CN204966509U - Current regulator diode structure - Google Patents
Current regulator diode structure Download PDFInfo
- Publication number
- CN204966509U CN204966509U CN201520794808.1U CN201520794808U CN204966509U CN 204966509 U CN204966509 U CN 204966509U CN 201520794808 U CN201520794808 U CN 201520794808U CN 204966509 U CN204966509 U CN 204966509U
- Authority
- CN
- China
- Prior art keywords
- trap
- current regulator
- regulator diode
- injection region
- diode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a current regulator diode structure, including P type substrate, still include P+ injection domain, N+ injection domain, N trap, negative pole, positive pole, P type substrate top is provided with the P+ injection domain, P+ injection domain top is provided with the N trap, the offside interval is provided with the N+ injection domain in the N trap, P type substrate bottom is provided with the positive pole, N trap top center is provided with the negative pole. The utility model provides a pair of current regulator diode structure, low, the low starting voltage of direct current equivalent impedance, high, the negative temperature coefficient of interchange equivalent impedance.
Description
Technical field
The utility model relates to a kind of current regulator diode structure, belongs to diode manufacturing technology field.
Background technology
Current regulator diode appears in people's life for a long time, but does not cause the concern of people, just for the standard as electric current in some instrument and meter.Recently flourish along with LED industry, this type of diode attracts wide attention.Common current regulator diode, electric current more or less can increase with voltage to some extent, and temperature characterisitic also can affect constant current effect.
Utility model content
Object: in order to overcome the deficiencies in the prior art, the utility model provides a kind of current regulator diode structure.
Technical scheme: for solving the problems of the technologies described above, the technical solution adopted in the utility model is:
A kind of current regulator diode structure, comprise P type substrate, also comprise P+ injection region, N+ injection region, N trap, negative electrode, anode, described P type substrate top is provided with P+ injection region, be provided with N trap above described P+ injection region, in described N trap, offside is arranged at intervals with N+ injection region; Be provided with anode bottom described P type substrate, described N trap top center is provided with negative electrode.
Also comprise P trap, described P trap is arranged in N+ injection region.
Described N+ injection region quantity is set to two.
Also comprise electrode, described electrode is arranged on the top of N+ injection region, N trap, P trap.
Preferably, described number of electrodes is set to two.
Preferably, described anode, electrode all adopt aluminium material.
Beneficial effect: a kind of current regulator diode structure that the utility model provides, the design's direct current equiva lent impedance is low, low start voltage, alternating current equivalent impedance are high, negative temperature coefficient.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
As shown in Figure 1, a kind of current regulator diode structure, comprises P type substrate, also comprise P+ injection region, N+ injection region, N trap, negative electrode, anode, described P type substrate top is provided with P+ injection region, is provided with N trap above described P+ injection region, and in described N trap, offside is arranged at intervals with N+ injection region; Be provided with anode bottom described P type substrate, described N trap top center is provided with negative electrode.
Also comprise P trap, described P trap is arranged in N+ injection region.
Described N+ injection region quantity is set to two.
Also comprise electrode, described electrode is arranged on the top of N+ injection region, N trap, P trap.
Preferably, described number of electrodes is set to two.
Preferably, described anode, electrode all adopt aluminium material.
Concrete occupation mode is as follows: when a reverse biased is added to negative electrode and the anode of PN junction, now current regulator diode starts conducting, when reverse biased increases, its electric current also increases, when electric current is increased to flex point, forming a depletion layer P+ injection region between N well region and P type grid, has also slowed down gathering way of electric current in the path that this depletion layer reduces electric current in N well region.
The above is only preferred implementation of the present utility model; be noted that for those skilled in the art; under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (6)
1. a current regulator diode structure, comprise P type substrate, it is characterized in that: also comprise P+ injection region, N+ injection region, N trap, negative electrode, anode, described P type substrate top is provided with P+ injection region, be provided with N trap above described P+ injection region, in described N trap, offside is arranged at intervals with N+ injection region; Be provided with anode bottom described P type substrate, described N trap top center is provided with negative electrode.
2. a kind of current regulator diode structure according to claim 1, is characterized in that: also comprise P trap, and described P trap is arranged in N+ injection region.
3. a kind of current regulator diode structure according to claim 1 and 2, is characterized in that: described N+ injection region quantity is set to two.
4. a kind of current regulator diode structure according to claim 2, is characterized in that: also comprise electrode, and described electrode is arranged on the top of N+ injection region, N trap, P trap.
5. a kind of current regulator diode structure according to claim 4, is characterized in that: described number of electrodes is set to two.
6. a kind of current regulator diode structure according to claim 1, is characterized in that: described anode, electrode all adopt aluminium material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520794808.1U CN204966509U (en) | 2015-10-15 | 2015-10-15 | Current regulator diode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520794808.1U CN204966509U (en) | 2015-10-15 | 2015-10-15 | Current regulator diode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204966509U true CN204966509U (en) | 2016-01-13 |
Family
ID=55061552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520794808.1U Expired - Fee Related CN204966509U (en) | 2015-10-15 | 2015-10-15 | Current regulator diode structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204966509U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206683A (en) * | 2015-10-15 | 2015-12-30 | 苏州汉克山姆照明科技有限公司 | Current regulative diode structure |
-
2015
- 2015-10-15 CN CN201520794808.1U patent/CN204966509U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206683A (en) * | 2015-10-15 | 2015-12-30 | 苏州汉克山姆照明科技有限公司 | Current regulative diode structure |
| CN105206683B (en) * | 2015-10-15 | 2018-07-10 | 苏州汉克山姆照明科技有限公司 | A kind of current regulator diode structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160113 Termination date: 20161015 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |