CN204832093U - Novel semiconductor gas sensing device - Google Patents
Novel semiconductor gas sensing device Download PDFInfo
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- CN204832093U CN204832093U CN201520400983.8U CN201520400983U CN204832093U CN 204832093 U CN204832093 U CN 204832093U CN 201520400983 U CN201520400983 U CN 201520400983U CN 204832093 U CN204832093 U CN 204832093U
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- ceramic pipe
- sensing device
- semiconductor gas
- gas sensing
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Abstract
The utility model discloses a novel semiconductor gas sensing device, including the ceramic pipe, the ceramic pipe is cylindrical, the ceramic pipe bottom is equipped with electrode lead, ceramic pipe lateral surface middle part is equipped with the heating ring, ceramic pipe lateral surface both ends are equipped with measuring electrode, the heating ring outside is equipped with the insulating layer, scribble the air -sensitive thick liquids on measuring electrode's partial surface and the insulating layer. The utility model provides a measure the subtotal heating part and all establish on the surface of ceramic pipe, realized the integration, have the high advantage of reliability just the utility model discloses the consumption that consumes is lower than heater -type semiconductor component.
Description
Technical field
The utility model belongs to semiconductor applications, particularly relates to a kind of novel semiconductor gas sensing device.
Background technology
Semiconductor gas sensor utilizes semiconductor gas sensor with after gas contact, causes the change of semiconductor property to detect the composition of specific gas or to measure its concentration.
Semiconductor gas sensor can be divided into resistance-type and non-resistor two class substantially.A resistive memory air-sensitive times sensor utilizes gas sensory material, as the gold oxides such as tin oxide (SnO2), manganese oxide (MnO2) make sensitive element, when they absorb the smog of inflammable gas, during as hydrogen, carbon monoxide, alkane, ether, liquor-saturated, benzene and rock gas etc., reduction reaction can be there is, release heat, make that component temperature is corresponding to be increased, resistance changes.Utilize this property treated of semiconductor material, the composition of gas and concentration are transformed into electric signal, carry out monitoring and reporting to the police.
The daily life of gas and the mankind is closely related, and be protect and improve the indispensable means of eco-living environment to the detection of gas, gas sensor plays extremely important effect.When such as, carbonomonoxide concentration in living environment reaches 0.8 ~ 1.15ml/L, just there will be and be short of breath, pulse is accelerated, and the state such as even to faint then has danger dead within a few minutes when reaching 1.84ml/L, therefore must be fast and accurate to Carbon Monoxide Detection.As utilized SnO2 Metal oxide semiconductor gas-sensitiveness material, SnO2 nano particle is prepared by particle micronization and doping process, and as the certain catalyzer of body dopant, finishing is carried out through suitable sintering process, make heater-type slug type CO sensitive element, the CO gas of 0.005% ~ 0.5% scope can be detected.In addition, the detection of the toxic gases such as many explosive inflammable gass, alcohol gas, vehicle exhaust is also had all to use semiconductor gas sensor.Because semiconductor gas sensor have highly sensitive, response is fast, good stability, the simple feature of use, applies extremely extensive.
Semiconductor gas sensor common at present mainly contains 2 types: one is directly-heated type sintering ball-type, and element penetrates into sintering after in metal oxide by spiral fashion heater strip and potential electrode and forms, and working temperature is lower, and heating power is little, and structure is simple; Another kind is heater-type thick film porcelain tube type, element with Al2O3 ceramic pipe for tube core, heater coil then inserts in insulation tube, the outer comb electrode that is coated with of pipe is as measurement pole, and Pt silk is burn-on as electrode pin in two ends, and porcelain tube outer wall gold electrode applies gas sensitive outward, device is become through high temperature sintering, this structure can effectively be avoided measuring interfering with each other of pole and heating part, but has power consumption greatly, the shortcomings such as the bad measurement of heating-up temperature.
At present, no matter be heater-type or heaterless gas sensor, the problem of difference is all repeated in the temperature of reaction of heating, because the factors such as the diameter that the compact that the number of turns that the voltage of temperature and the applying of reaction, the thickness of heater strip, heater strip are wound around, heater strip are wound around, heater strip are wound around are relevant, the repeated poor problem of existence.
Utility model content
For the utility model that solves the problem provides a kind of novel semiconductor gas sensing device.Measure portion in the utility model and heating part are all located at the surface of ceramic pipe, achieve integration, have the high advantage of reliability and the power dissipation ratio heater-type semiconductor element that consumes of the utility model is lower.
For reaching above-mentioned technique effect, the technical solution of the utility model is:
A novel semiconductor gas sensing device, comprises ceramic pipe, and described ceramic pipe is cylindrical; Contact conductor is provided with bottom ceramic pipe; Heating ring is provided with in the middle part of ceramic pipe lateral surface; Ceramic pipe lateral surface two ends are provided with potential electrode; Heating ring outside is provided with insulation course; The partial outer face of potential electrode and insulation course scribble air-sensitive slurry.
Further improvement, the thickness of described insulation course is 50nm.
Further improvement, described ceramic pipe is connected on base, and base is provided with metal shell, and metal shell top is provided with stainless (steel) wire, and described stainless (steel) wire is double-layer stainless steel net, and the network interface size of stainless (steel) wire is 100 orders.
Advantage of the present utility model:
1, gas sensitive device heating-up temperature quantitative problem is solved, no matter be heaterless or the semiconductor devices of heater-type at present, all be entwined by heater strip, its heating-up temperature applies voltage by two ends, the factor such as the number of turns and diameter thereof that is wound around determines, exist uncertain, the utility model, by semiconductor technology, directly prepares heating collar on ceramic pipe, the parameters such as its resistance can be obtained accurately, also can obtain the lower temperature value of different voltage accurately.
2, reduce power consumption, the utility model take ceramic pipe as substrate, directly prepares heating collar at its tube-surface, simultaneously on heating collar, the insulation course of plating one deck about 50nm, sensitive material is then directly coated in insulation course and part potential electrode, compare heater-type heating, can power consumption be reduced.
3, measure portion and heating integral, integrated, adds the reliability of device.
Accompanying drawing explanation
Fig. 1 gas sensitive device inner structure schematic diagram;
Fig. 2 gas sensitive device inner structure level schematic diagram;
The outside schematic diagram of Fig. 3 gas sensitive device.
Embodiment
Embodiment
A kind of novel semiconductor gas sensing device as Figure 1-3, comprises ceramic pipe 1, and described ceramic pipe 1 is cylindrical; Contact conductor 9 is provided with bottom ceramic pipe 1; Heating ring 2 is provided with in the middle part of ceramic pipe 1 lateral surface; Ceramic pipe 1 lateral surface two ends are provided with potential electrode 4; Heating ring 2 outside is provided with insulation course 3; The partial outer face of potential electrode 4 and insulation course 3 scribble air-sensitive slurry 5.The thickness of described insulation course 3 is 50nm.Described ceramic pipe 1 is connected on base 7, and base 7 is provided with metal shell 8, and metal shell 8 top is provided with stainless (steel) wire 6, and described stainless (steel) wire 6 is double-layer stainless steel net, and the network interface size of stainless (steel) wire 6 is 100 orders.
The utility model by add thermoae with measurement pole be placed on the same surface of ceramic pipe, improve globality and the reliability of device.By microelectric technique, silver slurry is added the original heater strip of thermoae replacement, not only can measure the temperature of reaction accurately, also because be directly-heated type, can power consumption be reduced.And this device architecture outclass other device architecture in repeatability.
The explanation of above example just understands core concept of the present utility model for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present utility model, all will change in specific embodiments and applications, in sum, this description should not be construed as restriction of the present utility model.
Claims (3)
1. a novel semiconductor gas sensing device, comprises ceramic pipe (1), it is characterized in that, described ceramic pipe (1) is for cylindrical; Ceramic pipe (1) bottom is provided with contact conductor (9); Heating ring (2) is provided with in the middle part of ceramic pipe (1) lateral surface; Ceramic pipe (1) lateral surface two ends are provided with potential electrode (4); Heating ring (2) outside is provided with insulation course (3); The partial outer face of potential electrode (4) and insulation course (3) scribble air-sensitive slurry (5).
2. semiconductor gas sensing device novel as claimed in claim 1, is characterized in that, the thickness of described insulation course (3) is 50nm.
3. semiconductor gas sensing device novel as claimed in claim 1, it is characterized in that, described ceramic pipe (1) is connected on base (7), base (7) is provided with metal shell (8), metal shell (8) top is provided with stainless (steel) wire (6), described stainless (steel) wire (6) is double-layer stainless steel net, and the network interface size of stainless (steel) wire (6) is 100 orders.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520400983.8U CN204832093U (en) | 2015-06-11 | 2015-06-11 | Novel semiconductor gas sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520400983.8U CN204832093U (en) | 2015-06-11 | 2015-06-11 | Novel semiconductor gas sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204832093U true CN204832093U (en) | 2015-12-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520400983.8U Expired - Fee Related CN204832093U (en) | 2015-06-11 | 2015-06-11 | Novel semiconductor gas sensing device |
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| CN (1) | CN204832093U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931539A (en) * | 2015-06-11 | 2015-09-23 | 福建工程学院 | Novel semiconductor gas sensitive device and manufacture method thereof |
| CN106018480A (en) * | 2016-05-13 | 2016-10-12 | 重庆理工大学 | Indirectly-heated ammonia gas sensor and manufacturing method thereof |
-
2015
- 2015-06-11 CN CN201520400983.8U patent/CN204832093U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931539A (en) * | 2015-06-11 | 2015-09-23 | 福建工程学院 | Novel semiconductor gas sensitive device and manufacture method thereof |
| CN104931539B (en) * | 2015-06-11 | 2017-12-19 | 福建工程学院 | A kind of semiconductor gas sensing device and preparation method thereof |
| CN106018480A (en) * | 2016-05-13 | 2016-10-12 | 重庆理工大学 | Indirectly-heated ammonia gas sensor and manufacturing method thereof |
| CN106018480B (en) * | 2016-05-13 | 2018-08-24 | 重庆理工大学 | A kind of heater-type ammonia gas sensor and preparation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 Termination date: 20180611 |