CN204928758U - Operation transconductance amplifier that gain promoted - Google Patents
Operation transconductance amplifier that gain promoted Download PDFInfo
- Publication number
- CN204928758U CN204928758U CN201520763260.4U CN201520763260U CN204928758U CN 204928758 U CN204928758 U CN 204928758U CN 201520763260 U CN201520763260 U CN 201520763260U CN 204928758 U CN204928758 U CN 204928758U
- Authority
- CN
- China
- Prior art keywords
- oxide
- semiconductor
- type metal
- drain electrode
- meet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model discloses an operation transconductance amplifier that gain promoted, the constant current source source concatenates differential input in proper order by offseting, the load current mirror, cascode output stage and adjustable supplementary differential pair constitute, wherein differential input is by 4 PMOS pipe M1a, M2a, M1b and M2b constitute, the load current mirror is by 6 NMOS pipe M3, M4, M5a, M6a, M5b and M6b constitute, the cascode output stage comprises to M12 6 MOS pipe M7, adjustable supplementary differential pair is by M13, M14 and M15 constitute. The intrinsic contradictions between gain in the circuit, bandwidth, the consumption etc. Are thoroughly solved to adjustable supplementary differential pair that the reuse of electric current and output stage increase, the utility model discloses a little less than receiving output voltage to influence very, can not introduce extra limit, simulation result shows the same quiescent power dissipation, the utility model discloses gain, bandwidth all realize the multiplication, still have can finely tune, the characteristics of high accuracy, be applicable to systems such as communication, electronic measurement and automatic control.
Description
Technical field
The utility model relates to a kind of operational amplifier, is specifically related to the operation transconductance amplifier that a kind of gain promotes.
Background technology
Operational amplifier is widely used in the analog circuits such as power supply, analog to digital converter, filter.Along with the decline of supply voltage and reducing further of process, transistor channel length constantly reduces, and causes transistor intrinsic gain also constantly to reduce, and designs high-gain amplifier under these conditions and faces larger challenge.In prior art, adopt two-stage or three-stage cascade, a low-frequency pole while each cascade of this mode brings high-gain, can be introduced, produce negative phase shift and degeneration phase margin.In order to the stability of keeping system, the miller-compensated principle of general employing, the bandwidth performance of the compensation meeting serious degradation amplifier that this limit is separated.It is that another improves the method for gain that bootstrapping gain improves output impedance, although it can not limit the bandwidth performance of amplifier, needs to consume more power consumption.
Within 2007, R.Assaad is published in one section of " Enhancinggeneralperformanceoffoldedcascodeamplifierbyrec yclingcurrent " (RFC operational amplifier) by name at ELECTRONICSLETTERS, it is a kind of composite Foldable cascade operational amplifier with low-power consumption, current multiplexing technology is applied in middle traditional folded cascode Op Amp circuit, its circuit is mainly biased constant current source and is connected in series Differential Input, load current mirror and the adjustable auxiliary differential pair of cascade output stage successively, and its scheme as shown in Figure 1.Although current multiplexing technology improves the utilance of electric current in circuit, but this scheme is the increase that cost realizes mutual conductance by the phase margin of sacrifice circuit, gain promotes also little, under existing deep submicron process, the gain of RFC operational amplifier does not reach the precision required for reality far away, is difficult to extensive use
For solving the intrinsic contradictions in operation amplifier circuit between gain, bandwidth, power consumption etc., needing to break traditions structure, designing a kind of high-gain and the high-speed high performance operational amplifier taken into account.
Utility model content
Technical problem to be solved in the utility model is to provide the operation transconductance amplifier that a kind of gain promotes.Biased constant current source is connected in series Differential Input, load current mirror and cascade output stage successively, also has adjustable auxiliary differential pair, this operation transconductance amplifier affects very weak by output voltage, extra limit can not be introduced, effectively improve output impedance and the gain of operational amplifier, realize high accuracy, high-speed computation is amplified.
The operation transconductance amplifier that a kind of gain of the utility model design promotes comprises biased constant current source and the Differential Input be connected in series successively, load current mirror and cascade output stage, and wherein biased constant current source is P type metal-oxide-semiconductor M
0source electrode meet power vd D, M
0grid meet bias voltage V
bias; Differential Input is by 4 P type metal-oxide-semiconductor M
1a, M
2a, M
1band M
2bform, load current mirror is by 6 N-type metal-oxide-semiconductor M
3, M
4, M
5a, M
6a, M
5band M
6bform, cascade output stage is by 2 N-type metal-oxide-semiconductor M
7, M
10and 4 P type metal-oxide-semiconductor M
8, M
9, M
11and M
12form.
Differential input stage P type metal-oxide-semiconductor M
1a, M
2a, M
1band M
2bsource electrode meet P type metal-oxide-semiconductor M respectively
0drain electrode.N-type metal-oxide-semiconductor M
3drain electrode meets P type metal-oxide-semiconductor M respectively
2bdrain electrode, N-type metal-oxide-semiconductor M
5aand M
5bgrid, N-type metal-oxide-semiconductor M
3source electrode meet N-type metal-oxide-semiconductor M
5bdrain electrode, N-type metal-oxide-semiconductor M
4drain electrode meets P type metal-oxide-semiconductor M respectively
1bdrain electrode, N-type metal-oxide-semiconductor M
6aand M
6bgrid, N-type metal-oxide-semiconductor M
4source electrode meet N-type metal-oxide-semiconductor M
6bdrain electrode, N-type metal-oxide-semiconductor M
3, M
4grid meet bias voltage V
b1, N-type metal-oxide-semiconductor M
5a, M
5b, M
6aand M
6bsource electrode respectively ground connection.The N-type metal-oxide-semiconductor M of cascade output stage
7drain electrode meet P type metal-oxide-semiconductor M
8drain electrode, connect the second output end vo ut of cascade output stage simultaneously
-, cascade output stage P type metal-oxide-semiconductor M
8source electrode meet P type metal-oxide-semiconductor M
9drain electrode, N-type metal-oxide-semiconductor M
10drain electrode meet P type metal-oxide-semiconductor M respectively
11drain electrode, connect the first output end vo ut of cascade output stage simultaneously
+, P type metal-oxide-semiconductor M
11source electrode meet P type metal-oxide-semiconductor M
12drain electrode, N-type metal-oxide-semiconductor M
7, M
10grid meet bias voltage V respectively
b1, P type metal-oxide-semiconductor M
8, M
11grid meet bias voltage V respectively
b2, P type metal-oxide-semiconductor M
9, M
12grid meet common mode feedback voltage CMFB, P type metal-oxide-semiconductor M
9, M
12source electrode meet power vd D respectively.
The operation transconductance amplifier that gain of the present utility model promotes also comprises adjustable auxiliary differential pair, and adjustable auxiliary differential is to by P type metal-oxide-semiconductor M
13, M
14and M
15form.P type metal-oxide-semiconductor M
13grid meet P type metal-oxide-semiconductor M respectively
1a, M
14drain electrode, N-type metal-oxide-semiconductor M
5adrain electrode and N-type metal-oxide-semiconductor M
7source electrode, P type metal-oxide-semiconductor M
14grid meet P type metal-oxide-semiconductor M respectively
2a, M
13drain electrode, N-type metal-oxide-semiconductor M
6adrain electrode and N-type metal-oxide-semiconductor M
10source electrode, P type metal-oxide-semiconductor M
13, M
14source electrode meet P type metal-oxide-semiconductor M
15drain electrode, P type metal-oxide-semiconductor M
15source electrode meet power vd D.
4 P type metal-oxide-semiconductor M of described Differential Input
1a, M
2a, M
1band M
2breceive differential voltage signal, be converted into 2 couples of current mirror N-type metal-oxide-semiconductor M described in pulse current injectingt
5b-M
5aand M
6b-M
6ain, current mirror M
6b-M
6athe electric current exported sends into the output branch road M of cascade output stage
10, M
11, M
12in, form output voltage V
out +; Current mirror M
5b-M
5athe electric current exported sends into another output branch road M of cascade output stage
7, M
8, M
9in, form output voltage V
out -.Transmission between current mirror realizes current multiplication, finally realizes the multiplication of operation transconductance amplifier mutual conductance.
Described current mirror M
5b-M
5a, M
6b-M
6adimension scale identical, i.e. M
5asize and M
5bsize be in a ratio of K, same M
6asize and M
6bsize compare also for the span of K, K is 2 ~ 5.
Metal-oxide-semiconductor M
5awith output branch road M
7, M
8, M
9form cascade output stage, increase V
out -end output impedance, metal-oxide-semiconductor M
6awith output branch road M
10, M
11, M
12form another cascade output stage, increase V
out +end output impedance.
The P type metal-oxide-semiconductor M that adjustable auxiliary differential is right
13drain electrode output voltage signal and P type metal-oxide-semiconductor M
14grid directly connect, P type metal-oxide-semiconductor M
13gate voltage signal control P type metal-oxide-semiconductor M
14electric current, metal-oxide-semiconductor M
14form negative resistance; Similarly, P type metal-oxide-semiconductor M
14drain electrode output voltage signal and P type metal-oxide-semiconductor M
13grid directly connect, P type metal-oxide-semiconductor M
14gate voltage signal control P type metal-oxide-semiconductor M
13electric current, metal-oxide-semiconductor M
13form negative resistance, M
13, M
14output impedance and the output impedance of cascade together form the output impedance of this operation transconductance amplifier.
Differential signal input after, signal through 2 paths to output, Article 1 path: through M
1agate input voltage signal becomes current signal and reaches M
5adrain terminal, then through the output branch road M of cascade
7, M
8, M
9to output, the mutual conductance of this paths is metal-oxide-semiconductor M
1amutual conductance g
m1a; Article 2 path: through M
1bgate input voltage signal becomes current signal and reaches M
4drain terminal, inject M
6b, through current mirror M
6a-M
6aafter copy to M
6a, realize current multiplication K doubly, through the output branch road M of cascode stage
10, M
11, M
12to output, the mutual conductance of this paths is metal-oxide-semiconductor M
1bmutual conductance g
m1bk doubly.
The metal-oxide-semiconductor M of described Differential Input
1a, M
1bmeasure-alike, the mutual conductance of the two is directly proportional to its channel width-over-length ratio W/L, therefore the equal i.e. g of the mutual conductance of the two
m1b=g
m1a, the overall mutual conductance of the utility model operation transconductance amplifier is G=g
m1a+ Kg
m1b=(1+K) g
m1a.
As the M that adjustable auxiliary differential is right
13grid current potential reduce, i.e. metal-oxide-semiconductor M
14drain voltage reduce equally, metal-oxide-semiconductor M
14drain electrode and source electrode between voltage rise, variable quantity be+△ vd
dS, M
13grid current potential reduce cause M
13current potential, the metal-oxide-semiconductor M of drain electrode
14grid potential raises, metal-oxide-semiconductor M
14effective input voltage signal V of grid
gSreduce, cause metal-oxide-semiconductor M
14it is-△ i that output current reduces variable quantity
dS, the metal-oxide-semiconductor M that auxiliary differential is right
14output impedance r
o14=+△ vd
dS/ (-△ i
dS) <0 is negative resistance.Same M
14grid current potential reduce, can M be analyzed as stated above
13output impedance be also negative resistance.Ignore the channel modulation effect of metal-oxide-semiconductor, M
14conductance (inverse of impedance) be expressed as g
m14; During small-signal analysis output impedance, metal-oxide-semiconductor M
14with M
5a, M
1aparallel connection, metal-oxide-semiconductor M
14output impedance r
o14for negative value ,-1/g can be used
m14represent, the output impedance of the utility model operation transconductance amplifier is expressed as
R
out≈g
m7r
o7(r
o1a||r
o5a||r
o14)||g
m8r
o8r
o9。
Work as M
7, M
8mutual conductance equal, output impedance is equal, i.e. g
m8=g
m7, r
o8=r
o7, the output impedance of the utility model operation transconductance amplifier is expressed as
R
out≈g
m7/[g
o7(g
o1a+g
o5a+g
o9-g
m14)]，
Wherein g
mi, r
oiand g
oibe respectively i-th metal-oxide-semiconductor M in circuit
imutual conductance, output impedance and output conductance, g
oi=1/r
oi.
Increase g
m14ensure 0≤g simultaneously
m14<g
o1a+ g
o5a+ g
o9, just can improve output impedance R
out, gain, simultaneity factor is stable leaves residual value.
Optimum design gets g
m14=0.85 (g
o1a+ g
o5a+ g
o9), output impedance R
outrelatively do not add g
m14increase 6.67 times, 16.5dB gain can be realized and promote.
In order to eliminate the error of output gain, P type metal-oxide-semiconductor M
15grid meet adjustable bias voltage V
t, the mutual conductance g that adjustable auxiliary differential is right
mwith its M
13, M
14the electric current I flow through
tbe directly proportional, simultaneously electric current
namely the g that adjustable auxiliary differential is right
m=f (V
t), be V
tfunction, wherein μ
pelectron mobility, C
oxfor unit area gate capacitance, (W/L)
15p type metal-oxide-semiconductor M
15channel width-over-length ratio, V
thpp type metal-oxide-semiconductor M
15cut-in voltage.Due to the impact of metal-oxide-semiconductor mismatch and process corner, the gain of output can depart from pre-set level, thus amplifier is exported produce error.Fine setting adjustable bias voltage V
t, control metal-oxide-semiconductor M
15flow to M
13, M
14the ratio of electric current, thus control M
13, M
14the size of negative resistance.Namely by fine setting V
t, realize error free amplification.Adjustable bias voltage V
tadjustable range be ± 1mV.
Compared with prior art, the advantage of the operation transconductance amplifier that a kind of gain of the utility model promotes is: 1,1 pair of Differential Input metal-oxide-semiconductor of traditional collapsible amplifier is divided into 2 pairs of Differential Input metal-oxide-semiconductors, receives the output signal of 2 pairs of Differential Input metal-oxide-semiconductors with 2 pairs of load current mirrors simultaneously; 2 transistors of such cascade output stage are not only just as constant-current source (effect as in folded operational amplifier), effectively can utilize electric current, make the mutual conductance of this operation transconductance amplifier realize multiplication; The cascodes of 2, cascade output stage adds 1 to adjustable auxiliary differential pair, this operation transconductance amplifier is affected by output voltage very weak, and extra limit can not be introduced; 3, realize multipath operation amplifier, the large constant-current source improving traditional cascade output is driving tube, and not only the effective mutual conductance increasing whole amplifier, also promotes the transient state slew rate of large-signal; 4, under same quiescent dissipation, the gain of this operation transconductance amplifier, bandwidth sum common-mode rejection ratio all realize multiplication, under 1.2V working power, adopt 90nmCOMSTSMC technique to carry out Spectre simulation to it, result shows, this operation transconductance amplifier is under power consumption 1.05mW condition, DC open-loop gain is 72.7dB, and unity gain bandwidth is 217.9MHz; Compare RFC structure amplifier, not only gain improves 19dB, also and also to have adjustability high, reduces the impact of technique, is applicable to communication, electronic measurements, and the system such as automatic control.Effectively improve output impedance and the gain of operation transconductance amplifier, realize the operation amplifier of high accuracy, low-power consumption, large broadband, high-gain, high speed, solve conventional operational amplifiers gain under current deep submicron process low, bandwidth performance degenerate, power consumption high problem.
Accompanying drawing explanation
Fig. 1 is the electrical block diagram of comparative example composite Foldable cascade operational amplifier.
Fig. 2 is the operation transconductance amplifier embodiment electrical block diagram that this gain promotes.
Fig. 3 is the ac small signal amplitude frequency diagram of the present embodiment and comparative example.
Fig. 4 is the ac small signal phase frequency figure of the present embodiment and comparative example.
Embodiment
Traditional composite Foldable cascade operational amplifier, namely RFC operational amplifier as a comparison case, and its circuit structure as shown in Figure 1.Comprise biased constant current source and the Differential Input be connected in series successively, load current mirror and cascade output stage.
As shown in Figure 2, biased constant current source is connected in series Differential Input, load current mirror, cascade output stage and adjustable auxiliary differential pair to the operation transconductance amplifier embodiment that this gain promotes successively.Wherein biased constant current source is P type metal-oxide-semiconductor M
0, its source electrode meets power vd D, M
0grid meet bias voltage V
bias; Differential Input is by 4 P type metal-oxide-semiconductor M
1a, M
2a, M
1band M
2bform, load current mirror is by 6 N-type metal-oxide-semiconductor M
3, M
4, M
5a, M
6a, M
5band M
6bform, cascade output stage is by 2 N-type metal-oxide-semiconductor M
7, M
10and 4 P type metal-oxide-semiconductor M
8, M
9, M
11and M
12form, adjustable auxiliary differential is to by P type metal-oxide-semiconductor M
13, M
14and M
15form.
Differential input stage P type metal-oxide-semiconductor M
1a, M
2a, M
1band M
2bsource electrode meet P type metal-oxide-semiconductor M respectively
0drain electrode.N-type metal-oxide-semiconductor M
3drain electrode meets P type metal-oxide-semiconductor M respectively
2bdrain electrode, N-type metal-oxide-semiconductor M
5aand M
5bgrid, N-type metal-oxide-semiconductor M
3source electrode meet N-type metal-oxide-semiconductor M
5bdrain electrode, N-type metal-oxide-semiconductor M
4drain electrode meets P type metal-oxide-semiconductor M respectively
1bdrain electrode, N-type metal-oxide-semiconductor M
6aand M
6bgrid, N-type metal-oxide-semiconductor M
4source electrode meet N-type metal-oxide-semiconductor M
6bdrain electrode, N-type metal-oxide-semiconductor M
3, M
4grid meet bias voltage V
b1, N-type metal-oxide-semiconductor M
5a, M
5b, M
6aand M
6bsource electrode respectively ground connection.The N-type metal-oxide-semiconductor M of cascade output stage
7drain electrode meet P type metal-oxide-semiconductor M
8drain electrode, connect the second output end vo ut of cascade output stage simultaneously
-, cascade output stage P type metal-oxide-semiconductor M
8source electrode meet P type metal-oxide-semiconductor M
9drain electrode, N-type metal-oxide-semiconductor M
10drain electrode meet P type metal-oxide-semiconductor M respectively
11drain electrode, connect the first output end vo ut of cascade output stage simultaneously
+, P type metal-oxide-semiconductor M
11source electrode meet P type metal-oxide-semiconductor M
12drain electrode, N-type metal-oxide-semiconductor M
7, M
10grid meet bias voltage V respectively
b1, P type metal-oxide-semiconductor M
8, M
11grid meet bias voltage V respectively
b2, P type metal-oxide-semiconductor M
9, M
12grid meet common mode feedback voltage CMFB, P type metal-oxide-semiconductor M
9, M
12source electrode meet power vd D respectively.
Adjustable auxiliary differential is to P type metal-oxide-semiconductor M
13grid meet P type metal-oxide-semiconductor M respectively
1a, M
14drain electrode, N-type metal-oxide-semiconductor M
5adrain electrode and N-type metal-oxide-semiconductor M
7source electrode, P type metal-oxide-semiconductor M
14grid meet P type metal-oxide-semiconductor M respectively
2a, M
13drain electrode, N-type metal-oxide-semiconductor M
6adrain electrode and N-type metal-oxide-semiconductor M
10source electrode, P type metal-oxide-semiconductor M
13, M
14source electrode meet P type metal-oxide-semiconductor M
15drain electrode, P type metal-oxide-semiconductor M
15source electrode meet power vd D, M
15grid meet adjustable bias voltage V
t.
This routine current mirror M
5awith M
5bsize be in a ratio of 3, same M
6awith M
6bsize to compare also be 3.
This routine Differential Input metal-oxide-semiconductor M
1a, M
1bmeasure-alike.
As shown in Figure 2, as the M that adjustable auxiliary differential is right
13grid current potential reduce, namely in Fig. 2 A point current potential reduction, metal-oxide-semiconductor M
14drain voltage reduce equally, metal-oxide-semiconductor M
14drain electrode and source electrode between voltage rise, variable quantity be+△ vd
dS, M
13grid current potential reduce cause M
13current potential, the metal-oxide-semiconductor M of drain electrode
14grid potential raises, metal-oxide-semiconductor M
14effective input voltage signal V of grid
gSreduce, cause metal-oxide-semiconductor M
14it is-△ i that output current reduces variable quantity
dS, the metal-oxide-semiconductor M that auxiliary differential is right
14output impedance r
o14=+△ vd
dS/ (-△ i
dS) <0 is negative resistance.Same as M in Fig. 2
14grid current potential reduce, namely in Fig. 2 B point current potential reduction, can M be analyzed as stated above
13output impedance be also negative resistance.Ignore the channel modulation effect of metal-oxide-semiconductor, M
14conductance be expressed as g
m14; During small-signal analysis output impedance, metal-oxide-semiconductor M
14with M
5a, M
1aparallel connection, metal-oxide-semiconductor M
14output impedance r
o14for negative value ,-1/g can be used
m14represent, the output impedance of this routine operation transconductance amplifier is expressed as
R
out≈g
m7r
o7(r
o1a||r
o5a||r
o14)||g
m8r
o8r
o9。
This routine M
7, M
8mutual conductance equal, output impedance is equal, i.e. g
m8=g
m7, r
o8=r
o7, the output impedance of this routine operation transconductance amplifier is expressed as
R
out≈g
m7/[g
o7(g
o1a+g
o5a+g
o9-g
m14)]，
Wherein g
mi, r
oibe respectively i-th metal-oxide-semiconductor M in circuit
imutual conductance and output impedance.
The M that this routine adjustable auxiliary differential is right
14mutual conductance g
m14=0.85 (g
o1a+ g
o5a+ g
o9), output impedance R
outrelatively do not add g
m14increase 6.67 times, achieve 16.5dB gain and promote.
The M that this routine adjustable auxiliary differential is right
15grid meet adjustable bias voltage V
t, by fine setting V
t, the impact of metal-oxide-semiconductor mismatch and process corner can be overcome, eliminate the error of output gain, realize error free amplification.
The present embodiment carries out simulation comparison experiment with comparative example under the identical power consumption situation of identical voltage, gained ac small signal amplitude frequency diagram result as shown in Figure 3, in Fig. 3, abscissa is frequency, unit is Hz, ordinate is gain, unit is that in dB, figure, solid line is the ac small signal amplitude frequency curve of the present embodiment, and dotted line is the ac small signal amplitude frequency curve of comparative example.
Under the present embodiment and comparative example the same terms, the ac small signal phase frequency figure result of simulation comparison experiment gained as shown in Figure 4, in Fig. 4, abscissa is frequency, unit is Hz, ordinate is phase place, unit is deg, in figure, solid line is the ac small signal phase frequency curve of the present embodiment, and dotted line is the ac small signal phase frequency curve of comparative example.
Can see in Fig. 3,4 that the present embodiment phase margin is 70.1 °, still be greater than 60 ° and ensure that Circuits System is stablized; Under this condition, the gain of the present embodiment low-frequency d reaches 72.7dB, and comparative example is only 53.7dB, improves more than 30%; The present embodiment unity gain bandwidth reaches 217.9MHz, and comparative example is only 192.7, the present embodiment walk back and forth true result achieve amplifier gain multiplication, obvious scheme of the present utility model has better performance under identical power consumption.
Table 1 furthermore present the specific performance parameter of the emulation experiment gained of the present embodiment and comparative example.
The performance parameter contrast table of table 1 the present embodiment and comparative example
| Parameter | Comparative example | The present embodiment |
| Supply voltage (V) | 1.2 | 1.2 |
| Power consumption (mW) | 1.05 | 1.05 |
| Low-frequency gain (dB) | 53.7 | 72.7 |
| Unity gain bandwidth (MHz) | 192.7 | 217.9 |
| Phase margin (deg) | 74.6 | 70.1 |
| Load capacitance (pF) | 5 | 5 |
| Common-mode rejection ratio (dB) | 11.2 | 94.5 |
Above-described embodiment, be only the specific case further described the purpose of this utility model, technical scheme and beneficial effect, the utility model is not defined in this.All make within scope of disclosure of the present utility model any amendment, equivalent replacement, improvement etc., be all included within protection range of the present utility model.
Claims (7)
1. an operation transconductance amplifier for gain lifting, comprises biased constant current source and the Differential Input be connected in series successively, load current mirror and cascade output stage, and wherein biased constant current source is P type metal-oxide-semiconductor M
0source electrode meet power vd D, M
0grid meet bias voltage V
bias; Differential Input is by 4 P type metal-oxide-semiconductor M
1a, M
2a, M
1band M
2bform, load current mirror is by 6 N-type metal-oxide-semiconductor M
3, M
4, M
5a, M
6a, M
5band M
6bform, cascade output stage is by 2 N-type metal-oxide-semiconductor M
7, M
10and 4 P type metal-oxide-semiconductor M
8, M
9, M
11, M
12form;
Differential input stage P type metal-oxide-semiconductor M
1a, M
2a, M
1band M
2bsource electrode meet P type metal-oxide-semiconductor M respectively
0drain electrode; N-type metal-oxide-semiconductor M
3drain electrode meets P type metal-oxide-semiconductor M respectively
2bdrain electrode, N-type metal-oxide-semiconductor M
5aand M
5bgrid, N-type metal-oxide-semiconductor M
3source electrode meet N-type metal-oxide-semiconductor M
5bdrain electrode, N-type metal-oxide-semiconductor M
4drain electrode meets P type metal-oxide-semiconductor M respectively
1bdrain electrode, N-type metal-oxide-semiconductor M
6aand M
6bgrid, N-type metal-oxide-semiconductor M
4source electrode meet N-type metal-oxide-semiconductor M
6bdrain electrode, N-type metal-oxide-semiconductor M
3, M
4grid meet bias voltage V
b1, N-type metal-oxide-semiconductor M
5a, M
5b, M
6aand M
6bsource electrode respectively ground connection; The N-type metal-oxide-semiconductor M of cascade output stage
7drain electrode meet P type metal-oxide-semiconductor M
8drain electrode, connect the second output end vo ut of cascade output stage simultaneously
-, cascade output stage P type metal-oxide-semiconductor M
8source electrode meet P type metal-oxide-semiconductor M
9drain electrode, N-type metal-oxide-semiconductor M
10drain electrode meet P type metal-oxide-semiconductor M respectively
11drain electrode, connect the first output end vo ut of cascade output stage simultaneously
+, P type metal-oxide-semiconductor M
11source electrode meet P type metal-oxide-semiconductor M
12drain electrode, N-type metal-oxide-semiconductor M
7, M
10grid meet bias voltage V respectively
b1, P type metal-oxide-semiconductor M
8, M
11grid meet bias voltage V respectively
b2, P type metal-oxide-semiconductor M
9, M
12grid meet common mode feedback voltage CMFB, P type metal-oxide-semiconductor M
9, M
12source electrode meet power vd D respectively; It is characterized in that:
Also comprise adjustable auxiliary differential pair, adjustable auxiliary differential is to by P type metal-oxide-semiconductor M
13, M
14and M
15form; P type metal-oxide-semiconductor M
13grid meet P type metal-oxide-semiconductor M respectively
1a, M
14drain electrode, N-type metal-oxide-semiconductor M
5adrain electrode and N-type metal-oxide-semiconductor M
7source electrode, P type metal-oxide-semiconductor M
14grid meet P type metal-oxide-semiconductor M respectively
2a, M
13drain electrode, N-type metal-oxide-semiconductor M
6adrain electrode and N-type metal-oxide-semiconductor M
10source electrode, P type metal-oxide-semiconductor M
13, M
14source electrode meet P type metal-oxide-semiconductor M
15drain electrode, P type metal-oxide-semiconductor M
15source electrode meet power vd D.
2. the operation transconductance amplifier of gain lifting according to claim 1, is characterized in that:
Described current mirror M
5b-M
5a, M
6b-M
6adimension scale identical, i.e. M
5asize and M
5bsize be in a ratio of K, same M
6asize and M
6bsize compare also for the span of K, K is 2 ~ 5.
3. the operation transconductance amplifier of gain lifting according to claim 1, is characterized in that:
The metal-oxide-semiconductor M of described Differential Input
1a, M
1bmeasure-alike, the mutual conductance of the two is equal, i.e. g
m1b=g
m1a, the overall mutual conductance of this operation transconductance amplifier is G=g
m1a+ Kg
m1b=(1+K) g
m1a.
4. the operation transconductance amplifier of gain lifting according to claim 1, is characterized in that:
Described cascade output stage metal-oxide-semiconductor M
7and M
8mutual conductance equal, output impedance is equal, i.e. g
m8=g
m7, r
o8=r
o7; The P type metal-oxide-semiconductor M that described adjustable auxiliary differential is right
14mutual conductance g
m14increase, and 0≤g
m14<g
o1a+ g
o5a+ g
o9.
5. the operation transconductance amplifier of gain lifting according to claim 4, is characterized in that:
The P type metal-oxide-semiconductor M that described adjustable auxiliary differential is right
14mutual conductance g
m14=0.85 (g
o1a+ g
o5a+ g
o9).
6. the operation transconductance amplifier of gain lifting according to claim 1, is characterized in that:
The P type metal-oxide-semiconductor M that described adjustable auxiliary differential is right
15grid meet adjustable bias voltage V
t.
7. the operation transconductance amplifier of gain lifting according to claim 6, is characterized in that:
The P type metal-oxide-semiconductor M that described adjustable auxiliary differential is right
15grid meet adjustable bias voltage V
tadjustable range be ± 1mV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520763260.4U CN204928758U (en) | 2015-09-29 | 2015-09-29 | Operation transconductance amplifier that gain promoted |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520763260.4U CN204928758U (en) | 2015-09-29 | 2015-09-29 | Operation transconductance amplifier that gain promoted |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204928758U true CN204928758U (en) | 2015-12-30 |
Family
ID=54977853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520763260.4U Expired - Fee Related CN204928758U (en) | 2015-09-29 | 2015-09-29 | Operation transconductance amplifier that gain promoted |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204928758U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105141265A (en) * | 2015-09-29 | 2015-12-09 | 广西师范大学 | Gain increased operational transconductance amplifier |
| CN111865227A (en) * | 2020-08-17 | 2020-10-30 | 北京大学深圳研究生院 | Thin film transistor integrated amplifier |
| CN112653319A (en) * | 2020-12-10 | 2021-04-13 | 中国科学院微电子研究所 | Receiving circuit of isolation driving circuit |
| CN111865227B (en) * | 2020-08-17 | 2024-04-19 | 北京大学深圳研究生院 | Thin film transistor integrated amplifier |
-
2015
- 2015-09-29 CN CN201520763260.4U patent/CN204928758U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105141265A (en) * | 2015-09-29 | 2015-12-09 | 广西师范大学 | Gain increased operational transconductance amplifier |
| CN105141265B (en) * | 2015-09-29 | 2017-12-22 | 广西师范大学 | A kind of operation transconductance amplifier of gain lifting |
| CN111865227A (en) * | 2020-08-17 | 2020-10-30 | 北京大学深圳研究生院 | Thin film transistor integrated amplifier |
| CN111865227B (en) * | 2020-08-17 | 2024-04-19 | 北京大学深圳研究生院 | Thin film transistor integrated amplifier |
| CN112653319A (en) * | 2020-12-10 | 2021-04-13 | 中国科学院微电子研究所 | Receiving circuit of isolation driving circuit |
| CN112653319B (en) * | 2020-12-10 | 2022-04-19 | 中国科学院微电子研究所 | Receiving circuit of isolation driving circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105141265B (en) | A kind of operation transconductance amplifier of gain lifting | |
| CN105720936B (en) | A kind of trsanscondutance amplifier based on automatic biasing cascode structure | |
| CN104113295A (en) | Low-voltage fully-differential operation amplifier circuit | |
| CN102611400B (en) | High-gain single-stage operational transconductance amplifier | |
| CN107733382A (en) | The rail-to-rail constant transconductance amplifier of automatic biasing | |
| CN104242830B (en) | Reconfigurable ultra-wideband low-noise amplifier based on active inductance | |
| CN111162739A (en) | Transconductance operational amplifier with wide linear input range | |
| CN109462381B (en) | Operational current amplifier suitable for deep submicron CMOS process | |
| CN111478671B (en) | Novel low-noise amplifier applied to Sub-GHz frequency band | |
| CN105207636A (en) | Variable gain low noise amplifier | |
| Wang et al. | An enhanced bulk-driven OTA with high transconductance against CMOS scaling | |
| CN105227142A (en) | A kind of low pressure Foldable cascade trsanscondutance amplifier | |
| CN113346847A (en) | High linearity variable gain amplifier | |
| CN204928758U (en) | Operation transconductance amplifier that gain promoted | |
| Safari et al. | A simple low voltage, high output impedance resistor based current mirror with extremely low input and output voltage requirements | |
| CN105743448B (en) | A kind of adjustable high linearity trsanscondutance amplifier structure for Gm-C filters | |
| Zhao et al. | Low-voltage process-insensitive frequency compensation method for two-stage OTA with enhanced DC gain | |
| CN205864373U (en) | It is applied to the modified model gilbert mixer of wireless communication transceiver system | |
| CN105811886A (en) | Improved Gilbert mixer applied to wireless communication transceiver system | |
| CN105958953A (en) | Data receiver | |
| CN105897172A (en) | Linearity improved mixer | |
| Vij et al. | An operational amplifier with recycling folded Cascode topology and adaptive biaisng | |
| CN204615777U (en) | Differential amplifier | |
| Kundu et al. | A current mirror based two stage CMOS cascode op-amp for high frequency application | |
| CN113271073B (en) | Reconfigurable operational transconductance amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151230 Termination date: 20160929 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |