CN204948040U - A kind of metal-oxide-semiconductor current foldback circuit - Google Patents
A kind of metal-oxide-semiconductor current foldback circuit Download PDFInfo
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- CN204948040U CN204948040U CN201520636902.4U CN201520636902U CN204948040U CN 204948040 U CN204948040 U CN 204948040U CN 201520636902 U CN201520636902 U CN 201520636902U CN 204948040 U CN204948040 U CN 204948040U
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Abstract
The utility model discloses a kind of metal-oxide-semiconductor current foldback circuit, the load that it comprises metal-oxide-semiconductor and is attached thereto, and the break-make control end of described metal-oxide-semiconductor is connected with the input/output port 1 of MCU; The output of described metal-oxide-semiconductor is connected with the input/output port 22 of MCU.It can not increase main current loop load, and reliably realizes the overcurrent protection of metal-oxide-semiconductor when increasing other hardware costs and PCB components and parts space hardly.
Description
Technical field
The utility model relates to metal-oxide-semiconductor resist technology field, is specially a kind of metal-oxide-semiconductor current foldback circuit.
Background technology
At present, semiconductor device development is swift and violent, metal-oxide-semiconductor because of its switching frequency high, mechanical loss and replace the big current control element that relay becomes main on control board gradually; But metal-oxide-semiconductor lacks current overload ability; it is excessive and cause the electrical current heat of metal-oxide-semiconductor to puncture that the short circuit that the short circuit that load abnormal causes, workman's wiring error cause all can make to flow through metal-oxide-semiconductor electric current; need repairing to making control board and even scrap; the abnormal conditions such as load short circuits, overcurrent are tackled for enabling metal-oxide-semiconductor on control board; need for it increases protective circuit, the overcurrent protection of metal-oxide-semiconductor generally adopts two kinds of methods:
As shown in Figure 1, protect metal-oxide-semiconductor by the 1 alloy fuse F that connects of the electric current major loop between metal-oxide-semiconductor with load, the abnormal conditions such as load short circuits or wiring error can first blowout, and turn-off current major loop, can realize the protection to metal-oxide-semiconductor; Internal resistance due to alloy fuse is very little almost can be ignored, and also can not increase load to main current loop so be connected in main current loop; But this circuit has irrecoverability, maintenance is inconvenient, increases maintenance cost of labor, can not as desirable metal-oxide-semiconductor current foldback circuit.
As shown in Figure 2, by the electric current major loop series current Sampling device between metal-oxide-semiconductor and load, current sampling devices converts current signal to voltage signal, and voltage signal amplification is fed back to MCU; When MOS overcurrent, the feedback voltage of current sampling devices increases, if when feedback voltage exceedes threshold values MCU just can control MOS grid voltage thus cut off MOS electric current major loop, realize the protection to MOS; Because the cost of current sampling devices is not low, and current sampling devices needs absorption portion main circuit current, is equivalent to add load to main current loop, so can not as desirable metal-oxide-semiconductor current foldback circuit.
To sum up chatting, existing metal-oxide-semiconductor current foldback circuit cost compare is high, complex structure, and the load having increased the weight of electric current major loop, all can not as desirable metal-oxide-semiconductor current foldback circuit.
By retrieval, there is following Patents:
Patent 1:
Application number: 201420112658.7, the applying date: 2014.03.13, the day for announcing: 2014.08.13, this utility model relates to a kind of metal-oxide-semiconductor protective circuit, comprise a single-chip microcomputer, it is characterized in that: described single-chip microcomputer connects the output of an operation amplifier unit, the first input end of described operation amplifier unit connects a PPTC one end and a sampling unit one end, the described PPTC other end connects power supply, the described sampling unit other end connects the second input and load one end of described operation amplifier unit, the described load other end connects the output of a driver element, the input of described driver element connects described single-chip microcomputer.The utility model can realize that metal-oxide-semiconductor electric current is monitored in real time, metal-oxide-semiconductor overcurrent protection, drive circuit level monitoring, load operating condition, fault type, fault point and the warning of fault time and display.
Patent 2:
Application number: 201120550497.6, the applying date: 2011.12.26, the day for announcing: 2012.07.25, this utility model discloses a kind of protective device of many metal-oxide-semiconductors, comprise MCU main control module and connected power module, be connected to the charger testing circuit of charging port, be connected to the discharge load testing circuit of electric discharge port, be connected to the charging metal-oxide-semiconductor group comprising multiple metal-oxide-semiconductor of charging port, be connected to the electric discharge metal-oxide-semiconductor group including multiple metal-oxide-semiconductor of electric discharge port, and be provided with the short circuit observation circuit and current sample module that are connected with metal-oxide-semiconductor group of discharging.The MOS group that the utility model adopts multiple MOS to form is to replace single metal-oxide-semiconductor; large-sized battery etc. can be adapted to there is higher operating voltage and the character of operating current; thus improve applicability and the versatility of battery protecting plate; reduce the power consumption of baffle self; improve baffle overcurrent capability, the life-span of available protecting battery and safety.
By analyzing, find that above patent document can not affect novelty and the creativeness of the utility model creation.
Utility model content
The purpose of this utility model is for above problem; a kind of metal-oxide-semiconductor current foldback circuit is provided; it is applicable in household electrical appliance and miniaturized electronics; can main current loop load do not increased, and reliably realize the overcurrent protection of metal-oxide-semiconductor when increasing other hardware costs and PCB components and parts space hardly.
For realizing above object, the technical solution adopted in the utility model is: a kind of metal-oxide-semiconductor current foldback circuit, the load that it comprises metal-oxide-semiconductor and is attached thereto, is characterized in that, the break-make control end of described metal-oxide-semiconductor is connected with the input/output port one (1) of MCU; The output of described metal-oxide-semiconductor is connected with the input/output port two (2) of MCU.
Further, resistance R1 is provided with between the break-make control end of described metal-oxide-semiconductor and the input/output port one (1) of MCU.
Further, resistance R2 is provided with between the output of described metal-oxide-semiconductor and the input/output port two (2) of MCU.
The beneficial effects of the utility model:
The utility model is mainly used in by the household electrical appliance of MCU control metal-oxide-semiconductor and miniaturized electronics product; This metal-oxide-semiconductor current foldback circuit system is used in household appliances and miniaturized electronics product; main current loop load can not increased; with the overcurrent protection reliably realizing metal-oxide-semiconductor when increasing other hardware costs and PCB components and parts space hardly; and the situation that the MOS that can prevent external interference from causing protects by mistake, be that one can automatic recovery type protection system.
Accompanying drawing explanation
Fig. 1 is a kind of traditional MOS current foldback circuit.
Fig. 2 is another kind of traditional MOS current foldback circuit.
Fig. 3 is the metal-oxide-semiconductor current foldback circuit in the utility model.
Fig. 4 is MOS overcurrent protection equivalent circuit diagram in the utility model.
Fig. 5 is metal-oxide-semiconductor Over Current Protection System flow chart in the utility model.
Shown in figure, numerical reference is expressed as: 1, input/output port one, and 2, input/output port two.
Embodiment
The technical solution of the utility model is understood better in order to make those skilled in the art; below in conjunction with accompanying drawing, the utility model is described in detail; the description of this part is only exemplary and explanatory, should not have any restriction to protection range of the present utility model.
As in Figure 3-5, anatomical connectivity of the present utility model closes and is: a kind of metal-oxide-semiconductor current foldback circuit, and the load that it comprises metal-oxide-semiconductor and is attached thereto, is characterized in that, the break-make control end of described metal-oxide-semiconductor is connected with the input/output port 1 of MCU; The output of described metal-oxide-semiconductor is connected with the input/output port 22 of MCU.
Preferably, resistance R1 is provided with between the break-make control end of described metal-oxide-semiconductor and the input/output port 1 of MCU.
Preferably, resistance R2 is provided with between the output of described metal-oxide-semiconductor and the input/output port 22 of MCU.
The utility model principle is as follows:
As shown in Figure 3, the utility model by positive supply (VCC), metal-oxide-semiconductor, load, power supply ground (GND) composition, metal-oxide-semiconductor break-make control loop is controlled by the IO1 of MCU, and overcurrent feedback signal is then the IO2 voltage of metal-oxide-semiconductor output directly being fed back to MCU.
As shown in Figure 4, for overcurrent protection equivalent circuit diagram, the internal resistance value of metal-oxide-semiconductor is generally tens milliohms, and metal-oxide-semiconductor possesses the characteristic of controllable switch, so metal-oxide-semiconductor can be equivalent to switch S add resistance R0, after MCU control switch S is closed, main circuit current can flow through R0, and produces voltage at R0 two ends, according to Ohm's law, electric current is larger, and the voltage difference at R0 two ends is larger, and the voltage that load end obtains is lower; IO2 load positive input terminal voltage being given MCU detects, and when IO2 detects load positive input terminal voltage lower than setting threshold values, be then judged to be MOS overcurrent, MCU need cut off MOS major loop by control IO1, realizes MOS overcurrent protection.
Particular flow sheet as shown in Figure 5, after IO1 control MOS opens, IO2 should fast detecting MOS output voltage continuously, and the voltage detected is compared with setting threshold values, if detect voltage to be less than setting threshold values, control IO1 closes MOS (the IO2 voltage detecting time must not be burned by short guarantee MOS, advises completing voltage in 50uS and reads and compare) immediately; The inaccurate MOS caused protection is by mistake detected for preventing the MOS output voltage caused due to external interference, need again to start in short-term after MOS closes in short-term, and within this start-up time in short-term, again read the voltage of IO2, if this voltage read is higher than setting threshold values, then continue to open MOS; If this voltage read is also lower than setting threshold values, then confirming as load short circuits needs to carry out closedowns MOS and carry out overcurrent protection, until MCU re-powers and resets or again receive the order ability opening MOS and opened by MOS.
It should be noted that, in this article, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise which key element, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.
Apply specific case herein to set forth principle of the present utility model and execution mode, the explanation of above example just understands method of the present utility model and core concept thereof for helping.The above is only preferred implementation of the present utility model, should be understood that, due to the finiteness of literal expression, and objectively there is unlimited concrete structure, for those skilled in the art, under the prerequisite not departing from the utility model principle, some improvement, retouching or change can also be made, also above-mentioned technical characteristic can be combined by rights; These improve retouching, change or combination, or the design of utility model and technical scheme are directly applied to other occasion without improving, and all should be considered as protection range of the present utility model.
Claims (3)
1. a metal-oxide-semiconductor current foldback circuit, the load that it comprises metal-oxide-semiconductor and is attached thereto, is characterized in that, the break-make control end of described metal-oxide-semiconductor is connected with the input/output port one (1) of MCU; The output of described metal-oxide-semiconductor is connected with the input/output port two (2) of MCU.
2. a kind of metal-oxide-semiconductor current foldback circuit according to claim 1, is characterized in that, is provided with resistance R1 between the break-make control end of described metal-oxide-semiconductor and the input/output port one (1) of MCU.
3. a kind of metal-oxide-semiconductor current foldback circuit according to claim 1, is characterized in that, is provided with resistance R2 between the output of described metal-oxide-semiconductor and the input/output port two (2) of MCU.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520636902.4U CN204948040U (en) | 2015-08-24 | 2015-08-24 | A kind of metal-oxide-semiconductor current foldback circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520636902.4U CN204948040U (en) | 2015-08-24 | 2015-08-24 | A kind of metal-oxide-semiconductor current foldback circuit |
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| CN204948040U true CN204948040U (en) | 2016-01-06 |
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| CN201520636902.4U Expired - Fee Related CN204948040U (en) | 2015-08-24 | 2015-08-24 | A kind of metal-oxide-semiconductor current foldback circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680759A (en) * | 2016-03-31 | 2016-06-15 | 广东美的环境电器制造有限公司 | Motor speed regulation device and household appliance |
| CN109799453A (en) * | 2019-01-21 | 2019-05-24 | 湖北航天技术研究院总体设计所 | A kind of switch electromagnetic valve control observation circuit and method |
-
2015
- 2015-08-24 CN CN201520636902.4U patent/CN204948040U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680759A (en) * | 2016-03-31 | 2016-06-15 | 广东美的环境电器制造有限公司 | Motor speed regulation device and household appliance |
| CN105680759B (en) * | 2016-03-31 | 2019-11-29 | 广东美的环境电器制造有限公司 | Motor speed control device and household electrical appliance |
| CN109799453A (en) * | 2019-01-21 | 2019-05-24 | 湖北航天技术研究院总体设计所 | A kind of switch electromagnetic valve control observation circuit and method |
| CN109799453B (en) * | 2019-01-21 | 2021-04-27 | 湖北航天技术研究院总体设计所 | Switch electromagnetic valve control monitoring circuit and method |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160106 Termination date: 20200824 |
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| CF01 | Termination of patent right due to non-payment of annual fee |