CN204731408U - For the switching line phase modulation circuit of radar - Google Patents
For the switching line phase modulation circuit of radar Download PDFInfo
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- CN204731408U CN204731408U CN201520470814.1U CN201520470814U CN204731408U CN 204731408 U CN204731408 U CN 204731408U CN 201520470814 U CN201520470814 U CN 201520470814U CN 204731408 U CN204731408 U CN 204731408U
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Abstract
The utility model discloses the switching line phase modulation circuit for radar, 4 diodes are respectively: the first diode, second diode, 3rd diode, 4th diode, the negative pole of the first diode is connected with the positive pole of the 3rd diode, the negative pole of the 4th diode is connected with the positive pole of the second diode, the negative pole of the second diode is connected with the positive pole of the first diode by short microstrip transmission line, the negative pole of the 3rd diode is connected with the positive pole of the 4th diode by long microstrip transmission line, line between first diode the 3rd diode is also connected with the first electric capacity of access signal, line between 4th diode and the first diode is also connected with the output terminal of the second electric capacity, also comprise the first polarity-inverting amplifier being connected with phase-modulated signal, first polarity-inverting amplifier is in series with the second polarity-inverting amplifier, second polarity-inverting amplifier is in series with resistance, the input end of resistance is connected with the second polarity-inverting amplifier, line between 4th diode and the first diode is connected with the output terminal of resistance.
Description
Technical field
The utility model relates to phase-modulated signal technology, specifically refers to the switching line phase modulation circuit for radar.
Background technology
Phase modulation realizes common are three kinds of methods, is variable phase-shifting method phase modulation, variable time delay method phase modulation, vector synthesis phase modulation respectively.When inputting microwave and changing, above-mentioned common phase modulation method then needs to change a large amount of parts, and also namely arrange a set of corresponding phase modulation circuit in addition according to input microwave parameters, therefore above-mentioned three kinds of phase modulation methods are not suitable with radar front end technology very much.Therefore, we need the different microwave input of a kind of simple adaptation of design, and design the labile phase modulation circuit of a set of appearance.
Utility model content
The purpose of this utility model is to provide a kind of switching line phase modulation circuit for radar
,for adapting to the input of different microwave, and design the labile phase modulation circuit of a set of appearance.
The purpose of this utility model is achieved through the following technical solutions: for the switching line phase modulation circuit of radar, it is characterized in that: comprise 4 diodes, 4 diodes are respectively: the first diode, second diode, 3rd diode, 4th diode, the negative pole of the first diode is connected with the positive pole of the 3rd diode, the negative pole of the 4th diode is connected with the positive pole of the second diode, the negative pole of the second diode is connected with the positive pole of the first diode by short microstrip transmission line, the negative pole of the 3rd diode is connected with the positive pole of the 4th diode by long microstrip transmission line, line between first diode the 3rd diode is also connected with the first electric capacity of access signal, line between 4th diode and the first diode is also connected with the output terminal of the second electric capacity, also comprise the first polarity-inverting amplifier being connected with phase-modulated signal, first polarity-inverting amplifier is in series with the second polarity-inverting amplifier, second polarity-inverting amplifier is in series with resistance, the input end of resistance is connected with the second polarity-inverting amplifier, line between 4th diode and the first diode is connected with the output terminal of resistance, line between first polarity-inverting amplifier and the second polarity-inverting amplifier draws the output terminal receiving the first electric capacity.
The design concept of foregoing circuit is: after adopting foregoing circuit design, because the microstrip transmission line adopting two length different is arranged in circuit, (or other any microwave transmission lines), the first diode, the second diode, the 3rd diode, the 4th diode are the PIN diode that 4 performances are consistent.When both sides diode complementary is biased, when the first diode, the second diode current flow, the 3rd diode, the 4th diode are in cut-off state, and CF signal is transmitted through short microstrip transmission line.Otherwise when the first diode, the second diode cut-off, the 3rd diode, the 4th diode are in conducting state, and CF signal is transmitted through long microstrip transmission line.Obviously, because long microstrip transmission line is different with short microstrip transmission line length, phase shift effect is thus caused.
In foregoing circuit,
Second electric capacity is also in series with isolator.
First diode, the second diode, the 3rd diode, the 4th diode are PIN diode.
The length of long microstrip transmission line is greater than the length of short microstrip transmission line.
The microstrip transmission line adopting two length different is arranged in circuit, and (or other any microwave transmission lines), the first diode, the second diode, the 3rd diode, the 4th diode are the PIN diode that 4 performances are consistent.When both sides diode complementary is biased, when the first diode, the second diode current flow, the 3rd diode, the 4th diode are in cut-off state, and CF signal is transmitted through short microstrip transmission line.Otherwise when the first diode, the second diode cut-off, the 3rd diode, the 4th diode are in conducting state, and CF signal is transmitted through long microstrip transmission line.Obviously, because long microstrip transmission line is different with short microstrip transmission line length, phase shift effect is thus caused.Suppose that the length of long microstrip transmission line is greater than the length of short microstrip transmission line.Then phase modulation phase place is: F=B(L2-L1)=2 π/Q* △ L, B is transmission line phase constant, and Q is waveguide wavelength, and △ L is the length that the length of long microstrip transmission line deducts short microstrip transmission line.Therefore, realize 0/ π phase modulation, then, the length that the length of long microstrip transmission line deducts short microstrip transmission line is △ L, the half of the waveguide wavelength of input to be Q, △ L be Q.Therefore when microwave signal changes, namely, when input waveguide wavelength Q changes, we only need to change the length of long microstrip transmission line and the length of short microstrip transmission line, the change of this microwave signal can be adapted to, and do not need to change other electronic components in circuit, and the length of the length of long microstrip transmission line and short microstrip transmission line the most easily changes, only need to carry out the different long microstrip transmission line of welding and short microstrip transmission line, it is quick that operation is very easy, the special phase modulation circuit adapting to experiment, also the phase modulation process of radar microwave is particularly suitable for.
In sum, the beneficial effects of the utility model are: the phase modulation that can cause 0/ π, the length arranging long microstrip transmission line and short microstrip transmission line that can also be corresponding according to the parameter of input waveguide, thus adapt to varying input signal, can cause the phase modulation of 0/ π.
Accompanying drawing explanation
Fig. 1 is circuit diagram of the present utility model.
Name in accompanying drawing corresponding to Reference numeral is called: C1, the first electric capacity, C2, the second electric capacity, P1, the first polarity-inverting amplifier, P2, the second polarity-inverting amplifier, D1, the first diode, D2, the second diode, D3, the 3rd diode, D4, the 4th diode, G, isolator, R, resistance, L1, short microstrip transmission line, L2, long microstrip transmission line.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but embodiment of the present utility model is not limited thereto.
Embodiment 1:
As shown in Figure 1,
The purpose of this utility model is achieved through the following technical solutions: for the switching line phase modulation circuit of radar, it is characterized in that: comprise 4 diodes, 4 diodes are respectively: the first diode D1, second diode D2, 3rd diode D3, 4th diode D4, the negative pole of the first diode D1 is connected with the positive pole of the 3rd diode D3, the negative pole of the 4th diode D4 is connected with the positive pole of the second diode D2, the negative pole of the second diode D2 is connected with the positive pole of the first diode D1 by short microstrip transmission line L1, the negative pole of the 3rd diode D3 is connected with the positive pole of the 4th diode D4 by long microstrip transmission line L2, line between first diode D1 and the 3rd diode D3 is also connected with the first electric capacity C1 accessing signal, line between 4th diode D4 and the first diode D1 is also connected with the output terminal of the second electric capacity C2, also comprise the first polarity-inverting amplifier P1 being connected with phase-modulated signal, first polarity-inverting amplifier P1 is in series with the second polarity-inverting amplifier P2, second polarity-inverting amplifier P2 is in series with resistance R, the input end of resistance R is connected with the second polarity-inverting amplifier P2, line between 4th diode D4 and the first diode D1 is connected with the output terminal of resistance R, line between first polarity-inverting amplifier P1 and the second polarity-inverting amplifier P2 draws the output terminal receiving the first electric capacity C1.
The design concept of foregoing circuit is: after adopting foregoing circuit design, because the microstrip transmission line adopting two length different is arranged in circuit, (or other any microwave transmission lines), the first diode, the second diode, the 3rd diode, the 4th diode are the PIN diode that 4 performances are consistent.When both sides diode complementary is biased, when the first diode, the second diode current flow, the 3rd diode, the 4th diode are in cut-off state, and CF signal is transmitted through short microstrip transmission line.Otherwise when the first diode, the second diode cut-off, the 3rd diode, the 4th diode are in conducting state, and CF signal is transmitted through long microstrip transmission line.Obviously, because long microstrip transmission line is different with short microstrip transmission line length, phase shift effect is thus caused.
Second electric capacity C2 is also in series with isolator G.
First diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4 are PIN diode.
The length of long microstrip transmission line L2 is greater than the length of short microstrip transmission line L1.
The microstrip transmission line adopting two length different is arranged in circuit, and (or other any microwave transmission lines), the first diode, the second diode, the 3rd diode, the 4th diode are the PIN diode that 4 performances are consistent.When both sides diode complementary is biased, when the first diode, the second diode current flow, the 3rd diode, the 4th diode are in cut-off state, and CF signal is transmitted through short microstrip transmission line.Otherwise when the first diode, the second diode cut-off, the 3rd diode, the 4th diode are in conducting state, and CF signal is transmitted through long microstrip transmission line.Obviously, because long microstrip transmission line is different with short microstrip transmission line length, phase shift effect is thus caused.Suppose that the length of long microstrip transmission line L2 is greater than the length of short microstrip transmission line L1.Then phase modulation phase place is: F=B(L2-L1)=2 π/Q* △ L, B is transmission line phase constant, and Q is waveguide wavelength, and △ L is the length that the length of long microstrip transmission line L2 deducts short microstrip transmission line L1.Therefore, realize 0/ π phase modulation, then, the length that the length of long microstrip transmission line L2 deducts short microstrip transmission line L1 is △ L, the half of the waveguide wavelength of input to be Q, △ L be Q.
As mentioned above, then well the utility model can be realized.
Claims (5)
1. for the switching line phase modulation circuit of radar, it is characterized in that: comprise 4 diodes, 4 diodes are respectively: the first diode (D1), second diode (D2), 3rd diode (D3), 4th diode (D4), the negative pole of the first diode (D1) is connected with the positive pole of the 3rd diode (D3), the negative pole of the 4th diode (D4) is connected with the positive pole of the second diode (D2), the negative pole of the second diode (D2) is connected with the positive pole of the first diode (D1) by short microstrip transmission line (L1), the negative pole of the 3rd diode (D3) is connected with the positive pole of the 4th diode (D4) by long microstrip transmission line (L2), line between first diode (D1) and the 3rd diode (D3) is also connected with the first electric capacity (C1) accessing signal, line between 4th diode (D4) and the first diode (D1) is also connected with the output terminal of the second electric capacity (C2), also comprise the first polarity-inverting amplifier (P1) being connected with phase-modulated signal, first polarity-inverting amplifier (P1) is in series with the second polarity-inverting amplifier (P2), second polarity-inverting amplifier (P2) is in series with resistance (R), the input end of resistance (R) is connected with the second polarity-inverting amplifier (P2), line between 4th diode (D4) and the first diode (D1) is connected with the output terminal of resistance (R), line between first polarity-inverting amplifier (P1) and the second polarity-inverting amplifier (P2) draws the output terminal receiving the first electric capacity (C1).
2. the switching line phase modulation circuit for radar according to claim 1, is characterized in that: the second electric capacity (C2) is also in series with isolator (G).
3. the switching line phase modulation circuit for radar according to claim 1, is characterized in that: the first diode (D1), the second diode (D2), the 3rd diode (D3), the 4th diode (D4) are PIN diode.
4. the switching line phase modulation circuit for radar according to claim 1, is characterized in that: the length of long microstrip transmission line (L2) is greater than the length of short microstrip transmission line (L1).
5. the switching line phase modulation circuit for radar according to claim 1, is characterized in that: the length that the length of long microstrip transmission line (L2) deducts short microstrip transmission line (L1) is △ L, the half of the waveguide wavelength of input to be Q, △ L be Q.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520470814.1U CN204731408U (en) | 2015-07-03 | 2015-07-03 | For the switching line phase modulation circuit of radar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520470814.1U CN204731408U (en) | 2015-07-03 | 2015-07-03 | For the switching line phase modulation circuit of radar |
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| CN204731408U true CN204731408U (en) | 2015-10-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520470814.1U Active CN204731408U (en) | 2015-07-03 | 2015-07-03 | For the switching line phase modulation circuit of radar |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104965196A (en) * | 2015-07-03 | 2015-10-07 | 四川莱源科技有限公司 | Switch line phase modulation circuit used for radar |
| CN113253210A (en) * | 2021-06-29 | 2021-08-13 | 成都雷通科技有限公司 | Full-digital frequency-shift phase-shift large instantaneous broadband phased array and method |
-
2015
- 2015-07-03 CN CN201520470814.1U patent/CN204731408U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104965196A (en) * | 2015-07-03 | 2015-10-07 | 四川莱源科技有限公司 | Switch line phase modulation circuit used for radar |
| CN104965196B (en) * | 2015-07-03 | 2018-06-15 | 四川莱源科技有限公司 | For the switching line phase modulation circuit of radar |
| CN113253210A (en) * | 2021-06-29 | 2021-08-13 | 成都雷通科技有限公司 | Full-digital frequency-shift phase-shift large instantaneous broadband phased array and method |
| CN113253210B (en) * | 2021-06-29 | 2021-10-01 | 成都雷通科技有限公司 | Full-digital frequency-shift phase-shift large instantaneous broadband phased array and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181115 Address after: 610000 Xinchuang Road, West District, Chengdu High-tech Zone, Sichuan Province Patentee after: Sichuan Di Information Technology Co., Ltd. Address before: 610000 Longtan Industrial Park, two section of Chenghua District East Three Ring Road, Chengdu, Sichuan. Patentee before: SICHUAN LAIYUAN TECHNOLOGY CO., LTD. |
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| TR01 | Transfer of patent right |