CN205028900U - 抗辐照高速光电耦合器 - Google Patents
抗辐照高速光电耦合器 Download PDFInfo
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- CN205028900U CN205028900U CN201520710779.6U CN201520710779U CN205028900U CN 205028900 U CN205028900 U CN 205028900U CN 201520710779 U CN201520710779 U CN 201520710779U CN 205028900 U CN205028900 U CN 205028900U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
本实用新型提供了一种可靠性好的抗辐照高速光电耦合器,包括管座,位于管座上方的外盖板,所述管座内设有多个极片,伸出管座;所述管座外缘设有胶套,所述胶套将极片伸出管座部分包裹住;所述管座上设有凹槽,所述一个极片上设有另一凹槽,所述凹槽内设有光敏芯片,所述另一凹槽内设有发光芯片,所述光敏芯片和发光芯片分别通过金丝与极片相连。本实用新型的抗辐照高速光电耦合器,结构紧凑,封装效果好,性能可靠。
Description
技术领域
本实用新型涉及一种光电耦合器,尤其是一种抗辐照高速光电耦合器。
背景技术
随着中国航天事业的发展,航天用户对半导体器件抗辐照、高可靠的要求日益突出。以前此类器件抗辐照性能差、可靠性差,不能作为航天器件适用。因此对器件抗辐照性能、高可靠性的需求迫在眉睫。
实用新型内容
本实用新型提供了一种可靠性好的抗辐照高速光电耦合器。
实现本实用新型目的的抗辐照高速光电耦合器,包括管座,位于管座上方的外盖板,所述管座内设有多个极片,伸出管座;所述管座外缘设有胶套,所述胶套将极片伸出管座部分包裹住;所述管座上设有凹槽,所述一个极片上设有另一凹槽,所述凹槽内设有光敏芯片,所述另一凹槽内设有发光芯片,所述光敏芯片和发光芯片分别通过金丝与极片相连。
本实用新型的抗辐照高速光电耦合器的有益效果如下:
本实用新型的抗辐照高速光电耦合器,结构紧凑,封装效果好,性能可靠。
附图说明
图1为本实用新型的抗辐照高速光电耦合器的结构示意图。
图2为图1的俯视图。
具体实施方式
如图1、2所示,本实用新型的抗辐照高速光电耦合器,包括管座1,位于管座1上方的外盖板2,所述管座1内设有多个极片6,伸出管座1;所述管座1外缘设有胶套7,所述胶套7将极片6伸出管座1部分包裹住;所述管座1上设有凹槽,所述一个极片6上设有另一凹槽,所述凹槽内设有光敏芯片4,所述另一凹槽内设有发光芯片3,所述光敏芯片4和发光芯片3分别通过金丝5与极片6相连。
上面所述的实施例仅仅是对本实用新型的优选实施方式进行描述,并非对本实用新型的范围进行限定,在不脱离本实用新型设计精神前提下,本领域普通工程技术人员对本实用新型技术方案做出的各种变形和改进,均应落入本实用新型的权利要求书确定的保护范围内。
Claims (1)
1.抗辐照高速光电耦合器,其特征在于:包括管座,位于管座上方的外盖板,所述管座内设有多个极片,伸出管座;所述管座外缘设有胶套,所述胶套将极片伸出管座部分包裹住;所述管座上设有凹槽,所述一个极片上设有另一凹槽,所述凹槽内设有光敏芯片,所述另一凹槽内设有发光芯片,所述光敏芯片和发光芯片分别通过金丝与极片相连。
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CN201520710779.6U CN205028900U (zh) | 2015-09-15 | 2015-09-15 | 抗辐照高速光电耦合器 |
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CN205028900U true CN205028900U (zh) | 2016-02-10 |
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2015
- 2015-09-15 CN CN201520710779.6U patent/CN205028900U/zh active Active
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