CN204761280U - PWM control of digit type and drive arrangement - Google Patents
PWM control of digit type and drive arrangement Download PDFInfo
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- CN204761280U CN204761280U CN201520521578.1U CN201520521578U CN204761280U CN 204761280 U CN204761280 U CN 204761280U CN 201520521578 U CN201520521578 U CN 201520521578U CN 204761280 U CN204761280 U CN 204761280U
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Abstract
The utility model discloses a PWM control of digit type and drive arrangement, an electrical unit connects the DSP controller, AND gate U1 and level conversion chip's feeder ear, an electrical unit still connects AND gate U3's feeder ear, the 2nd electrical unit connects the isolating driver unit, the signal input part of a power monitoring unit connects the feeder ear of data signal processing controls ware, the signal input part of the 2nd power monitoring unit connects door module U3's feeder ear, AND gate U1's input is connected to the DSP controller output end, AND gate U1's input is connected to the output of a power monitoring unit, level conversion chip's input is connected to AND gate U1's output, AND gate module U3's input is connected to level conversion chip's output, AND gate module U3's input is connected to the output of the 2nd power monitoring unit, the isolating driver unit is connected to AND gate module U3's output. The utility model discloses can be to various protection fast reactions, reliability height.
Description
Technical field
The utility model relates to powerful MOSFET or IGBT Driving technique field, refers to that a kind of numeric type PWM controls and drive unit particularly.
Background technology
From MOSFET (Metal-Oxide-SemiconductorField-EffectTransistor, metal oxide layer semiconductor field-effect transistor) and IGBT (InsulatedGateBipolarTransistor, insulated gate bipolar transistor) grid-controlled type power device occur since, because it adopts voltage-type to drive, driving power is little, drive circuit is simple, and is widely used.In order to driven MOS FET enters saturation region, need to add enough voltage between grid source electrode, with the maximum current making drain electrode can flow through expection.Meanwhile, high-performance, the MOSFET gate driver circuit of high reliability and low cost more and more becomes the object of people's concern.
And drive circuit also needs the PWM (PulseWidthModulation of prime, pulse width modulation) control the pulse that controls to make the output of power circuit to obtain the equal and width of a series of amplitude not wait to the turn-on and turn-off of MOSFET or IGBT, replace sine wave or the waveform required for other with these pulses.At present; Digital Pulse Width Modulation controls flexibility with it, the advantage such as energy-efficient is widely used in the fields such as communication system, digital power, digital audio system; which overcome the deficiency of stability in analog-modulated and antijamming capability; achieve the total digitalization of modulated process; be conducive to parameter tuning and variable parameter control; and the realization of various defencive function, improve reliability and the precision of control, achieve the flexibility of control.
But the PWM of numeric type control and drive circuit in exist when power supply start, shut down or improper power down time PWM easily there is unordered control, the drive singal being input to MOSFET is occurred abnormal, such as a full-bridge circuit is when the drive singal of upper and lower MOSFET is simultaneously for Gao Shihui causes MOSFET to damage.
Utility model content
The purpose of this utility model will provide a kind of numeric type PWM to control and drive unit exactly, this device is under the guarantee distinctive isolation of PWM drive circuit and driving force prerequisite, add the monitoring to two power supplys in circuit, ensure that the shutoff PWM that whole power circuit can be orderly when startup and shutdown, make it not cause unnecessary harm to MOSFET or IGBT of rear class, improve the reliability of drive circuit.In addition, this numeric type PWM control and drive unit can to various protection fast reactions.
For realizing this object, numeric type PWM designed by the utility model controls and drive unit, it is characterized in that: it comprises Digital Signal Processing controller, pulse width modulation processing unit, isolation drive unit, first power subsystem, second source unit, first power supply supervision unit, second source monitoring unit, wherein, described pulse width modulation processing unit comprises and door module U1, level transferring chip U2 and with door module U3, first power supply signal output of described first power subsystem connects digital signal processing controller and the feeder ear with door module U1 and level transferring chip U2, the second source signal output part of the first power subsystem connects the feeder ear with door module U3, the power supply signal output of described second source unit connects the feeder ear of isolation drive unit, the signal input part of the first power supply supervision unit connects the feeder ear of digital signal processing controller, the feeder ear of the signal input part connection door module U3 of second source monitoring unit, the signal output part of described Digital Signal Processing controller connects the first input end with door module U1, the signal output part of the first power supply supervision unit connects the second input with door module U1, the signal input part of level transferring chip U2 is connected with the output of door module U1, the signal output part of level transferring chip U2 connects the first input end with door module U3, the signal output part of second source monitoring unit connects the second input with door module U3, the described signal input part being connected isolation drive unit with the output of door module U3, the signal output part of isolation drive unit is used for the drive end of connection metal MOSFET or insulated gate bipolar transistor.
The beneficial effects of the utility model:
The utility model is in the distinctive isolation of guarantee pulse width modulation drive circuit, under large driving force prerequisite, add the monitoring (i.e. the first power supply supervision unit and second source monitoring unit) to two power supplys in circuit, ensure that the shutoff pulse width modulation processing unit that whole power circuit can be orderly when startup and shutdown, it is made not cause unnecessary harm to the metal oxide layer semiconductor field-effect transistor of rear class or insulated gate bipolar transistor, improve the reliability of drive circuit, the utility model can to various protection fast reaction, the present invention is made to have higher reliability.
Accompanying drawing explanation
Fig. 1 is structured flowchart of the present utility model;
Fig. 2 be in the utility model isolation drive unit structured flowchart;
Wherein, 1-Digital Signal Processing controller, 2-pulse width modulation processing unit, 3-isolation drive unit, the 4-the first power subsystem, 5-second source unit, the 6-the first power supply supervision unit, 7-second source monitoring unit.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail:
Numeric type PWM as depicted in figs. 1 and 2 controls and drive unit, it comprises Digital Signal Processing controller 1, pulse width modulation processing unit 2, isolation drive unit 3, first power subsystem 4, second source unit 5, first power supply supervision unit 6, second source monitoring unit 7, wherein, described pulse width modulation processing unit 2 comprises and door module U1, level transferring chip U2 and with door module U3, first power supply signal output of described first power subsystem 4 connects digital signal processing controller 1 and the feeder ear with door module U1 and level transferring chip U2, the second source signal output part of the first power subsystem 4 connects the feeder ear with door module U3, the power supply signal output of described second source unit 5 connects the feeder ear of isolation drive unit 3, the signal input part of the first power supply supervision unit 6 connects the feeder ear of digital signal processing controller 1, the feeder ear of the signal input part connection door module U3 of second source monitoring unit 7, the signal output part of described Digital Signal Processing controller 1 connects the first input end with door module U1, the signal output part of the first power supply supervision unit 6 connects the second input with door module U1, the signal input part of level transferring chip U2 is connected with the output of door module U1, the signal output part of level transferring chip U2 connects the first input end with door module U3, the signal output part of second source monitoring unit 7 connects the second input with door module U3, the described signal input part being connected isolation drive unit 3 with the output of door module U3, the signal output part of isolation drive unit 3 is used for the drive end of connection metal MOSFET or insulated gate bipolar transistor.
In technique scheme, described isolation drive unit 3 comprises photoelectric coupling module D1 and pulse width modulation driver module N1 (model is IXDI609SI), the input of described photoelectric coupling module D1 connects the output with door module U3, the output of electric coupling module D1 connects the input of pulse width modulation driver module N1, and the output of pulse width modulation driver module N1 is used for the drive end of connection metal MOSFET or insulated gate bipolar transistor.
In technique scheme, described isolation drive unit 3 also comprises current limliting module and pressure limiting module, described current limliting module comprises resistance R1 and resistance R2, described pressure limiting module comprises diode D2 and diode D3, described resistance R1 is all connected the gate electrode drive signals output of pulse width modulation driver module N1 with one end of resistance R2, the negative pole contact resistance R1 of diode D2 and the other end of resistance R2, the positive pole of diode D2 cathode connecting diode D3, the negative pole of diode D3 connects the source drive signal output part of pulse width modulation driver module N1, the negative pole of diode D2 is used for the gate pole of connection metal MOSFET or insulated gate bipolar transistor, the negative pole of diode D3 is used for the source electrode of connection metal MOSFET or insulated gate bipolar transistor.
In technique scheme, described first power subsystem 4 comprises insulating power supply module U4, power supply chip U5, the feeder ear of described insulating power supply module U4 connects the input of power supply chip U5, the feeder ear of insulating power supply module U4 is powered to door module U3, and the feeder ear of power supply chip U5 is powered to Digital Signal Processing controller 1 with door module U1 and level transferring chip U2.
In technique scheme, the feeder ear of described insulating power supply module U4 exports 5V DC power supply, and the voltage range of the DC power signal of the feeder ear output of power supply chip U5 is at 1 ~ 4V.
In the utility model, Digital Signal Processing controller 1 produces the pulse width modulating signal of 3.3V, the pulse width modulating signal of this 3.3V is by becoming the pulse width modulating signal of 5V after pulse width modulation processing unit 2 process, the pulse width modulating signal of this 5V enters isolation drive unit 3, and isolation drive unit 3 generation has the pulse width modulating signal of positive/negative-pressure for driving metal oxide layer semiconductor field-effect transistor or insulated gate bipolar transistor.First power subsystem 4 powers to Digital Signal Processing controller 1 and pulse width modulation processing unit 2, second source unit 5 powers to isolation drive unit 3, when the power supply of the first power subsystem 4 to digital signal processing controller 1 is reduced to a certain degree, first power supply supervision unit 6 can produce the pulse width modulating signal that a reset signal exports for blocking Digital Signal Processing controller 1, when the first power subsystem 4 is reduced to a certain degree the power supply with door module U3, second source monitoring unit 7 can produce a reset signal for blocking the pulse width modulating signal entering isolation drive unit 3.
The course of work of the present utility model is: when power supply electrifying, because power supply chip U5 is powered by insulating power supply module U4, so the power supply signal of insulating power supply module U4 (5V) foundation more Zao than the power supply signal (being less than 5V) of power supply chip U5, namely second source monitoring unit 7 first works, generate a reset signal to and door module U3, send to level transferring chip U2 the input that locking signal (LOCK2 signal) has blocked isolation drive unit 3 with door module U3, when the power supply signal of power supply chip U5 is set up, first power supply supervision unit 6 starts to reset, now by the pulse width modulating signal being input to pulse width modulation processing unit 2 being blocked with door module U1, after Digital Signal Processing controller 1 has resetted, DSP_RESET (DSP reset signal) signal sets high, after Digital Signal Processing controller 1 initialization completes, PWMEN (the I/O signal of the control PWM) signal of Digital Signal Processing controller 1 is low, pulse width modulating signal is also in blockade, after program self-inspection completes, PWMEN sets high, the pulse width modulating signal of Digital Signal Processing controller 1 enters in pulse width modulation processing unit 2, now the power supply signal 5V voltage of insulating power supply module U4 has been set up, the locking signal LOCK2 signal sent to level transferring chip U2 with door module U3 sets high, pulse width modulating signal starts to enter isolation drive unit 3, now whole numeric type PWM control and drive unit start normal work.When Digital Signal Processing controller 1 receives extraneous guard signal signals such as () overvoltage, overcurrent and superheats of whole power supply; Digital Signal Processing controller 1 can cut out pulse width modulating signal and be set low by PWMEN, shuts down by software with door module U1 duplicate protection.When the power supply shutdown of whole device, due to insulating power supply module U4 (5V power supply) power down more first than the power supply signal (being less than 5V) of power supply chip U5, the pulse width modulating signal of level transferring chip U2 is blocked so second source monitoring unit 7 first resets to door module U3, cut off the input signal of isolation drive unit 3, when power supply signal (the being less than 5V) power down of power supply chip U5, first power supply supervision unit 6 starts to reset, reset signal to door module U1 in the pulse width modulating signal that digital signal processing controller 1 exports is blocked, blocked by two-stage pulse width modulating signal like this and this equipment safety can be made to shut down reliably and the metal oxide layer semiconductor field-effect transistor of rear class or insulated gate bipolar transistor are not caused damage.The content that this specification is not described in detail belongs to the known prior art of professional and technical personnel in the field.
Claims (5)
1. a numeric type PWM controls and drive unit, it is characterized in that: it comprises Digital Signal Processing controller (1), pulse width modulation processing unit (2), isolation drive unit (3), first power subsystem (4), second source unit (5), first power supply supervision unit (6), second source monitoring unit (7), wherein, described pulse width modulation processing unit (2) comprises and door module U1, level transferring chip U2 and with door module U3, first power supply signal output of described first power subsystem (4) connects digital signal processing controller (1) and the feeder ear with door module U1 and level transferring chip U2, the second source signal output part of the first power subsystem (4) connects the feeder ear with door module U3, the power supply signal output of described second source unit (5) connects the feeder ear of isolation drive unit (3), the signal input part of the first power supply supervision unit (6) connects the feeder ear of digital signal processing controller (1), the feeder ear of the signal input part connection door module U3 of second source monitoring unit (7), the signal output part of described Digital Signal Processing controller (1) connects the first input end with door module U1, the signal output part of the first power supply supervision unit (6) connects the second input with door module U1, the signal input part of level transferring chip U2 is connected with the output of door module U1, the signal output part of level transferring chip U2 connects the first input end with door module U3, the signal output part of second source monitoring unit (7) connects the second input with door module U3, the described signal input part being connected isolation drive unit (3) with the output of door module U3, the signal output part of isolation drive unit (3) is used for the drive end of connection metal MOSFET or insulated gate bipolar transistor.
2. numeric type PWM according to claim 1 controls and drive unit, it is characterized in that: described isolation drive unit (3) comprises photoelectric coupling module D1 and pulse width modulation driver module N1, the input of described photoelectric coupling module D1 connects the output with door module U3, the output of electric coupling module D1 connects the input of pulse width modulation driver module N1, and the output of pulse width modulation driver module N1 is used for the drive end of connection metal MOSFET or insulated gate bipolar transistor.
3. numeric type PWM according to claim 2 controls and drive unit, it is characterized in that: described isolation drive unit (3) also comprises current limliting module and pressure limiting module, described current limliting module comprises resistance R1 and resistance R2, described pressure limiting module comprises diode D2 and diode D3, described resistance R1 is all connected the gate electrode drive signals output of pulse width modulation driver module N1 with one end of resistance R2, the negative pole contact resistance R1 of diode D2 and the other end of resistance R2, the positive pole of diode D2 cathode connecting diode D3, the negative pole of diode D3 connects the source drive signal output part of pulse width modulation driver module N1, the negative pole of diode D2 is used for the gate pole of connection metal MOSFET or insulated gate bipolar transistor, the negative pole of diode D3 is used for the source electrode of connection metal MOSFET or insulated gate bipolar transistor.
4. numeric type PWM according to claim 1 controls and drive unit, it is characterized in that: described first power subsystem (4) comprises insulating power supply module U4, power supply chip U5, the feeder ear of described insulating power supply module U4 connects the input of power supply chip U5, the feeder ear of insulating power supply module U4 is powered to door module U3, and the feeder ear of power supply chip U5 is to Digital Signal Processing controller (1) and power with door module U1 and level transferring chip U2.
5. numeric type PWM according to claim 4 controls and drive unit, it is characterized in that: the feeder ear of described insulating power supply module U4 exports 5V DC power supply, and the voltage range of the DC power signal of the feeder ear output of power supply chip U5 is at 1 ~ 4V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520521578.1U CN204761280U (en) | 2015-07-17 | 2015-07-17 | PWM control of digit type and drive arrangement |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520521578.1U CN204761280U (en) | 2015-07-17 | 2015-07-17 | PWM control of digit type and drive arrangement |
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| CN204761280U true CN204761280U (en) | 2015-11-11 |
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| CN201520521578.1U Active CN204761280U (en) | 2015-07-17 | 2015-07-17 | PWM control of digit type and drive arrangement |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112892A (en) * | 2019-04-30 | 2019-08-09 | 湖北三江航天万峰科技发展有限公司 | A kind of power device drive dynamic control device |
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2015
- 2015-07-17 CN CN201520521578.1U patent/CN204761280U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112892A (en) * | 2019-04-30 | 2019-08-09 | 湖北三江航天万峰科技发展有限公司 | A kind of power device drive dynamic control device |
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