CN204719898U - A kind of double valve storage tank anti-theft warning circuit - Google Patents

A kind of double valve storage tank anti-theft warning circuit Download PDF

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Publication number
CN204719898U
CN204719898U CN201520231873.3U CN201520231873U CN204719898U CN 204719898 U CN204719898 U CN 204719898U CN 201520231873 U CN201520231873 U CN 201520231873U CN 204719898 U CN204719898 U CN 204719898U
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China
Prior art keywords
controlled
phase silicon
resistance
diode
direct supply
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Expired - Fee Related
Application number
CN201520231873.3U
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Chinese (zh)
Inventor
吴飞
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Yancheng Teachers University
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Yancheng Teachers University
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Priority to CN201520231873.3U priority Critical patent/CN204719898U/en
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Publication of CN204719898U publication Critical patent/CN204719898U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model relates to a kind of circuit, particularly a kind of double valve storage tank anti-theft warning circuit.It is characterized in that: the positive pole of direct supply is by the single-phase silicon-controlled anode of power switch respectively with the first, second single-phase silicon-controlled anode is connected, the positive pole of direct supply passes through power switch, first resistance is extremely connected with the first single-phase silicon-controlled control, the positive pole of direct supply passes through power switch, second resistance is extremely connected with the second single-phase silicon-controlled control, first short-circuit line and the one end after the first Capacitance parallel connection are extremely connected with the first single-phase silicon-controlled control, the other end is by the first light emitting diode, 3rd resistance is connected with the first single-phase silicon-controlled negative electrode, second short-circuit line and the one end after the second Capacitance parallel connection are extremely connected with the second single-phase silicon-controlled control.Owing to adopting technique scheme, the advantage that the utility model has and good effect are: economical and practical.

Description

A kind of double valve storage tank anti-theft warning circuit
Technical field
The utility model relates to a kind of circuit, particularly a kind of double valve storage tank anti-theft warning circuit.
Background technology
At present, chemical plant is a lot of for the storage tank depositing raw material and finished product, often there will be raw material and the stolen thing of finished product, because plant area's area is large, is difficult to all-weather prevention and control.
Summary of the invention
Technical problem to be solved in the utility model is: provide a kind of double valve storage tank anti-theft warning circuit, can work as when the arbitrary valve rotation axis of storage tank rotates and send chimes of doom in time.
The utility model solves the technical scheme that its technical matters adopts: the utility model is by power switch, direct supply, first short-circuit line, second short-circuit line, first resistance, second resistance, 3rd resistance, 4th resistance, 5th resistance, first electric capacity, second electric capacity, first is single-phase silicon-controlled, second is single-phase silicon-controlled, first light emitting diode, second light emitting diode, first diode, second diode, 3rd diode, LM169B language alarm chip, loudspeaker and triode composition, is characterized in that: the positive pole of direct supply is by the single-phase silicon-controlled anode of power switch respectively with the first, second single-phase silicon-controlled anode is connected, and the positive pole of direct supply passes through power switch, first resistance is extremely connected with the first single-phase silicon-controlled control, and the positive pole of direct supply passes through power switch, second resistance is extremely connected with the second single-phase silicon-controlled control, and the first short-circuit line and the one end after the first Capacitance parallel connection are extremely connected with the first single-phase silicon-controlled control, and the other end is by the first light emitting diode, 3rd resistance is connected with the first single-phase silicon-controlled negative electrode, and the second short-circuit line and the one end after the second Capacitance parallel connection are extremely connected with the second single-phase silicon-controlled control, and the other end is by the second light emitting diode, 4th resistance is connected with the second single-phase silicon-controlled negative electrode, and the first single-phase silicon-controlled negative electrode is by the first diode, 5th resistance is connected with 3 pin of LM169B language alarm chip, and the first single-phase silicon-controlled negative electrode is by the first diode, 3rd diode is connected with 5 pin of LM169B language alarm chip, and the first single-phase silicon-controlled negative electrode is by the first diode, loudspeaker are connected with the collector of triode, and the base stage of triode is connected with 4 pin of LM169B language alarm chip, the emitter of triode, 1 pin of LM169B language alarm chip is connected with the negative pole of direct supply, and the second single-phase silicon-controlled negative electrode is by the second diode, 3rd diode is connected with 5 pin of LM169B language alarm chip, and the first single-phase silicon-controlled control pole is connected with the negative pole of direct supply by the first short-circuit line, and the second single-phase silicon-controlled control pole is connected with DC power cathode by the second short-circuit line.
Owing to adopting technique scheme, the advantage that the utility model has and good effect are: economical and practical.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is further illustrated.
Figure of description is circuit theory diagrams of the present utility model.
K. power switch in figure, E. direct supply, A1. first short-circuit line, A2. the second short-circuit line, R1. the first resistance, R2. second resistance, R3. the 3rd resistance, R4. the 4th resistance, R5. the 5th resistance, C1. first electric capacity, C2. second electric capacity, VS1. first is single-phase silicon-controlled, VS2. second is single-phase silicon-controlled, LED1. first light emitting diode, LED2. second light emitting diode, VD1. the first diode, VD2. the second diode, VD3. the 3rd diode, IC.LM169B language alarm chip, BL. loudspeaker, VT. triode.
Embodiment
In Figure of description, the positive pole of direct supply (E) is by power switch (K) respectively with the first single-phase silicon-controlled (VS1) anode, the anode of second single-phase silicon-controlled (VS2) is connected, the positive pole of direct supply (E) is by power switch (K), the control of the first resistance (R1) single-phase silicon-controlled with first (VS1) is extremely connected, the positive pole of direct supply (E) is by power switch (K), the control of the second resistance (R2) single-phase silicon-controlled with second (VS2) is extremely connected, first short-circuit line (A1) is extremely connected with the control of the one end single-phase silicon-controlled with first (VS1) after the first electric capacity (C1) parallel connection, the other end is by the first light emitting diode (LED1), the negative electrode of the 3rd resistance (R3) single-phase silicon-controlled with first (VS1) is connected, second short-circuit line (A2) is extremely connected with the control of the one end single-phase silicon-controlled with second (VS2) after the second electric capacity (C2) parallel connection, the other end is by the second light emitting diode (LED2), the negative electrode of the 4th resistance (R4) single-phase silicon-controlled with second (VS2) is connected, the negative electrode of first single-phase silicon-controlled (VS1) is by the first diode (VD1), 5th resistance (R5) is connected with 3 pin of LM169B language alarm chip (IC), the negative electrode of first single-phase silicon-controlled (VS1) is by the first diode (VD1), 3rd diode (VD3) is connected with 5 pin of LM169B language alarm chip (IC), the negative electrode of first single-phase silicon-controlled (VS1) is by the first diode (VD1), loudspeaker (BL) are connected with the collector of triode (VT), the base stage of triode (VT) is connected with 4 pin of LM169B language alarm chip (IC), the emitter of triode (VT), 1 pin of LM169B language alarm chip (IC) is connected with the negative pole of direct supply (E), the negative electrode of second single-phase silicon-controlled (VS2) is by the second diode (VD2), 3rd diode (VD3) is connected with 5 pin of LM169B language alarm chip (IC), the control pole of first single-phase silicon-controlled (VS1) is connected with the negative pole of direct supply (E) by the first short-circuit line (A1), the control pole of second single-phase silicon-controlled (VS2) is connected with direct supply (E) negative pole by the second short-circuit line (A2).Between the valve body that first short-circuit line and the second short-circuit line are connected to two valves and rotation axis.
Principle of work of the present utility model is: when in the first short-circuit line (A1), the second short-circuit line (A2) any one disconnect time, corresponding single-phase silicon-controlled conducting, LM169B language alarm chip (IC) is triggered work, and loudspeaker (BL) send chimes of doom.

Claims (1)

1. a double valve storage tank anti-theft warning circuit, by power switch, direct supply, first short-circuit line, second short-circuit line, first resistance, second resistance, 3rd resistance, 4th resistance, 5th resistance, first electric capacity, second electric capacity, first is single-phase silicon-controlled, second is single-phase silicon-controlled, first light emitting diode, second light emitting diode, first diode, second diode, 3rd diode, LM169B language alarm chip, loudspeaker and triode composition, is characterized in that: the positive pole of direct supply (E) is by power switch (K) respectively with the first single-phase silicon-controlled (VS1) anode, the anode of second single-phase silicon-controlled (VS2) is connected, and the positive pole of direct supply (E) is by power switch (K), the control of the first resistance (R1) single-phase silicon-controlled with first (VS1) is extremely connected, and the positive pole of direct supply (E) is by power switch (K), the control of the second resistance (R2) single-phase silicon-controlled with second (VS2) is extremely connected, first short-circuit line (A1) is extremely connected with the control of the one end single-phase silicon-controlled with first (VS1) after the first electric capacity (C1) parallel connection, and the other end is by the first light emitting diode (LED1), the negative electrode of the 3rd resistance (R3) single-phase silicon-controlled with first (VS1) is connected, second short-circuit line (A2) is extremely connected with the control of the one end single-phase silicon-controlled with second (VS2) after the second electric capacity (C2) parallel connection, and the other end is by the second light emitting diode (LED2), the negative electrode of the 4th resistance (R4) single-phase silicon-controlled with second (VS2) is connected, and the negative electrode of first single-phase silicon-controlled (VS1) is by the first diode (VD1), 5th resistance (R5) is connected with 3 pin of LM169B language alarm chip (IC), and the negative electrode of first single-phase silicon-controlled (VS1) is by the first diode (VD1), 3rd diode (VD3) is connected with 5 pin of LM169B language alarm chip (IC), and the negative electrode of first single-phase silicon-controlled (VS1) is by the first diode (VD1), loudspeaker (BL) are connected with the collector of triode (VT), and the base stage of triode (VT) is connected with 4 pin of LM169B language alarm chip (IC), the emitter of triode (VT), 1 pin of LM169B language alarm chip (IC) is connected with the negative pole of direct supply (E), and the negative electrode of second single-phase silicon-controlled (VS2) is by the second diode (VD2), 3rd diode (VD3) is connected with 5 pin of LM169B language alarm chip (IC), the control pole of first single-phase silicon-controlled (VS1) is connected with the negative pole of direct supply (E) by the first short-circuit line (A1), and the control pole of second single-phase silicon-controlled (VS2) is connected with direct supply (E) negative pole by the second short-circuit line (A2).
CN201520231873.3U 2015-04-10 2015-04-10 A kind of double valve storage tank anti-theft warning circuit Expired - Fee Related CN204719898U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520231873.3U CN204719898U (en) 2015-04-10 2015-04-10 A kind of double valve storage tank anti-theft warning circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520231873.3U CN204719898U (en) 2015-04-10 2015-04-10 A kind of double valve storage tank anti-theft warning circuit

Publications (1)

Publication Number Publication Date
CN204719898U true CN204719898U (en) 2015-10-21

Family

ID=54318874

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520231873.3U Expired - Fee Related CN204719898U (en) 2015-04-10 2015-04-10 A kind of double valve storage tank anti-theft warning circuit

Country Status (1)

Country Link
CN (1) CN204719898U (en)

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151021

Termination date: 20160410

CF01 Termination of patent right due to non-payment of annual fee