CN205175504U - Measurement device for seed crystal height in liquid silicon of high temperature in polycrystalline silicon ingot furnace - Google Patents
Measurement device for seed crystal height in liquid silicon of high temperature in polycrystalline silicon ingot furnace Download PDFInfo
- Publication number
- CN205175504U CN205175504U CN201521011714.9U CN201521011714U CN205175504U CN 205175504 U CN205175504 U CN 205175504U CN 201521011714 U CN201521011714 U CN 201521011714U CN 205175504 U CN205175504 U CN 205175504U
- Authority
- CN
- China
- Prior art keywords
- polycrystalline silicon
- carbon rope
- seed crystal
- silicon ingot
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a measurement device for seed crystal height in liquid silicon of high temperature in polycrystalline silicon ingot furnace, solved measure in the polycrystalline silicon ingot casting fritting technology when bottom seed crystal is high in the ingot furnace deviation big with measure problem with high costs. It measures support (13) to include to be provided with on measuring aperture (12) of polycrystalline silicon ingot furnace furnace body top cap (5), be provided with respectively on measuring support (13) servo motor (11) and leading wheel (4), it receive and releases round (1) to be provided with the carbon rope on the output shaft of servo motor (11), the one end winding of carbon rope (2) is on the carbon rope receive and releases round (1), it has connect the silicon nitride to survey crystal bar (6) to hang at the tip of the other end of carbon rope (2), be provided with tension sensor (9) of carbon rope (2) and photoelectricity position sensor (10) that crystal bar (6) were surveyed to the silicon nitride respectively on measuring support (13). The utility model has the characteristics of easy operation, it is accurate rapidly to measure, low cost.
Description
Technical field
To the present invention relates in a kind of high-temperature liquid state silicon the height measuring device of bottom seed crystal, particularly the measurement mechanism in high-temperature liquid state silicon solid-liquid face in a kind of polycrystalline silicon ingot or purifying furnace.
Background technology
The technical process control of polycrystalline silicon ingot casting link can affect the important electrical parameter of crystal, directly has influence on the height of further battery conversion efficiency.Polycrystalline silicon casting ingot process technology is by the initial external traditional fine melt technique grasped, as GT-SOLAR company of the U.S. and French ECM company, to the follow-up accurate single crystal technology by researching and developing both at home and abroad simultaneously, as ALD company and the domestic enterprise such as brilliant Australia photovoltaic, phoenix photovoltaic of Germany, again to only having China to carry out the fine melt high efficient technology researched and developed, fritting high-efficiency polycrystalline casting ingot process is up till now domestic again becomes main flow, the lifting of casting ingot process each time, capital makes the electric property of silicon chip more stable, crystal structure is more desirable, and dislocation reduces further.In fritting process, critical control point is exactly the control of bottom seed crystal height, and seed crystal retains too high, can affect to obtain material rate, and seed crystal retains too low, may become fine melt, not have the effect of fritting.Therefore current all producers all take manual measurement, adopt high purity quartz rod slowly to insert in high-temperature liquid state silicon, when waiting glass bar to reach solid state si, judge home position again by the feel of workman, completed the determination of height by the survey calculation of ruler.This operation is just high to personnel, and person works measures greatly, and error is large, and the at high temperature easily flexural deformation of all high purity quartz rods, and have influence on the judgement of initial point, general maximum use has just been scrapped for twice, and the consumptive material expense of relative measurement is higher.
Summary of the invention
The invention provides the measurement mechanism of seed crystal height in high-temperature liquid state silicon in a kind of polycrystalline silicon ingot or purifying furnace, solving in polycrystalline silicon ingot casting half process of smelting deviation when measuring bottom seed crystal height large, the technical matters that complicated operation is high with measuring cost.
The present invention solves above technical matters by the following technical programs:
The measurement mechanism of seed crystal height in high-temperature liquid state silicon in a kind of polycrystalline silicon ingot or purifying furnace, comprise the solid seed crystal in polycrystalline silicon ingot or purifying furnace, solid seed crystal is provided with liquid-state silicon, polycrystalline silicon ingot casting furnace body top cover is provided with measured hole, measured hole is provided with measurement support, measurement support is respectively arranged with servomotor and angle sheave, the output shaft of servomotor is provided with carbon rope folding and unfolding wheel, the one ends wound of carbon rope is on carbon rope folding and unfolding wheel, the other end of carbon rope is successively by extending in polycrystalline silicon ingot or purifying furnace after angle sheave and measured hole, hang in the end of the other end of carbon rope and be connected to silicon nitride survey crystal bar, measuring the photoelectrical position sensor of tension pick-up and silicon nitride survey crystal bar support being respectively arranged with carbon rope.
Measurement support directly over measured hole is provided with view window, and the bottom face that crystal bar surveyed by silicon nitride is quadrant arc surface.
The present invention have chosen the survey crystal bar of silicon nitride material, its high-temperature stability is good and do not react with liquid-state silicon, its uniform descent under Gravitative Loads of driven by servomotor, can sink in liquid-state silicon, when arriving solid-liquid interface, pulling force suffered by carbon rope can be close to zero instantaneously, now tension pick-up will be checked through tension force and reduces suddenly, can think that solid-liquid interface has been arrived in this position, by the rotating cycle of servomotor and the proportionate relationship of carbon rope, can the position of scaled distance initial point, and then the height remaining seed crystal can be determined.Then tempilstick is mentioned by servomotor antiport, when tempilstick to top reach photoelectrical position sensor time, be checked through origin position, servomotor shuts down.
The present invention makes the sudden change of carbon rope tension judge solid-liquid position with supporting function when arriving solid-liquid interface by surveying crystal bar under gravity, by system automatically convert determine that fritting is efficient time seed crystal residual altitude, this device does not need to make any change to existing body of heater, be arranged on the watch window position of original body of heater, have simple to operate, measure rapidly accurately, feature with low cost.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is that the present invention overlooks the structural representation on direction.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail:
The measurement mechanism of seed crystal height in high-temperature liquid state silicon in a kind of polycrystalline silicon ingot or purifying furnace, comprise the solid seed crystal 8 in polycrystalline silicon ingot or purifying furnace, solid seed crystal 8 is provided with liquid-state silicon 7, polycrystalline silicon ingot casting furnace body top cover 5 is provided with measured hole 12, measured hole 12 is provided with and measures support 13, measurement support 13 is respectively arranged with servomotor 11 and angle sheave 4, the output shaft of servomotor 11 is provided with carbon rope folding and unfolding wheel 1, the one ends wound of carbon rope 2 is on carbon rope folding and unfolding wheel 1, the other end of carbon rope 2 is successively by extending in polycrystalline silicon ingot or purifying furnace after angle sheave 4 and measured hole 12, hang in the end of the other end of carbon rope 2 and be connected to silicon nitride survey crystal bar 6, measuring the photoelectrical position sensor 10 of the tension pick-up 9 and silicon nitride survey crystal bar 6 support 13 being respectively arranged with carbon rope 2.
Measurement support 13 directly over measured hole 12 is provided with view window 3, and the bottom face that crystal bar 6 surveyed by silicon nitride is quadrant arc surface.
Hang with silicon nitride at carbon rope 2 through angle sheave 4 lower end and survey crystal bar 6, silicon nitride is surveyed crystal bar 6 initial position and is determined through photoelectrical position sensor 10, when servomotor turns clockwise, silicon nitride is surveyed crystal bar 6 and is declined under gravity, enter body of heater top cover 5, vertically to drop in stove in crucible in liquid-state silicon 7 always, density due to silicon nitride survey crystal bar 6 is greater than the density of liquid-state silicon, continuation declines by it, the tension force that now tension pick-up 9 measures can reduce gradually, when silicon nitride survey crystal bar 6 arrives the interface of solid seed crystal 8, pulling force suffered by carbon rope 2 can be close to zero, now the tension force of tension pick-up 9 can close to zero, servomotor 11 automatically record is now solid-liquid separatrix, by calculating the residual altitude of display solid state si 8 automatically.In whole testing process, personnel also can observe from view window 3 pairs of measuring processes the accuracy guaranteeing detection data simultaneously.In order to anti-blocking rope 2 ruptures, silicon nitride survey crystal bar 6 drops and breaks the danger that crucible causes overflow, silicon nitride is surveyed crystal bar 6 lower end spy and is taken design at the bottom of orthodrome, ensure that silicon nitride surveys crystal bar 6 when liquid-state silicon 7 is entered in free-falling, naturally-occurring sidesway under the uneven impulsive force of liquid-state silicon, topple over, reduce the danger that weight directly impacts crucible bottom.
After using this device, all automatically, complete during measurement, servomotor lands from initial point, when the nitrogenize silicon rod measured arrives solid-liquid face, the pulling force of tension pick-up is instantaneous is zero, controller can judge that this position is solid-liquid face, and the number of turns rotated by servomotor is converted falling head automatically, is calculated demonstrate current solid-liquid position by initial point.Simple to operation, and nitrogenize silicon rod only needs the silicon above periodic cleaning to remain, always can Reusability.
Claims (2)
1. the measurement mechanism of seed crystal height in high-temperature liquid state silicon in a polycrystalline silicon ingot or purifying furnace, comprise the solid seed crystal (8) in polycrystalline silicon ingot or purifying furnace, solid seed crystal (8) is provided with liquid-state silicon (7), it is characterized in that, polycrystalline silicon ingot casting furnace body top cover (5) is provided with measured hole (12), measured hole (12) is provided with and measures support (13), measurement support (13) is respectively arranged with servomotor (11) and angle sheave (4), the output shaft of servomotor (11) is provided with carbon rope folding and unfolding wheel (1), the one ends wound of carbon rope (2) is in carbon rope folding and unfolding wheel (1), the other end of carbon rope (2) is successively by extending in polycrystalline silicon ingot or purifying furnace after angle sheave (4) and measured hole (12), hang in the end of the other end of carbon rope (2) and be connected to silicon nitride survey crystal bar (6), measuring the photoelectrical position sensor (10) of tension pick-up (9) and silicon nitride survey crystal bar (6) support (13) being respectively arranged with carbon rope (2).
2. the measurement mechanism of seed crystal height in high-temperature liquid state silicon in a kind of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterized in that, measurement support (13) directly over measured hole (12) is provided with view window (3), and the bottom face that crystal bar (6) surveyed by silicon nitride is quadrant arc surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521011714.9U CN205175504U (en) | 2015-12-08 | 2015-12-08 | Measurement device for seed crystal height in liquid silicon of high temperature in polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521011714.9U CN205175504U (en) | 2015-12-08 | 2015-12-08 | Measurement device for seed crystal height in liquid silicon of high temperature in polycrystalline silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205175504U true CN205175504U (en) | 2016-04-20 |
Family
ID=55739484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521011714.9U Active CN205175504U (en) | 2015-12-08 | 2015-12-08 | Measurement device for seed crystal height in liquid silicon of high temperature in polycrystalline silicon ingot furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205175504U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105424135A (en) * | 2015-12-08 | 2016-03-23 | 山西中电科新能源技术有限公司 | Device for measuring height of seed crystal in high-temperature liquid silicon in polycrystalline silicon ingot furnace |
| CN106012007A (en) * | 2016-07-22 | 2016-10-12 | 常州天合光能有限公司 | Method and device for growing crystalline silicone by aid of forced convection |
-
2015
- 2015-12-08 CN CN201521011714.9U patent/CN205175504U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105424135A (en) * | 2015-12-08 | 2016-03-23 | 山西中电科新能源技术有限公司 | Device for measuring height of seed crystal in high-temperature liquid silicon in polycrystalline silicon ingot furnace |
| CN106012007A (en) * | 2016-07-22 | 2016-10-12 | 常州天合光能有限公司 | Method and device for growing crystalline silicone by aid of forced convection |
| CN106012007B (en) * | 2016-07-22 | 2018-03-13 | 天合光能股份有限公司 | A kind of method and its device of forced convertion growth crystalline silicon |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106643631B (en) | A kind of high-supported formwork deformation monitoring method for early warning | |
| CN205175504U (en) | Measurement device for seed crystal height in liquid silicon of high temperature in polycrystalline silicon ingot furnace | |
| CN205910917U (en) | Acceleration of gravity measuring device | |
| CN105424135A (en) | Device for measuring height of seed crystal in high-temperature liquid silicon in polycrystalline silicon ingot furnace | |
| CN203858181U (en) | Novel liquid surface tension coefficient tester | |
| CN107144595B (en) | Cast aluminum alloy thermal analysis sampling device with reusable thermocouple and sampling cup | |
| CN212721220U (en) | Device for measuring thickness of molten iron slag through buoyancy change | |
| CN105300480A (en) | Device and method for liquid level height measurement of continuous casting tundish | |
| CN211059646U (en) | Wind speed tester support frame | |
| CN103668449B (en) | A kind of Solid-liquid interface determination device for silicon ingot furnace | |
| CN207703397U (en) | A kind of calibration holder of static torque sensor | |
| CN201837333U (en) | Suspended vertical displacement measuring device | |
| CN202083458U (en) | Testing device for temperature characteristics of multiple weighing sensors | |
| CN203382851U (en) | Testing device for melting thickness of seed crystals of pseudo-single crystal ingot furnace | |
| CN205893456U (en) | Single crystal growing furnace silicon solution liquid surface position detecting device and adjustment system | |
| CN206073869U (en) | Crucible bottom thickness detection means | |
| CN202562656U (en) | Thermocouple calibration device | |
| CN105780111B (en) | Polycrystalline silicon ingot casting furnace superintendent crystalline substance speed self-operated measuring unit | |
| CN212620436U (en) | Engineering supervision is with detecting instrument | |
| CN205262405U (en) | Tree height measuring device | |
| CN104294357B (en) | A kind of polycrystalline cast ingot seed crystal fusing control method and polycrystalline silicon ingot or purifying furnace | |
| CN203807592U (en) | Growth measurement device for ingot polysilicon crystals | |
| CN202329753U (en) | Device for measuring height of aluminum liquid | |
| CN207877928U (en) | A kind of crystal height measuring device of polycrystalline silicon ingot or purifying furnace | |
| CN102346067A (en) | System for automatically testing temperature performance of weighing sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |