CN205146262U - Little hybrid chip of high flux based on exchange electric heat - Google Patents
Little hybrid chip of high flux based on exchange electric heat Download PDFInfo
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- CN205146262U CN205146262U CN201520988561.7U CN201520988561U CN205146262U CN 205146262 U CN205146262 U CN 205146262U CN 201520988561 U CN201520988561 U CN 201520988561U CN 205146262 U CN205146262 U CN 205146262U
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Abstract
The utility model provides a little hybrid chip of high flux based on exchange electric heat, it relates to little hybrid chip. The utility model provides a current little blender can produce certain deviation when the solution conductivity is too big, the fluid to on the whole passageway height that just can not be fine carries out the problem of homogeneous mixing. The chip: the glass substrate surface is equipped with four three -dimensional electrode of group and ITO electrode lead, the lower surface of PDMS cover plate is equipped with particle reaction runner, and the both ends of particle reaction runner are equipped with three group's runners, first runner and second runner are equipped with the entry groove respectively, the third runner be equipped with the export through -hole, glass basement and PDMS cover plate lower surface are sealed relatively, and just the one end of the three -dimensional electrode of four groups are laminated with the both sides of particle reaction runner mutually, and the other end is laminated with ITO electrode lead mutually.
Description
Technical field
The utility model relates to microring array chip.
Background technology
Micro-fluidic chip (microfludicchip) refers to integrated for the basic operation unit such as sample preparation, reaction, separation, detection involved in the fields such as biological and chemical or be substantially integrated on the chip of a piece several square centimeters (even less), network is formed by microchannel, automatically analysis overall process is completed, developed into the research field that of multi-crossed disciplines (machinery, chemistry, biology, medical science, hydrodynamics etc.) extremely has application prospect, it has advantage in the quick context of detection of disease.Or in virus or the process that quick and precisely detects of germ, how the fluid that allows rapidly and efficiently mixes, analyze tool be of great significance carrying out biological and chemical on micro-fluidic chip.
Have multiple to the method that microfluid mixes at present, comprise active and passive type micro-mixer.What wherein Application comparison was many is electrodynamometer type micro-mixer, utilizes extra electric field to change electromotive force, and then the direction of motion of alter and speed, accelerating fluid mixed flow.In interchange electrokinetic phenomenon, AC Electric Heater not only can overcome and exchanges electric osmose and be only suitable for handling the limitation of low conductivity solutions, but also can overcome the shortcoming that dielectrophoresis is not suitable for handling sub-micron grade particle.But carry out in the research process of micro-mixer based on AC Electric Heater mechanism, researchers mainly carry out design and the optimization of micro-mixer based on the linear model of AC Electric Heater, can produce certain deviation when electrical conductivity of solution is excessive.In addition, micro-mixer also mainly have employed plane electrode, well can not carry out Homogeneous phase mixing to the fluid on whole channel height.
Utility model content
The utility model will solve existing micro-mixer can produce certain deviation when electrical conductivity of solution is excessive, and mainly have employed plane electrode, well can not carry out mixed uniformly problem to the fluid on whole channel height, and provide a kind of high flux microring array chip based on AC Electric Heater.
Based on a high flux microring array chip for AC Electric Heater, the high flux microring array chip based on AC Electric Heater is made up of substrate of glass and PDMS cover plate;
Described glass basic surface is provided with first group of three-diemsnional electrode, second group of three-diemsnional electrode, the 3rd group of three-diemsnional electrode, the 4th group of three-diemsnional electrode and ITO electrode lead-in wire;
Described ITO electrode lead-in wire is retained after being corroded by the ITO conducting film of glass basic surface and is obtained; The thickness of first group of described three-diemsnional electrode, second group of three-diemsnional electrode, the 3rd group of three-diemsnional electrode, the 4th group of three-diemsnional electrode is 76 μm; The thickness of described ITO electrode lead-in wire is 200nm;
The lower surface of described PDMS cover plate is provided with particle reaction runner, first flow, the second runner, the 3rd runner, the first inlet slot and the second inlet slot, the arrival end of particle reaction runner is connected with the port of export of first flow and the port of export of the second runner respectively, and the port of export of particle reaction runner is connected with the arrival end of the 3rd runner; And the arrival end of first flow is provided with the first inlet slot, the arrival end of the second runner is provided with the second inlet slot, and the port of export of the 3rd runner is provided with the outlet through hole running through PDMS cover plate;
The center of the first described inlet slot is provided with the first round entrance through hole running through PDMS cover plate; The center of the second described inlet slot is provided with the second round entrance through hole running through PDMS cover plate;
And PDMS cover plate lower surface is provided with and first of glass basic surface group of three-diemsnional electrode, second group of three-diemsnional electrode, the 3rd group of three-diemsnional electrode and the 4th group of groove that three-diemsnional electrode is corresponding;
The thickness of described PDMS cover plate is 5mm ~ 7mm; The described dark H of particle reaction runner is 76 μm, and long L is 3500 μm, and wide W is 400 μm; First flow is 76 μm deeply, and long is 1.5cm, and arrival end is wide is 3mm, and the port of export is wide is 200 μm; Second runner is 76 μm deeply, and long is 1.5cm, and arrival end is wide is 3mm, and the port of export is wide is 200 μm; 3rd runner is 76 μm deeply, and long is 1.2cm, and arrival end is wide is 400 μm, and the port of export is wide is 3mm; First entrance groove depth is 76 μm; Second entrance groove depth is 76 μm;
Substrate of glass is provided with side and the PDMS cover plate lower surface opposing seal of electrode, and one end of one end of first group of three-diemsnional electrode and the 3rd group of three-diemsnional electrode all fits with the side of particle reaction runner, one end of one end of second group of three-diemsnional electrode and the 4th group of three-diemsnional electrode all fits with the opposite side of particle reaction runner; The horizontal range dj1 of first group of three-diemsnional electrode and second group of three-diemsnional electrode is 125 μm; The horizontal range pj of second group of three-diemsnional electrode and the 3rd group of three-diemsnional electrode is 200 μm; The horizontal range dj2 of the 3rd group of three-diemsnional electrode and the 4th group of three-diemsnional electrode is 125 μm; The other end of first group of described three-diemsnional electrode, second group of three-diemsnional electrode, the 3rd group of three-diemsnional electrode and the 4th group of three-diemsnional electrode all goes between with ITO electrode and fits;
First group of described three-diemsnional electrode is made up of the first three-diemsnional electrode and the second three-diemsnional electrode; Horizontal range d3 between first three-diemsnional electrode and the second three-diemsnional electrode is 200 μm; The wide d1 in one end that the first described three-diemsnional electrode and particle reaction runner are fitted is 225 μm; The wide d2 in one end that gained second three-diemsnional electrode and particle reaction runner are fitted is 200 μm;
Second group of described three-diemsnional electrode, the 3rd group of three-diemsnional electrode are identical with first group of three-diemsnional electrode with the structure of the 4th group of three-diemsnional electrode.
Advantage of the present utility model: the utility model utilizes the multiple key structural parameters of AC Electric Heater strong-coupling model to microring array chip to be optimized emulation.Microring array chip based on three-diemsnional electrode can realize the high flux mixing of high-conductivity solution.
Accompanying drawing explanation
Fig. 1 is the top view of a kind of high flux microring array chip based on AC Electric Heater of the utility model;
Fig. 2 is Figure 1A portion enlarged drawing.
Detailed description of the invention
Detailed description of the invention one: composition graphs 1 and Fig. 2, present embodiment is a kind of high flux microring array chip based on AC Electric Heater, and the high flux microring array chip based on AC Electric Heater is made up of substrate of glass 1 and PDMS cover plate 2;
Described substrate of glass 1 surface is provided with first group of three-diemsnional electrode 4-1, second group of three-diemsnional electrode 4-2, the 3rd group of three-diemsnional electrode 4-3, the 4th group of three-diemsnional electrode 4-4 and ITO electrode lead-in wire 3;
Described ITO electrode lead-in wire 3 is retained after being corroded by the ITO conducting film on substrate of glass 1 surface and is obtained; The thickness of first group of described three-diemsnional electrode 4-1, second group of three-diemsnional electrode 4-2, the 3rd group of three-diemsnional electrode 4-3, the 4th group of three-diemsnional electrode 4-4 is 76 μm; The thickness of described ITO electrode lead-in wire 3 is 200nm;
The lower surface of described PDMS cover plate 2 is provided with particle reaction runner 5, first flow 10, second runner 11, the 3rd runner 9, first inlet slot 12 and the second inlet slot 13, the arrival end of particle reaction runner 5 is connected with the port of export of first flow 10 and the port of export of the second runner 11 respectively, and the port of export of particle reaction runner 5 is connected with the arrival end of the 3rd runner 9; And the port of export that the arrival end that the arrival end of first flow 10 is provided with the first inlet slot 12, second runner 11 is provided with the second inlet slot the 13, three runner 9 is provided with the outlet through hole 8 running through PDMS cover plate 2;
The center of the first described inlet slot 12 is provided with the first round entrance through hole 6 running through PDMS cover plate 2; The center of the second described inlet slot 13 is provided with the second round entrance through hole 7 running through PDMS cover plate 2;
And PDMS cover plate 2 lower surface is provided with and first group of three-diemsnional electrode 4-1 on substrate of glass 1 surface, second group of three-diemsnional electrode 4-2, the 3rd group of three-diemsnional electrode 4-3 and the 4th group groove that three-diemsnional electrode 4-4 is corresponding;
The thickness of described PDMS cover plate 2 is 5mm ~ 7mm; The dark H of described particle reaction runner 5 is 76 μm, and long L is 3500 μm, and wide W is 400 μm; First flow 10 is 76 μm deeply, and long is 1.5cm, and arrival end is wide is 3mm, and the port of export is wide is 200 μm; Second runner 11 is 76 μm deeply, and long is 1.5cm, and arrival end is wide is 3mm, and the port of export is wide is 200 μm; 3rd runner 9 is 76 μm deeply, and long is 1.2cm, and arrival end is wide is 400 μm, and the port of export is wide is 3mm; First inlet slot 12 is 76 μm deeply; Second inlet slot 13 is 76 μm deeply;
Substrate of glass 1 is provided with side and the PDMS cover plate 2 lower surface opposing seal of electrode, and one end of one end of first group of three-diemsnional electrode 4-1 and the 3rd group of three-diemsnional electrode 4-3 all fits with the side of particle reaction runner 5, one end of one end of second group of three-diemsnional electrode 4-2 and the 4th group of three-diemsnional electrode 4-4 all fits with the opposite side of particle reaction runner 5; The horizontal range dj1 of first group of three-diemsnional electrode 4-1 and second group of three-diemsnional electrode 4-2 is 125 μm; The horizontal range pj of second group of three-diemsnional electrode 4-2 and the 3rd group three-diemsnional electrode 4-3 is 200 μm; The horizontal range dj2 of the 3rd group of three-diemsnional electrode 4-3 and the 4th group three-diemsnional electrode 4-4 is 125 μm; The other end of first group of described three-diemsnional electrode 4-1, second group of three-diemsnional electrode 4-2, the 3rd group of three-diemsnional electrode 4-3 and the 4th group three-diemsnional electrode 4-4 all goes between with ITO electrode and 3 to fit;
First group of described three-diemsnional electrode 4-1 is made up of the first three-diemsnional electrode 4-1-1 and the second three-diemsnional electrode 4-1-2; Horizontal range d3 between first three-diemsnional electrode 4-1-1 and the second three-diemsnional electrode 4-1-2 is 200 μm; The wide d1 in one end that the first described three-diemsnional electrode 4-1-1 and particle reaction runner 5 are fitted is 225 μm; The wide d2 in one end that gained second three-diemsnional electrode 4-1-2 and particle reaction runner 5 are fitted is 200 μm;
Second group of described three-diemsnional electrode 4-2, the 3rd group of three-diemsnional electrode 4-3 are identical with first group of three-diemsnional electrode 4-1 with the structure of the 4th group of three-diemsnional electrode 4-4.
The beneficial effect of present embodiment is: utilize the multiple key structural parameters of AC Electric Heater strong-coupling model to microring array chip to be optimized emulation.Microring array chip based on three-diemsnional electrode can realize the high flux mixing of high-conductivity solution.
Detailed description of the invention two: the difference of present embodiment and detailed description of the invention one is: the angle between first flow 10 and the second runner 11 is 60 °.Other is identical with detailed description of the invention one.
Detailed description of the invention three: the difference of one of present embodiment and detailed description of the invention one or two is: the diameter of the first round entrance through hole 6 is 1mm; The diameter of the second round entrance through hole 7 is 1mm.Other is identical with detailed description of the invention one or two.
Claims (3)
1., based on a high flux microring array chip for AC Electric Heater, it is characterized in that the high flux microring array chip based on AC Electric Heater is made up of substrate of glass (1) and PDMS cover plate (2);
Described substrate of glass (1) surface is provided with first group of three-diemsnional electrode (4-1), second group of three-diemsnional electrode (4-2), the 3rd group of three-diemsnional electrode (4-3), the 4th group of three-diemsnional electrode (4-4) and ITO electrode lead-in wire (3);
Described ITO electrode lead-in wire (3) is retained after being corroded by the ITO conducting film on substrate of glass (1) surface and is obtained; The thickness of first group of described three-diemsnional electrode (4-1), second group of three-diemsnional electrode (4-2), the 3rd group of three-diemsnional electrode (4-3), the 4th group of three-diemsnional electrode (4-4) is 76 μm; The thickness of described ITO electrode lead-in wire (3) is 200nm;
The lower surface of described PDMS cover plate (2) is provided with particle reaction runner (5), first flow (10), the second runner (11), the 3rd runner (9), the first inlet slot (12) and the second inlet slot (13), the arrival end of particle reaction runner (5) is connected with the port of export of first flow (10) and the port of export of the second runner (11) respectively, and the port of export of particle reaction runner (5) is connected with the arrival end of the 3rd runner (9); And the arrival end of first flow (10) is provided with the first inlet slot (12), the arrival end of the second runner (11) is provided with the second inlet slot (13), and the port of export of the 3rd runner (9) is provided with the outlet through hole (8) running through PDMS cover plate (2);
The center of described the first inlet slot (12) is provided with the first round entrance through hole (6) running through PDMS cover plate (2); The center of described the second inlet slot (13) is provided with the second round entrance through hole (7) running through PDMS cover plate (2);
And PDMS cover plate (2) lower surface is provided with and first group of three-diemsnional electrode (4-1) on substrate of glass (1) surface, groove that second group of three-diemsnional electrode (4-2), the 3rd group of three-diemsnional electrode (4-3) and the 4th group of three-diemsnional electrode (4-4) are corresponding;
The thickness of described PDMS cover plate (2) is 5mm ~ 7mm; The dark H of described particle reaction runner (5) is 76 μm, and long L is 3500 μm, and wide W is 400 μm; First flow (10) is 76 μm deeply, and long is 1.5cm, and arrival end is wide is 3mm, and the port of export is wide is 200 μm; Second runner (11) is 76 μm deeply, and long is 1.5cm, and arrival end is wide is 3mm, and the port of export is wide is 200 μm; 3rd runner (9) is 76 μm deeply, and long is 1.2cm, and arrival end is wide is 400 μm, and the port of export is wide is 3mm; First inlet slot (12) is 76 μm deeply; Second inlet slot (13) is 76 μm deeply;
Substrate of glass (1) is provided with side and PDMS cover plate (2) the lower surface opposing seal of electrode, and one end of one end of first group of three-diemsnional electrode (4-1) and the 3rd group of three-diemsnional electrode (4-3) all fits with the side of particle reaction runner (5), one end of one end of second group of three-diemsnional electrode (4-2) and the 4th group of three-diemsnional electrode (4-4) all fits with the opposite side of particle reaction runner (5); First group of three-diemsnional electrode (4-1) is 125 μm with the horizontal range dj1 of second group of three-diemsnional electrode (4-2); Second group of three-diemsnional electrode (4-2) is 200 μm with the horizontal range pj of the 3rd group of three-diemsnional electrode (4-3); 3rd group of three-diemsnional electrode (4-3) is 125 μm with the horizontal range dj2 of the 4th group of three-diemsnional electrode (4-4); The other end of first group of described three-diemsnional electrode (4-1), second group of three-diemsnional electrode (4-2), the 3rd group of three-diemsnional electrode (4-3) and the 4th group of three-diemsnional electrode (4-4) all go between with ITO electrode (3) fit;
First group of described three-diemsnional electrode (4-1) is made up of the first three-diemsnional electrode (4-1-1) and the second three-diemsnional electrode (4-1-2); Horizontal range d3 between first three-diemsnional electrode (4-1-1) and the second three-diemsnional electrode (4-1-2) is 200 μm; The wide d1 in one end that described the first three-diemsnional electrode (4-1-1) and particle reaction runner (5) are fitted is 225 μm; The wide d2 in one end that gained second three-diemsnional electrode (4-1-2) and particle reaction runner (5) are fitted is 200 μm;
Second group of described three-diemsnional electrode (4-2), the 3rd group of three-diemsnional electrode (4-3) are identical with first group of three-diemsnional electrode (4-1) with the structure of the 4th group of three-diemsnional electrode (4-4).
2. a kind of high flux microring array chip based on AC Electric Heater according to claim 1, is characterized in that the angle between first flow (10) and the second runner (11) is 60 °.
3. a kind of high flux microring array chip based on AC Electric Heater according to claim 1, is characterized in that the diameter of the first round entrance through hole (6) is 1mm; The diameter of the second round entrance through hole (7) is 1mm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520988561.7U CN205146262U (en) | 2015-12-02 | 2015-12-02 | Little hybrid chip of high flux based on exchange electric heat |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520988561.7U CN205146262U (en) | 2015-12-02 | 2015-12-02 | Little hybrid chip of high flux based on exchange electric heat |
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| CN205146262U true CN205146262U (en) | 2016-04-13 |
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| CN201520988561.7U Expired - Fee Related CN205146262U (en) | 2015-12-02 | 2015-12-02 | Little hybrid chip of high flux based on exchange electric heat |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105536894A (en) * | 2015-12-02 | 2016-05-04 | 哈尔滨工业大学 | High flux micro mixed chip based on alternating current heat, preparation method and applications thereof |
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- 2015-12-02 CN CN201520988561.7U patent/CN205146262U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105536894A (en) * | 2015-12-02 | 2016-05-04 | 哈尔滨工业大学 | High flux micro mixed chip based on alternating current heat, preparation method and applications thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160413 Termination date: 20171202 |
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| CF01 | Termination of patent right due to non-payment of annual fee |