CN205016831U - Grand passageway of semiconductor laser monolithic formula is heat sink - Google Patents
Grand passageway of semiconductor laser monolithic formula is heat sink Download PDFInfo
- Publication number
- CN205016831U CN205016831U CN201520757400.7U CN201520757400U CN205016831U CN 205016831 U CN205016831 U CN 205016831U CN 201520757400 U CN201520757400 U CN 201520757400U CN 205016831 U CN205016831 U CN 205016831U
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- Prior art keywords
- heat sink
- semiconductor laser
- main body
- chip
- sealed groove
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000009434 installation Methods 0.000 claims description 25
- 230000000694 effects Effects 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000003796 beauty Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
The utility model discloses a grand passageway of semiconductor laser monolithic formula is heat sink, including heat sink main part, install the chip position in the one end of heat sink main part, water -cooling position in the position that is close to the install the chip district is still including the pinhole that link up heat sink main part from top to bottom, just the pinhole is located the one end of keeping away from the install the chip district. Compared with the prior art, this grand passageway of semiconductor laser monolithic formula is heat sink structure is compacter reasonable, and the radiating effect can not receive the influence yet.
Description
Technical field
The utility model relates to semiconductor laser apparatus field, and particularly the grand passage of a kind of semiconductor laser one chip is heat sink.
Background technology
High power semiconductor lasers is widely used in fields such as solid state laser pumping, laser processing, laser medicine, beauty treatments, but semiconductor laser operationally, 30% ~ 50% electric energy of having an appointment can be converted into heat energy loss, and along with the increase of power, the cooling requirements faced is harsher.
The packing forms of current semiconductor laser has overall grand passage and microchannel.
For high-power semiconductor laser, adopt overall grand channel mode, radiating efficiency is not high, generally can only reach the power output of tens watts, fold battle array due to semiconductor laser is by the high power module of multiple semiconductor laser chip (also known as bar bar) tight vertical arrangement simultaneously, a chip of laser goes wrong and whole laser can be caused to cancel, although radiating efficiency can be improved to a certain extent according to micro-channel heat sink, but it is heat sink own and expensive, deionized water is needed in use procedure, cost is higher, and long-time use equally can cause micro-channel tubes wall erosion or blocking because of electrochemical reaction, have a strong impact on the reliability of semiconductor laser.
In prior art, one end that grand passage is heat sink is laser chip installing zone, arranges water-cooled district near laser chip installing zone, and during use, cooling fluid, by water-cooled district, is laser chip cooling.One end away from chip installation area is provided with limbers, cooling fluid is by behind water-cooled district, limbers is arrived through circulation, heat sink part near limbers is played to the effect of secondary heat radiation, at heat sink middle part, pin-and-hole is set, after multiple heat sink superposition, multiple heat sink fixed Combination can be got up through pin-and-hole by connector.But, applicant finds through a large amount of engineering test, cooling fluid is behind water-cooled district, radiating effect has reached enough good effect, and above-mentioned secondary thermolysis is also little, and therefore limbers is equivalent to occupy the larger area of heat sink main body, but the effect played is not obvious, make heat sink structure compact not, after pin-and-hole is arranged on heat sink middle part in addition, also can take larger space.
In view of this, special proposition the utility model.
Utility model content
It is heat sink that the purpose of this utility model is to provide the grand passage of a kind of semiconductor laser one chip, both ensure that heat dispersion, makes again structure compact and reasonable more.
To achieve these goals, the grand passage of a kind of semiconductor laser one chip that the utility model provides is heat sink, comprise heat sink main body, chip installation area is positioned at one end of heat sink main body, water-cooled district is positioned at the position near chip installation area, also comprise the pin-and-hole of up/down perforation heat sink main body, and described pin-and-hole is positioned at the one end away from chip installation area.
Preferably, described heat sink main body is provided with the first sealed groove away from the end surface of chip installation area, is provided with a boss in the first sealed groove, and described pin-and-hole is positioned at this boss place.
More preferably, described boss comprises two sidewalls be parallel to each other, and described pin-and-hole is through described heat sink main body from the position of boss, and the edge of pin-and-hole and boss two sidewalls be parallel to each other tangent.
Preferably, also comprise the second sealed groove, described second sealed groove is surrounded on around described water-cooled district.
Preferably, described heat sink main body is provided with the 3rd sealed groove and the 4th sealed groove and position is corresponding with the first sealed groove and the second sealed groove respectively in the one side deviating from place, described chip installation area.
Preferably, the quantity of described pin-and-hole is two, and two pin-and-holes arrange along the broadside of heat sink main body.
Preferably, if cross the center of circle of described pin-and-hole to make a datum line parallel with heat sink main body, then the geometric center in described water-cooled district is 7mm-12mm to the distance of described datum line.
Preferably, the grid that water-cooled district is provided with through heat sink main body is stated; Grid is made up of at least two grate openings arranged in parallel, and each grate opening comprises two sidewalls be parallel to each other and the cohesive end for being connected two sidewalls.
Preferably, the cohesive end of described grate opening is circular shape, and
Distance in each grate opening between two sidewalls is significantly less than the length of sidewall.
Preferably, the both sides of described chip installation area are provided with breach, and
The length in water-cooled district is not less than the length of chip installation area.
The grand passage of semiconductor laser one chip that the utility model provides is heat sink, pin-and-hole is arranged on the one end away from chip installation area, instead of limbers of the prior art, and ensure that heat sink main body length can be designed to be less, structure is compacter.
Accompanying drawing explanation
Fig. 1 is the heat sink structural representation of the grand passage of semiconductor laser one chip provided by the utility model;
Fig. 2 is the vertical view that in Fig. 1, the grand passage of semiconductor laser one chip is heat sink;
Fig. 3 is the plan structure schematic diagram of grate opening;
Fig. 4 is the heat sink volume rendering structure chart of the grand passage of semiconductor laser one chip.
Embodiment
In order to make those skilled in the art person understand the utility model scheme better, below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Please refer to Fig. 1-3, the grand passage of semiconductor laser one chip that the utility model provides is heat sink, and comprise heat sink main body 1, chip installation area 2 is positioned at one end of heat sink main body 1, and water-cooled district 3 is positioned at the position near chip installation area 2.
Heat sink main body 1 is provided with the first sealed groove 51 away from the end surface of chip installation area 2, sealing when to fold gust for heat sink composition semiconductor laser body.Be provided with a boss 9 in first sealed groove 51, boss 9 comprises two sidewalls be parallel to each other 91, is arc for being connected the part of two parallel side walls 91, thus makes the surface of boss 9 be racetrack shape.Boss 9 is provided with pin-and-hole 6, pin-and-hole 6 from boss 9 up/down perforation heat sink main body 1, when multiple heat sink need to be superimposed time, by pin-and-hole 6, each is heat sinkly assembled.The quantity of pin-and-hole 6 is preferably two, and arranges along the broadside of heat sink main body 1, and this spline structure is compacter, stability is also better.The circle center line connecting of two pin-and-holes 6 is parallel with heat sink main body 1 broadside, if with above-mentioned circle center line connecting for datum line, then it is 7-12mm to the distance a of water-cooled district geometric center, is 9.75mm in the present embodiment.In addition, the sidewall 91 that the edge of pin-and-hole 6 and boss 9 two are parallel to each other is tangent, thus takes full advantage of boss area.When making heat sink, directly can mill out the first sealed groove 51 of racetrack with milling cutter in heat sink main body 1, inside the first sealed groove 51, just directly define boss 9 like this, now the inwall of the first sealed groove 51 is the sidewall of boss 9.
As further improvement, heat sink main body 1 is also arranged the second sealed groove 52, second sealed groove 52 and be surrounded on described water-cooled district 3 around, form the annular groove of runway shape.After adopting the second groove 52 to coordinate with the first groove 51, structure is more symmetrical stable.Described heat sink main body 1 be provided with in the one side deviating from place, described chip installation area 2 the 3rd sealed groove 53 with the 4th sealed groove 54 (as shown in Figure 4) and position respectively with the first sealed groove 51 with the second sealed groove 52 is corresponding, shape size is also consistent with above-mentioned two grooves.This further increases the compressive resistance of sealing on the one hand, on the other hand, makes structure (except chip installation area 2) the upper and lower, left and right full symmetric of heat sink main body 1, is easy to processing, reduces heat sink production cost.
Water-cooled district 3 is provided with the grid be made up of multiple grate opening 4, and each grate opening 4 is through heat sink main body 1 from top to bottom, forms the passage for refrigerating fluid circulation.The pass of grate opening 4 is similar to racetrack, namely the sidewall 41 that two are parallel to each other, length is equal is comprised, two free ends of sidewall 41 are connected by cohesive end 42, the shape of cohesive end 42 is circular arc, on same grate opening 4, distance between two parallel side walls 41, namely the width of grate opening 4 is significantly less than the length of sidewall 41, forms aforesaid " racetrack " pass after being engaged togather to make cohesive end 42 and sidewall 41.Adopt the channel design of grating type, parallel sidewall makes grate opening border more smooth, and radiating surface is more even, and can limit the irregularity degree of cohesive end, make the part of cohesive end near chip installation area concordant as far as possible, and then make better heat-radiation effect even.Distance between two parallel side walls 41 is 0.3-2.0mm, specifically 0.5mm in the present embodiment, and the length of grate opening 4 is 2.5mm (calculating to the outermost end points of another cohesive end with the outermost end points of a cohesive end).Adopt 12 groups of above-mentioned grate openings 4 to form grid in the present embodiment, 12 groups of grate openings 4 are equidistantly arranged in parallel within water-cooled district 3, and the distance between two adjacent groups grate opening 4 is not less than 0.2mm.
The both sides of chip installation area 2 are provided with breach 7, chip installation area 2 is made to form outwardly structure relative to other parts of heat sink main body 1, the setting of the length in water-cooled district 3 is longer than except the length of chip installation area 2 except convenient by the design of breach 7, there is provided working space can also to various weld jig, facilitate it to be installed to semiconductor laser chip (also known as bar bar, BAR bar), to locate and to calibrate, add stability and the reliability of semiconductor laser chip.
Be described in detail the grand passage of semiconductor laser one chip provided by the utility model is heat sink above.Apply specific case herein to set forth principle of the present utility model and execution mode, the explanation of above embodiment just understands core concept of the present utility model for helping.Should be understood that; for those skilled in the art; under the prerequisite not departing from the utility model principle, can also carry out some improvement and modification to the utility model, these improve and modify and also fall in the protection range of the utility model claim.
Claims (10)
1. the grand passage of semiconductor laser one chip is heat sink, comprise heat sink main body (1), chip installation area (2) is positioned at one end of heat sink main body (1), water-cooled district (3) is positioned at the position near chip installation area (2), it is characterized in that, also comprise the pin-and-hole (6) of up/down perforation heat sink main body (1), and described pin-and-hole (6) is positioned at the one end away from chip installation area (2).
2. the grand passage of semiconductor laser one chip according to claim 1 is heat sink, it is characterized in that, described heat sink main body (1) is provided with the first sealed groove (51) away from the end surface of chip installation area (2), be provided with a boss (9) in first sealed groove (51), described pin-and-hole (6) is positioned at this boss (9) place.
3. the grand passage of semiconductor laser one chip according to claim 2 is heat sink, it is characterized in that, described boss (9) comprises two sidewalls be parallel to each other (91), described pin-and-hole (6) is through described heat sink main body (1) from the position of boss (9), and the edge of pin-and-hole (6) and boss (9) two sidewalls be parallel to each other (91) tangent.
4. the grand passage of semiconductor laser one chip according to claim 2 is heat sink, it is characterized in that, also comprises the second sealed groove (52), and described second sealed groove (52) is surrounded on described water-cooled district (3) around.
5. the grand passage of semiconductor laser one chip according to claim 4 is heat sink, it is characterized in that, described heat sink main body (1) in the one side deviating from described chip installation area (2) place, be provided with the 3rd sealed groove and the 4th sealed groove and position is corresponding with the first sealed groove (51) and the second sealed groove (52) respectively.
6. the grand passage of semiconductor laser one chip according to claim 1 is heat sink, it is characterized in that, the quantity of described pin-and-hole (6) is two, and two pin-and-holes (6) arrange along the broadside of heat sink main body (1).
7. the grand passage of semiconductor laser one chip according to claim 1 is heat sink, it is characterized in that, if a datum line parallel with heat sink main body (1) is made in the center of circle crossing described pin-and-hole (6), then the geometric center of described water-cooled district (3) is 7mm-12mm to the distance of described datum line.
8. the grand passage of semiconductor laser one chip according to claim 1 is heat sink, it is characterized in that, states the grid that water-cooled district (3) is provided with through heat sink main body (1); Grid is made up of at least two grate openings (4) arranged in parallel, and each grate opening (4) comprises two sidewalls be parallel to each other (41) and the cohesive end (42) for being connected two sidewalls.
9. the grand passage of semiconductor laser one chip according to claim 8 is heat sink, it is characterized in that, the cohesive end (41) of described grate opening (4) is circular shape, and
Distance in each grate opening (4) between two sidewalls (41) is significantly less than the length of sidewall (41).
10. the grand passage of semiconductor laser one chip according to claim 1 is heat sink, it is characterized in that, the both sides of described chip installation area (2) are provided with breach (7), and the length of water-cooled district (3) is not less than the length of chip installation area (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520757400.7U CN205016831U (en) | 2015-09-28 | 2015-09-28 | Grand passageway of semiconductor laser monolithic formula is heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520757400.7U CN205016831U (en) | 2015-09-28 | 2015-09-28 | Grand passageway of semiconductor laser monolithic formula is heat sink |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205016831U true CN205016831U (en) | 2016-02-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520757400.7U Expired - Fee Related CN205016831U (en) | 2015-09-28 | 2015-09-28 | Grand passageway of semiconductor laser monolithic formula is heat sink |
Country Status (1)
| Country | Link |
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| CN (1) | CN205016831U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742955A (en) * | 2016-05-12 | 2016-07-06 | 核工业理化工程研究院 | Semiconductor laser diode fin-type heat dissipation device |
-
2015
- 2015-09-28 CN CN201520757400.7U patent/CN205016831U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742955A (en) * | 2016-05-12 | 2016-07-06 | 核工业理化工程研究院 | Semiconductor laser diode fin-type heat dissipation device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 |