CN204695139U - A kind of intelligent temperature control mattress - Google Patents
A kind of intelligent temperature control mattress Download PDFInfo
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- CN204695139U CN204695139U CN201520459964.2U CN201520459964U CN204695139U CN 204695139 U CN204695139 U CN 204695139U CN 201520459964 U CN201520459964 U CN 201520459964U CN 204695139 U CN204695139 U CN 204695139U
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Abstract
The utility model discloses a kind of intelligent temperature control mattress, comprise resistance R1, triode V1, chip IC 1 and relay J 1, one end of described resistance R1 connects the contact J2-1 of relay J 1, relay J 2, power supply VCC, the negative electrode of diode D1, the negative electrode of diode D2, the contact J1-1 of relay J 1 and relay J 2, other end contact resistance R2, the resistance R12 of resistance R1 and a stiff end of potentiometer P1, the other end of resistance R12 connects a stiff end of potentiometer P2.The utility model mattress internal circuit configuration is simple, components and parts are few, utilize thermistor as temperature-sensing element, and the function possessing refrigeration simultaneously and heat, person easy to use uses when the summer in winter, temperature was unfavorable, therefore circuit have that cost of manufacture is low, easy to use, diverse in function and control advantage accurately.
Description
Technical field
The utility model relates to a kind of mattress, specifically a kind of intelligent temperature control mattress.
Background technology
Mattress is bedding common in daily life, mattress is in the market various, but major part only has simple softness or massage functions, especially in winter and summer, the guarantee of temperature cannot be provided to people, market occurs a small amount of mattress with refrigeration and heat-production functions problems such as also ubiquity complex structure, price be high, and function is comparatively single, therefore popularity rate is very low.
Utility model content
The purpose of this utility model is to provide a kind of intelligent temperature control mattress of highly sensitive, stable performance, to solve the problem proposed in above-mentioned background technology.
For achieving the above object, the utility model provides following technical scheme:
A kind of intelligent temperature control mattress, comprises resistance R1, triode V1, chip IC 1 and relay J 1, one end of described resistance R1 connects relay J 1, relay J 2, power supply VCC, the negative electrode of diode D1, the negative electrode of diode D2, the other end contact resistance R2 of the contact J1-1 of relay J 1 and the contact J2-1 of relay J 2, resistance R1, a stiff end of resistance R12 and potentiometer P1, the other end of resistance R12 connects a stiff end of potentiometer P2, and another stiff end of potentiometer P2 connects another stiff end of potentiometer P1, the other end contact resistance R3 of resistance R2, electric capacity C1, the pin 1 of chip IC 1 and the pin 1 of chip IC 3, the sliding end of potentiometer P1 connects the pin 3 of chip IC 1, and the sliding end of potentiometer P2 connects the pin 3 of chip IC 3, and the pin 4 of chip IC 1 connects the anode of diode D3, the negative electrode contact resistance R5 of diode D3, resistance R6, the pin 3 of electric capacity C2 and chip IC 2, the pin 4 of chip IC 3 connects the anode of diode D4, the negative electrode contact resistance R8 of diode D4, resistance R10, the pin 3 of electric capacity C3 and chip IC 4, the pin 4 contact resistance R4 of chip IC 2, the other end of resistance R5 and the base stage of triode V1, the collector of triode V1 connects the anode of diode D1 and the other end of relay J 2, the pin 4 contact resistance R11 of chip IC 4, the other end of resistance R10 and the base stage of triode V2, the collector of triode V2 connects the anode of diode D2 and the other end of relay J 1, and the other end of resistance R3 connects the other end of electric capacity C1, the other end of electric capacity C2, the other end of electric capacity C3, the other end of resistance R6, the other end of resistance R7, the other end of resistance R8, the other end of resistance R9, the emitter of triode V1, the emitter of triode V2, heating wire H and semiconductor refrigerating block G ground connection, the other end of heating wire H connects the other end of the contact J2-1 of relay J 2, and the other end of semiconductor refrigerating block G connects the other end of the contact J1-1 of relay J 1.
As preferred version of the present utility model: the model of described chip IC 1, chip IC 2, chip IC 3 and chip IC 4 is LM321.
As preferred version of the present utility model: described relay J 1 and relay J 2 are normally opened contact relay.
As preferred version of the present utility model: described resistance R3 is thermistor.
Compared with prior art, the beneficial effects of the utility model are: the utility model mattress internal circuit configuration is simple, components and parts are few, utilize thermistor as temperature-sensing element, and the function possessing refrigeration simultaneously and heat, person easy to use uses when the summer in winter, temperature was unfavorable, therefore circuit have that cost of manufacture is low, easy to use, diverse in function and control advantage accurately.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of intelligent temperature control mattress.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Refer to Fig. 1, a kind of intelligent temperature control mattress, comprises resistance R1, triode V1, chip IC 1 and relay J 1, one end of described resistance R1 connects relay J 1, relay J 2, power supply VCC, the negative electrode of diode D1, the negative electrode of diode D2, the other end contact resistance R2 of the contact J1-1 of relay J 1 and the contact J2-1 of relay J 2, resistance R1, a stiff end of resistance R12 and potentiometer P1, the other end of resistance R12 connects a stiff end of potentiometer P2, and another stiff end of potentiometer P2 connects another stiff end of potentiometer P1, the other end contact resistance R3 of resistance R2, electric capacity C1, the pin 1 of chip IC 1 and the pin 1 of chip IC 3, the sliding end of potentiometer P1 connects the pin 3 of chip IC 1, and the sliding end of potentiometer P2 connects the pin 3 of chip IC 3, and the pin 4 of chip IC 1 connects the anode of diode D3, the negative electrode contact resistance R5 of diode D3, resistance R6, the pin 3 of electric capacity C2 and chip IC 2, the pin 4 of chip IC 3 connects the anode of diode D4, the negative electrode contact resistance R8 of diode D4, resistance R10, the pin 3 of electric capacity C3 and chip IC 4, the pin 4 contact resistance R4 of chip IC 2, the other end of resistance R5 and the base stage of triode V1, the collector of triode V1 connects the anode of diode D1 and the other end of relay J 2, the pin 4 contact resistance R11 of chip IC 4, the other end of resistance R10 and the base stage of triode V2, the collector of triode V2 connects the anode of diode D2 and the other end of relay J 1, and the other end of resistance R3 connects the other end of electric capacity C1, the other end of electric capacity C2, the other end of electric capacity C3, the other end of resistance R6, the other end of resistance R7, the other end of resistance R8, the other end of resistance R9, the emitter of triode V1, the emitter of triode V2, heating wire H and semiconductor refrigerating block G ground connection, the other end of heating wire H connects the other end of the contact J2-1 of relay J 2, and the other end of semiconductor refrigerating block G connects the other end of the contact J1-1 of relay J 1.
The model of chip IC 1, chip IC 2, chip IC 3 and chip IC 4 is LM321.Relay J 1 and relay J 2 are normally opened contact relay.Resistance R3 is thermistor.
Principle of work of the present utility model is: circuit is by temperature sensing circuit, amplifying circuit and control circuit composition, wherein temperature sensing circuit comprises resistance R2, thermistor R3 and electric capacity C1, amplifying circuit comprises chip IC 1-IC4, potentiometer P1, P2, control circuit comprises triode V1, triode V2, relay J 1 and relay J 2, potentiometer P1 and potentiometer P2 can arrange higher limit and the lower limit of mattress temperature easily, when mattress temperature is between the temperature upper limit of setting and lower limit, chip IC 1-IC4 does not all work, relay is in off-position, when mattress temperature is higher than the temperature upper limit set, the resistance of thermistor R3 raises with temperature and reduces, 1 pin voltage of chip IC 3 raises, chip IC 3 exports high level, the base stage of triode V2 is added in after chip IC 4 is amplified, triode V2 conducting, relay J 1 is energized, its normally opened contact J1-1 adhesive, semiconductor refrigerating block G is energized work, reduce mattress temperature, when mattress temperature is higher than the temperature upper limit set, the resistance of thermistor R3 raises with temperature and reduces, 1 pin voltage of chip IC 1 raises, chip IC 1 exports high level, the base stage of triode V1 is added in after chip IC 2 is amplified, triode V1 conducting, relay J 2 is energized, its normally opened contact J2-1 adhesive, heating wire H is energized work, raise mattress temperature, reach the object of intelligent temperature control.
Claims (4)
1. an intelligent temperature control mattress, comprises resistance R1, triode V1, chip IC 1 and relay J 1, it is characterized in that, one end of described resistance R1 connects relay J 1, relay J 2, power supply VCC, the negative electrode of diode D1, the negative electrode of diode D2, the other end contact resistance R2 of the contact J1-1 of relay J 1 and the contact J2-1 of relay J 2, resistance R1, a stiff end of resistance R12 and potentiometer P1, the other end of resistance R12 connects a stiff end of potentiometer P2, and another stiff end of potentiometer P2 connects another stiff end of potentiometer P1, the other end contact resistance R3 of resistance R2, electric capacity C1, the pin 1 of chip IC 1 and the pin 1 of chip IC 3, the sliding end of potentiometer P1 connects the pin 3 of chip IC 1, and the sliding end of potentiometer P2 connects the pin 3 of chip IC 3, and the pin 4 of chip IC 1 connects the anode of diode D3, the negative electrode contact resistance R5 of diode D3, resistance R6, the pin 3 of electric capacity C2 and chip IC 2, the pin 4 of chip IC 3 connects the anode of diode D4, the negative electrode contact resistance R8 of diode D4, resistance R10, the pin 3 of electric capacity C3 and chip IC 4, the pin 4 contact resistance R4 of chip IC 2, the other end of resistance R5 and the base stage of triode V1, the collector of triode V1 connects the anode of diode D1 and the other end of relay J 2, the pin 4 contact resistance R11 of chip IC 4, the other end of resistance R10 and the base stage of triode V2, the collector of triode V2 connects the anode of diode D2 and the other end of relay J 1, and the other end of resistance R3 connects the other end of electric capacity C1, the other end of electric capacity C2, the other end of electric capacity C3, the other end of resistance R6, the other end of resistance R7, the other end of resistance R8, the other end of resistance R9, the emitter of triode V1, the emitter of triode V2, heating wire H and semiconductor refrigerating block G ground connection, the other end of heating wire H connects the other end of the contact J2-1 of relay J 2, and the other end of semiconductor refrigerating block G connects the other end of the contact J1-1 of relay J 1.
2. a kind of intelligent temperature control mattress according to claim 1, is characterized in that, the model of described chip IC 1, chip IC 2, chip IC 3 and chip IC 4 is LM321.
3. a kind of intelligent temperature control mattress according to claim 1, is characterized in that, described relay J 1 and relay J 2 are normally opened contact relay.
4. a kind of intelligent temperature control mattress according to claim 1, is characterized in that, described resistance R3 is thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520459964.2U CN204695139U (en) | 2015-06-23 | 2015-06-23 | A kind of intelligent temperature control mattress |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520459964.2U CN204695139U (en) | 2015-06-23 | 2015-06-23 | A kind of intelligent temperature control mattress |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204695139U true CN204695139U (en) | 2015-10-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520459964.2U Expired - Fee Related CN204695139U (en) | 2015-06-23 | 2015-06-23 | A kind of intelligent temperature control mattress |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204695139U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107783565A (en) * | 2017-11-23 | 2018-03-09 | 深圳佳莱知家科技有限公司 | A kind of Intelligent temperature-control mattress |
-
2015
- 2015-06-23 CN CN201520459964.2U patent/CN204695139U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107783565A (en) * | 2017-11-23 | 2018-03-09 | 深圳佳莱知家科技有限公司 | A kind of Intelligent temperature-control mattress |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yin Hui Inventor before: Wu Huaan |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170522 Address after: 528318, No. third, No. 8, No. 1, West Industrial Zone, Bao Yong village committee, Longjiang Town, Shunde District, Guangdong, Foshan Patentee after: Foshan City Project Leader Hardware Co. Ltd. Address before: 315700, Zhejiang City, Ningbo province Xiangshan Dan City Tower Hill Road Patentee before: Wu Huaan |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151007 Termination date: 20180623 |