follow-up plating steps reduce in the exposed portion 311,321 of pin 3 its etc. solderability.
Next, please refer to Fig. 4 A and 4B.Carry out plating steps, to form an infiltration and to seal the nano thin-film 4 (step S102) in the micro-structural of this solid electrolytic capacitor encapsulating structure 200, wherein, the nano material forming nano thin-film 4 is infiltrated in the micro-structural 251 (that is the defect produced in known manufacturing process) of solid electrolytic capacitor encapsulating structure 200.For example, the nano material in order to form nano thin-film 4 can be high molecular polymer.In the present embodiment, nano material is polyphenylene ethyl (Parylene).In the utility model embodiment, the thickness of the nano thin-film 4 formed by nano material is for being less than 1 micron.But the thickness of nano thin-film 4 can be adjusted according to other parameters in the manufacture method of product property or solid electrolytic capacitor encapsulating structure 200.
In addition, please refer to Fig. 3 B, step S102 comprises: heating paraxylene dimer is to be vaporized; The paraxylene dimer of Pintsch process after gasification, to generate parylene monomer; And deposition parylene monomer is on solid electrolytic capacitor encapsulating structure 200, wherein parylene monomer occurs to be polymerized to form the nano thin-film 4 formed by polyphenylene ethyl in deposition process.In detail, be different from general liquid coating method, the step that the utility model embodiment forms nano thin-film 4 utilizes gasification, Pintsch process and deposition plating supervisor and reaches.For example, gasification temperature can be 150 ~ 170 DEG C, and the temperature of Pintsch process can be 600 ~ 700 DEG C.Said temperature condition can be adjusted according to other parameters of processing procedure.In addition, for example, last deposition plating program can use a vacuum phase deposition equipment at room temperature to carry out.
It is worth mentioning that, above-mentioned deposition plating program can at room temperature be carried out, and can also the thickness of nano thin-film 4 that deposits of precise hard_drawn tuhes and the uniformity of deposition during deposition plating, therefore can be applicable to have the device surface compared with complicated shape.Thus, this deposition plating program is particularly suitable for the micromodule that this kind comprises six formulas of chip capacitor.In addition, because this deposition plating program is able to form film on the surface of larger area, also can reduce the manufacturing cost of device simultaneously.The nano thin-film 4 formed thus has function that is moistureproof and antiacid alkali, makes solid electrolytic capacitor encapsulating structure 200 have excellent useful life and reliability.
After the program of the deposition plating of step S102, except forming nano thin-film 4 on the surface of solid electrolytic capacitor encapsulating structure 200, nano material can be infiltrated the micro-structural 251 of solid electrolytic capacitor encapsulating structure 200 and be reached the effect of sealing.For example, as shown in Figure 4, the micro-structural 251 of solid electrolytic capacitor encapsulating structure 200 can comprise the Micro-v oid 2511 and micro chink 2512 that are formed and produce in the processing procedure of packaging body 25, and the micro chink 2513 between electrode pin 3 and packaging body 25.In detail, the nano material with nano-scale can be inserted in micro-structural 251 during the program of deposition plating, and/or nano thin-film 4 is formed in micro-structural 251, the air-tightness of solid electrolytic capacitor encapsulating structure 200 and watertightness not affected by micro-structural 251.
Finally, carry out a post-processing step, remove electrode pin diaphragm 21 (S104).The mode removing electrode pin diaphragm 21 can comprise the processing method used in any this area.For example, if electrode pin diaphragm 21 is an adhesive tape, by board, the surface of adhesive tape from the exposed portion 311 of positive pole pin 31 and the exposed portion 321 of negative pole pin 32 is removed.Other modes removing electrode pin diaphragm 21 comprise by chemical solvent process electrode pin diaphragm 21 to make it to dissolve.
After step S104, can further exposed portion 311,321 be bent, to reach electric connection with other assemblies.The structure of the solid electrolytic capacitor encapsulating structure 200 manufactured by above-mentioned steps as shown in Figure 3 C.
According to said method, the utility model provides solid electrolytic capacitor encapsulating structure 200 in addition, and it comprises condenser assembly 2; At least one electrode pin 3, it is electrically connected condenser assembly 2; Packaging body 25, a part for whole and at least one electrode pins 3 of its coated condenser assembly 2, wherein at least one electrode pin 3 has the exposed portion 33 being positioned at and burying portion 30 within packaging body 25 and be positioned at outside packaging body 25; And the nano thin-film 4 to be formed by nano material, it is covered in the surface of packaging body 25, and wherein the micro chink 2513 of the Micro-v oid 2511 on the surface of packaging body 25 and micro chink 2513 and packaging body 25 and at least one electrode pin 3 seam crossing seals by nano material.
The manufacture method of the solid electrolytic capacitor encapsulating structure 200 that relevant the utility model provides, and wherein the detailed materials of each assembly and function as described in aforementioned explanation, therefore no longer repeat specification.
In sum, the beneficial effects of the utility model can be, the solid electrolytic capacitor encapsulating structure that the utility model embodiment provides and manufacture method thereof, its step by " formed one infiltrate and the nano thin-film sealed in the micro-structural of this solid electrolytic capacitor encapsulating structure " and guarantee the air-tightness of solid electrolytic capacitor encapsulating structure, watertightness and anti acid alkali performance, promotes its useful life by this greatly.For example, the solid electrolytic capacitor encapsulating structure that the utility model embodiment provides is by the test under hot and humid, comprise 60 DEG C/90% time 1000HR, 85 DEG C/85% time 500HR, and also pass through the thermal shock test of 1000HR at-55 DEG C ~ 125 DEG C.
Finally should be noted that: above embodiment is only in order to illustrate that the technical solution of the utility model is not intended to limit; although be described in detail the utility model with reference to above-described embodiment; those of ordinary skill in the field still can modify to embodiment of the present utility model or equivalent replacement; these do not depart from any amendment of the utility model spirit and scope or equivalent replacement, are all applying within the claims awaited the reply.
symbol description
Stack-type solid electrolytic capacitor 100
Condenser assembly 1,2
Capacitor cell 10
Conducting resin material 11
Positive pole pin 12,22
Positive pole pin 13,31
Inside bury portion 131,310,320
Exposed portion 132,311,321
Negative pole pin 14
Inside bury portion 141
Exposed portion 142
Packaging body 15,25
Positive pole portion P
Negative pole portion N
Step S100, S102, S104, S1021, S1022, S1023
Solid electrolytic capacitor encapsulating structure 200
Chip capacitor 20
Electrode pin diaphragm 21
Micro-structural 251
Micro chink 2511,2513
Micro-v oid 2512
Electrode pin 3
Nano thin-film 4
Claims (3)
1. a solid electrolytic capacitor encapsulating structure, is characterized in that, comprising:
One condenser assembly;
At least one electrode pin, it is electrically connected this condenser assembly;
One packaging body, a part for these electrode pins whole and at least one of its this condenser assembly coated, wherein this electrode pin at least one has one and is positioned at and buries portion and within this packaging body and be positioned at exposed portion outside this packaging body; And
One nano thin-film formed by a nano material, it is covered on the surface of this packaging body, and wherein the Micro-v oid on the surface of this packaging body and micro chink and the micro chink between this packaging body and this electrode pin at least one seal by this nano material.
2. the solid electrolytic capacitor encapsulating structure as described in claims 1, is characterized in that, this nano material is polyphenylene ethyl.
3. the solid electrolytic capacitor encapsulating structure as described in claims 1, is characterized in that, this condenser assembly comprises chip capacitor or a convoluted capacitor of multiple sequentially storehouse.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520845546.7U CN205211601U (en) | 2015-10-28 | 2015-10-28 | Solid electrolytic capacitor packaging structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520845546.7U CN205211601U (en) | 2015-10-28 | 2015-10-28 | Solid electrolytic capacitor packaging structure and manufacturing method thereof |
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| CN205211601U true CN205211601U (en) | 2016-05-04 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845442A (en) * | 2015-10-28 | 2016-08-10 | 钰邦电子（无锡）有限公司 | Solid electrolytic capacitor package structure and manufacturing method thereof |
| CN107665772A (en) * | 2016-07-29 | 2018-02-06 | 钰邦电子（无锡）有限公司 | Novel capacitor encapsulating structure |
-
2015
- 2015-10-28 CN CN201520845546.7U patent/CN205211601U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845442A (en) * | 2015-10-28 | 2016-08-10 | 钰邦电子（无锡）有限公司 | Solid electrolytic capacitor package structure and manufacturing method thereof |
| CN107665772A (en) * | 2016-07-29 | 2018-02-06 | 钰邦电子（无锡）有限公司 | Novel capacitor encapsulating structure |
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