CN205120646U - 一种气体传感器芯片 - Google Patents
一种气体传感器芯片 Download PDFInfo
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- CN205120646U CN205120646U CN201520913027.XU CN201520913027U CN205120646U CN 205120646 U CN205120646 U CN 205120646U CN 201520913027 U CN201520913027 U CN 201520913027U CN 205120646 U CN205120646 U CN 205120646U
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 25
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000000712 assembly Effects 0.000 claims description 9
- 238000000429 assembly Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 75
- 238000005516 engineering process Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
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Priority Applications (1)
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CN201520913027.XU CN205120646U (zh) | 2015-11-16 | 2015-11-16 | 一种气体传感器芯片 |
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CN201520913027.XU CN205120646U (zh) | 2015-11-16 | 2015-11-16 | 一种气体传感器芯片 |
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CN205120646U true CN205120646U (zh) | 2016-03-30 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107064222A (zh) * | 2017-05-04 | 2017-08-18 | 歌尔股份有限公司 | 气体传感器及其加工方法 |
CN107941859A (zh) * | 2017-11-10 | 2018-04-20 | 中国人民解放军陆军防化学院 | 气体传感器及其制备方法 |
CN111044577A (zh) * | 2019-12-27 | 2020-04-21 | 安徽芯淮电子有限公司 | 基于玻璃基底的mems半导体式气体传感器及其制作方法 |
CN111372178A (zh) * | 2019-12-15 | 2020-07-03 | 瑞声科技(新加坡)有限公司 | 一种mems麦克风、阵列结构及加工方法 |
-
2015
- 2015-11-16 CN CN201520913027.XU patent/CN205120646U/zh active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107064222A (zh) * | 2017-05-04 | 2017-08-18 | 歌尔股份有限公司 | 气体传感器及其加工方法 |
CN107064222B (zh) * | 2017-05-04 | 2024-04-19 | 潍坊歌尔微电子有限公司 | 气体传感器及其加工方法 |
CN107941859A (zh) * | 2017-11-10 | 2018-04-20 | 中国人民解放军陆军防化学院 | 气体传感器及其制备方法 |
CN111372178A (zh) * | 2019-12-15 | 2020-07-03 | 瑞声科技(新加坡)有限公司 | 一种mems麦克风、阵列结构及加工方法 |
CN111372178B (zh) * | 2019-12-15 | 2022-01-11 | 瑞声科技(新加坡)有限公司 | 一种mems麦克风、阵列结构及加工方法 |
CN111044577A (zh) * | 2019-12-27 | 2020-04-21 | 安徽芯淮电子有限公司 | 基于玻璃基底的mems半导体式气体传感器及其制作方法 |
CN111044577B (zh) * | 2019-12-27 | 2020-10-27 | 安徽芯淮电子有限公司 | 基于玻璃基底的mems半导体式气体传感器及其制作方法 |
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C14 | Grant of patent or utility model | ||
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
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TR01 | Transfer of patent right |
Effective date of registration: 20200618 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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TR01 | Transfer of patent right |