CN204946489U - A kind of display panel and display device - Google Patents
A kind of display panel and display device Download PDFInfo
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- CN204946489U CN204946489U CN201520723855.7U CN201520723855U CN204946489U CN 204946489 U CN204946489 U CN 204946489U CN 201520723855 U CN201520723855 U CN 201520723855U CN 204946489 U CN204946489 U CN 204946489U
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- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims description 413
- 239000010408 film Substances 0.000 claims description 76
- 239000010409 thin film Substances 0.000 claims description 54
- 229910052710 silicon Inorganic materials 0.000 claims description 46
- 239000010703 silicon Substances 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 44
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 239000004973 liquid crystal related substance Substances 0.000 claims description 10
- 229920002799 BoPET Polymers 0.000 claims description 8
- 239000005041 Mylar™ Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 7
- 230000036541 health Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 23
- 238000002360 preparation method Methods 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 210000003454 tympanic membrane Anatomy 0.000 description 1
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Abstract
The utility model relates to the technical field of display device, discloses a kind of display panel and display device.This display panel comprises underlay substrate and is arranged on the sonic sensor on described underlay substrate.In technique scheme, by the structure of sonic sensor is formed directly on underlay substrate, make can form sonic sensor while preparing other structures of display panel, improve the preparation efficiency of display device, simultaneously, reduce the thickness of the display device of formation, be convenient to the slimming development of display device.
Description
Technical Field
The utility model relates to display device's technical field especially involves a display panel and display device.
Background
In the existing display devices, such as mobile phones, iPAD and the like, the voice execution function is realized by a microphone chip on a mainboard, and the microphone is manufactured by adopting an MEMS (micro electro mechanical System) process, so that the production flow of the whole display device is relatively complex, and the production efficiency of the display device is influenced. As shown in fig. 1, fig. 1 shows a schematic structural diagram of an acoustic wave sensor in the prior art. The silicon back plate comprises an upper electrode 5, a lower electrode 1, a silicon back plate 2, an electret 3, an upper Mylar sensitive membrane 6, a lower Mylar sensitive membrane 4, a sound hole 7 and the like. The lower electrode 1 is prepared on the silicon backboard 2, the upper and lower mylar sensitive membranes (4, 6) are arranged on two sides of the upper electrode 5, the electret 3 separates the upper electrode 5 from the lower electrode 1, the sound hole 7 is arranged on the electret 3, the lower electrode 1 and the silicon backboard 2, the existing concentrated sound wave sensor needs to be installed on a mainboard, the production efficiency of the display device is affected, and the thinning development of the display device is not facilitated.
SUMMERY OF THE UTILITY MODEL
The utility model provides a display panel and display device for improve display device's production efficiency, the display device's of being convenient for slimming development simultaneously.
The utility model provides a display panel, this display panel include the substrate base plate and set up acoustic wave sensor on the substrate base plate.
In the technical scheme, the structure of the acoustic wave sensor is directly formed on the substrate, so that the acoustic wave sensor can be formed while other structures of the display panel are prepared, the process for preparing the display panel is simplified, the preparation efficiency of the display device is improved, meanwhile, the acoustic wave sensor is directly formed on the substrate, the thickness of the formed display device is reduced, and the display device is convenient to develop in a thin mode.
Preferably, the acoustic wave sensor includes:
a first electrode layer disposed on the substrate base plate;
a silicon backplane disposed on the first electrode layer;
a support layer disposed on the silicon backplane;
a first membrane layer disposed on the support layer;
a second electrode layer disposed on the first membrane layer;
a second membrane layer disposed on the second electrode layer;
and the first film layer and the second film layer are Mylar film layers, and the first electrode layer, the silicon back plate, the supporting layer and the first film layer are provided with communicated sound holes.
Preferably, the display panel further comprises a thin film transistor arranged on the substrate base plate, the thin film transistor comprises a gate electrode layer, a gate insulating layer, a polysilicon active layer and a source drain electrode layer, and the thin film transistor is positioned on the shielding metal layer on the substrate base plate and is electrically isolated from the shielding metal layer through the insulating layer; wherein,
the first electrode layer of the acoustic wave sensor and the shielding metal layer are arranged on the same layer;
the silicon back plate of the acoustic wave sensor and the polycrystalline silicon active layer in the thin film transistor are arranged on the same layer;
the supporting layer of the acoustic wave sensor and the grid electrode insulating layer of the thin film transistor are arranged on the same layer;
the second electrode layer of the acoustic wave sensor and the gate layer of the thin film transistor are arranged on the same layer.
Preferably, the material of the support layer is silicon dioxide or silicon nitride. The thickness of the formed display device is reduced, and the display device is convenient to thin and develop.
Preferably, the first film layer and the second film layer each include a first silicon nitride layer, a polysilicon layer disposed on the first silicon nitride layer, and a second silicon nitride layer disposed on the polysilicon layer.
Preferably, the substrate base plate, the first electrode layer, the silicon back plate, the support layer, the first film layer and the second film layer are all provided with through holes at the same position, and the through holes on the substrate base plate, the first electrode layer, the silicon back plate, the support layer, the first film layer and the second film layer are communicated to form sound holes.
Preferably, the display panel is a liquid crystal display panel, and the liquid crystal display panel further includes a first barrier layer, a first passivation layer, a second barrier layer, a first transparent conductive layer, a second passivation layer, and a second transparent electrode layer located above the second film layer. The safety of the components on the display panel is improved.
Preferably, the display panel further comprises a thin film transistor disposed on the substrate, the thin film transistor comprising a gate electrode layer, a gate insulating layer, an amorphous silicon active layer, and source and drain electrode layers, wherein,
the first electrode layer of the acoustic wave sensor and the gate layer of the thin film transistor are arranged on the same layer;
the silicon back plate of the acoustic wave sensor and the amorphous silicon active layer in the thin film transistor are arranged on the same layer; the second electrode layer of the acoustic wave sensor and the source drain electrode layer of the thin film transistor are arranged on the same layer. The thickness of the formed display device is reduced, and the display device is convenient to thin and develop.
Preferably, the first film layer and the second film layer each include a first silicon nitride layer, an amorphous silicon layer disposed on the first silicon nitride layer, and a second silicon nitride layer disposed on the amorphous silicon layer.
Preferably, the substrate base plate, the first electrode layer, the silicon back plate, the support layer, the first film layer and the second film layer are all provided with through holes at the same position, and the through holes on the substrate base plate, the first electrode layer, the silicon back plate, the support layer, the first film layer and the second film layer are communicated to form sound holes.
Preferably, the display panel is a liquid crystal display panel, and the liquid crystal display panel further includes a passivation layer and a transparent conductive layer disposed on the second film layer.
Preferably, the sound hole is a through hole or a horn hole.
Preferably, the display panel is an OLED display panel.
The utility model also provides a display device, this display device includes above-mentioned arbitrary display panel.
In the technical scheme, the structure of the acoustic wave sensor is directly formed on the substrate, so that the acoustic wave sensor can be formed while other structures of the display panel are prepared, the process for preparing the display panel is simplified, the preparation efficiency of the display device is improved, meanwhile, the acoustic wave sensor is directly formed on the substrate, the thickness of the formed display device is reduced, and the display device is convenient to develop in a thin mode.
Preferably, the acoustic wave sensor of the display panel is used for health monitoring, and the display device further includes:
an alarm device;
and the control device is used for receiving the sound amplitude monitored by the sound wave sensor of the display panel, comparing the sound amplitude with a set threshold value, and controlling the alarm device to give an alarm when the sound amplitude exceeds the set threshold value.
Preferably, the control device is further configured to control the alarm device to give an alarm when the sound amplitude is lower than a set threshold, and control the volume device of the display device to increase the volume to within the set threshold when the user selects to increase.
Drawings
FIG. 1 is a schematic diagram of a prior art acoustic wave sensor;
fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 4 is a flow chart illustrating a process for manufacturing a low temperature polysilicon panel according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an amorphous silicon display panel according to an embodiment of the present invention.
Reference numerals:
1-bottom electrode 2-silicon back plate 3-electret
4-lower Mylar sensitive diaphragm 5-upper electrode 6-upper Mylar sensitive diaphragm
7-sonotrode 10-thin film transistor 11-gate layer
12-gate insulating layer 13-active layer 14-drain electrode
15-source 16-passivation 20-acoustic wave sensor
21-first electrode layer 22-silicon back sheet 23-support layer
24-first membrane layer 25-second membrane layer 26-second electrode layer
27-sound hole 271-first through hole 272-second through hole
273-third via 30-substrate base plate 40-transparent electrode layer
Detailed Description
The display device is easy to be thinned and developed in order to improve the production efficiency of the display device. The embodiment of the utility model provides a display panel and display device. The utility model discloses among the technical scheme, prepare sound wave sensor on display panel through the adoption to make and to form sound wave sensor when forming the structure on the display panel, simplified display device's preparation technology, simultaneously, reduced the thickness of panel, the display device's of being convenient for slimming development. For the convenience of understanding the technical solution of the present invention, the technical solution of the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
As shown in fig. 2 and 3, fig. 2 and 3 show schematic structural diagrams of different display panels according to embodiments of the present invention.
An embodiment of the present invention provides a display panel, which includes a substrate base plate 30 and an acoustic wave sensor 20 disposed on the substrate base plate 30.
In the above embodiment, the structure of the acoustic wave sensor 20 is directly formed on the substrate 30, so that the acoustic wave sensor 20 can be formed while other structures of the display panel are manufactured, thereby simplifying the process for manufacturing the display panel and improving the manufacturing efficiency of the display device, and meanwhile, the acoustic wave sensor 20 is directly formed on the substrate 30, thereby reducing the thickness of the formed display device and facilitating the development of the display device in a thin type.
Here, the acoustic wave sensor 20 includes: a first electrode layer 21 provided on the substrate base plate 30; a silicon back plate 22 disposed on the first electrode layer 21; a support layer 23 disposed on the silicon back-sheet 22; a first membrane layer 24 disposed on the support layer 23; a second electrode layer 26 disposed on the first membrane layer 24; a second film layer 25 disposed on the second electrode layer 26; the first film layer 24 and the second film layer 25 are mylar film layers, and the first electrode layer 21, the silicon back plate 22, the support layer 23 and the first film layer 24 are provided with sound holes 27 which are communicated with each other.
For the convenience of understanding the embodiments of the present invention, the structure thereof will be described in detail below with reference to specific embodiments.
Example 1
The embodiment of the utility model provides a display panel has thin film transistor 10, and this thin film transistor 10 is the top gate structure. The structure includes: an active layer 13, a gate insulating layer 12 disposed on the active layer 13, a gate electrode layer 11 formed on the gate insulating layer 12, an interlayer formed on the gate electrode layer 11, and a source electrode 15 and a drain electrode 14 formed on the interlayer.
As shown in fig. 2, the thin film transistor 10 in the display panel provided in this embodiment includes a gate electrode layer 11, a gate insulating layer 12, a polysilicon active layer, and a source drain electrode layer, where the thin film transistor 10 is located on a shielding metal layer on a substrate and electrically isolated from the shielding metal layer by an insulating layer; wherein,
the first electrode layer 21 of the acoustic wave sensor and the shielding metal layer are arranged on the same layer;
the silicon back plate 22 of the acoustic wave sensor and the polysilicon active layer in the thin film transistor are arranged on the same layer;
the support layer 23 of the acoustic wave sensor is arranged on the same layer as the gate insulating layer 12 of the thin film transistor;
the second electrode layer 26 of the acoustic wave sensor is provided in the same layer as the gate layer 11 of the thin film transistor.
Therefore, the acoustic wave sensor 20 can be formed while the thin film transistor 10 is formed, so that the process of manufacturing the acoustic wave sensor 20 is reduced, the structure and the production steps of producing the display panel are simplified, and meanwhile, as shown in fig. 2, the thin film transistor 10 and the acoustic wave sensor 20 are arranged on the substrate 30 side by side, so that the thickness of the display panel is reduced, and the display device is convenient to be thinned.
In a specific manufacturing process, the material of the support layer 23 is silicon dioxide or silicon nitride.
In addition, the first and second membrane layers 24 and 25 in the acoustic wave sensor 20 each include a first silicon nitride layer disposed on the first silicon oxide layer, a second polysilicon layer disposed on the first silicon nitride layer, and a second silicon nitride layer disposed on the second polysilicon layer.
When the sound hole 27 is formed, through holes are formed in the same positions of the substrate base plate, the first electrode layer 21, the silicon back plate 22, the supporting layer 23, the first film layer 24 and the second film layer 25, and the through holes in the substrate base plate, the first electrode layer 21, the silicon back plate 22, the supporting layer 23, the first film layer 24 and the second film layer 25 are communicated to form the sound hole. Specifically, as shown in fig. 2, the sound holes 27 are disposed on the silicon backplate 22, the first electrode layer 21, the support layer 23 and the first film layer 24, and the specific structure thereof may be a through hole structure or a bell-mouth structure, preferably, the sound holes 27 are in a bell-mouth structure, that is, they include a first through hole 271 formed on the silicon backplate 22, a second through hole 272 formed on the support layer 23, and a third through hole 273 formed on the first film layer 24, and the third through hole 273 is in a bell-mouth shape, and the third through hole 273, the second through hole 272 and the first through hole 271 are through, wherein the first electrode is a metal strip disposed at intervals, and the support layer 23 is filled between two metal strips and contacts with the silicon backplate 22, and the second through hole 272 and the first through hole 271 are located between two metal strips.
In order to improve the safety of the structure on the whole display panel, it is preferable to further include a passivation layer 16 covering the thin film transistor 10 and the acoustic wave sensor 20. Thereby protecting the thin film transistor 10 and the acoustic wave sensor 20. Of course, the display panel provided in the present embodiment further includes a transparent electrode layer 40 disposed on the passivation layer 16 and connected to the source electrode 15.
In addition, the display panel is a liquid crystal display panel, and the liquid crystal display panel further comprises a first barrier layer, a first passivation layer, a second barrier layer, a first transparent conductive layer, a second passivation layer and a second transparent electrode layer which are positioned above the second film layer.
As can be seen from the above description, the display panel provided in this embodiment adopts the arrangement structure in which the thin film transistor 10 and the acoustic wave sensor 20 are arranged side by side, so that the manufacturing process of the display panel is simplified, the acoustic wave sensor 20 can be manufactured when the thin film transistor 10 is manufactured, and the display panel provided in this embodiment reduces the thickness of the display panel because the thin film transistor 10 and the acoustic wave sensor 20 are arranged side by side, which is convenient for the development of the display device in a thin shape.
Example 2
As shown in fig. 3, the display panel provided by this embodiment has a thin film transistor 10, and the thin film transistor 10 has a bottom-gate structure, and specifically includes a gate layer 11, a gate insulating layer 12 disposed on the gate layer 11, an active layer 13 disposed on the gate insulating layer 12, and a source electrode 15 and a drain electrode 14 disposed on the active layer 13. Specifically, the thin film transistor comprises a gate electrode layer 11, a gate insulating layer 12, an amorphous silicon active layer and a source drain electrode layer, wherein the first electrode layer 21 of the acoustic wave sensor and the gate electrode layer 11 of the thin film transistor are arranged on the same layer;
the silicon back plate 22 of the acoustic wave sensor and the amorphous silicon active layer in the thin film transistor are arranged in the same layer; the second electrode layer 26 of the acoustic wave sensor and the source/drain electrode layer of the thin film transistor are arranged on the same layer.
Further, the support layer 23 includes a silicide layer provided on the same layer as the active layer 13 forming the thin film transistor 10 and a silicon oxide layer located above the silicide layer; that is, when the active layer 13 is prepared, the silicide layer located above the first electrode is a part of the support layer 23, and a silicon oxide layer is provided on the support layer 23; the silicide and the silicon oxide layer together serve as a support layer 23;
the second electrode layer is provided in the same layer as the source electrode 15 and the drain electrode 14 of the thin film transistor 10.
The first film layer and the second film layer respectively comprise a first silicon nitride layer, an amorphous silicon layer arranged on the first silicon nitride layer, and a second silicon nitride layer arranged on the amorphous silicon layer.
Through the structure, when the thin film transistor 10 is manufactured, the acoustic wave sensor 20 is synchronously manufactured, so that the process for manufacturing the display panel is reduced, the manufacturing efficiency of the display panel is improved, and meanwhile, the thickness of the display panel is reduced due to the fact that the thin film transistor 10 and the acoustic wave sensor 20 are arranged side by side, and further the thin development of the display device is facilitated.
When the sound hole 27 is formed, through holes are formed in the same positions of the substrate base plate, the first electrode layer 21, the silicon back plate 22, the supporting layer 23, the first film layer 24 and the second film layer 25, and the through holes in the substrate base plate, the first electrode layer 21, the silicon back plate 22, the supporting layer 23, the first film layer 24 and the second film layer 25 are communicated to form the sound hole. Specifically, the sound hole 27 is disposed on the silicon backplate 22, the first electrode layer, the support layer 23 and the first film layer 24, and the specific structure thereof may be a through hole structure, or may also be a bell mouth structure, as shown in fig. 3, the sound hole 27 is a through hole structure, that is, it includes a first through hole 271 formed on the silicon backplate 22 and the support layer 23, a second through hole 272 formed on the first film layer 24, the second through hole 272 and the first through hole 271 are through, wherein the first electrode is a metal strip disposed at an interval, the support layer 23 is filled between two metal strips and is in contact with the silicon backplate 22, and the second through hole 272 and the first through hole 271 are located between two metal strips.
As a preferable mode, in order to improve the safety of the structure on the whole display panel, it is preferable that a passivation layer 16 is further included to cover the thin film transistor 10 and the acoustic wave sensor 20. Thereby protecting the thin film transistor 10 and the acoustic wave sensor 20. Of course, the display panel provided in the present embodiment further includes a transparent electrode layer 40 disposed on the passivation layer 16 and connected to the source electrode 15.
In addition, the display panel provided by the embodiment is a liquid crystal display panel, and the liquid crystal display panel further includes a passivation layer and a transparent conductive layer disposed on the second film layer.
More specifically, the display panel is an OLED display panel.
In order to further understand the display panel provided by the embodiment of the present invention, the embodiment of the present invention further provides a method for manufacturing a display panel, the method includes the following steps:
forming a first electrode layer on a substrate;
forming a silicon back plate on the first electrode layer;
forming a support layer on the silicon backplane;
forming a first membrane layer on the support layer;
forming through sound holes on the formed first film layer, the first electrode layer, the supporting layer and the silicon back plate;
forming a second electrode layer on the first film layer;
and forming a second film layer on the second electrode layer.
According to the method, the acoustic wave sensor is directly prepared on the substrate, so that the acoustic wave sensor can be formed while other structures of the display panel are prepared, the process for preparing the display panel is simplified, the preparation efficiency of the display device is improved, meanwhile, the acoustic wave sensor is directly formed on the substrate, the thickness of the formed display device is reduced, and the display device is convenient to develop in a thin mode.
Specifically, the method comprises the following steps: forming a first electrode layer on a substrate; forming a silicon back plate on the first electrode layer; forming a support layer on the silicon backplane; forming a first membrane layer on the support layer; forming through sound holes on the formed first film layer, the first electrode layer, the supporting layer and the silicon back plate; forming a second electrode layer on the first film layer; and forming a second film layer on the second electrode layer.
To facilitate an understanding of the present method, it is described in detail below with reference to specific examples.
Example one
The method provided in this embodiment is directed to the method for manufacturing the display panel provided in embodiment 1 above. As shown in fig. 4, the specific preparation steps include:
001, forming a first through hole at a fixed position of a glass substrate base plate;
002, forming a buffer layer on the glass substrate base plate;
step 003, forming a first electrode layer on the buffer layer;
specifically, the first electrode layer comprises a plurality of metal strip electrodes which are arranged at intervals.
Step 004, forming a silicon nitride layer on the first electrode layer;
specifically, the silicon nitride layer is used as an active layer on the thin film transistor and a silicon backboard of the acoustic wave sensor.
005, forming a gate insulating layer on the silicon nitride layer;
specifically, the gate insulating layer is simultaneously used as an electret of the acoustic wave sensor, and a second through hole is formed by utilizing photoetching development; the gate insulating layer is a first silicon oxide layer.
Step 006, forming a first film layer on the gate insulating layer;
specifically, the formed first film layer is located above the first electrode; and the specifically formed first film layer comprises: a first silicon nitride layer on the first silicon oxide layer, a second polysilicon layer disposed on the first silicon nitride layer, and a second silicon nitride layer disposed on the second polysilicon layer. And forming a third through hole by a photolithography process. And the first through hole, the second through hole and the third through hole form a sound hole.
Step 007, forming a gate electrode layer metal layer on the gate insulating layer, wherein the gate electrode layer metal layer is simultaneously used as a second electrode of the sensor;
specifically, a gate electrode layer metal layer is formed on the gate insulating layer, and the formed gate electrode layer metal layer is etched according to the structure of the thin film transistor and the structure of the acoustic wave sensor to form a gate electrode layer and a second electrode.
Step 008, forming a second film layer above the first electrode layer.
Specifically, the structure of the second film layer formed therein is the same as that of the first film layer, that is, a polysilicon layer is sandwiched between two silicon oxide layers.
Step 009 of forming an isolation layer on the formed second film layer;
and 010, forming a source electrode and a drain electrode on the formed isolation layer.
And step 011, covering a passivation layer on the formed source electrode and the drain electrode.
Specifically, the passivation layer covers the thin film transistor and the acoustic wave sensor.
And step 012, forming a transparent electrode on the formed passivation layer, wherein the transparent electrode is connected with the source electrode.
Example II,
The display panel provided in this embodiment is directed to the display panel provided in embodiment 2, and the display panel adopts a bottom gate structure. As shown in fig. 5, the preparation process is as follows:
021, forming a through hole at a fixed position of the glass substrate base plate;
022, forming a gate electrode layer metal layer on the substrate, the gate electrode layer metal layer simultaneously serving as a first electrode;
specifically, a gate electrode layer metal layer is formed on the substrate, and the formed gate electrode layer metal layer is etched according to the structure of the thin film transistor and the structure of the acoustic wave sensor to form a gate electrode layer and a second electrode.
023, forming an active layer on the gate electrode metal layer;
the method specifically comprises the following steps: depositing a-Si; depositing n + a-Si on the formed a-Si, and forming an active layer through a photolithography process;
and 024, forming a silicon oxide layer on the formed active layer, and forming a supporting layer above the first electrode by an etching process.
025, forming a first film layer on the formed support layer;
specifically, the first film layer is formed by sandwiching a polysilicon layer between two silicon oxide layers.
026, forming source and drain electrode layers, and forming source and drain electrodes and the second electrode of the acoustic wave sensor by etching process.
Step 027, forming a second film layer on the formed second electrode layer;
specifically, the structure of the second film layer is the same as that of the first film layer, namely, the second film layer is formed by sandwiching a polysilicon layer between two silicon oxide layers.
Step 028, forming a passivation layer on the formed second film layer;
specifically, a passivation layer is formed on the formed second film layer, and the passivation layer covers the thin film transistor. Forming a via hole by a micro-lithography process;
029, forming a transparent electrode, wherein the transparent electrode is a pixel electrode, and the pixel electrode passes through the via hole and is connected with the source electrode.
As can be seen from the display panel manufacturing methods of the first and second embodiments, in the display panel manufacturing method provided in this embodiment, the acoustic wave sensor is directly manufactured on the substrate, so that the acoustic wave sensor can be formed while manufacturing other structures of the display panel, thereby simplifying the process for manufacturing the display panel and improving the manufacturing efficiency of the display device.
The embodiment of the utility model provides a still provide a display device, this display device includes the display panel of above-mentioned arbitrary item.
In the above embodiment, the structure of the acoustic wave sensor is directly formed on the substrate, so that the acoustic wave sensor can be formed while other structures of the display panel are prepared, the process for preparing the display panel is simplified, the preparation efficiency of the display device is improved, and meanwhile, the acoustic wave sensor is directly formed on the substrate, so that the thickness of the formed display device is reduced, and the display device is convenient to develop in a thin manner.
Preferably, the acoustic wave sensor of the display panel is used for health monitoring, and the display device further includes:
an alarm device;
and the control device is used for receiving the sound amplitude monitored by the sound wave sensor of the display panel, comparing the sound amplitude with a set threshold value, and controlling the alarm device to give an alarm when the sound amplitude exceeds the set threshold value.
Specifically, when the display device monitors that the amplitude of the sound is larger than a threshold set by a system, a reminding instruction is sent to remind a user that the current sound volume is higher than a safe volume threshold, the sound volume at the moment can damage the eardrum, and hearing can be affected in the environment of the sound volume if the sound volume is leaked for a long time.
The health monitoring and reminding functions of the display panel integrated with the acoustic wave sensor of the utility model refer to monitoring the volume;
the control device is also used for controlling the alarm device to give an alarm when the sound amplitude is lower than a set threshold value, and controlling the volume device of the display device to increase the volume to be within the set threshold value when the user selects to increase the volume.
Specifically, when the display device monitors that the amplitude of the sound is lower than a threshold set by the system, a reminding instruction is also sent to remind a user that the current sound volume is lower than the lowest volume threshold for listening of the user and whether the system needs to automatically adjust the volume, and if the system needs to adjust the volume, the system can automatically adjust the volume to a safe threshold range according to the instruction of the user; if an instruction that the user does not need to adjust the volume is received, the system ignores the reminding.
The utility model also provides a display device's health monitoring method, including following step:
the sound wave amplitude of the display device is monitored through a sound wave sensor of the display device, the sound amplitude is compared with a set threshold value through a control device, and when the sound amplitude exceeds the set threshold value, the alarm device is controlled to give an alarm.
In the method, the sound wave sensor is used for detecting the sound and giving an alarm when the sound exceeds the set threshold value, so that the using effect of a user is improved.
And when the sound amplitude is lower than a set threshold value, controlling the alarm device to give an alarm, and when the user selects to increase, controlling the volume device of the display device to increase the volume to be within the set threshold value.
In the method, the sound is detected by the sound wave sensor, and the size of the sound is controlled by the control device, so that the use of a user is facilitated.
It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (16)
1. A display panel is characterized by comprising a substrate base plate and an acoustic wave sensor arranged on the substrate base plate, wherein the acoustic wave sensor is used for monitoring acoustic waves.
2. The display panel of claim 1, wherein the acoustic wave sensor comprises:
a first electrode layer disposed on the substrate base plate;
a silicon backplane disposed on the first electrode layer;
a support layer disposed on the silicon backplane;
a first membrane layer disposed on the support layer;
a second electrode layer disposed on the first membrane layer;
a second membrane layer disposed on the second electrode layer;
and the first film layer and the second film layer are Mylar film layers, and the first electrode layer, the silicon back plate, the supporting layer and the first film layer are provided with communicated sound holes.
3. The display panel of claim 2, further comprising a thin film transistor disposed on the substrate base, the thin film transistor comprising a gate layer, a gate insulating layer, a polysilicon active layer, a source drain electrode layer, the thin film transistor being disposed on a barrier metal layer on the substrate base and electrically isolated from the barrier metal layer by the insulating layer; wherein,
the first electrode layer of the acoustic wave sensor and the shielding metal layer are arranged on the same layer;
the silicon back plate of the acoustic wave sensor and the polycrystalline silicon active layer in the thin film transistor are arranged on the same layer;
the supporting layer of the acoustic wave sensor and the gate insulating layer of the thin film transistor are arranged on the same layer;
the second electrode layer of the acoustic wave sensor and the gate layer of the thin film transistor are arranged on the same layer.
4. The display panel according to claim 3, wherein a material of the support layer is silicon dioxide or silicon nitride.
5. The display panel of claim 4, wherein the first and second film layers each comprise a first silicon nitride layer, a polysilicon layer disposed on the first silicon nitride layer, and a second silicon nitride layer disposed on the polysilicon layer.
6. The display panel according to claim 5, wherein through holes are formed in the substrate base plate, the first electrode layer, the silicon back plate, the support layer, the first film layer and the second film layer at the same position, and the through holes in the substrate base plate, the first electrode layer, the silicon back plate, the support layer, the first film layer and the second film layer are communicated to form a sound hole.
7. The display panel of claim 6, wherein the display panel is a liquid crystal display panel, and further comprising a first barrier layer, a first passivation layer, a second barrier layer, a first transparent conductive layer, a second passivation layer, and a second transparent electrode layer over the second film layer.
8. The display panel of claim 2, further comprising a thin film transistor disposed on the substrate, the thin film transistor comprising a gate electrode layer, a gate insulating layer, an amorphous silicon active layer, a source drain electrode layer, wherein,
the first electrode layer of the acoustic wave sensor and the gate layer of the thin film transistor are arranged on the same layer;
the silicon back plate of the acoustic wave sensor and the amorphous silicon active layer in the thin film transistor are arranged on the same layer; the second electrode layer of the acoustic wave sensor and the source drain electrode layer of the thin film transistor are arranged on the same layer.
9. The display panel of claim 8, wherein the first and second film layers each comprise a first silicon nitride layer, an amorphous silicon layer disposed on the first silicon nitride layer, and a second silicon nitride layer disposed on the amorphous silicon layer.
10. The display panel according to claim 8, wherein through holes are formed in the substrate base plate, the first electrode layer, the silicon back plate, the support layer, the first film layer and the second film layer at the same position, and the through holes in the substrate base plate, the first electrode layer, the silicon back plate, the support layer, the first film layer and the second film layer are communicated to form a sound hole.
11. The display panel of claim 8, wherein the display panel is a liquid crystal display panel, and further comprising a passivation layer and a transparent conductive layer disposed on the second film layer.
12. The display panel according to claims 1 to 11, wherein the sound holes are through holes or speaker holes.
13. The display panel according to claims 1 to 11, wherein the display panel is an OLED display panel.
14. A display device comprising the display panel according to any one of claims 1 to 13.
15. The display device of claim 14, wherein the acoustic wave sensor of the display panel is used for health monitoring, the display device further comprising:
an alarm device;
and the control device is used for receiving the sound amplitude monitored by the sound wave sensor of the display panel, comparing the sound amplitude with a set threshold value, and controlling the alarm device to give an alarm when the sound amplitude exceeds the set threshold value.
16. The display device of claim 15, wherein the control means is further configured to control the alarm means to sound an alarm if the sound amplitude is below a set threshold, and to control the volume means of the display device to increase the volume to within the set threshold if the user selects to increase.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105182583A (en) * | 2015-09-17 | 2015-12-23 | 京东方科技集团股份有限公司 | Display panel, preparation method of display panel, display device and health monitoring method of display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105182583A (en) * | 2015-09-17 | 2015-12-23 | 京东方科技集团股份有限公司 | Display panel, preparation method of display panel, display device and health monitoring method of display device |
| WO2017045343A1 (en) * | 2015-09-17 | 2017-03-23 | 京东方科技集团股份有限公司 | Display panel and preparation method therefor, and display device and health monitoring method thereof |
| US9961427B2 (en) | 2015-09-17 | 2018-05-01 | Boe Technology Group Co., Ltd. | Display panel and preparation method therefor, and display device and health monitoring method thereof |
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