CN204834666U - LED product of built -in IC chip and WWA wafer and LED support thereof - Google Patents
LED product of built -in IC chip and WWA wafer and LED support thereof Download PDFInfo
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- CN204834666U CN204834666U CN201520432169.4U CN201520432169U CN204834666U CN 204834666 U CN204834666 U CN 204834666U CN 201520432169 U CN201520432169 U CN 201520432169U CN 204834666 U CN204834666 U CN 204834666U
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- 239000000843 powder Substances 0.000 claims abstract description 15
- 238000005192 partition Methods 0.000 claims abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 11
- 229910052708 sodium Inorganic materials 0.000 claims description 11
- 239000011734 sodium Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000007493 shaping process Methods 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 49
- 238000005286 illumination Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 235000007926 Craterellus fallax Nutrition 0.000 description 1
- 240000007175 Datura inoxia Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a LED product of built -in IC chip and WWA wafer and LED support thereof, the structure of this LED support includes electrically conductive foot of 4PIN and bench insulator, should inlay the shaping with bench insulator an organic whole by electrically conductive foot, the recessed reflection of light cup that is formed with of top surface of this bench insulator, it is divided into two and divides the first anti - light zone territory that is used for holding blue streak LED wafer and fluorescent powder layer into and be used for holding blue streak LED wafer to be equipped with the partition wall on this reflection of light cup, fluorescent powder layer and the anti - light zone territory of second that can send the LED wafer of red or gold -tinted. When utilizing this kind of LED support production for the LED product, through at the fixed blue streak LED wafer in first anti - light zone territory, at the fixed blue streak in the anti - light zone territory of second and can send LED wafer and IC the chip red or gold -tinted. Output current through control IC chip reaches the luminous luminance of control LED wafer, adjusts colour temperature, luminance and makes LED horse race, flowing water etc. And dazzle various effect, has the advantage that luminous color polytropy and energy consumption are low.
Description
Technical field
The utility model relates to LED field technology, refers in particular to a kind of build-in IC chip and WWA wafer
LED product and LED support.
Background technology
Traditional LED lamp is a kind of LED product and manufacture method (200910114604.8) thereof disclosed in Chinese invention patent, and its structure is a reflector center White-light LED chip being placed in LED support, then by filling fluorescent material, makes LED send white light.When this traditional LED lamp is used as illumination, only need to light White-light LED chip, low in energy consumption.But the white light that this type of traditional LED lamp only can only send single fixing colour temperature in identical product can not realize regulating colour temperature and realizing some change functions.
In view of this, how developing the white light and colour temperature, the controllable LED of brightness that had both sent multiple color temperatures in a kind of single LED, is those skilled in the art's difficult problems urgently to be resolved hurrily.
Utility model content
In view of this, the utility model is for the disappearance of prior art existence, its main purpose is to provide a kind of LED support and LED product thereof, this kind of LED product can send the white light of multiple color temperatures and gold-tinted or ruddiness simultaneously, by controlling the output current of build-in IC chip, reach and control LED wafer luminosity, regulate colour temperature, brightness and manufacture LED horse race, flowing water etc. and dazzle color effect, there is luminous color polytropy and the low advantage of energy consumption.
For achieving the above object, the utility model adopts following technical scheme:
A kind of LED support, comprise 4PIN conductive feet and insulating base, this conductive feet and insulating base one produced by insert molding, the end face of this insulating base is recessed is formed with reflector, wherein, this reflector is provided with partition wall and is divided into two and is divided into for the first retroreflective regions of an accommodating blue streak LED wafer and phosphor powder layer with for another blue streak LED wafer accommodating, phosphor powder layer and second retroreflective regions of LED wafer that can send redness or sodium yellow.
As a kind of preferred version: the height of described partition wall is less than the reflector degree of depth.
As a kind of preferred version: described 4PIN conductive feet is respectively the first conductive feet for connecing power supply, for the second conductive feet of signal input, the 3rd conductive feet exported for signal and the 4th conductive feet for ground connection, the die bond face of this first, the 4th conductive feet is exposed to the first and second retroreflective regions simultaneously, the die bond face of this second conductive feet is only exposed to the second retroreflective regions, and the die bond face of the 3rd conductive feet is only exposed to the first retroreflective regions.
The LED product of a kind of build-in IC chip and WWA wafer, it comprises LED support, two blue streak LED wafer, the LED wafer that can send redness or sodium yellow and IC chip as described in any one of claims 1 to 3, wherein a blue streak LED wafer die bond is in the first retroreflective regions, another blue streak LED wafer, the LED wafer that can send redness or sodium yellow and IC chip die bond are in the second retroreflective regions, and this IC chip is electrically connected with two white light LEDs wafers and the LED wafer that can send redness or sodium yellow respectively.
As a kind of preferred version: in described first retroreflective regions, LED wafer is fixed in the 3rd conductive feet, and in described second retroreflective regions, LED wafer is fixed in the first conductive feet, and described IC chip is fixed in the 4th conductive feet.
As a kind of preferred version: be equipped with phosphor powder layer outside LED wafer in described first retroreflective regions and the second retroreflective regions, and in reflector, be filled with transparent mode band diffusion glue-line, this transparent mode band diffusion glue-line is positioned at outside phosphor powder layer.
The utility model compared with prior art has obvious advantage and beneficial effect, specifically, as shown from the above technical solution, it is by being all installed on two white light LEDs wafers and the LED wafer and IC chip that can send redness or sodium yellow in reflector, LED product is made both to can be used as illumination, can be used as again backlight to use, and control the output current of build-in IC chip, LED wafer luminosity can be controlled respectively, have to regulate colour temperature, brightness and manufacture LED horse race, flowing water etc. and dazzle color effect, there is luminous color polytropy and the low advantage of energy consumption.
For more clearly setting forth architectural feature of the present utility model and effect, below in conjunction with accompanying drawing and specific embodiment, the utility model is described in detail.
Accompanying drawing explanation
Fig. 1 is the LED support schematic perspective view of the utility model;
Fig. 2 is the bottom schematic view of Fig. 1;
Fig. 3 is the vertical view of Fig. 1;
Fig. 4 is the cutaway view at N-N place in Fig. 3;
Fig. 5 is the LED product schematic perspective view of the utility model;
Fig. 6 is the vertical view of Fig. 5;
Fig. 7 is the schematic diagram after the LED product sealing of the utility model;
Fig. 8 is the cutaway view after the LED product sealing of the utility model.
Accompanying drawing identifier declaration:
11, the first conductive feet 12, second conductive feet
13, the 3rd conductive feet 14, the 4th conductive feet
20, insulating base 30, reflector
31, partition wall 32, first retroreflective regions
33, the second retroreflective regions 41, blue streak LED wafer
42, A wafer 43, IC chip
51, phosphor powder layer 52, transparent mode band diffusion glue-line.
Embodiment
Please refer to shown in Fig. 1 to Fig. 4, that show for built-in WWA wafer LED support, its structure includes 4PIN conductive feet 11 ~ 14 and insulating base 20, and this conductive feet 11 ~ 14 and insulating base 20 one produced by insert molding, the end face of this insulating base 20 is recessed is formed with reflector 30.
Wherein, this reflector 30 be provided with partition wall 31 reflector 30 is divided into two be divided into for an accommodating blue streak LED wafer 41 and phosphor powder layer the first retroreflective regions 32 and be used for another blue streak LED wafer 41 accommodating, phosphor powder layer and can glow or the A wafer 42(of gold-tinted is LED wafer, for the ease of distinguishing, replace with A) the second retroreflective regions 33, the height of this partition wall 31 is less than reflector 30 degree of depth.
Described 4PIN conductive feet is respectively the first conductive feet 11 for connecing power supply, for the second conductive feet 12 of signal input, the 3rd conductive feet 13 exported for signal and the 4th conductive feet 14 for ground connection, the die bond face of this first conductive feet 11, the 4th conductive feet 14 is exposed to the first retroreflective regions 32 and the second retroreflective regions 33 simultaneously, the die bond face that the die bond face of this second conductive feet 12 is only exposed to the second retroreflective regions the 33, three conductive feet 13 is only exposed to the first retroreflective regions 32; This 4PIN conductive feet 11 ~ 14 is stretched out from the both sides of insulating base 20 and the lower curved bottom being accommodated in insulating base 20 respectively.
Please refer to shown in Fig. 5 to Fig. 8, that show for built-in WWA wafer LED product, this kind of LED product can be used for illumination, also can be used as backlight.This LED product comprises above-mentioned LED support, two blue streak LED wafer 41, the A wafer 42 that can send ruddiness or gold-tinted and IC chip 43, wherein blue streak LED wafer 41 die bond is in above-mentioned first retroreflective regions 32, another blue streak LED wafer 41, A wafer 42 and IC chip 43 die bond are in above-mentioned second retroreflective regions 33, and this IC chip 43 is connected with two blue streak LED wafer 41 and A wafer 42 electricity respectively; Further, in the first retroreflective regions 32, blue streak LED wafer 41 is fixed in the 3rd conductive feet 13, and in the second retroreflective regions 33, blue streak LED wafer 41 and A wafer 42 are fixed in the first conductive feet 11, and IC chip 43 is fixed in the 4th conductive feet 14; In the first retroreflective regions 32 and the second retroreflective regions 33, be equipped with phosphor powder layer 51 outside LED wafer, and in reflector 30, be filled with transparent mode band diffusion glue-line 52, this transparent mode band diffusion glue-line 52 is positioned at outside phosphor powder layer 51.
This IC chip 43 is triple channel programmable control chips, and this IC chip 43 controls the output current of each luminescent wafer, can control LED wafer luminosity respectively.
This LED product is an intelligent external control LED light source integrating control circuit and illuminating circuit, its external form is identical with 5050LED lamp pearl, each element is a pixel, pixel inside contains intelligent digital interface data latch signal shaping amplification driving circuit, power supply stabilization circuit, built-in constant-current circuit, high accuracy RC oscillator, export to drive and adopt patent PWM technology, effectively ensure that the color high consistency of light in pixel; This LED product has low voltage drive, environmental protection and energy saving, brightness is high, scattering angle is large, consistency is good, ultra low power, the advantages such as extra long life, are integrated in control circuit above LED, circuit becomes simpler, volume is little, installs easier, and it is mainly used in LED adjustable color temperature luminescent characters lamp string, LED adjustable color temperature module, LED adjustable color temperature soft or hard lamp bar, LED guardrail tube, on the illumination of LED outward appearance/sight and the various electronic product such as LED point light source, pixel screen, abnormity screen, electric equipment horse race lamp.
By the design of this kind of LED product, utilize IC chip 43 directly to control the switch of LED wafer, can multiple combination be realized, reach different illumination effects.
Can be emitted white light two LED wafer 41 of W, the A wafer 42 of can glow R or gold-tinted Y, different combination performances such as:
Below the brilliance that sends of often kind of combination is all in different colours, and can meet the light requirement that 2000K-7000K colour temperature under lighting condition uninterruptedly regulates change, a kind of light source meets the lighting demand of all different-colours.
If by this products application in backlight, use blue streak LED wafer and the LED wafer that can send redness or sodium yellow simultaneously, also can use collocation two or more arbitrarily according to need, make the luminescence variation of LED product, meet the different needs; Color is horn of plenty more.
Design focal point of the present utility model is, by two white light LEDs wafers and the LED wafer and IC chip that can send redness or sodium yellow are all installed in reflector, LED product is made both to can be used as illumination, can be used as again backlight to use, and control the output current of build-in IC chip, LED wafer luminosity can be controlled respectively, have to regulate colour temperature, brightness and manufacture LED horse race, flowing water etc. and dazzle color effect, there is luminous color polytropy and the low advantage of energy consumption.
The above, it is only preferred embodiment of the present utility model, not technical scope of the present utility model is imposed any restrictions, therefore all above embodiment is done according to technical spirit of the present utility model any trickle amendment, equivalent variations and modification, all still belong in the scope of technical solutions of the utility model.
Claims (6)
1. a LED support, comprise 4PIN conductive feet and insulating base, this conductive feet and insulating base one produced by insert molding, the end face of this insulating base is recessed is formed with reflector, it is characterized in that: this reflector is provided with partition wall and is divided into two and is divided into for the first retroreflective regions of an accommodating blue streak LED wafer and phosphor powder layer with for another blue streak LED wafer accommodating, phosphor powder layer and second retroreflective regions of LED wafer that can send redness or sodium yellow.
2. LED support according to claim 1, is characterized in that: the height of described partition wall is less than the reflector degree of depth.
3. LED support according to claim 1, it is characterized in that: described 4PIN conductive feet is respectively the first conductive feet for connecing power supply, for the second conductive feet of signal input, the 3rd conductive feet exported for signal and the 4th conductive feet for ground connection, the die bond face of this first, the 4th conductive feet is exposed to the first and second retroreflective regions simultaneously, the die bond face of this second conductive feet is only exposed to the second retroreflective regions, and the die bond face of the 3rd conductive feet is only exposed to the first retroreflective regions.
4. the LED product of a build-in IC chip and WWA wafer, it is characterized in that: comprise the LED support as described in any one of claims 1 to 3, two blue streak LED wafer, the LED wafer that can send redness or sodium yellow and IC chip, wherein a blue streak LED wafer die bond is in the first retroreflective regions, another blue streak LED wafer, the LED wafer that can send redness or sodium yellow and IC chip die bond are in the second retroreflective regions, and this IC chip is electrically connected with two blue streak LED wafer and the LED wafer that can send redness or sodium yellow respectively.
5. the LED product of build-in IC chip according to claim 4 and WWA wafer, it is characterized in that: in described first retroreflective regions, LED wafer is fixed in the 3rd conductive feet, in described second retroreflective regions, LED wafer is fixed in the first conductive feet, and described IC chip is fixed in the 4th conductive feet.
6. the LED product of build-in IC chip according to claim 4 and WWA wafer, it is characterized in that: in described first retroreflective regions and the second retroreflective regions, outside LED wafer, be equipped with phosphor powder layer, and in reflector, being filled with transparent mode band diffusion glue-line, this transparent mode band diffusion glue-line is positioned at outside phosphor powder layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520432169.4U CN204834666U (en) | 2015-06-23 | 2015-06-23 | LED product of built -in IC chip and WWA wafer and LED support thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520432169.4U CN204834666U (en) | 2015-06-23 | 2015-06-23 | LED product of built -in IC chip and WWA wafer and LED support thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204834666U true CN204834666U (en) | 2015-12-02 |
Family
ID=54692230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520432169.4U Active CN204834666U (en) | 2015-06-23 | 2015-06-23 | LED product of built -in IC chip and WWA wafer and LED support thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN204834666U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275322A (en) * | 2017-06-27 | 2017-10-20 | 东莞市欧思科光电科技有限公司 | The luminous PLC technology LED in side with IC |
| CN107342020A (en) * | 2017-06-07 | 2017-11-10 | 莱特泰克（昆山）光电科技有限公司 | Reduce the LED photovoltaic glass and its operation method and production method of circuit number |
| CN108305871A (en) * | 2018-01-26 | 2018-07-20 | 深圳市天成照明有限公司 | The lamp bead of IC built in a kind of more cup type holders |
| CN108389856A (en) * | 2018-01-22 | 2018-08-10 | 东莞中之光电股份有限公司 | A kind of color temperature-tunable LED packagings |
| CN115273681A (en) * | 2022-07-05 | 2022-11-01 | 深圳市森鹏兴科技有限公司 | SMD virtual display screen RGB lamp pearl structure of LED |
-
2015
- 2015-06-23 CN CN201520432169.4U patent/CN204834666U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342020A (en) * | 2017-06-07 | 2017-11-10 | 莱特泰克（昆山）光电科技有限公司 | Reduce the LED photovoltaic glass and its operation method and production method of circuit number |
| CN107275322A (en) * | 2017-06-27 | 2017-10-20 | 东莞市欧思科光电科技有限公司 | The luminous PLC technology LED in side with IC |
| CN110137168A (en) * | 2017-06-27 | 2019-08-16 | 东莞市欧思科光电科技有限公司 | Side with IC shines PLC technology LED |
| CN108389856A (en) * | 2018-01-22 | 2018-08-10 | 东莞中之光电股份有限公司 | A kind of color temperature-tunable LED packagings |
| CN108305871A (en) * | 2018-01-26 | 2018-07-20 | 深圳市天成照明有限公司 | The lamp bead of IC built in a kind of more cup type holders |
| CN115273681A (en) * | 2022-07-05 | 2022-11-01 | 深圳市森鹏兴科技有限公司 | SMD virtual display screen RGB lamp pearl structure of LED |
| CN115273681B (en) * | 2022-07-05 | 2023-12-12 | 深圳市森鹏兴科技有限公司 | RGB lamp bead structure of patch type LED virtual display screen |
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Legal Events
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: No. 3 Shangmei Road, Qishi Town, Dongguan City, Guangdong Province, 523000 Patentee after: DONGGUAN OPCSO OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 523000 Dongguan Ousike Optoelectronic Technology Co., Ltd., located next to Yucai Road East Expressway in Dongshan Village, Qishi Town, Dongguan City, Guangdong Province Patentee before: DONGGUAN OPCSO OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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| CP02 | Change in the address of a patent holder |