CN205124062U - Starting circuit , LED driver and LED drive circuit of chip - Google Patents
Starting circuit , LED driver and LED drive circuit of chip Download PDFInfo
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- CN205124062U CN205124062U CN201520858108.4U CN201520858108U CN205124062U CN 205124062 U CN205124062 U CN 205124062U CN 201520858108 U CN201520858108 U CN 201520858108U CN 205124062 U CN205124062 U CN 205124062U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
Abstract
The utility model provides a starting circuit, LED driver and LED drive circuit of chip, the starting circuit of chip includes: sampling module, master module, comparison module, feedback control module and start -up current control module, the sampling module is used for sampling in order to obtain sample voltage to external power source voltage to with its conveying to comparing the module, master module is used for providing reference voltage to with its conveying to comparing the module, relatively the module is used for receiving sample voltage and reference voltage to carry out the comparison, and convey the module to feedback control with the comparative result, the feedback control module is according to comparative result, output feedback control signal to control starts the current control module, when the external drive circuit provides the high voltage, charge through the mains voltage who starts current control pair of module chip, start current control module control chip's mains voltage's charging current simultaneously to the mains voltage who makes the chip is at starting phase by little to gradually changing greatly.
Description
Technical field
The utility model relates to electronic applications, particularly relates to a kind of start-up circuit of chip, LED driver and LED drive circuit.
Background technology
Namely LED (LightEmittingDiode) illumination is LED lighting, is a kind of semiconducting solid luminescent device.It utilizes solid semiconductor chip as luminescent material, releases superfluous energy in the semiconductors and cause photon, directly send the light of red, green, blue or white by charge carrier generation compound.LED illumination product utilizes LED as the produced ligthing paraphernalia of light source exactly.
At present, the normal LED drive circuit adopted is as shown in Figure 1 in the prior art, and input AC AC power 101, it is electrically connected to wherein two inputs of a rectifier bridge 103.Filtering is carried out by electric capacity C1, so produce a filtering direct voltage after the AC rectification that AC power 101 exports by rectifier bridge 103.Described direct voltage is a high voltage, and be electrically connected to the load LED of sustained diode 1, electric capacity C3 and series connection, the load LED of wherein said sustained diode 1, electric capacity C3 and series connection is in parallel, the anode of described fly-wheel diode is connected with the cathodic electricity of load LED, and the common connecting point of load LED and sustained diode 1 anode is electrically connected to an inductance L 1.In LED drive circuit as shown in Figure 1, resistance R1 and electric capacity C2 can produce a low-voltage DC, and then driving chip is started.
But, use the LED of above-mentioned traditional LED drive circuit, need external resistance R1 to start in typical case, and when the voltage of the VCC pin of LED drive chip is zero, starting instantaneously can be larger.If it is improper that external resistance R1 is arranged, then easily cause being formed the VCC pin of LED drive chip impacting, can there is superheating phenomenon in resistance R1 and LED drive chip simultaneously.
Utility model content
In order to solve the problem, a kind of start-up circuit of chip, LED driver and LED drive circuit are provided, it can when starting without the need to when external resistance, and make the change of supply voltage be gradually change from small to large, and then to avoid in prior art when the voltage of the VCC pin of LED drive chip is zero, the situation that starting resistor is larger instantaneously, can prevent LED drive chip superheating phenomenon simultaneously.
According to one side of the present utility model, provide a kind of LED driver, it comprises: comprising: a sampling module, a base modules, a comparison module, a feedback control module and a starting current control module; Described sampling module is used for sampling to obtain sampled voltage to the outer power voltage of the start-up circuit of chip, and described sampled voltage is sent to the first input end of described comparison module; Described base modules is used for providing a reference voltage, and described reference voltage is sent to the second input of described comparison module; Described comparison module for receiving described sampled voltage and described reference voltage, and compares described sampled voltage and described reference voltage, and comparative result is sent to described feedback control module; Described feedback control module, according to received comparative result, exports a feedback control signal, to control described starting current control module; When the external drive circuit of the start-up circuit of described chip provides a high voltage, by described starting current control module, described supply voltage is charged; Simultaneously the charging current of described starting current control module to described supply voltage controls, to make described charging current gradually change from large to small, and make described supply voltage startup stage correspondingly gradually change from small to large.
In an embodiment of the present utility model, when described feedback control signal is a low level signal, controls described starting current control module and normally work; And when described feedback control signal is a high level signal, controlling described starting current control module forbids work, reach a first built-in predetermined threshold value to make the dividing potential drop of described supply voltage.
In an embodiment of the present utility model, described starting current control module comprises one first current mirror; Described first current mirror comprises: one first field effect transistor, one second field effect transistor and one first resistance; The positive pole of described first resistance is electrically connected to the drain electrode of described external drive circuit and described first field effect transistor respectively, and the negative electricity of described first resistance is connected to the drain electrode of described second field effect transistor; The drain electrode of described second field effect transistor is electrically connected to described second fet gate, the grid of described second field effect transistor is electrically connected to the grid of described first field effect transistor, the source electrode of described second field effect transistor is electrically connected to the source electrode of described first field effect transistor, and is jointly connected to described supply voltage.
In an embodiment of the present utility model, described sampling module comprises: one second resistance and one the 3rd resistance; One end of described second resistance is electrically connected to described supply voltage, and the other end is electrically connected to one end of described 3rd resistance; The other end ground connection of described 3rd resistance; The common connecting point of described second resistance and described 3rd resistance is electrically connected to the first input end of described comparison module.
In an embodiment of the present utility model, described comparison module comprises: a comparator, and the first input end of described comparator is electrically connected to described sampling module; Second input of described comparator is electrically connected to described base modules.
In an embodiment of the present utility model, described feedback control module comprises: one the 3rd field effect transistor, the grid of described 3rd field effect transistor is electrically connected to the output of described comparison module, the drain electrode of described 3rd field effect transistor is electrically connected to the first resistance of described starting current control module and the common connecting point of the second field effect transistor, the source ground of described 3rd field effect transistor.
In an embodiment of the present utility model, the start-up circuit of described chip comprises further: a pincers die block, described pincers die block is less than described the maximum of starting current control module for the voltage making described external drive circuit and provide and bears voltage.
In an embodiment of the present utility model, described pincers die block comprises a high pressure JFET and manages, the drain electrode of described high pressure JFET pipe is electrically connected to described external drive circuit, the grounded-grid of described high pressure JFET pipe, and the source electrode of described high pressure JFET pipe is electrically connected to described starting current control module.
In an embodiment of the present utility model, the start-up circuit of described chip comprises further: voltage detection module, described voltage detection module is electrically connected to described supply voltage, for detecting the magnitude of voltage of described supply voltage and comparing with built-in second predetermined threshold value, when described supply voltage is less than the second predetermined threshold value, export a low level signal, when described supply voltage is more than or equal to the second predetermined threshold value, export a high level signal.
In an embodiment of the present utility model, described starting current control module comprises one first current mirror, one second current mirror, and described first current mirror comprises: one first field effect transistor, one second field effect transistor and one first resistance; The positive pole of described first resistance is electrically connected to the drain electrode of described external drive circuit and described first field effect transistor respectively, and the negative electricity of described first resistance is connected to the drain electrode of described second field effect transistor; The drain electrode of described second field effect transistor is electrically connected to described second fet gate, the grid of described second field effect transistor is electrically connected to the grid of described first field effect transistor, the source electrode of described second field effect transistor is electrically connected to the source electrode of described first field effect transistor, and is jointly connected to described supply voltage; Described second current mirror comprises: one the 4th field effect transistor, one the 5th field effect transistor and one the 4th resistance; The positive pole of described 4th resistance is electrically connected to the drain electrode of described external drive circuit, the drain electrode of described first field effect transistor, the positive pole of described first resistance and described 4th field effect transistor respectively, and the negative electricity of described 4th resistance is connected to the drain electrode of described 5th field effect transistor; The drain electrode of described 5th field effect transistor is electrically connected to the grid of described 5th field effect transistor, the grid of described 5th field effect transistor is electrically connected to the grid of described 4th field effect transistor, the source electrode of described 4th field effect transistor of source electrode electrical connection of described 5th field effect transistor, and be jointly connected to described supply voltage.
In an embodiment of the present utility model, described feedback control module comprises: one the 3rd field effect transistor, one the 6th field effect transistor, one the 7th field effect transistor, the drain electrode of described 6th field effect transistor is electrically connected to the drain electrode of described 3rd field effect transistor, the grid of described first field effect transistor, the grid of described second field effect transistor respectively, the grid of described 6th field effect transistor is electrically connected to the common connecting point of the grid of described 4th field effect transistor and the grid of described 5th field effect transistor, the source ground of described 6th field effect transistor; The drain electrode of described 7th field effect transistor is electrically connected to the grid of described 6th field effect transistor, and the grid of described 7th field effect transistor is electrically connected to described voltage detection module, the source ground of described 7th field effect transistor.
According to another aspect of the present utility model, provide a kind of LED driver, described LED driver comprises the start-up circuit of said chip.
According to another aspect of the present utility model, provide a kind of LED drive circuit, it comprises: a supply module, a rectification module, a filtration module, one drive circuit, a load blocks and adopt above-mentioned LED driver; Described supply module is electrically connected to described rectification module, and described supply module is used for providing an AC power; Described rectification module is electrically connected to described filtration module, and described rectification module is used for carrying out rectification to alternating current, to produce direct current; Described filtration module is electrically connected to described LED driver, and described filtration module is constant for making produced direct current; Described LED driver is electrically connected to drive circuit, and described LED driver for controlling the change in voltage of supply voltage, and is sent to drive circuit after producing a drive singal; Described drive circuit is electrically connected to described load blocks, and described drive circuit is used for providing constant current to described load blocks, normally works to drive described load blocks.
In an embodiment of the present utility model, described supply module comprises an AC power; Described rectification module comprises a rectifier bridge, and described AC power is electrically connected to two inputs of described rectifier bridge; Described filtration module comprises one first electric capacity, and the two ends of described first electric capacity are coupled to described rectifier bridge; The VCC pin of described LED driver is electrically connected to one end of one second electric capacity, and the other end of described second electric capacity is electrically connected to the other end of described first electric capacity; Described drive circuit comprises: a current regulator diode, one the 3rd electric capacity, one first inductance and one the 5th resistance; The negative electrode of described current regulator diode is electrically connected to one end of described first electric capacity and one end of described 3rd electric capacity respectively; The anode of described current regulator diode is electrically connected to the other end of described 3rd electric capacity and one end of described first inductance respectively; The other end of described first inductance is electrically connected to the DRAIN pin of described LED driver; One end of described 5th resistance is electrically connected to the CS pin of described LED driver, and the other end is electrically connected to the GND pin of described LED driver and the other end of the second electric capacity respectively; Described load blocks comprises the LED of multiple series connection, and described load blocks is coupled to the two ends of described 3rd electric capacity.
The utility model has the advantage of, by utilizing the interconnected relationship between LED driver internal electronic device (especially current mirror), can when starting without the need to when external resistance, and make supply voltage startup stage be gradually change from small to large, can not along with the fluctuation of input voltage acute variation.Further, avoid in prior art when the voltage of the VCC pin of LED driver is zero, the situation that starting resistor is larger instantaneously, LED driver superheating phenomenon can be prevented simultaneously.In addition, organizing current mirror by using more, making starting current smoothing and controlledization more.
Accompanying drawing explanation
Fig. 1 is the rough schematic view of LED drive circuit in prior art;
Fig. 2 is the module frame chart of the start-up circuit of the chip of the utility model one execution mode;
Fig. 3 is the schematic diagram of the LED driver of the utility model one execution mode;
Fig. 4 is the schematic diagram of the LED driver of another execution mode of the utility model;
Fig. 5 is the schematic diagram of the LED drive circuit adopting LED driver described in the utility model;
Fig. 6 is the flow chart of steps of the starting method of the utility model chip.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to the start-up circuit of the chip that the utility model provides, LED driver and LED drive circuit.
Shown in Figure 2, a kind of start-up circuit of chip is provided in an execution mode of the present utility model.This chip enable circuit is not limited to the use of LED driver, also goes for the startup of any existing chip.This chip enable circuit can be integrated in the inside of chip, realizes the self-starting of chip, also eliminates the components and parts of chip exterior simultaneously.And, eliminate other existing module and supply voltages of chip in Fig. 2.
The start-up circuit of described chip comprises: sampling module 210, base modules 220, comparison module 230, feedback control module 240 and a starting current control module 250.Wherein, described sampling module 210 is for the outer power voltage V of the start-up circuit to chip
cCcarry out sampling to obtain sampled voltage, and described sampled voltage is sent to the first input end of described comparison module 230; Described base modules 220 is for providing a reference voltage V
rEF, and by described reference voltage V
rEFbe sent to the second input of described comparison module 230; Described comparison module 230 is for receiving described sampled voltage and described reference voltage V
rEF, and to described sampled voltage and described reference voltage V
rEFcompare, and comparative result is sent to described feedback control module 240; Described feedback control module 240, according to received comparative result, exports a feedback control signal, to carry out switch control rule to described starting current control module 250; When the external drive circuit of the start-up circuit of described chip provides a high voltage, by described starting current control module 250 to described supply voltage V
cCcharge; Described starting current control module 250 is to described supply voltage V simultaneously
cCcharging current control, to make described charging current gradually change from large to small, and make described supply voltage V
cCstartup stage correspondingly gradually change from small to large.As charging voltage V
cCafter reaching predetermined target value, feedback control module 240 closes described starting current control module 250.
Optionally, the start-up circuit of described chip comprises further: a pincers die block 260, shown in Figure 3, described pincers die block 260 is less than described the maximum of starting current control module 250 for the voltage making external drive circuit provide and bears voltage.In the present embodiment, described pincers die block 260 is arranged at the inside of the start-up circuit of described chip, makes the start-up circuit integration degree of whole chip higher.Certainly, in other embodiments, described pincers die block 260 also can not be included among the start-up circuit of described chip.
Below with reference to Fig. 2 and Fig. 3, the modules of the start-up circuit of chip is illustrated further.
Wherein, described starting current control module 250 comprises one first current mirror (not marking in figure); Described first current mirror comprises: one first field effect transistor M1, one second field effect transistor M2 and one first resistance R1; The positive pole of described first resistance R1 is electrically connected to the drain electrode of external drive circuit and described first field effect transistor M1 respectively, and the negative electricity of described first resistance R1 is connected to the drain electrode of described second field effect transistor M2; The drain electrode of described second field effect transistor M2 is electrically connected to described second field effect transistor M2 grid, the grid of described second field effect transistor M2 is electrically connected to the grid of described first field effect transistor M1, the source electrode of described second field effect transistor M2 is electrically connected to the source electrode of described first field effect transistor M1, and is jointly connected to described supply voltage V
cC.
In the present embodiment, described first field effect transistor M1 and described second field effect transistor M2 is NMOS tube.Certainly, in other embodiments, can adopt the field effect transistor of other types, therefore, the first field effect transistor M1 of the present utility model and described second field effect transistor M2 is not limited to NMOS tube.Moreover in the present embodiment, the breadth length ratio of described first field effect transistor M1 and described second field effect transistor M2 is n:1.Because the breadth length ratio of described first field effect transistor M1 and described second field effect transistor M2 is n:1, and as mentioned below, the first resistance R1 and the second field effect transistor M2 forms current settings path, to limit high pressure JFET pipe to supply voltage V
cCcurrent settings, therefore, the first current mirror amplifies the electric current of the second field effect transistor M2, thus to supply voltage V
cCcharge.
Described sampling module 210 comprises: one second resistance R2 and the 3rd resistance R3; One end of described second resistance R2 is electrically connected to described supply voltage VCC, and the other end is electrically connected to one end of described 3rd resistance R3; The other end ground connection of described 3rd resistance R3; The common connecting point of described second resistance R2 and described 3rd resistance R3 is electrically connected to the first input end (in the present embodiment, it is in-phase end) of described comparison module 230.Wherein, the connected mode of the second resistance R2 and the 3rd resistance R3 plays dividing potential drop effect, that is, and described supply voltage V
cCthe positive pole being depressed into comparator COMP is divided by the second resistance R2 and the 3rd resistance R3.In other embodiments, technological means known in those skilled in the art also can be adopted supply voltage V
cCsample, and be sent to described comparison module 230.
Described base modules 220, for generation of reference voltage V
rEF, reference voltage V
rEFbe electrically connected to second input (in the present embodiment, it is end of oppisite phase) of comparator COMP.
Described comparison module 230 comprises: comparator COMP, and the first input end of described comparator COMP is electrically connected to described sampling module 210; Second input of described comparator COMP is electrically connected to described base modules 220.
Described feedback control module 240 comprises: one the 3rd field effect transistor M3, the grid of described 3rd field effect transistor M3 is electrically connected to the output of described comparison module 230, the drain electrode of described 3rd field effect transistor M3 is electrically connected to the first resistance R1 of described starting current control module 250 and the common connecting point of the second field effect transistor M2, the source ground of described 3rd field effect transistor M3.When described feedback control signal is a low level signal, controls described starting current control module 250 and normally work; And when described feedback control signal is a high level signal, controlling described starting current control module 250 forbids work, to make described supply voltage V
cCreach a first built-in predetermined threshold value.
Described pincers die block 260 comprises a high pressure JFET pipe J1, the drain electrode of described high pressure JFET pipe J1 can be electrically connected to external drive circuit by the start-up circuit of the DRAIN pin chip comprising the LED driver of the start-up circuit of described chip, the grounded-grid of described high pressure JFET pipe J1, the source electrode of described high pressure JFET pipe J1 is electrically connected to the positive pole of the first resistance R1 of described starting current control module 250, and wherein LED driver can illustrate hereinafter.
In the present embodiment, after the start-up circuit of described chip obtains a high voltage by above-mentioned DRAIN pin from external drive circuit, can to supply voltage V
cCcharge.Because high pressure JFET pipe J1 clamps down on ceiling voltage, therefore, the maximum setting the source voltage of JFET pipe can not exceed the maximum of described starting current control module 250 and bear voltage (namely can not be withstand voltage to substrate more than the highest drain electrode of the first field effect transistor M1 and the second field effect transistor M2).
First resistance R1 and the second field effect transistor M2 forms current settings path, limits described high pressure JFET pipe J1 to supply voltage V
cCcurrent settings.First current mirror of the second field effect transistor M2 and the first field effect transistor M1 formation 1:n ratio amplifies the electric current of the second field effect transistor M2, to supply voltage V
cCcharge.As initial supply voltage V
cCtime lower, output one low level signal of comparator COMP, the 3rd field effect transistor M3 cut-off, the first current mirror normally works, to give supply voltage V
cCcharging.Meanwhile, comparator COMP continues to compare supply voltage V
cCpartial pressure value and a reference voltage V
rEF.When partial pressure value reaches described reference voltage V
rEFtime (or being called the first predetermined threshold value), comparator COMP exports a high level signal, 3rd field effect transistor M3 transfers conducting state to from off state, so, the current potential of the grid of the grid of described second field effect transistor M2 and described first field effect transistor M1 is dragged down, thus turn off the second field effect transistor M2 and the first field effect transistor M1, like this, when described feedback control signal is a high level signal, the dividing potential drop of described supply voltage is made to reach a first built-in predetermined threshold value, now described supply voltage is
Wherein, described supply voltage V
cCit is the reference voltage V that base modules 220 produces
rEF, as the reference input voltage of comparator COMP.
Supply voltage V
cCcharging current equal
Wherein, V
joffthe pinch-off voltage of high pressure JFET pipe J1, V
tM2the open valve threshold voltage of the second field effect transistor M2, V
cCbe supply voltage, R1 is the resistance of the first resistance, and n is the ratio of the first current mirror.
As shown from the above formula, as supply voltage V
cCtime lower, described supply voltage V
cCcorresponding charging current value is larger.As supply voltage V
cCwhen being zero, supply voltage V
cCcorresponding charging current value is maximum.
On vertical, the current mirror of described starting current control module 250 is to described supply voltage V
cCcharging current control, to make described charging current gradually change from large to small, and make described supply voltage V
cCstartup stage correspondingly gradually change from small to large.In it is possible to make the LED driver of the start-up circuit comprising described chip when starting without when external resistance, and make supply voltage V
cCstartup stage be gradually change from small to large, can not along with the fluctuation of the input voltage after bridge rectifier acute variation.Further, avoid in prior art when the voltage of the VCC pin of LED driver is zero, the situation that starting resistor is larger instantaneously, prevents LED driver superheating phenomenon simultaneously.
See Fig. 4, in another execution mode of the present utility model, provide the start-up circuit of another kind of chip, it improves further and forms on the architecture basics of the start-up circuit of said chip.The start-up circuit of this chip comprises further: voltage detection module 370, and described voltage detection module 370 is electrically connected to described supply voltage V
cC, for detecting described supply voltage V
cCmagnitude of voltage and compare, as described supply voltage V with built-in second predetermined threshold value
cCwhen being less than the second predetermined threshold value, export a low level signal, as described supply voltage V
cCwhen being more than or equal to the second predetermined threshold value, export a high level signal.
In the present embodiment, described starting current control module can comprise one first current mirror (not shown) and one second current mirror (not shown), and described first current mirror comprises: one first field effect transistor M1, one second field effect transistor M2 and one first resistance R1; The positive pole of described first resistance R1 is electrically connected to the drain electrode of described external drive circuit and described first field effect transistor M1 respectively, and the negative electricity of described first resistance R1 is connected to the drain electrode of described second field effect transistor M2; The drain electrode of described second field effect transistor M2 is electrically connected to described second field effect transistor M2 grid, the grid of described second field effect transistor M2 is electrically connected to the grid of described first field effect transistor M1, the source electrode of described second field effect transistor M2 is electrically connected to the source electrode of described first field effect transistor M1, and is jointly connected to described supply voltage V
cC; Described second current mirror comprises: one the 4th resistance R4, one the 4th field effect transistor M4 and the 5th field effect transistor M5; The positive pole of described 4th resistance R4 is electrically connected to the drain electrode of external drive circuit, the drain electrode of described first field effect transistor M1, the positive pole of described first resistance R1 and described 4th field effect transistor M4 respectively, and the negative electricity of described 4th resistance R4 is connected to the drain electrode of described 5th field effect transistor M5; The drain electrode of described 5th field effect transistor M5 is electrically connected to the grid of described 5th field effect transistor M5, the grid of described 5th field effect transistor M5 is electrically connected to the grid of described 4th field effect transistor M4, the source electrode of described 5th field effect transistor M5 is electrically connected to the source electrode of described 4th field effect transistor, and is jointly connected to described supply voltage V
cC.
In the present embodiment, described feedback control module can comprise: one the 3rd field effect transistor M3, one the 6th field effect transistor M6 and the 7th field effect transistor M7: described 6th field effect transistor M6 drain electrode be electrically connected to the drain electrode of described 3rd field effect transistor M3, the grid of described first field effect transistor M1, the grid of described second field effect transistor M2 respectively, the grid of described 6th field effect transistor M6 is electrically connected to the common connecting point of the grid of described 4th field effect transistor M4 and the grid of described 5th field effect transistor M5, the source ground of described 6th field effect transistor M6; The drain electrode of described 7th field effect transistor M7 is electrically connected to the grid of described 6th field effect transistor M6, and the grid of described 7th field effect transistor M7 is electrically connected to described voltage detection module 370, the source ground of described 7th field effect transistor M7.Wherein, the electrical connection of the 3rd field effect transistor M 3 see the description of an above-mentioned execution mode, can not repeat them here.
In the present embodiment, described first field effect transistor M1, described second field effect transistor M2, described 4th field effect transistor M4 and described 5th field effect transistor M5 are NMOS tube.Certainly, in other embodiments, can adopt the field effect transistor of other types, therefore, the first field effect transistor M1 described in the utility model, described second field effect transistor M2, described 4th field effect transistor M4 and described 5th field effect transistor M5 are not limited to NMOS tube.Moreover in the present embodiment, the breadth length ratio of described first field effect transistor M1 and described second field effect transistor M2 is n:1; The breadth length ratio of described 4th field effect transistor M4 and described 5th field effect transistor M5 is n2:1, and wherein n2 is different from n; And, the current mirror that described second current mirror (comprising described 4th field effect transistor M4 and described 5th field effect transistor M5) is small area analysis.
Specifically, when the start-up circuit of described chip obtains a high voltage by the start-up circuit of the DRAIN pin chip comprising the LED driver of the start-up circuit of described chip from external drive circuit, can to supply voltage V
cCcharge.Because high pressure JFET pipe J1 clamps down on ceiling voltage, therefore, the ceiling voltage of setting can not exceed the maximum of described starting current control module 250 and bears voltage (namely can not be withstand voltage to substrate more than the highest drain electrode of the first field effect transistor M1, the second field effect transistor M2, the 4th field effect transistor M4, the 5th field effect transistor M5).The source electrode of high pressure JFET pipe J1 is electrically connected to two groups of current mirrors respectively, be respectively the first current mirror and the second current mirror, wherein said first current mirror also can be called as the first current path (M1, M2 and R1), and described second current mirror also can be called as the second current path (M4, M5 and R4).When initial LED driver starts, supply voltage V
cCbe zero, voltage detection module 370 is at supply voltage V
cCfor time low, acquiescence output one low level signal, so, the current potential of the grid of the 7th field effect transistor M7 is low, then the grid level of the 6th field effect transistor M6 is after exceeding switching threshold voltage, the 6th field effect transistor M6 conducting, makes the first field effect transistor M1 and the second field effect transistor M2 be in off state, like this, the first current mirror temporarily forbids work.Meanwhile, only use the second current mirror (comprising the 4th field effect transistor M4, the 5th field effect transistor M5) to supply voltage V
cCcharge.As supply voltage V
cCwhen progressively raising from small to large, described voltage detection module 370 detects described supply voltage V
cCwhen reaching the second predetermined threshold value, export a high level signal, so the current potential of the grid of the 7th field effect transistor M7 is high, then the current potential of the grid of the 6th field effect transistor M6 is dragged down, so the 6th field effect transistor M6 is in off state, then, the grid of the 4th field effect transistor M4 and the 5th field effect transistor M5 all turns off cut-off, and that is the second current path of the second current mirror turns off completely.After the 6th field effect transistor M6 turns off cut-off, the grid of the first field effect transistor M1 and the grid of the second field effect transistor M2 be not by drop-down path, thus the grid of the first resistance R1 to the grid of the first field effect transistor M1 and the second field effect transistor M2 charges.First resistance R1 and the second field effect transistor M2 forms current settings path, limits high pressure JFET pipe J1 to supply voltage V
cCcurrent settings.First current mirror of the second field effect transistor M2 and the first field effect transistor M1 formation 1:n ratio amplifies the electric current of the second field effect transistor M2, charges to supply voltage VCC pin.As initial supply voltage V
cCtime lower, output one low level signal of comparator COMP, the 3rd field effect transistor M3 is off state, and the first current mirror normally works, to give supply voltage V
cCcharging.Meanwhile, comparator COMP continues to compare supply voltage V
cCpartial pressure value and a reference voltage V
rEF.When partial pressure value reaches described reference voltage V
rEFtime (or being called the first predetermined threshold value), comparator COMP exports a high level signal, 3rd field effect transistor M3 transfers conducting state to from off state, so, the current potential of the grid of the grid of described second field effect transistor M2 and described first field effect transistor M1 is dragged down, thus turn off the second field effect transistor M2 and the first field effect transistor M1, like this, make supply voltage V
cCreach one first predetermined threshold value.
That is, when the second current mirror normally works, and when the first current mirror forbids work,
Supply voltage V
cCcharging current
When the first current mirror normally works, and when the second current mirror forbids work,
Supply voltage V
cCcharging current
Wherein, V
joffthe pinch-off voltage of high pressure JFET pipe J1, V
tM2the open valve threshold voltage of the second field effect transistor M2, V
tM5the open valve threshold voltage of the 5th field effect transistor M5, V
cCbe supply voltage, R1 refers to the resistance of the first resistance R1, and R4 refers to the resistance of the 4th resistance R4, and n is the ratio of the first current mirror, and n2 is the ratio of the second current mirror, and wherein n2 is different from n.Visible, as supply voltage V
cCtime different, different charging currents can be set.Described starting current control module 250 is not limited to comprise one group of current mirror or two groups of current mirrors, in other execution modes of the present utility model, also can comprise the current mirror of more than three groups, and coordinate multiple field effect transistor simultaneously, thus the self-start circuit of more segmentations can be realized.Like this, organizing current mirror by using more, making starting current smoothing and controlledization more.
See Fig. 5, the utility model provides a kind of LED driver 440, and described LED driver 440 comprises the start-up circuit of the described chip of said structure.Described LED driver 440 can control the change in voltage of supply voltage, and is sent to corresponding drive circuit after producing a drive singal.Described LED driver 440 comprises supply voltage VCC pin, DRAIN pin, CS pin and GND pin further.
Continue see Fig. 5, the utility model provides a kind of LED drive circuit, comprising: supply module 410, rectification module 420, filtration module 430, one drive circuit 450, load blocks 460 and above-mentioned LED driver 440; Wherein, described supply module 410 is electrically connected to described rectification module 420, and described supply module 410 is for providing an AC power; Described rectification module 420 is electrically connected to described filtration module 430, described rectification module 420 for carrying out rectification to alternating current, to produce direct current; Described filtration module 430 is electrically connected to described LED driver 440, and described filtration module 430 is constant for making produced direct current; Described LED driver 440 is electrically connected to external drive circuit, and described LED driver 440 is for controlling supply voltage V
cCchange in voltage, and be sent to drive circuit after producing a drive singal; Described drive circuit 450 is electrically connected to described load blocks 460, and described drive circuit 450, for providing constant current to described load blocks 460, normally works to drive described load blocks 460.
Specifically, described supply module 410 comprises an AC power 411; Described rectification module 420 comprises a rectifier bridge 421, and described AC power 411 is electrically connected to two inputs of described rectifier bridge 421; Described filtering mould 430 comprises one first electric capacity C1, and the two ends of described first electric capacity C1 are coupled to described rectifier bridge 421; The VCC pin of described LED driver 440 is electrically connected to one end of one second electric capacity C2, and the other end of described second electric capacity C2 is electrically connected to the other end of described first electric capacity C1; Described drive circuit 450 comprises: a current regulator diode D1, one the 3rd electric capacity C3, one first inductance L 1 and one the 5th resistance R5; The negative electrode of described current regulator diode D1 is electrically connected to one end of described first electric capacity C1 and one end of described 3rd electric capacity C3 respectively; The anode of described current regulator diode D1 is electrically connected to the other end of described 3rd electric capacity C3 and one end of described first inductance L 1 respectively; The other end of described first inductance L 1 is electrically connected to the DRAIN pin of described LED driver 440; One end of described 5th resistance R5 is electrically connected to the CS pin of described LED driver 440, and the other end is electrically connected to the GND pin of described LED driver 440 and the other end of the second electric capacity C2 respectively; Described load blocks 460 comprises the LED of multiple series connection, and described load blocks 460 is coupled to the two ends of described 3rd electric capacity C3.
Wherein, in the present embodiment, the LED driver 440 of said structure can be adopted, other also can be adopted to have the driving chip with described LED driver 440 identical function.As shown in Figure 5, the 5th resistance R5 arranges the resistance of the output current of LED driver, to arrange the electric current of load blocks 460, and then realizes providing constant current to drive to load blocks 460, the V shown in Fig. 5
cCfor the energization pins of LED driver 440.This pin obtains voltage by DRAIN pin in LED driver 440, and without the need to external resistance as shown in Figure 1.And, in the present embodiment, make supply voltage V
cCstartup stage be gradually change from small to large, can not along with the fluctuation of input voltage acute variation.Further, avoid in prior art when the voltage of the VCC pin of LED driver is zero, the situation that starting resistor is larger instantaneously, LED driver superheating phenomenon can be prevented simultaneously.
See Fig. 6, the utility model also provides a kind of starting method of chip, adopt the start-up circuit of above-mentioned chip, the starting method of described chip comprises the following steps: S610, the sampling module outer power voltage to the start-up circuit of chip samples to obtain sampled voltage, and described sampled voltage is sent to the first input end of described comparison module; S620, base modules provide a reference voltage, and described reference voltage is sent to the second input of described comparison module; S630, comparison module receive described sampled voltage and described reference voltage, and compare described sampled voltage and described reference voltage, and comparative result is sent to described feedback control module; S640, feedback control module, according to received comparative result, export a feedback control signal, to control described starting current control module; S650, when the external drive circuit of the start-up circuit of described chip provides a high voltage, by described starting current control module, described supply voltage to be charged; Simultaneously the charging current of described starting current control module to described supply voltage controls, to make described charging current gradually change from large to small, and make described supply voltage startup stage correspondingly gradually change from small to large.
Continue with reference to figure 6, and combination is referring to figs. 2 to Fig. 5, after the start-up circuit of described chip obtains a high voltage by above-mentioned DRAIN pin from external drive circuit, can to supply voltage V
cCcharge.Because high pressure JFET pipe J1 clamps down on ceiling voltage, therefore, the maximum setting the source voltage of JFET pipe can not exceed described the maximum of starting current control module 250 and bear voltage.First resistance R1 and the second field effect transistor M2 forms current settings path, limits described high pressure JFET pipe J1 to supply voltage V
cCcurrent settings.First current mirror of the second field effect transistor M2 and the first field effect transistor M1 formation 1:n ratio amplifies the electric current of the second field effect transistor M2, to supply voltage V
cCcharge.As initial supply voltage V
cCtime lower, output one low level signal of comparator COMP, the 3rd field effect transistor M3 cut-off, the first current mirror normally works, to give supply voltage V
cCcharging.Meanwhile, comparator COMP continues to compare supply voltage V
cCpartial pressure value and a reference voltage V
rEF.When partial pressure value reaches described reference voltage V
rEFtime (or being called the first predetermined threshold value), comparator COMP exports a high level signal, 3rd field effect transistor M3 transfers conducting state to from off state, so, the current potential of the grid of the grid of described second field effect transistor M2 and described first field effect transistor M1 is dragged down, thus turn off the second field effect transistor M2 and the first field effect transistor M1, like this, when described feedback control signal is a high level signal, the dividing potential drop of described supply voltage is made to reach a first built-in predetermined threshold value, now described supply voltage is
Wherein, described supply voltage V
cCit is the reference voltage V that base modules 220 produces
rEF, as the reference input voltage of comparator COMP.
Supply voltage V
cCcharging current equal
Wherein, V
joffthe pinch-off voltage of high pressure JFET pipe J1, V
tM2the open valve threshold voltage of the second field effect transistor M2, V
cCbe supply voltage, R1 is the resistance of the first resistance, and n is the ratio of the first current mirror.
As shown from the above formula, as supply voltage V
cCtime lower, described supply voltage V
cCcorresponding charging current value is larger.As supply voltage V
cCwhen being zero, supply voltage V
cCcorresponding charging current value is maximum.
On vertical, the current mirror of described starting current control module 250 is to described supply voltage V
cCcharging current control, to make described charging current gradually change from large to small, and make described supply voltage V
cCstartup stage correspondingly gradually change from small to large.In it is possible to make the LED driver of the start-up circuit comprising described chip when starting without when external resistance, and make supply voltage V
cCstartup stage be gradually change from small to large, can not along with the fluctuation of the input voltage after bridge rectifier acute variation.Further, avoid in prior art when the voltage of the VCC pin of LED driver is zero, the situation that starting resistor is larger instantaneously, prevents LED driver superheating phenomenon simultaneously.
In another execution mode of the present utility model, the starting method of described chip comprises further and detecting supply voltage, the magnitude of voltage of the supply voltage detected and the second predetermined threshold value are compared export a detection control signal to feedback control module, when described supply voltage is less than the second predetermined threshold value, export a low level signal, when described supply voltage is more than or equal to the second predetermined threshold value, export a high level signal.
And, comprise further in step S640: feedback control module, according to received comparative result and detection control signal, exports a feedback control signal, to control described starting current control module.
Specifically, in this embodiment, when the start-up circuit of described chip obtains a high voltage by the DRAIN pin comprising the LED driver of the start-up circuit of described chip from external drive circuit, can to supply voltage V
cCcharge.Because high pressure JFET pipe J1 clamps down on ceiling voltage, therefore, the ceiling voltage of setting can not exceed described the maximum of starting current control module 250 and bears voltage.The source electrode of high pressure JFET pipe J1 is electrically connected to two groups of current mirrors respectively, be respectively the first current mirror and the second current mirror, wherein said first current mirror also can be called as the first current path (M1, M2 and R1), and described second current mirror also can be called as the second current path (M4, M5 and R4).When initial LED driver starts, supply voltage V
cCbe zero, voltage detection module 370 is at supply voltage V
cCfor time low, acquiescence output one low level signal, so, the current potential of the grid of the 7th field effect transistor M7 is low, then the grid level of the 6th field effect transistor M6 is after exceeding switching threshold voltage, the 6th field effect transistor M6 conducting, makes the first field effect transistor M1 and the second field effect transistor M2 be in off state, like this, the first current mirror temporarily forbids work.Meanwhile, only use the second current mirror (comprising the 4th field effect transistor M4, the 5th field effect transistor M5) to supply voltage V
cCcharge.As supply voltage V
cCwhen progressively raising from small to large, described voltage detection module 370 detects described supply voltage V
cCwhen reaching the second predetermined threshold value, export a high level signal, so the current potential of the grid of the 7th field effect transistor M7 is high, then the current potential of the grid of the 6th field effect transistor M6 is dragged down, so the 6th field effect transistor M6 is in off state, then, the grid of the 4th field effect transistor M4 and the 5th field effect transistor M5 all turns off cut-off, and that is the second current path of the second current mirror turns off completely.After the 6th field effect transistor M6 turns off cut-off, the grid of the first field effect transistor M1 and the grid of the second field effect transistor M2 be not by drop-down path, thus the grid of the first resistance R1 to the grid of the first field effect transistor M1 and the second field effect transistor M2 charges.First resistance R1 and the second field effect transistor M2 forms current settings path, limits high pressure JFET pipe J1 to supply voltage V
cCcurrent settings.First current mirror of the second field effect transistor M2 and the first field effect transistor M1 formation 1:n ratio amplifies the electric current of the second field effect transistor M2, charges to supply voltage VCC pin.As initial supply voltage V
cCtime lower, output one low level signal of comparator COMP, the 3rd field effect transistor M3 is off state, and the first current mirror normally works, to give supply voltage V
cCcharging.Meanwhile, comparator COMP continues to compare supply voltage V
cCpartial pressure value and a reference voltage V
rEF.When partial pressure value reaches described reference voltage V
rEFtime (or being called the first predetermined threshold value), comparator COMP exports a high level signal, 3rd field effect transistor M3 transfers conducting state to from off state, so, the current potential of the grid of the grid of described second field effect transistor M2 and described first field effect transistor M1 is dragged down, thus turn off the second field effect transistor M2 and the first field effect transistor M1, like this, make supply voltage V
cCreach one first predetermined threshold value.
That is, when the second current mirror normally works, and when the first current mirror forbids work,
Supply voltage V
cCcharging current
When the first current mirror normally works, and when the second current mirror forbids work,
Supply voltage V
cCcharging current
Wherein, V
joffthe pinch-off voltage of high pressure JFET pipe J1, V
tM2the open valve threshold voltage of the second field effect transistor M2, V
tM5the open valve threshold voltage of the 5th field effect transistor M5, V
cCbe supply voltage, R1 refers to the resistance of the first resistance R1, and R4 refers to the resistance of the 4th resistance R4, and n is the ratio of the first current mirror, and n2 is the ratio of the second current mirror, and wherein n2 is different from n.Visible, as supply voltage V
cCtime different, different charging currents can be set.Described starting current control module 250 is not limited to comprise one group of current mirror or two groups of current mirrors, in other execution modes of the present utility model, also can comprise the current mirror of more than three groups, and coordinate multiple field effect transistor simultaneously, thus the self-start circuit of more segmentations can be realized.Like this, organizing current mirror by using more, making starting current smoothing and controlledization more.
The above is only preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (14)
1. a start-up circuit for chip, is characterized in that, comprising: a sampling module, a base modules, a comparison module, a feedback control module and a starting current control module;
Described sampling module is used for sampling to obtain sampled voltage to the outer power voltage of the start-up circuit of chip, and described sampled voltage is sent to the first input end of described comparison module;
Described base modules is used for providing a reference voltage, and described reference voltage is sent to the second input of described comparison module;
Described comparison module for receiving described sampled voltage and described reference voltage, and compares described sampled voltage and described reference voltage, and comparative result is sent to described feedback control module;
Described feedback control module, according to received comparative result, exports a feedback control signal, to control described starting current control module;
When the external drive circuit of the start-up circuit of described chip provides a high voltage, charged by the supply voltage of described starting current control module to described chip; Simultaneously the charging current of described starting current control module to the supply voltage of described chip controls, to make described charging current gradually change from large to small, and make the supply voltage of described chip startup stage correspondingly gradually change from small to large.
2. the start-up circuit of chip according to claim 1, is characterized in that, when described feedback control signal is a low level signal, controls described starting current control module and normally works; And when described feedback control signal is a high level signal, controlling described starting current control module forbids work, reach a first built-in predetermined threshold value to make the dividing potential drop of described supply voltage.
3. the start-up circuit of chip according to claim 1, is characterized in that, described starting current control module comprises one first current mirror; Described first current mirror comprises: one first field effect transistor, one second field effect transistor and one first resistance; The positive pole of described first resistance is electrically connected to the drain electrode of described external drive circuit and described first field effect transistor respectively, and the negative electricity of described first resistance is connected to the drain electrode of described second field effect transistor; The drain electrode of described second field effect transistor is electrically connected to described second fet gate, the grid of described second field effect transistor is electrically connected to the grid of described first field effect transistor, the source electrode of described second field effect transistor is electrically connected to the source electrode of described first field effect transistor, and is jointly connected to described supply voltage.
4. the start-up circuit of chip according to claim 1, is characterized in that, described sampling module comprises: one second resistance and one the 3rd resistance; One end of described second resistance is electrically connected to described supply voltage, and the other end is electrically connected to one end of described 3rd resistance; The other end ground connection of described 3rd resistance; The common connecting point of described second resistance and described 3rd resistance is electrically connected to the first input end of described comparison module.
5. the start-up circuit of chip according to claim 1, is characterized in that, described comparison module comprises: a comparator, and the first input end of described comparator is electrically connected to described sampling module; Second input of described comparator is electrically connected to described base modules.
6. the start-up circuit of chip according to claim 1, it is characterized in that, described feedback control module comprises: one the 3rd field effect transistor, the grid of described 3rd field effect transistor is electrically connected to the output of described comparison module, the drain electrode of described 3rd field effect transistor is electrically connected to the first resistance of described starting current control module and the common connecting point of the second field effect transistor, the source ground of described 3rd field effect transistor.
7. the start-up circuit of chip according to claim 1, it is characterized in that, the start-up circuit of described chip comprises further: a pincers die block, described pincers die block is less than described the maximum of starting current control module for the voltage making described external drive circuit and provide and bears voltage.
8. the start-up circuit of chip according to claim 7, it is characterized in that, described pincers die block comprises a high pressure JFET and manages, the drain electrode of described high pressure JFET pipe is electrically connected to described external drive circuit, the grounded-grid of described high pressure JFET pipe, the source electrode of described high pressure JFET pipe is electrically connected to described starting current control module.
9. the start-up circuit of chip according to claim 1, it is characterized in that, the start-up circuit of described chip comprises further: voltage detection module, described voltage detection module is electrically connected to described supply voltage, for detecting the magnitude of voltage of described supply voltage and comparing with built-in second predetermined threshold value, when described supply voltage is less than the second predetermined threshold value, export a low level signal, when described supply voltage is more than or equal to the second predetermined threshold value, export a high level signal.
10. the start-up circuit of chip according to claim 9, it is characterized in that, described starting current control module comprises one first current mirror and one second current mirror, and described first current mirror comprises: one first field effect transistor, one second field effect transistor and one first resistance; The positive pole of described first resistance is electrically connected to the drain electrode of described external drive circuit and described first field effect transistor respectively, and the negative electricity of described first resistance is connected to the drain electrode of described second field effect transistor; The drain electrode of described second field effect transistor is electrically connected to described second fet gate, the grid of described second field effect transistor is electrically connected to the grid of described first field effect transistor, the source electrode of described second field effect transistor is electrically connected to the source electrode of described first field effect transistor, and is jointly connected to described supply voltage; Described second current mirror comprises: one the 4th field effect transistor, one the 5th field effect transistor and one the 4th resistance; The positive pole of described 4th resistance is electrically connected to the drain electrode of described external drive circuit, the drain electrode of described first field effect transistor, the positive pole of described first resistance and described 4th field effect transistor respectively, and the negative electricity of described 4th resistance is connected to the drain electrode of described 5th field effect transistor; The drain electrode of described 5th field effect transistor is electrically connected to the grid of described 5th field effect transistor, the grid of described 5th field effect transistor is electrically connected to the grid of described 4th field effect transistor, the source electrode of described 4th field effect transistor of source electrode electrical connection of described 5th field effect transistor, and be jointly connected to described supply voltage.
The start-up circuit of 11. chips according to claim 10, it is characterized in that, described feedback control module comprises: one the 3rd field effect transistor, one the 6th field effect transistor and one the 7th field effect transistor, the drain electrode of described 6th field effect transistor is electrically connected to the drain electrode of described 3rd field effect transistor, the grid of described first field effect transistor, the grid of described second field effect transistor respectively, the grid of described 6th field effect transistor is electrically connected to the common connecting point of the grid of described 4th field effect transistor and the grid of described 5th field effect transistor, the source ground of described 6th field effect transistor; The drain electrode of described 7th field effect transistor is electrically connected to the grid of described 6th field effect transistor, and the grid of described 7th field effect transistor is electrically connected to described voltage detection module, the source ground of described 7th field effect transistor.
12. 1 kinds of LED drivers, is characterized in that, described LED driver comprises the start-up circuit of the described chip of any one in claim 1-11 item.
13. 1 kinds of LED drive circuits, is characterized in that, comprising: a supply module, a rectification module, a filtration module, adopt LED driver according to claim 12, drive circuit, a load blocks;
Described supply module is electrically connected to described rectification module, and described supply module is used for providing an AC power;
Described rectification module is electrically connected to described filtration module, and described rectification module is used for carrying out rectification to alternating current, to produce direct current;
Described filtration module is electrically connected to described LED driver, and described filtration module is constant for making produced direct current;
Described LED driver is electrically connected to described drive circuit, and described LED driver for controlling the change in voltage of supply voltage, and is sent to described drive circuit after producing a drive singal;
Described drive circuit is electrically connected to described load blocks, and described drive circuit is used for providing constant current to described load blocks, normally works to drive described load blocks.
14. LED drive circuits according to claim 13, is characterized in that, described supply module comprises an AC power; Described rectification module comprises a rectifier bridge, and described AC power is electrically connected to two inputs of described rectifier bridge; Described filtration module comprises one first electric capacity, and the two ends of described first electric capacity are coupled to described rectifier bridge; The VCC pin of described LED driver is electrically connected to one end of one second electric capacity, and the other end of described second electric capacity is electrically connected to the other end of described first electric capacity; Described drive circuit comprises: a current regulator diode, one the 3rd electric capacity, one first inductance and one the 5th resistance; The negative electrode of described current regulator diode is electrically connected to one end of described first electric capacity and one end of described 3rd electric capacity respectively; The anode of described current regulator diode is electrically connected to the other end of described 3rd electric capacity and one end of described first inductance respectively; The other end of described first inductance is electrically connected to the DRAIN pin of described LED driver; One end of described 5th resistance is electrically connected to the CS pin of described LED driver, and the other end is electrically connected to the GND pin of described LED driver and the other end of the second electric capacity respectively; Described load blocks comprises the LED of multiple series connection, and described load blocks is coupled to the two ends of described 3rd electric capacity.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520858108.4U CN205124062U (en) | 2015-10-30 | 2015-10-30 | Starting circuit , LED driver and LED drive circuit of chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520858108.4U CN205124062U (en) | 2015-10-30 | 2015-10-30 | Starting circuit , LED driver and LED drive circuit of chip |
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| CN205124062U true CN205124062U (en) | 2016-03-30 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105246207A (en) * | 2015-10-30 | 2016-01-13 | 上海晶丰明源半导体有限公司 | Starting circuit of chip, LED driver, LED drive circuit, and starting method of chip |
| CN106992678A (en) * | 2017-03-31 | 2017-07-28 | 上海晶丰明源半导体股份有限公司 | Power supply circuit, method of supplying power to, control chip and power-supply system |
| CN111176192A (en) * | 2020-01-20 | 2020-05-19 | 珠海亿智电子科技有限公司 | Flow control system, method and device for controlling chip starting flow |
| CN115117857A (en) * | 2022-08-30 | 2022-09-27 | 深圳市康源半导体有限公司 | Power supply management integrated circuit and power supply management system |
| CN116403517A (en) * | 2023-06-09 | 2023-07-07 | 中科(深圳)无线半导体有限公司 | Self-adaptive control method for power source of LED display system |
-
2015
- 2015-10-30 CN CN201520858108.4U patent/CN205124062U/en not_active Withdrawn - After Issue
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105246207A (en) * | 2015-10-30 | 2016-01-13 | 上海晶丰明源半导体有限公司 | Starting circuit of chip, LED driver, LED drive circuit, and starting method of chip |
| CN105246207B (en) * | 2015-10-30 | 2018-03-20 | 上海晶丰明源半导体股份有限公司 | The start-up circuit of chip, LED driver, the startup method of LED drive circuit and chip |
| CN106992678A (en) * | 2017-03-31 | 2017-07-28 | 上海晶丰明源半导体股份有限公司 | Power supply circuit, method of supplying power to, control chip and power-supply system |
| CN111176192A (en) * | 2020-01-20 | 2020-05-19 | 珠海亿智电子科技有限公司 | Flow control system, method and device for controlling chip starting flow |
| CN111176192B (en) * | 2020-01-20 | 2023-05-16 | 珠海亿智电子科技有限公司 | Flow control system, method and device for controlling chip starting flow |
| CN115117857A (en) * | 2022-08-30 | 2022-09-27 | 深圳市康源半导体有限公司 | Power supply management integrated circuit and power supply management system |
| CN116403517A (en) * | 2023-06-09 | 2023-07-07 | 中科(深圳)无线半导体有限公司 | Self-adaptive control method for power source of LED display system |
| CN116403517B (en) * | 2023-06-09 | 2023-08-29 | 中科(深圳)无线半导体有限公司 | Self-adaptive control method for power source of LED display system |
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Address after: 5 room 504-511, room 2, Lane 666, Zhang Heng Road, Pudong New Area, China (Shanghai) free trade zone, Shanghai, China () Patentee after: Shanghai semiconducto Limited by Share Ltd Address before: 201204 Zhang Heng road Shanghai, Pudong New Area Zhangjiang hi tech Park Lane 666 No. 2 floor 504-511 room 5 Patentee before: Shanghai Bright Power Semiconductor Co.,Ltd. |
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Granted publication date: 20160330 Effective date of abandoning: 20180320 |
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