CN204836108U - Drive circuit of MOS pipe among battery management system - Google Patents
Drive circuit of MOS pipe among battery management system Download PDFInfo
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- CN204836108U CN204836108U CN201520684588.7U CN201520684588U CN204836108U CN 204836108 U CN204836108 U CN 204836108U CN 201520684588 U CN201520684588 U CN 201520684588U CN 204836108 U CN204836108 U CN 204836108U
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- 239000004065 semiconductor Substances 0.000 claims description 75
- 230000010412 perfusion Effects 0.000 claims description 10
- 230000000087 stabilizing effect Effects 0.000 claims description 9
- 230000001133 acceleration Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 8
- 230000005611 electricity Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
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- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The utility model discloses a drive circuit of MOS pipe among battery management system, including MOS pipe drive unit, opto -coupler, first resistance, second resistance, quickening a switch circuit and a MOS pipe, MOS pipe drive unit includes the 2nd MOS pipe, third resistance and fourth resistance, switch circuit includes with higher speed: the 5th resistance and first electric capacity, the 5th resistance one end is managed and first electric capacity one end through a first ohmic connection MOS, and first electric capacity one end is connected to the other end, and the first electric capacity other end is connected with second resistance one end and emitting diode positive pole, the second resistance other end and first resistance and the 5th ohmic connection. The utility model discloses, switch circuit has quickened MOS pipe grid electric charge bleed off when the high level with higher speed, and the opto -coupler switches on in the twinkling of an eye for the discharge process, shortened the time that MOS pipe turn -offed, avoid MOS pipe to burn, first electric capacity is full of the electricity back fast, the opto -coupler ends, drives the 2nd MOS pipe and turn -offs, electric charge in the first electric capacity is put to second resistance, reduces the consumption.
Description
Technical field
The utility model relates to analog circuit, is specifically related to the drive circuit of metal-oxide-semiconductor in a kind of battery management system.
Background technology
At present, when in needs breaking circuit when metal-oxide-semiconductor, custom circuit can be carried out the electric charge that bleed off falls on grid and complete shutoff by the resistance that resistance is very large, and due to resistance larger, so the process need turned off expends the more time, often easily burn metal-oxide-semiconductor.Therefore, a kind of circuit effectively can accelerating metal-oxide-semiconductor turn-off speed when turning off metal-oxide-semiconductor is badly in need of.
Utility model content
The process consumes time that technical problem to be solved in the utility model turns off when being and turning off metal-oxide-semiconductor in available circuit is longer, easily burns the problem of metal-oxide-semiconductor.
In order to solve the problems of the technologies described above, the utility model provides the drive circuit of metal-oxide-semiconductor in a kind of battery management system, comprises metal-oxide-semiconductor driver element, photoelectrical coupler, the first resistance, the second resistance, acceleration switch circuit and the first metal-oxide-semiconductor,
Metal-oxide-semiconductor driver element comprises the second metal-oxide-semiconductor, the 3rd resistance and the 4th resistance;
Acceleration switch circuit comprises the 5th resistance and the first electric capacity, one end of 5th resistance connects the grid of the first metal-oxide-semiconductor by the first resistance, the other end of the 5th resistance connects one end of the first electric capacity, the other end of the first electric capacity is connected with the anode of light-emitting diode in one end of the second resistance and photoelectrical coupler respectively, and the other end of the second resistance is connected with one end of the first resistance and one end of the 5th resistance respectively.
In technique scheme, described metal-oxide-semiconductor driver element also comprises perfusion circuit, perfusion circuit comprises NPN type phototriode, positive-negative-positive phototriode and the 6th resistance, the base stage of NPN type phototriode connects the base stage of positive-negative-positive phototriode, the emitter of NPN type phototriode connects the emitter of positive-negative-positive phototriode, the collector electrode of NPN type phototriode connects the positive pole of storage battery, the collector electrode of positive-negative-positive phototriode connects the grid of the second metal-oxide-semiconductor, one end of 6th resistance is connected with the base stage of NPN type phototriode and the base stage of positive-negative-positive phototriode respectively, the other end of the 6th resistance connects the positive pole of storage battery, the output of perfusion circuit connects one end of described 4th resistance, the other end of described 4th resistance is connected with the collector electrode of phototriode in one end of described 3rd resistance and described photoelectrical coupler respectively, the other end of described 3rd resistance is connected with the grid of described second metal-oxide-semiconductor.
In technique scheme, described metal-oxide-semiconductor driver element also comprises the 7th resistance, one end of 7th resistance is connected with the grid of described second metal-oxide-semiconductor and the other end of described 3rd resistance respectively, the other end of the 7th resistance connects the source electrode of described second metal-oxide-semiconductor, the source ground of described second metal-oxide-semiconductor.
In technique scheme, also comprise the 8th resistance, 9th resistance, second electric capacity, diode and voltage stabilizing didoe, one end of 8th resistance is connected with the other end of described first resistance and the grid of described first metal-oxide-semiconductor respectively, the other end ground connection of the 8th resistance, one end of 9th resistance is connected with the described drain electrode of the first metal-oxide-semiconductor and the anode of diode respectively, the other end of the 9th resistance respectively with the base stage of described NPN type phototriode, the base stage of described positive-negative-positive phototriode is connected with one end of described 6th resistance, the negative electrode of diode, one end of second electric capacity and the negative electrode of voltage stabilizing didoe connect the positive pole of storage battery respectively, the other end of the second electric capacity and the anode of voltage stabilizing didoe ground connection respectively.
The utility model, when the drive point that charges is in high level, the acceleration switch circuit of the 5th resistance and the first electric capacity composition, accelerate the electric charge bleed off of the first metal-oxide-semiconductor grid, make photoelectrical coupler transient switching, accelerate discharge process, shorten the time that the first metal-oxide-semiconductor turns off, avoid the first metal-oxide-semiconductor to burn, after the first electric capacity is full of electricity fast, charging drive point is in low level, photoelectrical coupler ends, drive the second metal-oxide-semiconductor to turn off, the second resistance that resistance is larger bleeds off the electric charge in the first electric capacity, reduces power consumption.
Accompanying drawing explanation
The schematic diagram of the drive circuit of metal-oxide-semiconductor in a kind of battery management system that Fig. 1 provides for the utility model embodiment.
Embodiment
Below in conjunction with Figure of description, the utility model is described in detail.
The utility model provides the drive circuit of metal-oxide-semiconductor in a kind of battery management system, as shown in Figure 1, comprises metal-oxide-semiconductor driver element, photoelectrical coupler U2, the first resistance R7, the second resistance R14, acceleration switch circuit and the first metal-oxide-semiconductor Q5.
Metal-oxide-semiconductor driver element comprises the second metal-oxide-semiconductor Q9, the 3rd resistance R16 and the 4th resistance R12.
Acceleration switch circuit comprises the 5th resistance R9 and the first electric capacity C1, one end of 5th resistance R9 connects the grid of the first metal-oxide-semiconductor Q5 by the first resistance R7, the other end of the 5th resistance R9 connects one end of the first electric capacity C1, the other end of the first electric capacity C1 is connected with the anode of light-emitting diode in one end of the second resistance R14 and photoelectrical coupler U2 respectively, and the other end of the second resistance R14 is connected with one end of the first resistance R7 and one end of the 5th resistance R9 respectively.
When the drive point (Discharge) that charges is in high level, the acceleration switch circuit that 5th resistance R9 and the first electric capacity C1 forms accelerates the electric charge bleed off of the first metal-oxide-semiconductor Q5 grid, photoelectrical coupler U2 transient switching, accelerate discharge process, shorten the time that the first metal-oxide-semiconductor Q5 turns off, avoid the first metal-oxide-semiconductor Q5 to burn, the signal of telecommunication of input drives the input (light-emitting diode) of photoelectrical coupler U2 to send light signal, after the output (phototriode) of photoelectrical coupler U2 receives light signal, light signal is reduced into the signal of telecommunication, collector electrode through phototriode is launched, the second metal-oxide-semiconductor Q9 is driven to open, after the first electric capacity C1 is full of electricity, charging drive point is in low level, and photoelectrical coupler U2 ends, and drives the second metal-oxide-semiconductor Q9 to turn off, and the second resistance R14 that resistance is larger bleeds off the electric charge in the first electric capacity C1, reduces power consumption.
Metal-oxide-semiconductor driver element also comprises perfusion circuit, perfusion circuit comprises NPN type phototriode Q4, positive-negative-positive phototriode Q7 and the 6th resistance R3, the base stage of NPN type phototriode Q4 connects the base stage of positive-negative-positive phototriode Q7, the emitter of NPN type phototriode Q4 connects the emitter of positive-negative-positive phototriode Q7, the collector electrode of NPN type phototriode Q4 connects the positive pole (+12V) of storage battery, the collector electrode of positive-negative-positive phototriode Q7 connects the grid of the second metal-oxide-semiconductor Q9, one end of 6th resistance R3 is connected with the base stage of NPN type phototriode Q4 and the base stage of positive-negative-positive phototriode Q7 respectively, the other end of the 6th resistance R3 connects the positive pole of storage battery, the output of perfusion circuit connects one end of the 4th resistance R12, the other end of the 4th resistance R12 is connected with the collector electrode of phototriode in one end of the 3rd resistance R16 and photoelectrical coupler U2 respectively, the other end of the 3rd resistance R16 is connected with the grid of the second metal-oxide-semiconductor Q9.
Wherein, perfusion circuit has reduction internal resistance, increase the effect of exciting current, NPN type phototriode Q4 and positive-negative-positive phototriode Q7 is the emitter follower of a PNP+NPN complementation, be equivalent to two switches led at square wave excitation signal controlling lower whorl conductance, when high level arrives, NPN type phototriode Q4 conducting, positive-negative-positive phototriode Q7 ends, the positive pole of storage battery is through the gate charges of NPN type phototriode Q4 to the second metal-oxide-semiconductor Q9, because NPN type phototriode Q4 is saturation conduction, the positive pole of storage battery is equivalent to the grid being directly added to the second metal-oxide-semiconductor Q9, momentary charge electric current is very big, charging interval is extremely short, ensure that opening rapidly of the second metal-oxide-semiconductor Q9, when low level arrives, NPN type phototriode Q4 ends, positive-negative-positive phototriode Q7 conducting, the electric charge that the grid of the second metal-oxide-semiconductor Q9 fills discharges rapidly through positive-negative-positive phototriode Q7, because positive-negative-positive phototriode Q7 is saturation conduction, discharge time is extremely short, ensure that the rapid shutoff of the second metal-oxide-semiconductor Q9.
Wherein, 4th resistance R12 and the 3rd resistance R16 is pumping signal internal resistance, and the resistance of the 4th resistance R12 and the 3rd resistance R16 is very little, makes the electric current that pumping signal can provide enough, make the grid charging and discharging rapidly of the second metal-oxide-semiconductor Q9, drive the second metal-oxide-semiconductor Q9 open rapidly and turn off.
Metal-oxide-semiconductor driver element also comprises the 7th resistance R18, one end of 7th resistance R18 is connected with the grid of the second metal-oxide-semiconductor Q9 and the other end of the 3rd resistance R16 respectively, the other end of the 7th resistance R18 connects the source electrode of the second metal-oxide-semiconductor Q9, the source ground of the second metal-oxide-semiconductor Q9.
The drive circuit of metal-oxide-semiconductor also comprises the 8th resistance R10, 9th resistance R5, second electric capacity C2, diode D2 and voltage stabilizing didoe D1, R10 one end of 8th resistance is connected with the other end of the first resistance R7 and the grid of the first metal-oxide-semiconductor Q5 respectively, the other end ground connection of the 8th resistance R10, one end of 9th resistance R5 is connected with the drain electrode of the first metal-oxide-semiconductor Q5 and the anode of diode D2 respectively, the other end of the 9th resistance R5 respectively with the base stage of NPN type phototriode Q4, the base stage of positive-negative-positive phototriode Q7 is connected with one end of the 6th resistance R3, the negative electrode of diode D2, one end of second electric capacity C2 and the negative electrode of voltage stabilizing didoe D1 connect the positive pole of storage battery respectively, the other end of the second electric capacity C2 and the anode of voltage stabilizing didoe D1 ground connection respectively.
Wherein, the 8th resistance R10 is bleed off resistance, and the resistance of the 8th resistance R10 is less, is generally about several kilohms, and the electric charge that the first metal-oxide-semiconductor Q5 grid stores is discharged rapidly by the 8th resistance R10.
The utility model is not limited to above-mentioned preferred forms, and anyone should learn the structural change made under enlightenment of the present utility model, and every have identical or close technical scheme with the utility model, all falls within protection range of the present utility model.
Claims (4)
1. the drive circuit of metal-oxide-semiconductor in battery management system, comprises metal-oxide-semiconductor driver element, photoelectrical coupler, the first resistance and the second resistance, it is characterized in that, also comprise acceleration switch circuit and the first metal-oxide-semiconductor,
Metal-oxide-semiconductor driver element comprises the second metal-oxide-semiconductor, the 3rd resistance and the 4th resistance;
Acceleration switch circuit comprises the 5th resistance and the first electric capacity, one end of 5th resistance connects the grid of the first metal-oxide-semiconductor by the first resistance, the other end of the 5th resistance connects one end of the first electric capacity, the other end of the first electric capacity is connected with the anode of light-emitting diode in one end of the second resistance and photoelectrical coupler respectively, and the other end of the second resistance is connected with one end of the first resistance and one end of the 5th resistance respectively.
2. the drive circuit of metal-oxide-semiconductor in a kind of battery management system as claimed in claim 1, it is characterized in that, described metal-oxide-semiconductor driver element also comprises perfusion circuit, perfusion circuit comprises NPN type phototriode, positive-negative-positive phototriode and the 6th resistance, the base stage of NPN type phototriode connects the base stage of positive-negative-positive phototriode, the emitter of NPN type phototriode connects the emitter of positive-negative-positive phototriode, the collector electrode of NPN type phototriode connects the positive pole of storage battery, the collector electrode of positive-negative-positive phototriode connects the grid of the second metal-oxide-semiconductor, one end of 6th resistance is connected with the base stage of NPN type phototriode and the base stage of positive-negative-positive phototriode respectively, the other end of the 6th resistance connects the positive pole of storage battery, the output of perfusion circuit connects one end of described 4th resistance, the other end of described 4th resistance is connected with the collector electrode of phototriode in one end of described 3rd resistance and described photoelectrical coupler respectively, the other end of described 3rd resistance is connected with the grid of described second metal-oxide-semiconductor.
3. the drive circuit of metal-oxide-semiconductor in a kind of battery management system as claimed in claim 2, it is characterized in that, described metal-oxide-semiconductor driver element also comprises the 7th resistance, one end of 7th resistance is connected with the grid of described second metal-oxide-semiconductor and the other end of described 3rd resistance respectively, the other end of the 7th resistance connects the source electrode of described second metal-oxide-semiconductor, the source ground of described second metal-oxide-semiconductor.
4. the drive circuit of metal-oxide-semiconductor in a kind of battery management system as claimed in claim 3, it is characterized in that, also comprise the 8th resistance, 9th resistance, second electric capacity, diode and voltage stabilizing didoe, one end of 8th resistance is connected with the other end of described first resistance and the grid of described first metal-oxide-semiconductor respectively, the other end ground connection of the 8th resistance, one end of 9th resistance is connected with the described drain electrode of the first metal-oxide-semiconductor and the anode of diode respectively, the other end of the 9th resistance respectively with the base stage of described NPN type phototriode, the base stage of described positive-negative-positive phototriode is connected with one end of described 6th resistance, the negative electrode of diode, one end of second electric capacity and the negative electrode of voltage stabilizing didoe connect the positive pole of storage battery respectively, the other end of the second electric capacity and the anode of voltage stabilizing didoe ground connection respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520684588.7U CN204836108U (en) | 2015-09-06 | 2015-09-06 | Drive circuit of MOS pipe among battery management system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520684588.7U CN204836108U (en) | 2015-09-06 | 2015-09-06 | Drive circuit of MOS pipe among battery management system |
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| Publication Number | Publication Date |
|---|---|
| CN204836108U true CN204836108U (en) | 2015-12-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520684588.7U Expired - Fee Related CN204836108U (en) | 2015-09-06 | 2015-09-06 | Drive circuit of MOS pipe among battery management system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108110734A (en) * | 2017-12-27 | 2018-06-01 | 苏州易美新思新能源科技有限公司 | A kind of fast drive circuit |
| CN110635676A (en) * | 2019-11-05 | 2019-12-31 | 中国船舶重工集团公司第七0五研究所 | Bootstrap type pre-charging slow-starting charging circuit |
-
2015
- 2015-09-06 CN CN201520684588.7U patent/CN204836108U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108110734A (en) * | 2017-12-27 | 2018-06-01 | 苏州易美新思新能源科技有限公司 | A kind of fast drive circuit |
| CN110635676A (en) * | 2019-11-05 | 2019-12-31 | 中国船舶重工集团公司第七0五研究所 | Bootstrap type pre-charging slow-starting charging circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160405 Address after: 100000, Beijing, Changping District science and Technology Park, super Road, No. 3, building 2140, room 9 Patentee after: CSIC YUANZHOU (BEIJING) SCIENCE & TECHNOLOGY Co.,Ltd. Address before: 102000, room 2359, block B, building 9, building No. 3, front road, Changping District science and Technology Park, Beijing Patentee before: BEIJING HAITE YUANZHOU NEW ENERGY TECHNOLOGY Co.,Ltd. |
|
| CB03 | Change of inventor or designer information |
Inventor after: Zhang Jiashen Inventor after: Sun Dongsheng Inventor after: Wang Hongpeng Inventor after: Kang Jian Inventor before: Zhang Jiashen |
|
| CB03 | Change of inventor or designer information | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 |
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| CF01 | Termination of patent right due to non-payment of annual fee |