CN205024316U - Ash that separates of pure ion plating device filter turns over board - Google Patents
Ash that separates of pure ion plating device filter turns over board Download PDFInfo
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- CN205024316U CN205024316U CN201520813285.0U CN201520813285U CN205024316U CN 205024316 U CN205024316 U CN 205024316U CN 201520813285 U CN201520813285 U CN 201520813285U CN 205024316 U CN205024316 U CN 205024316U
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Abstract
The utility model relates to an ash that separates of pure ion plating device filter turns over board, wherein the plasma that produces of negative pole target removes to the entry of filter, be provided with the positive pole around the negative pole target, the export and the coating chamber room intercommunication of filter, the indoor substrate of placing of coating chamber, the exit position department of filter is provided with the oscillating and turns over the board, the oscillating turn over the board appear the export that is used for the shutoff filter and the filter between form two kinds of location State that supply the passageway that plasma passes through, should turn over the board can effectively shelter from foreign particles, can not produce great influence to the performance of bleeding again. Before pure ion plating source is preheated or is worked, turn over the board and be in closed position, guarantee that the foreign particles that the temperature rise in -process produced can not escape out the filter and pollute cavity and substrate, to work as state of temperature and vacuum and tend towards stability, the coating film environment is cleaner, turns over the board and opens beginning nanometer thin film deposition voluntarily.
Description
Technical field
The utility model relates to technical field of material surface treatment, be specifically related to a kind of pure apparatus for ionically plating strainer every grey turnover panel.
Background technology
Pure apparatus for ionically plating is widely used in the outside surface plated film production of part, the part to be coated after production utilizes pure apparatus for ionically plating establish one deck or several layers of coating at the plated surface of part, to change the surface property of plated component.Pure apparatus for ionically plating is formed primarily of vacuum-pumping system, cathode targets, anode, strainer, plated film chamber, substrate and some auxiliary spare parts, and wherein, described strainer entirety presents quarter bend tubular structure.Move from cathode targets surface excitation plasma body out to filter inlet direction; the other end outlet and the plated film chamber of strainer; described substrate to be coated is arranged in plated film chamber; ionic fluid after filtration is by strainer and be deposited on substrate; thus complete coating process; wherein; strainer forms the passage of plasma body on the one hand; play on the other hand and absorb or store impurity particle; stop larger particle through strainer; thus reduce particle dust to the pollution of plated film chamber, play the clean effect keeping plated film chamber.
Gas molecule, impurity, particle etc. are all sticked in the surface of various material, and when being heated or bombard, these particle, impurity etc. can absorb energy and strainer adsorption surface of escaping out, thus pollute film coating environment and by the surface of film plating substrate.Even if substrate is cleaned up before being put into chamber, after the pollution being subject to particle, impurity, also likely dirty, cause the particle of nanometer rete more or larger, 10-15 minute before pure ion film plating source is preheated or starts working, be attached on the particle of the internal surface of strainer, impurity in a large number, because temperature raises or is subject to bombardment obtain enough energy and adsorption surface of escaping out, pollute plated film cavity environment and plated substrate surface, cause membrane-coating granules comparatively large, rete Adhesion property is also affected.
Utility model content
The purpose of this utility model is: provide a kind of pure apparatus for ionically plating strainer every grey turnover panel, guaranteeing that plasma body passes through ground simultaneously, prevent dust granule from entering plated film chamber by strainer.
For achieving the above object, the technical solution adopted in the utility model is: a kind of pure apparatus for ionically plating strainer every grey turnover panel, comprise cathode targets, the plasma body that described cathode targets produces moves to the entrance of strainer, anode is provided with around cathode targets, the outlet of strainer and plated film chamber, substrate is placed in described plated film chamber, the outlet position place swing type of described strainer is provided with turnover panel, swing type turnover panel present for shutoff strainer outlet and and strainer between form two kinds of location status of the passage passed through for ionic fluid.
Compared with prior art, the technique effect that the utility model possesses is: this turnover panel effectively can block impurity particle, can not produce considerable influence again to pumping performance.Before pure ion film plating source preheating or work, turnover panel is in off-position, guarantee that the impurity particle produced in temperature rise process can not be escaped out strainer and pollute chamber and substrate, when state of temperature and vacuum tightness tend towards stability, film coating environment is cleaner, turnover panel is opened automatically, starts Nanometer thin film deposition.Automatic protection turnover panel keeps apart the impurity particle of substrate and preheating or the generation of plated film initial stage, effectively reduces the particle of nanometer rete.
Accompanying drawing explanation
Fig. 1 is pure apparatus for ionically plating structural representation.
Embodiment
Composition graphs 1, the utility model is further described:
A kind of pure apparatus for ionically plating strainer every grey turnover panel, comprise cathode targets 10, the plasma body that described cathode targets 10 produces moves to the entrance of strainer 20, anode 30 is provided with around cathode targets 10, the outlet of strainer 20 is communicated with plated film chamber 40, substrate 50 is placed in described plated film chamber 40, the outlet position place of described strainer 20 is provided with swing type turnover panel 60, swing type turnover panel 60 present for shutoff strainer 20 outlet and and strainer 20 between form two kinds of location status of the passage passed through for plasma body.
This turnover panel 60 effectively can block impurity particle, can not produce considerable influence again to pumping performance.Before pure ion film plating source preheating or work, turnover panel 60 is in off-position, guarantee that the impurity particle produced in temperature rise process can not be escaped out strainer 20 and pollute plated film chamber 40 and substrate 50, when state of temperature and vacuum tightness tend towards stability, film coating environment is cleaner, turnover panel 20 is opened automatically, starts Nanometer thin film deposition.Automatic protection turnover panel 60 keeps apart the impurity particle of substrate 50 and preheating or the generation of plated film initial stage, effectively reduces the particle of nanometer rete.
As preferred version of the present utility model, the outlet position place of described strainer 20 is also provided with dust baffle plate 70, described dust baffle plate 70 offers the through hole 71 supplying the ionic fluid a of plasma body formation to pass through, described turnover panel 60 is arranged on the front of dust baffle plate 70, between dust baffle plate 70 and turnover panel 60, interval is arranged, shown in composition graphs 1, be heated or bombard the dust of generation, first impurity particle is subject to the barrier effect of dust baffle plate 70, this dust baffle plate 70 blocks most dust granule, even if there is the dust granule of small portion to be escaped out by through hole 71 position, turnover panel 60 can play further barrier effect, thus avoid dust granule on the impact of the degree of cleaning of plated film chamber 40.
Further preferably, between described turnover panel 60 and dust baffle plate 70, distance range is 5 ~ 10mm.
Shown in composition graphs 1, the area of described turnover panel 60 is greater than through hole 71 area, and the edge of turnover panel 60 and through hole 71 are that angle b scope between I edge line and horizontal center line is between 40 ° ~ 50 °.
The overall at right angles syphon shape structure of described strainer 20, the dust overwhelming majority entered in strainer 20 is blocked on the tube wall of the pipe bent position of strainer 20, so just considerably reduce the quantity of dust granule, ensure that the quality of plated film, one end mouth of pipe of strainer 20 forms entrance, the mouth of pipe of the other end of strainer 20 forms outlet, and outlet and the plated film chamber 40 of strainer 20 are tightly connected.
In tubular construction, described cathode targets 10 is arranged in the tube chamber of anode 30 described anode 30, and the pipe end of anode 30 and the entrance of strainer 20 form and be tightly connected.
Claims (6)
1. a pure apparatus for ionically plating strainer every grey turnover panel, comprise cathode targets (10), the plasma body that described cathode targets (10) produces moves to the entrance of strainer (20), cathode targets (10) is provided with anode (30) around, the outlet of strainer (20) is communicated with plated film chamber (40), substrate (50) is placed in described plated film chamber (40), it is characterized in that: the outlet position place of described strainer (20) is provided with swing type turnover panel (60), swing type turnover panel (60) present for shutoff strainer (20) outlet and and strainer (20) between form two kinds of location status of the passage passed through for plasma body.
2. pure apparatus for ionically plating strainer according to claim 1 every grey turnover panel, it is characterized in that: the outlet position place of described strainer (20) is also provided with dust baffle plate (70), described dust baffle plate (70) offers the through hole (71) passed through for plasma body, described turnover panel (60) is arranged on the front of dust baffle plate (70), and between dust baffle plate (70) and turnover panel (60), interval is arranged.
3. pure apparatus for ionically plating strainer according to claim 2 every grey turnover panel, it is characterized in that: between described turnover panel (60) and dust baffle plate (70), distance range is 5 ~ 10mm.
4. pure apparatus for ionically plating strainer according to claim 2 every grey turnover panel, it is characterized in that: the area of described turnover panel (60) is greater than through hole (71) area, the edge of turnover panel (60) and the angular range between the edge line of through hole (71) and horizontal center line are between 40 ° ~ 50 °.
5. the pure apparatus for ionically plating strainer according to claim 1 or 2 or 3 every grey turnover panel, it is characterized in that: the overall at right angles syphon shape structure of described strainer (20), one end mouth of pipe of strainer (20) forms entrance, the mouth of pipe of the other end of strainer (20) forms outlet, and outlet and the plated film chamber (40) of strainer (20) are tightly connected.
6. pure apparatus for ionically plating strainer according to claim 1 every grey turnover panel, it is characterized in that: described anode (30) in tubular construction, described cathode targets (10) is arranged in the tube chamber of anode (30), and the pipe end of anode (30) and the entrance of strainer (20) form and be tightly connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520813285.0U CN205024316U (en) | 2015-10-21 | 2015-10-21 | Ash that separates of pure ion plating device filter turns over board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520813285.0U CN205024316U (en) | 2015-10-21 | 2015-10-21 | Ash that separates of pure ion plating device filter turns over board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205024316U true CN205024316U (en) | 2016-02-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520813285.0U Active CN205024316U (en) | 2015-10-21 | 2015-10-21 | Ash that separates of pure ion plating device filter turns over board |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205024316U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108837962A (en) * | 2018-07-13 | 2018-11-20 | 金华职业技术学院 | The vacuum deposition apparatus of one organic molecular species |
| CN113278929A (en) * | 2021-05-28 | 2021-08-20 | 安徽纯源镀膜科技有限公司 | Multilayer conductive nano coating and production process thereof |
-
2015
- 2015-10-21 CN CN201520813285.0U patent/CN205024316U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108837962A (en) * | 2018-07-13 | 2018-11-20 | 金华职业技术学院 | The vacuum deposition apparatus of one organic molecular species |
| CN108837962B (en) * | 2018-07-13 | 2024-02-13 | 金华职业技术学院 | Vacuum deposition device for organic molecules |
| CN113278929A (en) * | 2021-05-28 | 2021-08-20 | 安徽纯源镀膜科技有限公司 | Multilayer conductive nano coating and production process thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |