CN204810885U - Low temperature plasma wheat class crop seed processing apparatus - Google Patents

Low temperature plasma wheat class crop seed processing apparatus Download PDF

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Publication number
CN204810885U
CN204810885U CN201520434078.4U CN201520434078U CN204810885U CN 204810885 U CN204810885 U CN 204810885U CN 201520434078 U CN201520434078 U CN 201520434078U CN 204810885 U CN204810885 U CN 204810885U
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CN
China
Prior art keywords
electrode
low temperature
temperature plasma
treatment
bottom electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201520434078.4U
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Chinese (zh)
Inventor
张波
吴正勇
周保牛
邵汉良
张洪光
徐佳豪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Vocational Institute of Mechatronic Technology
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Changzhou Vocational Institute of Mechatronic Technology
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Priority to CN201520434078.4U priority Critical patent/CN204810885U/en
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Publication of CN204810885U publication Critical patent/CN204810885U/en
Expired - Fee Related legal-status Critical Current
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Abstract

The utility model relates to a low temperature plasma wheat class crop seed processing apparatus, connect skill mouth (4) and vacuum extraction opening (5), its characterized in that including vacuum vessel (1), electrode subassembly (2), electrical power generating system (6), gaseous air inlet (3), gaseous phase: the casing of vacuum vessel (1) comprises insulating layer (1 -1) and stainless steel shielding layer (1 -2). The utility model discloses can conveniently realize the activation of wheat class crop seed, simple structure is reasonable, convenient operation, RF shielding nature is good, stable height, result good reproducibility discharge.

Description

A kind of low temperature plasma wheat crops device for treatment of seeds
Technical field
The utility model relates to a kind of seed processing machine, particularly relates to a kind of low temperature plasma wheat crops device for treatment of seeds.
Background technology
The process that discharge of plasma in low temperature technology is usually used in all kinds of seed crop activates, and wherein discharge of plasma in low temperature apparatus structure and electrode assemblie design are its key problem in technology.Conventional discharge device generally adopts single to electrode discharge, power supply and space availability ratio low, electrode is as adopted electromagnetic shielding, its structural design function singleness, low temperature plasma can not effectively be concentrated, energy loss is comparatively large, and this will certainly have influence on validity and the repeatability of wheat crops seed treatment effect.Through finding the literature search of prior art, existing document mainly concentrates on the electric discharge of low temperature plasma single-layer electrodes or simply shielding design is to carry out seed treatment modification, and design of Electromagnetic Shielding is simple, electric discharge is not concentrated.In further retrieving, not yet find the identical relevant report about the apparatus for low-temperature plasma treatment for activating wheat crops seed vitality.
Utility model content
The purpose of this utility model overcomes the deficiencies in the prior art, provides a kind of and more easily can realize the low temperature plasma wheat crops device for treatment of seeds that wheat crops seed activates, result is reproducible.
The technical scheme realizing above-mentioned purpose is: a kind of low temperature plasma wheat crops device for treatment of seeds, comprise vacuum tank, electrode assemblie, power-supply system, gas inlet, gas phase graft mouth and vacuum pumping opening, the housing of described vacuum tank is made up of insulating barrier and stainless steel screen layer.
Further, described electrode assemblie adopts polytetrafluoroethylene (PTFE) to be fixed on true appearance on container casing inwall, and electrode assemblie is made up of top electrode and bottom electrode, and the distance between top electrode and bottom electrode is fixed as 20mm.
Further, thickness of insulating layer is 4-6mm, and stainless steel shielding thickness is 1-2mm.
Further, described top electrode and bottom electrode adopt double shield structure, with metallic copper, block polytetrafluorethylene outer layer is closed parcel, again by the middle of block polytetrafluoroethylene (PTFE) by emptying, form electric discharge cavity, cavity places top electrode, bottom electrode below, top electrode and bottom electrode thickness 1-2mm, form capacitive discharge.。
Adopt after technique scheme, there is following beneficial effect: more easily can realize wheat crops seed and activate, simple and reasonable, easy to operate, radio shielding is good, discharge stability is high, result is reproducible.。
Accompanying drawing explanation
Fig. 1 structural representation of the present utility model;
Wherein, 1. vacuum tank; 1-1. insulating barrier; 1-2. stainless steel screen layer; 2. electrode assemblie; 2-1. top electrode; 2-2. bottom electrode; 3. gas inlet; 4. gas phase graft mouth; 5. vacuum pumping opening; 6. power-supply system.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.
As shown in Figure 1, a kind of low temperature plasma wheat crops device for treatment of seeds, comprise vacuum tank 1, electrode assemblie 2, power-supply system 6, gas inlet 3, gas phase graft mouth 4 and vacuum pumping opening 5, the housing of described vacuum tank 1 is made up of insulating barrier 1-1 and stainless steel screen layer 1-2.
For improving the stability of electric discharge further, described electrode assemblie 2 adopts polytetrafluoroethylene (PTFE) to be fixed on the true inwall holding container 1 housing, and electrode assemblie 2 is made up of top electrode 2-1 and bottom electrode 2-2, the distance of top electrode 2-1 between bottom electrode 2-2 is fixed as 20mm.
For improving the shielding properties of radio frequency further, insulating barrier 1-1 thickness is 4-6mm, and stainless steel screen layer 1-2 thickness is 1-2mm.
For improving the Repeatability of process further, described top electrode 2-1 and bottom electrode 2-2 adopts double shield structure, with metallic copper, block polytetrafluorethylene outer layer is closed parcel, again by the middle of block polytetrafluoroethylene (PTFE) by emptying, form electric discharge cavity, top electrode 2-1, bottom electrode 2-2, top electrode 2-1 and bottom electrode 2-2 thickness 1-2mm are placed below in cavity, forms capacitive discharge.
With above-mentioned according to desirable embodiment of the present utility model for enlightenment, by above-mentioned description, relevant staff in the scope not departing from this utility model technological thought, can carry out various change and amendment completely.The technical scope of this utility model is not limited to the content on specification, must determine its technical scope according to right.

Claims (4)

1. a low temperature plasma wheat crops device for treatment of seeds, comprise vacuum tank (1), electrode assemblie (2), power-supply system (6), gas inlet (3), gas phase graft mouth (4) and vacuum pumping opening (5), it is characterized in that: the housing of described vacuum tank (1) is made up of insulating barrier (1-1) and stainless steel screen layer (1-2).
2. a kind of low temperature plasma wheat crops device for treatment of seeds according to claim 1, it is characterized in that: described electrode assemblie (2) adopts polytetrafluoroethylene (PTFE) to be fixed on the inwall of very container (1) housing, and electrode assemblie (2) is made up of top electrode (2-1) and bottom electrode (2-2), the distance between top electrode (2-1) and bottom electrode (2-2) is fixed as 20mm.
3. a kind of low temperature plasma wheat crops device for treatment of seeds according to claim 2, it is characterized in that: insulating barrier (1-1) thickness is 4-6mm, stainless steel screen layer (1-2) thickness is 1-2mm.
4. a kind of low temperature plasma wheat crops device for treatment of seeds according to claim 3, it is characterized in that: described top electrode (2-1) and bottom electrode (2-2) adopt double shield structure, with metallic copper, block polytetrafluorethylene outer layer is closed parcel, again by the middle of block polytetrafluoroethylene (PTFE) by emptying, form electric discharge cavity, cavity is placed below top electrode (2-1), bottom electrode (2-2), top electrode (2-1) and bottom electrode (2-2) thickness 1-2mm, form capacitive discharge.
CN201520434078.4U 2015-06-23 2015-06-23 Low temperature plasma wheat class crop seed processing apparatus Expired - Fee Related CN204810885U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520434078.4U CN204810885U (en) 2015-06-23 2015-06-23 Low temperature plasma wheat class crop seed processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520434078.4U CN204810885U (en) 2015-06-23 2015-06-23 Low temperature plasma wheat class crop seed processing apparatus

Publications (1)

Publication Number Publication Date
CN204810885U true CN204810885U (en) 2015-12-02

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Family Applications (1)

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CN201520434078.4U Expired - Fee Related CN204810885U (en) 2015-06-23 2015-06-23 Low temperature plasma wheat class crop seed processing apparatus

Country Status (1)

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CN (1) CN204810885U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107306536A (en) * 2017-07-25 2017-11-03 常州机电职业技术学院 The method that plasma seed activates device and seed activation
CN107633993A (en) * 2017-08-17 2018-01-26 南京市蔬菜科学研究所 A kind of cold plasma double glow discharge vegetables and fruits device for treatment of seeds
CN109302790A (en) * 2018-06-01 2019-02-01 苏州海唐智能装备有限公司 A kind of novel plasma powder modifying device
CN109875045A (en) * 2019-03-11 2019-06-14 常州机电职业技术学院 Fructus lycii modification device and processing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107306536A (en) * 2017-07-25 2017-11-03 常州机电职业技术学院 The method that plasma seed activates device and seed activation
CN107633993A (en) * 2017-08-17 2018-01-26 南京市蔬菜科学研究所 A kind of cold plasma double glow discharge vegetables and fruits device for treatment of seeds
CN107633993B (en) * 2017-08-17 2019-03-05 南京市蔬菜科学研究所 A kind of cold plasma double glow discharge vegetables and fruits device for treatment of seeds
CN109302790A (en) * 2018-06-01 2019-02-01 苏州海唐智能装备有限公司 A kind of novel plasma powder modifying device
CN109875045A (en) * 2019-03-11 2019-06-14 常州机电职业技术学院 Fructus lycii modification device and processing method

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C14 Grant of patent or utility model
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151202

Termination date: 20200623

CF01 Termination of patent right due to non-payment of annual fee