CN205122584U - Switching diode array - Google Patents
Switching diode array Download PDFInfo
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- CN205122584U CN205122584U CN201520409540.5U CN201520409540U CN205122584U CN 205122584 U CN205122584 U CN 205122584U CN 201520409540 U CN201520409540 U CN 201520409540U CN 205122584 U CN205122584 U CN 205122584U
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Abstract
The utility model relates to a switching diode array, including six lead wires, two switching diode chipsets, switching diode chip and plastic -sealed bodies, six lead wires have corresponding paster ji dao separately, the switching diode chipset is become one by two switching diode chip sets, the back of a switching diode chipset is the positive pole, and there are first negative pole and a second negative pole in the surface, the back of the 3rd switching diode chipset is the negative pole, and there are first anode and ultor in the surface, switching diode chipset and switching diode chip weld respectively on corresponding paster ji dao, and its surperficial polarity is respectively through bonding wire and corresponding paster base island welded connection, paster ji dao, switching diode chip and switching diode chipset are all encapsulated in the plastic -sealed body. The utility model has the advantages of integrate, production efficiency is high, and occupation space is little.
Description
Technical field
The utility model is specifically related to a kind of switching diode array, belongs to semiconductor electronic component technical field.
Background technology
Switching diode array described in the utility model is used to the device playing on-off action.Prior art breaker in middle diode array comprises three discrete switch modules, wherein two discrete switch modules are all be encapsulated in plastic-sealed body after switching diode chip-in series by two simple grains, and remaining a discrete switch module is be encapsulated in plastic-sealed body by the switching diode chip of simple grain., there is certain shortcoming in the switching diode array of this spline structure, be three discrete switch modules due to what comprise, on the one hand, in manufacturing process, short time consumption is long, and production efficiency is low, and it is high to prepare production cost; On the other hand, to be welded on electronic circuit board shared space larger for the switching diode array of this kind of structure.
Summary of the invention
The purpose of this utility model is: provide one not only integrated, production efficiency is high, and the switching diode array taking up room little, to overcome the deficiencies in the prior art.
In order to achieve the above object, the technical solution of the utility model is: a kind of switching diode array, comprises the first lead-in wire, the second lead-in wire, the 3rd lead-in wire, the 4th lead-in wire, the 5th lead-in wire, the 6th lead-in wire, the first switching diode chipset, second switch diode chip for backlight unit, the 3rd switching diode chipset and plastic-sealed body;
Described first lead-in wire, the second lead-in wire, the 3rd lead-in wire, the 4th lead-in wire, the 5th lead-in wire and the 6th lead-in wire have corresponding paster Ji Dao separately;
Described first switching diode chipset and the 3rd switching diode chipset are all integrated by two switching diode integrated chips, the back side of described first switching diode chipset is anode, and there are the first negative electrode and the second negative electrode in surface, the back side of described 3rd switching diode chipset is negative electrode, and there are the first anode and second plate in surface;
The anodic bonding of described first switching diode chipset is connected on the paster Ji Dao of the first lead-in wire, the paster Ji Dao that first negative electrode of the first switching diode chipset is gone between by bonding wire and the 4th is welded to connect, and the paster Ji Dao that the second negative electrode of the first switching diode chipset is gone between by bonding wire and the 5th is welded to connect;
The cathode weld at the described second switch diode chip for backlight unit back side is at the paster Ji Dao of the second lead-in wire, and the paster Ji Dao that the anode on surface is gone between by bonding wire and the 3rd is welded to connect;
The cathode weld of described 3rd switching diode chipset is on the paster Ji Dao of the 3rd lead-in wire, the paster Ji Dao that the first anode of the 3rd switching diode chipset is gone between by bonding wire and the 4th is welded to connect, and the paster Ji Dao that the second plate of the 3rd switching diode chipset is gone between by bonding wire and the 5th is welded to connect;
Described first lead-in wire, the second lead-in wire, the 3rd lead-in wire, the 4th lead-in wire, the 5th lead-in wire and the 6th lead-in wire corresponding paster Ji Dao separately, and the first switching diode chipset, second switch diode chip for backlight unit and the 3rd switching diode chipset are all encapsulated in plastic-sealed body.
In technique scheme, described first lead-in wire, the second lead-in wire, the 3rd lead-in wire, the 4th lead-in wire, the 5th lead-in wire and the 6th lead-in wire have corresponding bending section separately, and bending section to be positioned at plastic-sealed body outer and near the edge of plastic-sealed body.
In technique scheme, described first lead-in wire, the second lead-in wire and the 3rd lead-in wire are arranged side by side, and the second lead-in wire is between the first lead-in wire and the 3rd lead-in wire, described 4th lead-in wire, the 5th lead-in wire and the 6th lead-in wire are arranged side by side, and the first lead-in wire, the second lead-in wire and the 3rd lead-in wire stretch out direction go between with the 4th, the 5th go between and the 6th go between to stretch out direction contrary.
In technique scheme, described first lead-in wire, the second lead-in wire, the 3rd lead-in wire, the 4th lead-in wire, the 5th lead-in wire and the 6th lead-in wire separately corresponding paster Ji Dao are all square laminated structures.
The good effect that the utility model has is: after adopting switching diode array of the present utility model, because the first switching diode chipset and the 3rd switching diode chipset are all be integrated by the switching diode integrated chip of two simple grains, and the switching diode chip common anode of two simple grains of the first switching diode chip, the switching diode chip common cathode of two simple grains of the 3rd switching diode chipset, described first switching diode chipset, second switch diode chip for backlight unit and the 3rd switching diode chipset are welded to connect with the paster Ji Dao of respective lead respectively, and be encapsulated in plastic-sealed body, like this, just three discrete switch modules in prior art are integrated, on the one hand, in manufacturing process, consuming time short, production efficiency is high, and it is low to prepare production cost, on the other hand, to be welded on electronic circuit board shared space less for the switching diode array of this kind of structure, achieve the purpose of this utility model.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of embodiment of the utility model;
Fig. 2 is that schematic diagram is looked on a left side of Fig. 1;
Fig. 3 is that schematic diagram is looked on the right side of Fig. 2;
Fig. 4 is the circuit theory diagrams of switching diode array.
Embodiment
Below in conjunction with accompanying drawing and the embodiment that provides, the utility model is further described, but is not limited thereto.
As shown in Figure 1,2,3, 4, a kind of switching diode array, comprises the first lead-in wire 1, second lead-in wire the 2, the 3rd lead-in wire the 3, the 4th lead-in wire the 4, the 5th lead-in wire the 5, the 6th lead-in wire the 10, first switching diode chipset 6, second switch diode chip for backlight unit 7, the 3rd switching diode chipset 8 and plastic-sealed body 9;
Described first lead-in wire, the second lead-in wire the 2, the 3rd lead-in wire the 3, the 4th lead-in wire the 4, the 5th lead-in wire 5 and the 6th lead-in wire 10 have corresponding paster base island 1-1,2-1,3-1,4-1,5-1,10-1 separately;
Described first switching diode chipset 6 and the 3rd switching diode chipset 8 are all be integrated by the switching diode integrated chip of two simple grains, the back side of described first switching diode chipset 6 is anodes, and there is the first negative electrode 6-1 and the second negative electrode 6-2 on surface, the back side of described 3rd switching diode chipset 8 is negative electrodes, and there is first anode 8-1 and second plate 8-2 on surface;
The anodic bonding of described first switching diode chipset 6 is connected on the paster base island 1-1 of the first lead-in wire 1, first negative electrode 6-1 of the first switching diode chipset 6 by bonding wire and the 4th go between 4 paster base island 4-1 be welded to connect, the second negative electrode 6-2 of the first switching diode chipset 6 by bonding wire and the 5th go between 5 paster base island 5-1 be welded to connect;
The cathode weld at described second switch diode chip for backlight unit 7 back side at the paster base island 2-1 of the second lead-in wire 2, the anode on surface by bonding wire and the 3rd go between 3 paster base island 3-1 be welded to connect;
The cathode weld of described 3rd switching diode chipset 8 is on the paster base island 3-1 of the 3rd lead-in wire 3, the first anode 8-1 of the 3rd switching diode chipset 8 by bonding wire and the 4th go between 4 paster base island 4-1 be welded to connect, the second plate 8-2 of the 3rd switching diode chipset 8 by bonding wire and the 5th go between 5 paster base island 5-1 be welded to connect;
Described first lead-in wire 1, second lead-in wire the 2, the 3rd lead-in wire the 3, the 4th lead-in wire the 4, the 5th lead-in wire 5 and the 6th lead-in wire 10 be corresponding paster base island 1-1,2-1,3-1,4-1,5-1,10-1 separately, and the first switching diode chipset 6, second switch diode chip for backlight unit 7 and the 3rd switching diode chipset 8 are all encapsulated in plastic-sealed body 9.
As shown in Figure 2,3, for the ease of welding, described first lead-in wire 1, second lead-in wire the 2, the 3rd lead-in wire the 3, the 4th lead-in wire the 4, the 5th lead-in wire 5 and the 6th lead-in wire 10 have corresponding bending section 1-2,2-2,3-2,4-2,5-2,10-2 separately, and bending section 1-2,2-2,3-2,4-2,5-2,10-2 to be positioned at plastic-sealed body 9 outer and near the edge of plastic-sealed body 9.
As shown in Figure 1, in order to make the utility model more reasonable, compact, described first lead-in wire 1, second lead-in wire 2 and the 3rd lead-in wire 3 are arranged side by side, and the second lead-in wire 2 is between the first lead-in wire 1 and the 3rd lead-in wire 3, described 4th lead-in wire the 4, the 5th lead-in wire 5 and the 6th lead-in wire 6 are arranged side by side, and the first lead-in wire 1, second lead-in wire 2 and the 3rd lead-in wire 3 stretch out direction and the 4th go between the 4, the 5th go between 5 and the 6th go between 10 to stretch out direction contrary.
As shown in Figure 1, for the ease of being connected with switching diode chipset and switching diode chip, described first lead-in wire 1, second lead-in wire the 2, the 3rd lead-in wire the 3, the 4th lead-in wire the 4, the 5th lead-in wire 5 and the 6th lead-in wire 10 separately corresponding paster base island 1-1,2-1,3-1,4-1,5-1,10-1 are all square laminated structures.
When the utility model uses, by wire bonds of the present utility model corresponding position on electronic circuit board, because three discrete switch modules in prior art are integrated by the utility model, therefore, not only production efficiency is high, and it is little to take up room.
The utility model pilot run shows, and its effect is good.
Claims (4)
1. a switching diode array, is characterized in that:
Comprise the first lead-in wire (1), the second lead-in wire (2), the 3rd lead-in wire (3), the 4th lead-in wire (4), the 5th lead-in wire (5), the 6th lead-in wire (10), the first switching diode chipset (6), second switch diode chip for backlight unit (7), the 3rd switching diode chipset (8) and plastic-sealed body (9);
Described first lead-in wire (1), the second lead-in wire (2), the 3rd lead-in wire (3), the 4th lead-in wire (4), the 5th lead-in wire (5) and the 6th lead-in wire (10) have corresponding paster Ji Dao (1-1,2-1,3-1,4-1,5-1,10-1) separately;
Described first switching diode chipset (6) and the 3rd switching diode chipset (8) are all be integrated by the switching diode integrated chip of two simple grains, the back side of described first switching diode chipset (6) is anode, and there are the first negative electrode (6-1) and the second negative electrode (6-2) in surface, the back side of described 3rd switching diode chipset (8) is negative electrode, and there are the first anode (8-1) and second plate (8-2) in surface;
The anodic bonding of described first switching diode chipset (6) is connected on the paster Ji Dao (1-1) of the first lead-in wire (1), first negative electrode (6-1) of the first switching diode chipset (6) is welded to connect by the go between paster Ji Dao (4-1) of (4) of bonding wire and the 4th, and second negative electrode (6-2) of the first switching diode chipset (6) is welded to connect by the go between paster Ji Dao (5-1) of (5) of bonding wire and the 5th;
The cathode weld at described second switch diode chip for backlight unit (7) back side is at the paster Ji Dao (2-1) of the second lead-in wire (2), and the anode on surface is welded to connect by the go between paster Ji Dao (3-1) of (3) of bonding wire and the 3rd;
The cathode weld of described 3rd switching diode chipset (8) is on the paster Ji Dao (3-1) of the 3rd lead-in wire (3), the first anode (8-1) of the 3rd switching diode chipset (8) is welded to connect by the go between paster Ji Dao (4-1) of (4) of bonding wire and the 4th, and the second plate (8-2) of the 3rd switching diode chipset (8) is welded to connect by the go between paster Ji Dao (5-1) of (5) of bonding wire and the 5th;
Described first lead-in wire (1), the second lead-in wire (2), the 3rd lead-in wire (3), the 4th lead-in wire (4), the 5th lead-in wire (5) and the 6th lead-in wire (10) corresponding paster Ji Dao (1-1,2-1,3-1,4-1,5-1,10-1) separately, and the first switching diode chipset (6), second switch diode chip for backlight unit (7) and the 3rd switching diode chipset (8) are all encapsulated in plastic-sealed body (9).
2. switching diode array according to claim 1, it is characterized in that: described first lead-in wire (1), the second lead-in wire (2), the 3rd lead-in wire (3), the 4th lead-in wire (4), the 5th lead-in wire (5) and the 6th lead-in wire (10) have corresponding bending section (1-2,2-2,3-2,4-2,5-2,10-2) separately, and bending section (1-2,2-2,3-2,4-2,5-2,10-2) is positioned at plastic-sealed body (9) and the edge of close plastic-sealed body (9) outward.
3. switching diode array according to claim 1 and 2, it is characterized in that: described first lead-in wire (1), the second lead-in wire (2) and the 3rd lead-in wire (3) are arranged side by side, and the second lead-in wire (2) is positioned between the first lead-in wire (1) and the 3rd lead-in wire (3), described 4th lead-in wire (4), the 5th lead-in wire (5) and the 6th lead-in wire (6) are arranged side by side, and the first lead-in wire (1), the second lead-in wire (2) and the 3rd go between (3) stretch out direction go between with the 4th (4), the 5th go between (5) and the 6th go between (10) to stretch out direction contrary.
4. switching diode array according to claim 1 and 2, is characterized in that: described first lead-in wire (1), the second lead-in wire (2), the 3rd lead-in wire (3), the 4th lead-in wire (4), the 5th lead-in wire (5) and the 6th lead-in wire (10) separately corresponding paster Ji Dao (1-1,2-1,3-1,4-1,5-1,10-1) are all square laminated structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520409540.5U CN205122584U (en) | 2015-06-15 | 2015-06-15 | Switching diode array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520409540.5U CN205122584U (en) | 2015-06-15 | 2015-06-15 | Switching diode array |
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| Publication Number | Publication Date |
|---|---|
| CN205122584U true CN205122584U (en) | 2016-03-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520409540.5U Active CN205122584U (en) | 2015-06-15 | 2015-06-15 | Switching diode array |
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| CN (1) | CN205122584U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021078280A1 (en) * | 2019-10-24 | 2021-04-29 | 华为技术有限公司 | Switching semiconductor device and manufacturing method therefor, and solid-state phase shifter |
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2015
- 2015-06-15 CN CN201520409540.5U patent/CN205122584U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021078280A1 (en) * | 2019-10-24 | 2021-04-29 | 华为技术有限公司 | Switching semiconductor device and manufacturing method therefor, and solid-state phase shifter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213022 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee after: Changzhou Galaxy century microelectronics Limited by Share Ltd Address before: 213022 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee before: Changzhou Galaxy Century Micro-Electronics Co., Ltd. |