CN204825137U - Can improve equipment work efficiency's sensor monocrystalline silicon etching device - Google Patents
Can improve equipment work efficiency's sensor monocrystalline silicon etching device Download PDFInfo
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- CN204825137U CN204825137U CN201520491978.2U CN201520491978U CN204825137U CN 204825137 U CN204825137 U CN 204825137U CN 201520491978 U CN201520491978 U CN 201520491978U CN 204825137 U CN204825137 U CN 204825137U
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- reaction chamber
- rack
- work efficiency
- etching device
- equipment work
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Abstract
The utility model discloses a can improve equipment work efficiency's sensor monocrystalline silicon etching device, it is provided with solenoid including reacting chamber, the reacting chamber outside, the reacting chamber outside is provided with a plurality ofly placeeing end frame on the horizontal direction, what each place the end frame all circularizes the extension along the side end face of reacting chamber, and solenoid is fixed in placeeing that it corresponds and holds the up end that puts up, a plurality of putting is connected through the support member that extends in vertical orientation between the end frame, the outside of reacting chamber is provided with a plurality of lift lead screws, and it is connected to the setting at the elevator motor of reacting chamber up end, the lift lead screw with place end frame fixed connection each other, adopt above -mentioned technical scheme's can improve equipment work efficiency's sensor monocrystalline silicon etching device, its accessible lift lead screw drive solenoid go up and down to make the whole machining precision of batch processing's monocrystalline silicon to improve, and make the holistic technology efficiency of sensor get a promotion.
Description
Technical field
The present invention relates to a kind of processing unit of semiconductor components and devices, especially a kind of sensor silicon single crystal etching device improving equipment work efficiency.
Background technology
Sensor silicon single crystal, in the course of processing, all needs to carry out etching processing to it; In existing lithography process, it overlays on horse often through by multiple silicon single crystal, and by importing reactant gases to horse position, and make reactant gases produce plasma body under electric field environment, to etch silicon single crystal; But in existing etching device, because the position of solenoid is relatively fixing, cause it to be difficult to process uniformly the reactant gases of each position in reaction vessel, thus cause the overall processing time to be extended, working efficiency is affected.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of sensor silicon single crystal etching device, and it, by reducing the fraction defective of each position silicon single crystal in reaction chamber, is improved to make sensor integral production efficiency.
For solving the problems of the technologies described above, the present invention relates to a kind of sensor silicon single crystal etching device improving equipment work efficiency, it includes reaction chamber, the upper end of reaction chamber is provided with air duct, it is connected to the source of the gas room being arranged on reaction chamber outside, the bottom of reaction chamber is provided with pump-line, and it is connected to the vacuum pump being arranged on reaction chamber outside; The axial location of described reaction chamber is provided with horse, and it is connected to the horse rotating mechanism being arranged on reaction chamber outside; Described reaction chamber arranged outside has solenoid; Described reaction chamber outer setting has multiple storing end-rack in the horizontal direction, each put end-rack all circularize extension along the side end face of reaction chamber, described storing end-rack and solenoid one_to_one corresponding, each solenoid is all fixed on the upper surface of the storing end-rack corresponding to it; The supporting rod extended by the vertical direction between multiple storing end-rack is connected; The outer setting of described reaction chamber has multiple elevating screw, and it is connected to the lifting motor being arranged on reaction chamber upper surface, and in described elevating screw and multiple storing end-rack, the storing end-rack being positioned at extreme higher position is fixed to one another connection.
As a modification of the present invention, be provided with at least 3 supporting rods between adjacent two storing end-rack, multiple supporting rod becomes Rotational Symmetry about the axis of reaction chamber.Adopt above-mentioned design, its by multiple supporting rod to make can realize stable connection between multiple storing end-rack.
As a modification of the present invention, describedly improve in the sensor silicon single crystal etching device of equipment work efficiency, elevating screw and supporting rod one_to_one corresponding, each elevating screw is all connected with a lifting motor.Adopt above-mentioned design, it makes supporting rod by multiple lifting motor, when storing end-rack and solenoid are elevated under the driving of elevating screw, can keep satisfactory stability in real time.
As a modification of the present invention, described improvement in the sensor silicon single crystal etching device of equipment work efficiency is provided with four supporting rods, in each root supporting rod and multiple storing end-rack, the crossing end being positioned at the storing end-rack of extreme higher position is all fixedly connected with an elevating screw, and every root elevating screw is connected respectively to lifting motor.Adopt above-mentioned design, it can make multiple connection of storing end-rack and the stability of lifting be able to further improvement.
As a modification of the present invention, each is put in end-rack and is provided with multiple guide deflection sheave; Described guide deflection sheave extends between storing end-rack and reaction chamber, and the outer wall of itself and reaction chamber fits.Adopt above-mentioned design, it makes to put end-rack in lifting process, by the rolling of guide deflection sheave on reacting outdoor wall to realize putting end-rack together with solenoid stability diametrically, be subjected to displacement to avoid it to cause the inner silicon single crystal etching precision of reaction chamber to be affected.
As a modification of the present invention, each is put in end-rack, and it is provided with a guide deflection sheave with the intersection location of supporting rod, and it can make storing end-rack be able to further improvement together with the radial stability of solenoid.
As a modification of the present invention, in the outer wall of reaction chamber, the correspondence position of guide deflection sheave is provided with the guiding track vertically extended, and described guide deflection sheave extends to guiding track inside.Adopt above-mentioned design, its movement locus being arranged so that guide deflection sheave by guiding track is more accurate, offsets to avoid it.
As a modification of the present invention, be provided with preventing rubber layer on the inwall of described guiding track, it can reduce the mutual loss of guide deflection sheave and reaction chamber.
Adopt the sensor silicon single crystal etching device of the improved equipment work efficiency of technique scheme, it is by being arranged on the storing end-rack of reaction chamber outside to be fixed solenoid, put end-rack to be elevated under the driving of elevating screw, also can be elevated to make solenoid thereupon; Solenoid is in lifting process, its electric field distribution produced in reaction chamber inside also can carry out real-time change, thus make the electric field distribution in reaction chamber more even, and in reaction chamber, the reactant gases of each position is under the effect of above-mentioned electric field, its distribution of plasma body produced is also more even, and then makes in reaction chamber, and the craft precision of the etching technics that the silicon single crystal of each position carries out all can be reached desirability.Said apparatus makes the overall processing precision of the silicon single crystal of batch processing be improved, and to avoid the appearance of defect ware, thus the process efficiency of sensor entirety is got a promotion.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention;
Fig. 2 is reaction chamber horizontal sectional view in the present invention;
Reference numerals list:
1-reaction chamber, 2-air duct, 3-source of the gas room, 4-pump-line, 5-vacuum pump, 6-horse, 7-horse rotating mechanism, 8-solenoid, 9-storing end-rack, 10-supporting rod, 11-elevating screw, 12-lifting motor, 13-guide deflection sheave, 14-guiding track.
Embodiment
Below in conjunction with embodiment, illustrate the present invention further, following embodiment should be understood and be only not used in for illustration of the present invention and limit the scope of the invention.It should be noted that, the word "front", "rear" of use is described below, "left", "right", "up" and "down" refer to direction in accompanying drawing, word " interior " and " outward " refer to the direction towards or away from particular elements geometric centre respectively.
Embodiment 1
A kind of sensor silicon single crystal etching device improving equipment work efficiency as shown in Figure 1, it includes reaction chamber 1, the upper end of reaction chamber 1 is provided with air duct 2, it is connected to the source of the gas room 3 being arranged on reaction chamber 1 outside, the bottom of reaction chamber 1 is provided with pump-line 4, and it is connected to the vacuum pump 5 being arranged on reaction chamber 1 outside; The axial location of described reaction chamber 1 is provided with horse 6, and it is connected to the horse rotating mechanism 7 being arranged on reaction chamber 1 outside, and it specifically includes the turning axle being connected to horse 7, and is arranged on the rotating machine of reaction chamber 1 outside; Described reaction chamber 1 arranged outside has solenoid 8.
Described reaction chamber 1 outer setting has multiple storing end-rack 9 in the horizontal direction, each put end-rack 9 all circularize extension along the side end face of reaction chamber 1, described storing end-rack 9 and solenoid 8 one_to_one corresponding, each solenoid 8 is all fixed on the upper surface of the storing end-rack 9 corresponding to it; The supporting rod 10 extended by the vertical direction between multiple storing end-rack 9 is connected; The outer setting of described reaction chamber 1 has multiple elevating screw 11, and it is connected to the lifting motor 12 being arranged on reaction chamber 1 upper surface, and described elevating screw 12 is with multiple storing end-rack 9, and the storing end-rack 9 being positioned at extreme higher position is fixed to one another connection.
As a modification of the present invention, as shown in Figure 2, described improvement in the sensor silicon single crystal etching device of equipment work efficiency is provided with four supporting rods 10, each root supporting rod 10 is with multiple storing end-rack 9, the crossing end being positioned at the storing end-rack 9 of extreme higher position is all fixedly connected with an elevating screw 11, and every root elevating screw 11 has been connected respectively a lifting motor 12.Adopt above-mentioned design, its by multiple supporting rod to make can realize stable connection between multiple storing end-rack, and it makes supporting rod by multiple lifting motor, when storing end-rack and solenoid are elevated under the driving of elevating screw, satisfactory stability can be kept in real time.
Adopt the sensor silicon single crystal etching device of the improved equipment work efficiency of technique scheme, it is by being arranged on the storing end-rack of reaction chamber outside to be fixed solenoid, put end-rack to be elevated under the driving of elevating screw, also can be elevated to make solenoid thereupon; Solenoid is in lifting process, its electric field distribution produced in reaction chamber inside also can carry out real-time change, thus make the electric field distribution in reaction chamber more even, and in reaction chamber, the reactant gases of each position is under the effect of above-mentioned electric field, its distribution of plasma body produced is also more even, and then makes in reaction chamber, and the craft precision of the etching technics that the silicon single crystal of each position carries out all can be reached desirability.Said apparatus makes the overall processing precision of the silicon single crystal of batch processing be improved, and to avoid the appearance of defect ware, thus the process efficiency of sensor entirety is got a promotion.
Embodiment 2
As a modification of the present invention, each is put in end-rack 9 and is provided with multiple guide deflection sheave 13; Described guide deflection sheave 13 extends between storing end-rack 9 and reaction chamber 1, and the outer wall of itself and reaction chamber 1 fits.Adopt above-mentioned design, it makes to put end-rack in lifting process, by the rolling of guide deflection sheave on reacting outdoor wall to realize putting end-rack together with solenoid stability diametrically, be subjected to displacement to avoid it to cause the inner silicon single crystal etching precision of reaction chamber to be affected.
As a modification of the present invention, each is put in end-rack 9, and it is provided with a guide deflection sheave 13 with the intersection location of supporting rod 10, and it can make storing end-rack be able to further improvement together with the radial stability of solenoid.
All the other feature & benefits of the present embodiment are all identical with embodiment 1.
Embodiment 3
As a modification of the present invention, in the outer wall of reaction chamber 1, the correspondence position of guide deflection sheave 13 is provided with the guiding track 14 vertically extended, and it is inner that described guide deflection sheave 13 extends to guiding track 14.Adopt above-mentioned design, its movement locus being arranged so that guide deflection sheave by guiding track is more accurate, offsets to avoid it.
As a modification of the present invention, be provided with preventing rubber layer on the inwall of described guiding track 14, it can reduce the mutual loss of guide deflection sheave and reaction chamber.
All the other feature & benefits of the present embodiment are all identical with embodiment 2.
Claims (8)
1. one kind can be improved the sensor silicon single crystal etching device of equipment work efficiency, it includes reaction chamber, the upper end of reaction chamber is provided with air duct, it is connected to the source of the gas room being arranged on reaction chamber outside, the bottom of reaction chamber is provided with pump-line, and it is connected to the vacuum pump being arranged on reaction chamber outside; The axial location of described reaction chamber is provided with horse, and it is connected to the horse rotating mechanism being arranged on reaction chamber outside; Described reaction chamber arranged outside has solenoid; It is characterized in that, described reaction chamber outer setting has multiple storing end-rack in the horizontal direction, each put end-rack all circularize extension along the side end face of reaction chamber, described storing end-rack and solenoid one_to_one corresponding, each solenoid is all fixed on the upper surface of the storing end-rack corresponding to it; The supporting rod extended by the vertical direction between multiple storing end-rack is connected; The outer setting of described reaction chamber has multiple elevating screw, and it is connected to the lifting motor being arranged on reaction chamber upper surface, and in described elevating screw and multiple storing end-rack, the storing end-rack being positioned at extreme higher position is fixed to one another connection.
2. according to the sensor silicon single crystal etching device improving equipment work efficiency according to claim 1, it is characterized in that, be provided with at least 3 supporting rods between adjacent two storing end-rack, multiple supporting rod becomes Rotational Symmetry about the axis of reaction chamber.
3. according to the sensor silicon single crystal etching device improving equipment work efficiency according to claim 2, it is characterized in that, describedly improve in the sensor silicon single crystal etching device of equipment work efficiency, elevating screw and supporting rod one_to_one corresponding, each elevating screw is all connected with a lifting motor.
4. according to the sensor silicon single crystal etching device improving equipment work efficiency according to claim 3, it is characterized in that, described improvement in the sensor silicon single crystal etching device of equipment work efficiency is provided with four supporting rods, in each root supporting rod and multiple storing end-rack, the crossing end being positioned at the storing end-rack of extreme higher position is all fixedly connected with an elevating screw, and every root elevating screw is connected respectively to lifting motor.
5. according to the sensor silicon single crystal etching device improving equipment work efficiency according to claim 4, it is characterized in that, each is put in end-rack and is provided with multiple guide deflection sheave; Described guide deflection sheave extends between storing end-rack and reaction chamber, and the outer wall of itself and reaction chamber fits.
6. according to the sensor silicon single crystal etching device improving equipment work efficiency according to claim 5, it is characterized in that, each is put in end-rack, and the intersection location of itself and supporting rod is provided with a guide deflection sheave.
7. according to the sensor silicon single crystal etching device improving equipment work efficiency according to claim 6, it is characterized in that, in the outer wall of reaction chamber, the correspondence position of guide deflection sheave is provided with the guiding track vertically extended, and described guide deflection sheave extends to guiding track inside.
8., according to the sensor silicon single crystal etching device improving equipment work efficiency according to claim 7, it is characterized in that, on the inwall of described guiding track, be provided with preventing rubber layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520491978.2U CN204825137U (en) | 2015-07-09 | 2015-07-09 | Can improve equipment work efficiency's sensor monocrystalline silicon etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520491978.2U CN204825137U (en) | 2015-07-09 | 2015-07-09 | Can improve equipment work efficiency's sensor monocrystalline silicon etching device |
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| CN204825137U true CN204825137U (en) | 2015-12-02 |
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| CN201520491978.2U Withdrawn - After Issue CN204825137U (en) | 2015-07-09 | 2015-07-09 | Can improve equipment work efficiency's sensor monocrystalline silicon etching device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104988582A (en) * | 2015-07-09 | 2015-10-21 | 江苏德尔森传感器科技有限公司 | Sensor single crystal silicon etching device capable of improving working efficiency of device |
-
2015
- 2015-07-09 CN CN201520491978.2U patent/CN204825137U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104988582A (en) * | 2015-07-09 | 2015-10-21 | 江苏德尔森传感器科技有限公司 | Sensor single crystal silicon etching device capable of improving working efficiency of device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160219 Address after: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Patentee after: Mou Heng Address before: 215600 Jiangsu, Suzhou, Zhangjiagang Free Trade Zone, Hong Kong and Macao road sensor industry park Patentee before: The gloomy sensor Science and Technology Ltd. of Jiangsu Dare |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160318 Address after: 400714 Chongqing District of Beibei city and high-tech Industrial Park Road No. 5, No. 317 of the Milky way Patentee after: Chongqing Adelson Sensor Technology Co., Ltd. Address before: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Patentee before: Mou Heng |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20151202 Effective date of abandoning: 20170811 |