CN104952630A - Mini-sized supercapacitor with high flexibility and high transparency and large-scale preparation method of mini-sized supercapacitor - Google Patents

Mini-sized supercapacitor with high flexibility and high transparency and large-scale preparation method of mini-sized supercapacitor Download PDF

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CN104952630A
CN104952630A CN201510437578.8A CN201510437578A CN104952630A CN 104952630 A CN104952630 A CN 104952630A CN 201510437578 A CN201510437578 A CN 201510437578A CN 104952630 A CN104952630 A CN 104952630A
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high flexibility
mini
transparency
coated
super capacitor
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麦立强
肖蓓
石孟竹
田晓聪
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Wuhan University of Technology WUT
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Wuhan University of Technology WUT
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/46—Metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/48—Conductive polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Abstract

The invention relates to a mini-sized supercapacitor with high flexibility and high transparency and a large-scale preparation method of the mini-sized supercapacitor. The mini-sized supercapacitor comprises a substrate; a current collector metal is deposited on the substrate to be used as an interdigitated electrode. The mini-sized supercapacitor is characterized in that a polyaniline/carbon composite material is loaded on the interdigitated electrode through electrostatic spinning to form a three-dimensional conductive network nanowire structure; the three-dimensional conductive network nanowire structure is coated with vanadium oxide through deposition of an atomic layer. The mini-sized supercapacitor and the large-scale preparation method have the benefits that the large-scale preparation method is characterized in that through the construction of the three-dimensional conductive network nanowire structure, the charge exchange between an electrolyte ion and an electrode material is accelerated, and the surface of the three-dimensional conductive network nanowire structure is coated with V2O5 through the deposition of the atomic layer, so that the pseudocapacitance capacity of a device is enhanced, and the energy and the power density of a capacitor are improved. Meanwhile, due to the existence of the nanowire network, the high flexibility and high transparency of the device are achieved conveniently and easily.

Description

There is micro super capacitor and the large-scale producing method thereof of high flexibility and the transparency
Technical field
The present invention relates to ultracapacitor, particularly relate to a kind of wearable micro super capacitor with high flexibility and the transparency and large-scale producing method thereof.
Background technology
Along with the development of science and technology, energy storage units under micron/nano size has become wearable moving electronic components limiting factor, therefore, the micro chip of a given area realizes on the basis of the high-power stored energy of high-energy, the high flexibility and the high grade of transparency that realize device have great importance for the integrated of device and application simultaneously.
Recently, the energy supply that the micro super capacitor on chip is used as microelectronic device has caused great concern.At present, button capacitor, according to whether there is surface or nearly surface oxidation reduction reaction in stored energy process, is divided into electric double layer micro capacitance and fake capacitance micro capacitance.The former studied main material is the material with carbon element of various height than specific surface, and latter relates generally to transition metal oxide and conducting polymer and some nitride and sulfide.Improving the area ratio capacity of button capacitor and an effective means of volume and capacity ratio is development fake capacitance capacitor, and it sweeps low the storage being realized electrochemical energy under speed by reversible redox reaction.But the electrical conductivity that microelectrode materials is low is difficult to work in one fast charge and discharge process, imply a low power density.Meanwhile, because technical limitations temporarily can't prepare out the transparent flexible energy storage device of daily people needs.Therefore, develop one and there is high flexibility and transparent micro super capacitor is a problem with great challenge and significance.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned existing and propose to have micro super capacitor and the large-scale producing method thereof of high flexibility and the transparency, enhances the fake capacitance capacity of device, and then improves the energy of capacitor and power density.
The present invention solves the problems of the technologies described above adopted technical scheme: the micro super capacitor with high flexibility and the transparency, include substrate, it deposits collector metal and form interdigital electrode, it is characterized in that described polyaniline/carbon composite will be loaded in interdigital electrode by electrostatic spinning, form three-dimensional conductive networked nanowire structure, it is also coated with vanadic oxide by ald.
By such scheme, described substrate comprises: PETG (PET), PEN (PEN), polystyrene (PS), dimethyl silicone polymer (PDMS).
By such scheme, the temperature of described ald is: 100 DEG C to 250 DEG C.
By such scheme, described collector metal material is: gold, nickel, copper or silver.
By such scheme, the width range of described interdigital electrode is: 50 microns to 200 microns.
The large-scale producing method of the micro super capacitor of described high flexibility and the transparency, includes following steps:
1) in substrate, photoresist is coated with sol evenning machine;
2) in step 1) basis on, utilize optical etching technology to prepare micron order interdigital structure;
3) in step 2) basis on, micron order interdigital structure utilizes physical gas phase deposition technology at its surperficial evaporation last layer collector metal, formed interdigital electrode;
4) in step 3) basis on, utilized by electrostatic spinning technique and polyaniline/carbon composite spun on collector metal, form three-dimensional conductive networked nanowire structure;
5) in step 4) basis on, utilize technique for atomic layer deposition even coated last layer vanadic oxide on polyaniline/C composite material nanometer line;
6) in step 5) basis on, by lift-off technology removing interdigital electrode between material.
The invention has the beneficial effects as follows: the present invention proposes a kind of large-scale producing method with high flexibility and transparent micro super capacitor, be characterised in that by constructing three-dimensional conductive nanometer line network, increase the exchange of electric charge between electrolyte ion and electrode material, the vanadic oxide (V carried out on its surface 2o 5) ald is coated, enhances the fake capacitance capacity of device, and then improve energy and the power density of capacitor.Meanwhile, due to the existence of nanometer line network, achieve high flexibility and the high transparent of device easily.
Accompanying drawing explanation
Fig. 1 is the flow chart constructing high flexibility and transparent micro super capacitor device of embodiment 1;
Fig. 2 is electronic scanner microscope figure and the energy spectrogram of the device of embodiment 1;
Fig. 3 is the cyclic voltammogram curve of embodiment 1;
Fig. 4 be the high flexibility of embodiment 1 and transparent micro super capacitor prepare instance graph on a large scale.
Specific embodiments
In order to understand the present invention better, illustrate content of the present invention further below in conjunction with embodiment, but content of the present invention is not only confined to the following examples.
Embodiment 1:
As shown in Figure 1, have the preparation method of high flexibility and transparent micro super capacitor, it comprises the steps:
1) on the pet substrate with sol evenning machine coating photoresist LOR3A, rotating speed is 4000rpm, spin-coating time is 40s, use the roasting glue 5min of electric hot plate 185 DEG C subsequently, subsequently again at its surface coating photoresist S1805, rotating speed is 4000rpm, and spin-coating time is 40s, uses the roasting glue 5min of electric hot plate 115 DEG C subsequently;
2) ultraviolet light lithographic technique is utilized to prepare the interdigital structure of 80 microns wide;
3) metal fever evaporation (PVD): use thermal evaporation plated film instrument to steam metal electrode Cr/Au (5nm/20nm) in substrate, form interdigital electrode;
4) preparation of electrospinning liquid: first polyvinyl alcohol is joined the hydrogel for mass percent concentration 10%, then polyaniline/carbon composite is dispersed in chloroform, dispersed with stirring 15min;
5) under the high pressure of 9kV at interdigital electrode electrospinning one deck polyaniline/carbon composite on the surface, form three-dimensional conductive networked nanowire structure;
6) at 100 DEG C of temperature, technique for atomic layer deposition is utilized to deposit vanadic oxide on polyaniline/C composite material nanometer line surface;
7) device is carried out low temperature 200 DEG C of annealing in process;
8) put by device and leave standstill 12h in acetone, the material between interdigital electrode is all peeled off, and then use acetone and isopropyl alcohol rinse substrate, nitrogen dries up;
9) configure electrolyte solution, drip upper NaNO 3aqueous electrolyte, carries out performance test;
Carry out sem test to device, as shown in Figure 2, the electrode material obtained is three-dimensional conductive nanometer line network structure, and the unit forming electrode material have C, O, V demonstrates electrode material really for vanadic oxide (V 2o 5) coated polyaniline/carbon composite, use NaNO 3electro-chemical test is carried out as electrolyte, as shown in Figure 3, in the process of the interval discharge and recharge of 0-0.8V, vanadic oxide (V 2o 5) capacity of coated three-dimensional conductive nanometer line network structure electrode material apparently higher than not coated conventional electrode materials, calculated by cyclic voltammetry and learn, when 0.02V/s sweeps speed, vanadic oxide (V 2o 5) volume and capacity ratio of coated three-dimensional conductive nanometer line network structure electrode material is about 17.5F cm -3, as shown in Figure 4, this device can integratedly be prepared, and possesses transparent flexible equally.
Embodiment 2:
Have the preparation method of high soft transparent micro super capacitor, it comprises the steps:
1) on the pet substrate with sol evenning machine coating photoresist LOR3A, rotating speed is 4000rpm, spin-coating time is 40s, use the roasting glue 5min of electric hot plate 185 DEG C subsequently, subsequently again at its surface coating photoresist S1805, rotating speed is 4000rpm, and spin-coating time is 40s, uses the roasting glue 5min of electric hot plate 115 DEG C subsequently;
2) ultraviolet light lithographic technique is utilized to prepare the interdigital structure of 80 microns wide;
3) metal fever evaporation (PVD): use thermal evaporation plated film instrument to steam metal electrode Cr/Au (5nm/20nm) in substrate, form interdigital electrode;
4) preparation of electrospinning liquid: first polyvinyl alcohol is joined be 10% hydrogel, then polyaniline/carbon composite is dispersed in chloroform, dispersed with stirring 15min;
5) under the high pressure of 9kV at interdigital electrode electrospinning one deck polyaniline/carbon composite on the surface, form three-dimensional conductive networked nanowire structure;
6) at 100 DEG C of temperature, technique for atomic layer deposition is utilized to deposit vanadic oxide on polyaniline/C composite material nanometer line surface;
7) device is carried out low temperature 200 DEG C of annealing in process;
8) put by device and leave standstill 12h in acetone, the material between interdigital electrode is all peeled off, and then use acetone and isopropyl alcohol rinse substrate, nitrogen dries up;
9) configure electrolyte solution, drip upper Na 2sO 4aqueous electrolyte, carries out performance test.
Carry out sem test to device, the electrode material of gained is three-dimensional manometer spider lines structure, and the unit forming electrode material have C, O, V demonstrates electrode material really for vanadic oxide (V 2o 5) coated polyaniline/carbon composite, use Na 2sO 4electro-chemical test is carried out as electrolyte, in the process of the interval discharge and recharge of 0-0.8V, vanadic oxide (V 2o 5) capacity of coated three-dimensional conductive nanometer line network structure electrode material apparently higher than not coated conventional electrode materials, calculated by cyclic voltammetry and learn, when 0.02V/s sweeps speed, vanadic oxide (V 2o 5) volume and capacity ratio of coated three-dimensional conductive nanometer line network structure electrode material is about 19.5F cm -3, and this device can integratedly be prepared, and possess transparent flexible equally.
Embodiment 3:
Have the preparation method of high flexibility and transparent micro super capacitor, it comprises the steps:
1) on the pet substrate with sol evenning machine coating photoresist LOR3A, rotating speed is 4000rpm, spin-coating time is 40s, use the roasting glue 5min of electric hot plate 185 DEG C subsequently, subsequently again at its surface coating photoresist S1805, rotating speed is 4000rpm, and spin-coating time is 40s, uses the roasting glue 5min of electric hot plate 115 DEG C subsequently;
2) ultraviolet light lithographic technique is utilized to prepare the interdigital structure of 80 microns wide;
3) metal fever evaporation (PVD): use thermal evaporation plated film instrument to steam metal electrode Cr/Au (5nm/20nm) in substrate, form interdigital electrode;
4) preparation of electrospinning liquid: first polyvinyl alcohol is joined be 10% hydrogel, then polyaniline/carbon composite is dispersed in chloroform, dispersed with stirring 15min;
5) under the high pressure of 9kV at interdigital electrode electrospinning one deck polyaniline/carbon composite on the surface, form three-dimensional conductive networked nanowire structure;
6) at 100 DEG C of temperature, technique for atomic layer deposition is utilized to deposit vanadic oxide on polyaniline/C composite material nanometer line surface;
7) device is carried out low temperature 200 DEG C of annealing in process;
8) put by device and leave standstill 12h in acetone, the material between interdigital electrode is all peeled off, and then use acetone and isopropyl alcohol rinse substrate, nitrogen dries up;
9) configure electrolyte solution, drip upper LiCl aqueous electrolyte, carry out performance test;
Carry out sem test to device, the electrode material of gained is three-dimensional manometer spider lines structure, and the unit forming electrode material have C, O, V demonstrates electrode material really for vanadic oxide (V 2o 5) coated polyaniline/carbon composite, use LiCl to carry out electro-chemical test as electrolyte, in the process of the interval discharge and recharge of 0-0.8V, vanadic oxide (V 2o 5) capacity of coated three-dimensional conductive nanometer line network structure electrode material apparently higher than not coated conventional electrode materials, calculated by cyclic voltammetry and learn, when 0.02V/s sweeps speed, vanadic oxide (V 2o 5) volume and capacity ratio of coated three-dimensional conductive nanometer line network structure electrode material is about 16.8F cm -3, and this device can integratedly be prepared, and possess transparent flexible equally.
Embodiment 4:
Have the preparation method of high flexibility and transparent micro super capacitor, it comprises the steps:
1) on the pet substrate with sol evenning machine coating photoresist LOR3A, rotating speed is 4000rpm, spin-coating time is 40s, use the roasting glue 5min of electric hot plate 185 DEG C subsequently, subsequently again at its surface coating photoresist S1805, rotating speed is 4000rpm, and spin-coating time is 40s, uses the roasting glue 5min of electric hot plate 115 DEG C subsequently;
2) ultraviolet light lithographic technique is utilized to prepare the interdigital structure of 80 microns wide;
3) metal fever evaporation (PVD): use thermal evaporation plated film instrument to steam metal electrode Cr/Au (5nm/20nm) in substrate, form interdigital electrode;
4) preparation of electrospinning liquid: first polyvinyl alcohol is joined be 10% hydrogel, then polyaniline/carbon composite is dispersed in chloroform, dispersed with stirring 15min.
5) under the high pressure of 9kV at interdigital electrode electrospinning one deck polyaniline/carbon composite on the surface, form three-dimensional conductive networked nanowire structure;
6) at 200 DEG C of temperature, technique for atomic layer deposition is utilized to deposit vanadic oxide on polyaniline/C composite material nanometer line surface;
7) device is carried out low temperature 200 DEG C of annealing in process;
8) device is put in acetone leave standstill 12h, make interdigital between all peel off, then use acetone and isopropyl alcohol rinse substrate, nitrogen dries up;
9) configure electrolyte solution, drip upper aqueous electrolyte, carry out performance test;
Carry out sem test to device, the electrode material of gained is three-dimensional manometer spider lines structure, and the unit forming electrode material have C, O, V demonstrates electrode material really for vanadic oxide (V 2o 5) coated polyaniline/carbon composite, use NaNO 3electro-chemical test is carried out as electrolyte, in the process of the interval discharge and recharge of 0-0.8V, vanadic oxide (V 2o 5) capacity of coated three-dimensional conductive nanometer line network structure electrode material apparently higher than not coated conventional electrode materials, calculated by cyclic voltammetry and learn, when 0.02V/s sweeps speed, vanadic oxide (V 2o 5) volume and capacity ratio of coated three-dimensional conductive nanometer line network structure electrode material is about 18.1F cm -3, and this device can integratedly be prepared, and possess transparent flexible equally.
Embodiment 5:
Have the preparation method of high flexibility and transparent micro super capacitor, it comprises the steps:
1) on the pet substrate with sol evenning machine coating photoresist LOR3A, rotating speed is 4000rpm, spin-coating time is 40s, use the roasting glue 5min of electric hot plate 185 DEG C subsequently, subsequently again at its surface coating photoresist S1805, rotating speed is 4000rpm, and spin-coating time is 40s, uses the roasting glue 5min of electric hot plate 115 DEG C subsequently;
2) ultraviolet light lithographic technique is utilized to prepare the interdigital structure of 150 microns wide;
3) metal fever evaporation (PVD): use thermal evaporation plated film instrument to steam metal electrode Cr/Au (5nm/20nm) in substrate, form interdigital electrode;
4) preparation of electrospinning liquid: first polyvinyl alcohol is joined be 10% hydrogel, then polyaniline/carbon composite is dispersed in chloroform, dispersed with stirring 15min;
5) under the high pressure of 9kV on inter-digital structure surface electrospinning one deck polyaniline/C composite material nanometer line structure film.
6) at 100 DEG C of temperature, technique for atomic layer deposition is utilized to deposit vanadic oxide on polyaniline/C composite material nanometer line surface;
7) device is carried out low temperature 200 DEG C of annealing in process;
8) put by device and leave standstill 12h in acetone, the material between interdigital electrode is all peeled off, and then use acetone and isopropyl alcohol rinse substrate, nitrogen dries up;
9) configure electrolyte solution, drip upper aqueous electrolyte, carry out performance test;
Carry out sem test to device, the electrode material of gained is three-dimensional manometer spider lines structure, and the unit forming electrode material have C, O, V demonstrates electrode material really for vanadic oxide (V 2o 5) coated polyaniline/carbon composite, use NaNO 3electro-chemical test is carried out as electrolyte, in the process of the interval discharge and recharge of 0-0.8V, vanadic oxide (V 2o 5) capacity of coated three-dimensional conductive nanometer line network structure electrode material apparently higher than not coated conventional electrode materials, calculated by cyclic voltammetry and learn, when 0.02V/s sweeps speed, vanadic oxide (V 2o 5) volume and capacity ratio of coated three-dimensional conductive nanometer line network structure electrode material is about 17.85F cm -3, and this device can integratedly be prepared, and possess transparent flexible equally.
Embodiment 6:
Have the preparation method of high flexibility and transparent micro super capacitor, it comprises the steps:
1) in PEN substrate, photoresist LOR3A is coated with sol evenning machine, rotating speed is 4000rpm, spin-coating time is 40s, use the roasting glue 5min of electric hot plate 185 DEG C subsequently, subsequently again at its surface coating photoresist S1805, rotating speed is 4000rpm, and spin-coating time is 40s, uses the roasting glue 5min of electric hot plate 115 DEG C subsequently;
2) ultraviolet light lithographic technique is utilized to prepare the interdigital structure of 80 microns wide;
3) metal fever evaporation (PVD): use thermal evaporation plated film instrument to steam metal electrode Cr/Au (5nm/20nm) in substrate, form interdigital electrode;
4) preparation of electrospinning liquid: first polyvinyl alcohol is joined be 10% hydrogel, then polyaniline/carbon composite is dispersed in chloroform, dispersed with stirring 15min;
5) under the high pressure of 9kV at interdigital electrode electrospinning one deck polyaniline/carbon composite on the surface, form three-dimensional conductive networked nanowire structure;
6) at 100 DEG C of temperature, technique for atomic layer deposition is utilized to deposit vanadic oxide on polyaniline/C composite material nanometer line surface;
7) device is carried out low temperature 200 DEG C of annealing in process;
8) put by device and leave standstill 12h in acetone, the material between interdigital electrode is all peeled off, and then use acetone and isopropyl alcohol rinse substrate, nitrogen dries up;
9) configure electrolyte solution, drip upper NaNO 3aqueous electrolyte, carries out performance test;
Carry out sem test to device, the electrode material of gained is three-dimensional manometer spider lines structure, and the unit forming electrode material have C, O, V demonstrates electrode material really for vanadic oxide (V 2o 5) coated polyaniline/carbon composite, use Na 2sO 4electro-chemical test is carried out as electrolyte, in the process of the interval discharge and recharge of 0-0.8V, vanadic oxide (V 2o 5) capacity of coated three-dimensional conductive nanometer line network structure electrode material apparently higher than not coated conventional electrode materials, calculated by cyclic voltammetry and learn, when 0.02V/s sweeps speed, vanadic oxide (V 2o 5) volume and capacity ratio of coated three-dimensional conductive nanometer line network structure electrode material is about 16.83F cm -3, and this device can integratedly be prepared, and possess transparent flexible equally.

Claims (6)

1. there is the micro super capacitor of high flexibility and the transparency, include substrate, it deposits collector metal and form interdigital electrode, it is characterized in that described polyaniline/carbon composite will be loaded in interdigital electrode by electrostatic spinning, form three-dimensional conductive networked nanowire structure, it is also coated with vanadic oxide by ald.
2. the micro super capacitor of high flexibility according to claim 1 and the transparency, is characterized in that described substrate comprises: PETG (PET), PEN (PEN), polystyrene (PS), dimethyl silicone polymer (PDMS).
3. the micro super capacitor of high flexibility according to claim 1 and the transparency, is characterized in that the temperature of described ald is: 100 DEG C to 250 DEG C.
4. the micro super capacitor of high flexibility according to claim 1 and the transparency, is characterized in that described collector metal material is: gold, nickel, copper or silver.
5. the micro super capacitor of high flexibility according to claim 1 and the transparency, is characterized in that the width range of described interdigital electrode is: 50 microns to 200 microns.
6. the large-scale producing method of the micro super capacitor of high flexibility according to claim 1 and the transparency, includes following steps:
1) in substrate, photoresist is coated with sol evenning machine;
2) in step 1) basis on, utilize optical etching technology to prepare micron order interdigital structure;
3) in step 2) basis on, micron order interdigital structure utilizes physical gas phase deposition technology at its surperficial evaporation last layer collector metal, formed interdigital electrode;
4) in step 3) basis on, utilized by electrostatic spinning technique and polyaniline/carbon composite spun on collector metal, form three-dimensional conductive networked nanowire structure;
5) in step 4) basis on, utilize technique for atomic layer deposition even coated last layer vanadic oxide on polyaniline/C composite material nanometer line;
6) in step 5) basis on, by lift-off technology removing interdigital electrode between material.
CN201510437578.8A 2015-07-23 2015-07-23 Mini-sized supercapacitor with high flexibility and high transparency and large-scale preparation method of mini-sized supercapacitor Pending CN104952630A (en)

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CN107346712A (en) * 2017-07-24 2017-11-14 淮海工学院 A kind of flexible and transparent ultracapacitor based on micro-nano technology technology
CN108251820A (en) * 2018-03-09 2018-07-06 无锡博硕珈睿科技有限公司 The manufacturing method and manufacturing equipment of self-heating product/material
CN109817469A (en) * 2017-11-20 2019-05-28 北京纳米能源与系统研究所 Supercapacitor, energy packet, self-charging energy packet and preparation method thereof
CN110164704A (en) * 2019-04-30 2019-08-23 同济大学 A kind of enhanced flexible super capacitor of light and preparation method thereof
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US11610742B2 (en) * 2016-05-02 2023-03-21 The Regents Of The University Of California Enhanced cycle lifetime with gel electrolyte for MNO2 nanowire capacitors

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