CN205079594U - Semiconductor target body furnace chamber for sintering device with water course - Google Patents

Semiconductor target body furnace chamber for sintering device with water course Download PDF

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Publication number
CN205079594U
CN205079594U CN201520789437.8U CN201520789437U CN205079594U CN 205079594 U CN205079594 U CN 205079594U CN 201520789437 U CN201520789437 U CN 201520789437U CN 205079594 U CN205079594 U CN 205079594U
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CN
China
Prior art keywords
furnace chamber
water channel
semiconductor target
target body
water course
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201520789437.8U
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Chinese (zh)
Inventor
刘兰英
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Individual
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Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201520789437.8U priority Critical patent/CN205079594U/en
Application granted granted Critical
Publication of CN205079594U publication Critical patent/CN205079594U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model relates to an electromechanical technical field especially relates to a semiconductor target body furnace chamber for sintering device with water course, the furnace chamber includes flange, casing, water course and lower flange, go up flange seal fixed connection in the upper shed portion of casing, lower flange seal fixed connection is in the under shed portion of casing, and the sealed water course fixed connection of cooling is on casing outside surface, and the water course leads to water always among the semiconductor target base sintering process, and the cooling water that flows is exercised cooling function and can be made the even of the inside thermal field of furnace chamber, and water course itself also provides resistance to compression supporting role, improves furnace chamber intensity for the furnace chamber, has reduced the preparation cost reduction of furnace chamber simultaneously.

Description

With the semiconductor target body sintering equipment furnace chamber of water channel
Technical field:
The utility model relates to field of electromechanical technology, particularly relates to a kind of semiconductor target body sintering equipment furnace chamber with water channel.
Background technology:
In recent years along with plane display industry and flat panel display size maximize, the high speed development of function admirable, manufactures high density target body and is more and more required.The semiconductor target body sintering equipment of present industrial application, general is all that upper flange, lower flange and housing surround furnace chamber, thick shell is added when HTHP, or select the structure of double Shell, soly make body of heater both expensive and rate of temperature fall is lower, also there is hot-spot near heating tube, whole furnace interior is heated the problem such as uneven.
Utility model content:
The purpose of this utility model is to provide a kind of semiconductor target body sintering equipment furnace chamber with water channel.The water channel in outside is distributed in heating tube both sides, and in the process of heating tube work, water channel one leads directly to cooling water, and the water in pipeline can make around heating tube can not hot-spot, ensures that the inner thermal field of furnace chamber is even, and plays the effect cooled; Also have and have the effect of reinforcing housing and gaining in strength at the working condition water channel of high pressure, expense is compared and is added merely thick shell or use double Shell greatly to reduce, and saves the cost of manufacture of furnace chamber.
The utility model for achieving the above object, takes technical scheme as follows:
With the semiconductor target body sintering equipment furnace chamber of water channel, comprise upper flange, housing, water channel and lower flange; Upper flange is sealedly and fixedly connected in the upper shed portion of housing, and lower flange is sealedly and fixedly connected in the under shed portion of housing, and water channel is sealedly and fixedly connected on hull outside surface.
As further improvement of the utility model, described water channel is stainless steel sealing water channel, or improve further described water channel be symmetrically be arranged on hull outside surface; Water channel can be U-shaped, O shape or the common water channel shape such as trapezoidal.
As further improvement of the utility model, described upper flange is stainless steel forgings, the upper shed portion of the housing that is sealedly and fixedly connected by the mode of welding.
As further improvement of the utility model, described lower flange is stainless steel forgings, the under shed portion of the housing that is sealedly and fixedly connected by the mode of welding.
A kind of semiconductor target body sintering equipment furnace chamber with water channel that the utility model provides, cools and ensures that furnace chamber inside is heated evenly, cost-saving, resistance to compression is firm.
Accompanying drawing illustrates:
Accompanying drawing 1 is the front view of the semiconductor target body sintering equipment furnace chamber with water channel.
Accompanying drawing 2 is the sectional views in the front view QQ face of semiconductor target body sintering equipment furnace chamber with water channel.
Accompanying drawing 3 is shaft type figure of the semiconductor target body sintering equipment furnace chamber with water channel.
In figure: housing 1, upper flange 2, lower flange 3, water channel 4.
Detailed description of the invention:
With the semiconductor sintering equipment furnace chamber of water channel, comprise upper flange 2, housing 1, water channel 4 and lower flange 3; Described housing 1 is stainless steel materials, upper flange 2 and lower flange 3 are stainless steel forgings, upper flange 2 seal welding is in the upper shed portion of housing 1, lower flange 3 seal welding is in the under shed portion of housing 1, the U-shaped sealing water channel 4 that water channel 4 is stainless steel materials bending, is welded on four surfaces outside housing 1.
In semiconductor blank sintering process, thermal field and the semiconductor base substrate of semiconductor sintering equipment are placed in furnace chamber, the water channel 4 in outside is evenly distributed on heating tube both sides, with semiconductor target body sintering equipment furnace chamber straight-through cooling water of water channel 4 one in semiconductor base sintering process of water channel 4, cooling water enters cooling tower after being heated around furnace chamber, pass into again around furnace chamber after cooling and exercise refrigerating function, the cooling water of flowing can make around heating tube can not hot-spot, ensures that the inner thermal field of furnace chamber is even; Also have and have at the working condition water channel 4 of high pressure the effect increasing housing 1 intensity, expense is compared and is added merely thick shell or use double Shell greatly to reduce, and saves the cost of manufacture of furnace chamber.
Furnace chamber is through the reinforcing of outside water channel 4, and more solid, resistance to compression, and except passing into liquid water inside water channel 4, also can pass into other cooling liquid, produces and better cool effect.
A kind of semiconductor target body sintering equipment furnace chamber with water channel 4 provided of the present utility model.The water channel 4 in outside not only the inner thermal field of guaranteed furnace chamber evenly, the effect that cools, also have the effect of reinforcing housing 1 in the working condition of high pressure, expense is compared and is added merely thick shell or use double Shell greatly to reduce, better effects if.

Claims (8)

1., with the semiconductor target body sintering equipment furnace chamber of water channel, it is characterized in that, comprise upper flange, housing, water channel and lower flange; Upper flange is sealedly and fixedly connected in the upper shed portion of housing, and lower flange is sealedly and fixedly connected in the under shed portion of housing, and water channel is sealedly and fixedly connected on hull outside surface.
2. the semiconductor target body sintering equipment furnace chamber with water channel according to claim 1, is characterized in that described water channel is stainless steel sealing water channel.
3. the semiconductor target body sintering equipment furnace chamber with water channel according to claim 2, it is characterized in that described water channel symmetrically be arranged on hull outside surface.
4. a arbitrarily semiconductor target body sintering equipment furnace chamber with water channel according to claim 1-3, is characterized in that described housing the selection of material is stainless steel.
5. a arbitrarily semiconductor target body sintering equipment furnace chamber with water channel according to claim 1-3, is characterized in that mode that described upper flange welds is sealedly and fixedly connected the upper shed portion of housing.
6. the semiconductor target body sintering equipment furnace chamber with water channel according to claim 5, is characterized in that described upper flange is stainless steel forgings.
7. a arbitrarily semiconductor target body sintering equipment furnace chamber with water channel according to claim 1-3, is characterized in that mode that described lower flange welds is sealedly and fixedly connected the under shed portion of housing.
8. the semiconductor target body sintering equipment furnace chamber with water channel according to claim 7, is characterized in that described lower flange is stainless steel forgings.
CN201520789437.8U 2015-10-14 2015-10-14 Semiconductor target body furnace chamber for sintering device with water course Expired - Fee Related CN205079594U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520789437.8U CN205079594U (en) 2015-10-14 2015-10-14 Semiconductor target body furnace chamber for sintering device with water course

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520789437.8U CN205079594U (en) 2015-10-14 2015-10-14 Semiconductor target body furnace chamber for sintering device with water course

Publications (1)

Publication Number Publication Date
CN205079594U true CN205079594U (en) 2016-03-09

Family

ID=55431997

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520789437.8U Expired - Fee Related CN205079594U (en) 2015-10-14 2015-10-14 Semiconductor target body furnace chamber for sintering device with water course

Country Status (1)

Country Link
CN (1) CN205079594U (en)

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160309

Termination date: 20161014