CN204332998U - A kind of high strength LED chip - Google Patents
A kind of high strength LED chip Download PDFInfo
- Publication number
- CN204332998U CN204332998U CN201420847301.3U CN201420847301U CN204332998U CN 204332998 U CN204332998 U CN 204332998U CN 201420847301 U CN201420847301 U CN 201420847301U CN 204332998 U CN204332998 U CN 204332998U
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- China
- Prior art keywords
- contact layer
- type contact
- led chip
- high strength
- layer
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- Expired - Fee Related
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Abstract
The utility model discloses a kind of high strength LED chip, comprise N-type electrode, P-type electrode, transparency conducting layer, luminescent layer, basic unit, it is characterized in that: also comprise P type contact layer, N-type contact layer, described transparency conducting layer, P type contact layer, luminescent layer, N-type contact layer, basic unit are arranged in order from top to bottom; Described P-type electrode is arranged on P type contact layer top, and N-type electrode is arranged on N-type contact layer top.A kind of high strength LED chip that the utility model provides, structural stability is good, can apply to hot environment; Mechanical strength is high, is easy to process and cleaning.
Description
Technical field
The utility model relates to a kind of high strength LED chip, belongs to LED structure technical field.
Background technology
LED chip is a kind of solid-state semiconductor device, and it directly can be converted into light electricity.The heart of LED is the wafer of a semiconductor, and one end of wafer is attached on a support, and one end is negative pole, and the other end connects the positive pole of power supply, makes whole wafer by epoxy encapsulation.Existing LED chip is due to structure problem, and often undercapacity, when by external force extruding, easily damages.
Utility model content
Object: in order to overcome the deficiencies in the prior art, the utility model provides a kind of high strength LED chip.
Technical scheme: for solving the problems of the technologies described above, the technical solution adopted in the utility model is:
A kind of high strength LED chip, comprise N-type electrode, P-type electrode, transparency conducting layer, luminescent layer, basic unit, P type contact layer, N-type contact layer, described transparency conducting layer, P type contact layer, luminescent layer, N-type contact layer, basic unit are arranged in order from top to bottom; Described P-type electrode is arranged on P type contact layer top, and N-type electrode is arranged on N-type contact layer top.
Also comprise low temperature epilayer, described low temperature epilayer is arranged between N-type contact layer and basic unit.
Preferably, described P type contact layer, N-type contact layer all adopts GaN material.
Preferably, described low temperature epilayer adopts GaN material.
Preferably, described basic unit adopts sapphire material.
Beneficial effect: a kind of high strength LED chip that the utility model provides, structural stability is good, can apply to hot environment; Mechanical strength is high, is easy to process and cleaning.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
As shown in Figure 1, a kind of high strength LED chip, comprise N-type electrode 1, P-type electrode 2, transparency conducting layer 3, luminescent layer 4, basic unit 5, P type contact layer 6, N-type contact layer 7, described transparency conducting layer 3, P type contact layer 6, luminescent layer 4, N-type contact layer 7, basic unit 5 are arranged in order from top to bottom; Described P-type electrode 2 is arranged on P type contact layer 6 top, and N-type electrode 1 is arranged on N-type contact layer 7 top.
Also comprise low temperature epilayer 8, described low temperature epilayer 8 is arranged between N-type contact layer 7 and basic unit 5.
The above is only preferred implementation of the present utility model; be noted that for those skilled in the art; under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (5)
1. a high strength LED chip, comprise N-type electrode, P-type electrode, transparency conducting layer, luminescent layer, basic unit, it is characterized in that: also comprise P type contact layer, N-type contact layer, described transparency conducting layer, P type contact layer, luminescent layer, N-type contact layer, basic unit are arranged in order from top to bottom; Described P-type electrode is arranged on P type contact layer top, and N-type electrode is arranged on N-type contact layer top.
2. a kind of high strength LED chip according to claim 1, it is characterized in that: also comprise low temperature epilayer, described low temperature epilayer is arranged between N-type contact layer and basic unit.
3. a kind of high strength LED chip according to claim 1 and 2, is characterized in that: described P type contact layer, N-type contact layer all adopts GaN material.
4. a kind of high strength LED chip according to claim 2, is characterized in that: described low temperature epilayer adopts GaN material.
5. a kind of high strength LED chip according to claim 1 and 2, is characterized in that: described basic unit adopts sapphire material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420847301.3U CN204332998U (en) | 2014-12-29 | 2014-12-29 | A kind of high strength LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420847301.3U CN204332998U (en) | 2014-12-29 | 2014-12-29 | A kind of high strength LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204332998U true CN204332998U (en) | 2015-05-13 |
Family
ID=53169321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420847301.3U Expired - Fee Related CN204332998U (en) | 2014-12-29 | 2014-12-29 | A kind of high strength LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204332998U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538528A (en) * | 2014-12-29 | 2015-04-22 | 苏州汉克山姆照明科技有限公司 | High-strength LED chip |
-
2014
- 2014-12-29 CN CN201420847301.3U patent/CN204332998U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538528A (en) * | 2014-12-29 | 2015-04-22 | 苏州汉克山姆照明科技有限公司 | High-strength LED chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150513 Termination date: 20161229 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |