CN2051351U - High stabilization semi-conductor hydrogen sensitive transducer - Google Patents
High stabilization semi-conductor hydrogen sensitive transducer Download PDFInfo
- Publication number
- CN2051351U CN2051351U CN 89206041 CN89206041U CN2051351U CN 2051351 U CN2051351 U CN 2051351U CN 89206041 CN89206041 CN 89206041 CN 89206041 U CN89206041 U CN 89206041U CN 2051351 U CN2051351 U CN 2051351U
- Authority
- CN
- China
- Prior art keywords
- palladium
- mos device
- hydrogen
- high stable
- deck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Abstract
The utility model discloses a high stabilization semi-conductor hydrogen sensitive transducer which comprises a palladium grid M O S device. A hydrogen-sensitive palladium grid M O S device, a metal grid M O S device without the palladium layer which does not have the electrical response to the hydrogen, a temperature measuring diode and a heating resistor are integrated on a single silicon chip. The hydrogen detector which uses the high stabilization semi-conductor hydrogen sensitive transducer to assemble a compensating circuit has hydrogen detecting performance with high stability and reliability.
Description
The utility model relates to a kind of high stable semiconductor hydrogen sensor that comprises the palladium grate MOS device.
In the semiconductor hydrogen sensor of existing palladium grate MOS device, except that the palladium grate MOS device, also be provided with heating element and temperature element, in order to be connected with temperature-adjusting circuit, chip temperature is controlled in institute's restricted portion, thereby can avoids causing the change of palladium grate MOS device characteristic because of variation of ambient temperature.However, the flutter that non-ambient factors such as environmental factor except that temperature (as humidity, illumination or the like) and device self are aging cause is still uncontrolled, and the long-time stability of consequently existing palladium grid MOS hydrogen sensor still difficulty satisfies practical requirement.
In order to overcome the above-mentioned defective of prior art, the palladium grid MOS semiconductor hydrogen sensor of the utility model design comprises a hydrogen sensitive pd gate MOS device, one does not have the no palladium layer metal grate MOS device of electrical response, temperature element and heating element to hydrogen.Only exist hydrogen sensitivity whether marked difference between the performance of palladium grate MOS device and no palladium layer metal grate MOS device, in addition, the influence of other environment and non-ambient factor is between their characteristic and no significant difference, thereby complementary just the connection can obtain the quick output of pure hydrogen, thereby the hydrogen measuring ability of realization high stable as long as these two devices are in.
An embodiment of the utility model high stable semiconductor hydrogen sensor is integrated on the silicon palladium grate MOS device, no palladium layer metal grate MOS device, temperature element and heating element, and make temperature element with the diode of a diffusion (or ion injection) P-n knot, make heating element with diffusion (or ion injection) layer resistance.Figure one is the chip profile structural representation of this embodiment, and figure two is its schematic top plan view.Frame of broken lines A signal palladium grate MOS device among the figure one is at its source (S
A) and leak (D
A) between insulated gate (6) go up and directly to cover one deck titanium (5), covering one deck palladium (4) on the titanium.Frame of broken lines B illustrates no palladium layer metal grate MOS device, at its source (S
B) and leak (D
B) between insulated gate (6) on also directly cover one deck titanium (5), on this one deck titanium, directly cover one deck platinum (8), on platinum layer, cover one deck gold (7) again.D
TThe thermometric diode that signal is formed by diffusion (or ion injection) P-n knot, there is the layer of metal electrode on its surface, and the Ohmic contact that another electrode is formed by silicon substrate and metal (9) is drawn.The heating resistor that the R signal is made of diffusion (or ion injection) layer, its surface coverage has insulation course, and forms the metal level Ohmic contact in its two ends perforate.The palladium grate MOS device all communicates with silicon substrate with the source electrode of no palladium layer metal grate MOS device in this embodiment.Figure one illustrates eight of the electrode (18) of two ends (14,15) that whole semiconductor hydrogen sensor has two drain electrodes (16,11), two grids (12,17), heating resistor, thermometric diode and silicon substrates (13) etc. and draws and connect end.
The hydrogen gas detector that is assembled into compensating circuit with the utility model semiconductor hydrogen sensor has highly stable reliable hydrogen detection performance.
Description of drawings
Figure one is the silicon cross-sectional view of an embodiment of the utility model semiconductor hydrogen sensor, wherein 1 is silicon substrate, and 2 is insulation course, and 3 is metal level, 4 is the palladium layer, 5 is titanium layer, and 6 is insulated gate, and 7 is the gold layer, 8 is platinum layer, 9 is the Ohmic contact between metal level and the silicon substrate, and A is palladium grate MOS device district, S
AWith D
ABe respectively the source region and the drain region of palladium grate MOS device, B is no palladium layer metal gate MOS device region, S
BWith D
BBe respectively the source region and the drain region of no palladium layer metal grate MOS device, R is diffusion (or ion injection) layer heating resistor, D
TBe diffusion (or ion injection) P-n knot thermometric diode.
Figure two is the silicon surface vertical view of an embodiment of the utility model semiconductor hydrogen sensor, wherein 11 and 12 be respectively the drain electrode of palladium grate MOS device and grid and draw and connect end, 13 is the source electrode and shared drawing of silicon substrate of two MOS devices to connect end, 14 and 15 connect end for two of heating resistor draw, 16 and 17 are respectively the drain electrode of no palladium layer metal grate MOS device and grid draws and connects end, and 18 connect end for an electrode of thermometric diode draws.
Claims (6)
1, a kind of high stable semiconductor hydrogen sensor that comprises the palladium grate MOS device is characterized in that, it does not have the no palladium layer metal grate MOS device of electrical response, temperature element and heating element to be made up of a hydrogen sensitive pd gate MOS device, one to hydrogen.
2, according to the described high stable semiconductor of claim 1 hydrogen sensor, it is characterized by, described palladium grate MOS device, no palladium layer metal grate MOS device, thermometric and heating element are integrated on the silicon.
3, according to claim 1 and 2 described high stable semiconductor hydrogen sensors, it is characterized by, on the insulated gate of described palladium grate MOS device, directly cover one deck titanium, cover one deck palladium on the titanium.
4, according to claim 1 and 2 described high stable semiconductor hydrogen sensors, it is characterized by, on the insulated gate of described no palladium layer metal grate MOS device, directly cover one deck titanium, directly cover on the titanium and cover one deck gold on one deck platinum, the platinum.
5, according to claim 1 and 2 described high stable semiconductor hydrogen sensors, it is characterized by, described temperature element is exactly the thermometric diode that forms with diffusion (or ion injection) P-n knot, surface coverage layer of metal at diode is its electrode, and another layer metal that forms Ohmic contact with silicon substrate is its another electrode.
6, according to claim 1 and 2 described high stable semiconductor hydrogen sensors, it is characterized by, described heating element is the heating resistor of making of diffusion (or ion injection) layer, and heating resistor two end surfaces also have the metal level that forms Ohmic contact to connect end as drawing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 89206041 CN2051351U (en) | 1989-04-27 | 1989-04-27 | High stabilization semi-conductor hydrogen sensitive transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 89206041 CN2051351U (en) | 1989-04-27 | 1989-04-27 | High stabilization semi-conductor hydrogen sensitive transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2051351U true CN2051351U (en) | 1990-01-17 |
Family
ID=4863170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 89206041 Expired - Lifetime CN2051351U (en) | 1989-04-27 | 1989-04-27 | High stabilization semi-conductor hydrogen sensitive transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2051351U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2466287A1 (en) * | 2010-12-17 | 2012-06-20 | Adixen Vacuum Products | Device and method for detecting leaks using hydrogen as a tracer gas |
| CN101467030B (en) * | 2006-04-20 | 2013-02-27 | 应用纳米技术控股股份有限公司 | Hydrogen sensor |
-
1989
- 1989-04-27 CN CN 89206041 patent/CN2051351U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101467030B (en) * | 2006-04-20 | 2013-02-27 | 应用纳米技术控股股份有限公司 | Hydrogen sensor |
| EP2466287A1 (en) * | 2010-12-17 | 2012-06-20 | Adixen Vacuum Products | Device and method for detecting leaks using hydrogen as a tracer gas |
| FR2969287A1 (en) * | 2010-12-17 | 2012-06-22 | Alcatel Lucent | LEAK DETECTION DEVICE USING HYDROGEN AS TRACER GAS |
| CN102539082A (en) * | 2010-12-17 | 2012-07-04 | 阿迪森真空产品公司 | Device and method for detecting leaks using hydrogen as a tracer gas |
| US9176021B2 (en) | 2010-12-17 | 2015-11-03 | Adixen Vacuum Products | Leak detection device using hydrogen as tracer gas |
| CN102539082B (en) * | 2010-12-17 | 2016-08-10 | 阿迪克森真空产品公司 | Leakage detection apparatus and the method for search gas is made with hydrogen |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |