CN204694878U - Double-sided light guide plate and apply its double-sided display LED component - Google Patents
Double-sided light guide plate and apply its double-sided display LED component Download PDFInfo
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- CN204694878U CN204694878U CN201520459548.2U CN201520459548U CN204694878U CN 204694878 U CN204694878 U CN 204694878U CN 201520459548 U CN201520459548 U CN 201520459548U CN 204694878 U CN204694878 U CN 204694878U
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Abstract
The utility model discloses a kind of double-sided light guide plate and apply its double-sided display LED component, described light guide plate comprises sheet metal, described sheet metal comprises each other relative first surface and second surface, described first surface is formed with a LGP structure, second surface is formed with the 2nd LGP structure.By forming two-sided LGP structure on sheet metal in the utility model, can reflect the emitting LED chip on sheet metal two sides, improve the luminescence efficiency of dual surface LED device.
Description
Technical field
The utility model relates to light guide plate technical field, particularly relates to a kind of double-sided light guide plate and applies its double-sided display LED component.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is a kind of semiconductor electronic component that can be luminous.This electronic component occurred as far back as 1962, and can only send the ruddiness of low luminosity in early days, develop other monochromatic versions afterwards, the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.And purposes is also by the beginning as pilot lamp, display board etc.; Along with the continuous progress of technology, light emitting diode has been widely used in display, televisor daylighting decoration and illumination.
LED is a kind of solid-state semiconductor device electric energy being converted into luminous energy, relative to conventional light source, LED has the advantages that volume is little, long service life, fast response time, luminescence efficiency are high, and therefore LED becomes a kind of novel green light source got most of the attention and enters lighting field.Along with LED is in illumination and the raising year by year of backlight market range of application, the application demand of middle high-power component obviously increases, but in prior art, LED chip is generally the bright dipping of single side, and bright dipping region has certain restriction.
Therefore, for above-mentioned technical matters, be necessary the double-sided display LED component a kind of double-sided light guide plate being provided and applying it.
Utility model content
In view of this, the purpose of this utility model is the double-sided display LED component that provides a kind of double-sided light guide plate and apply it.
To achieve these goals, the technical scheme that provides of the utility model embodiment is as follows:
A kind of double-sided light guide plate, described light guide plate comprises sheet metal, and described sheet metal comprises each other relative first surface and second surface, described first surface is formed with a LGP structure, second surface is formed with the 2nd LGP structure.
As further improvement of the utility model, described first surface is formed with a LGP site of some depressions, second surface is formed with the 2nd LGP site of some depressions.
As further improvement of the utility model, a described LGP structure and the 2nd LGP structure are by integrated mould injection mo(u)lding on the first surface and second surface of sheet metal.
As further improvement of the utility model, a described LGP site and the 2nd LGP site are the site to sheet metal sunken inside and in ellipsoid.
Correspondingly, a kind of double-sided display LED component, described LED component comprises double-side LED chip and double-sided light guide plate, described double-sided light guide plate is positioned at the side of LED component, described double-side LED chip comprises substrate and is positioned at the epitaxial structure on substrate, described epitaxial structure comprises the n type semiconductor layer be positioned on substrate, to be positioned on n type semiconductor layer and to be separated from each other the first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer of setting, and the first p type semiconductor layer laid respectively on the first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer and the second p type semiconductor layer, described n type semiconductor layer is provided with N electrode, described first p type semiconductor layer and the second p type semiconductor layer are respectively arranged with the first P electrode and the second P electrode, a LGP structure on described double-sided light guide plate and the 2nd LGP structure are corresponding with the first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer respectively.
As further improvement of the utility model, below n type semiconductor layer, be provided with cushion.
As further improvement of the utility model, be respectively equipped with the first N-type doped layer and the second N-type doped layer below described first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer, above described first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer, be respectively equipped with a P type doped layer and the 2nd P type doped layer.
The beneficial effects of the utility model are:
By forming two-sided LGP structure on sheet metal in the utility model, can reflect the emitting LED chip on sheet metal two sides, improve the luminescence efficiency of dual surface LED device.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the cross-sectional view of double-sided light guide plate in the utility model first embodiment.
Fig. 2 is the cross-sectional view of double-sided display LED component in the utility model second embodiment.
Embodiment
Technical scheme in the utility model is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the utility model embodiment, technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all should belong to the scope of the utility model protection.
When element or layer be called as another parts or layer " on ", " be connected " with another parts or layer time, its can directly on these another parts or layer, be connected to this another parts or layer, or intermediary element or layer can be there is.On the contrary, when parts are called as " directly on another parts or layer ", " being connected directly between on another parts or layer ", intermediate member or layer can not be there is.
Further, although should be understood that first, second grade of term can be used to describe various element or structure in this article, these are described the restriction that object should not be subject to these terms.These terms are only for being distinguished from each other out these description objects.Such as, first surface can be called as second surface, and second surface also can be called as first surface similarly; First p type semiconductor layer can be called as the second p type semiconductor layer, and the second p type semiconductor layer also can be called as the first p type semiconductor layer similarly, and this does not deviate from the protection domain of the application.
Shown in ginseng Fig. 1, in first embodiment of the present utility model, double-sided light guide plate comprises sheet metal 100, sheet metal is prepared from by the metal material with better reflecting effect material, sheet metal 100 comprises each other relative first surface 101 and second surface 102, by radium-shine or draw a LGP site and the 2nd LGP site (the non-label) that a technology is formed with some depressions on first surface 101 and second surface 102.One LGP structure 1011 and the 2nd LGP structure 1021 are by integrated mould injection mo(u)lding on the first surface 101 and second surface 102 of sheet metal.
Preferably, in present embodiment, LGP site is the site to sheet metal sunken inside and in ellipsoid, and in other embodiments, site also can be set to other shapes.
Shown in composition graphs 2, in the utility model second embodiment, double-sided display LED component comprises double-side LED chip and double-sided light guide plate, and double-sided light guide plate is positioned at the side of LED component.Wherein, double-side LED chip comprises from bottom to top successively:
Substrate 10, in present embodiment, substrate is Sapphire Substrate, can be also other backing materials in other embodiments, as Si, SiC etc.;
Be positioned at the cushion 20 on substrate 10, in present embodiment, cushion is GaN cushion;
Be positioned at the n type semiconductor layer 30 on cushion 20, wherein, n type semiconductor layer is n-GaN layer;
Being positioned on n type semiconductor layer 30 and being separated from each other the first N-type doped layer 41 and the second N-type doped layer 42 of setting, preferably, the material of the first N-type doped layer and the second N-type doped layer is n-Al
0.15ga
0.85n;
Lay respectively at the first multiple quantum well light emitting layer 51 and the second multiple quantum well light emitting layer 52 on the first N-type doped layer 41 and the second N-type doped layer 42, in present embodiment, the first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer material are In
0.06ga
0.94n;
Lay respectively at P type doped layer 61 and the 2nd P type doped layer 62 on the first multiple quantum well light emitting layer 51 and the second multiple quantum well light emitting layer 52, preferably, the material of a P type doped layer and the 2nd P type doped layer is p-Al
0.15ga
0.85n;
Lay respectively at the first p type semiconductor layer 71 and the second p type semiconductor layer 72 on a P type doped layer 61 and the 2nd P type doped layer 62, wherein, the first p type semiconductor layer 71 and the second p type semiconductor layer 72 are p-GaN layer;
N electrode 80, is positioned on n type semiconductor layer;
First P electrode 91 and the second P electrode 92, lays respectively on the first p type semiconductor layer and the second p type semiconductor layer.
In present embodiment, double-sided light guide plate is at the first N-type doped layer 41 and the second N-type doped layer 42, first multiple quantum well light emitting layer 51 and the second multiple quantum well light emitting layer 52, a P type doped layer 61 and between the 2nd P type doped layer 62, first p type semiconductor layer 71 and the second p type semiconductor layer 72.
Above-mentioned embodiment is only a preferred implementation of the present utility model, and the material of each layer can adopt other alternative materials in other embodiments, will not enumerate herein.
A LGP structure on double-sided light guide plate and the 2nd LGP structure are corresponding with the first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer respectively.Double-side LED chip is positioned over a LGP both sides (i.e. corresponding LGP structure of LED, the corresponding 2nd LGP structure of another LED), double-side LED chip realizes the different light-emitting zone in both sides by two-sided LGP, and the light that on a LED and the 2nd LED, multiple quantum well light emitting layer sends reflects respectively by the first surface on double-sided light guide plate and second surface, the lattice point structure of depression is namely for launching the light that LED chip sends, this two light-emitting zone comparatively before double-side can not interfere with each other, and improves double-side efficiency.
As can be seen from the above technical solutions, by forming two-sided LGP structure on sheet metal in the utility model, can reflect the emitting LED chip on sheet metal two sides, improve the luminescence efficiency of dual surface LED device.
To those skilled in the art, obvious the utility model is not limited to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present utility model or essential characteristic, can realize the utility model in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present utility model is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the utility model.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this instructions is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of instructions is only for clarity sake, those skilled in the art should by instructions integrally, and the technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.
Claims (7)
1. a double-sided light guide plate, is characterized in that, described light guide plate comprises sheet metal, and described sheet metal comprises each other relative first surface and second surface, described first surface is formed with a LGP structure, second surface is formed with the 2nd LGP structure.
2. double-sided light guide plate according to claim 1, is characterized in that, described first surface is formed with a LGP site of some depressions, second surface is formed with the 2nd LGP site of some depressions.
3. double-sided light guide plate according to claim 2, is characterized in that, a described LGP structure and the 2nd LGP structure are by integrated mould injection mo(u)lding on the first surface and second surface of sheet metal.
4. double-sided light guide plate according to claim 2, is characterized in that, a described LGP site and the 2nd LGP site are the site to sheet metal sunken inside and in ellipsoid.
5. a double-sided display LED component, it is characterized in that, described LED component comprises the double-sided light guide plate according to any one of double-side LED chip and Claims 1 to 4, described double-sided light guide plate is positioned at the side of LED component, described double-side LED chip comprises substrate and is positioned at the epitaxial structure on substrate, described epitaxial structure comprises the n type semiconductor layer be positioned on substrate, to be positioned on n type semiconductor layer and to be separated from each other the first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer of setting, and the first p type semiconductor layer laid respectively on the first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer and the second p type semiconductor layer, described n type semiconductor layer is provided with N electrode, described first p type semiconductor layer and the second p type semiconductor layer are respectively arranged with the first P electrode and the second P electrode, a LGP structure on described double-sided light guide plate and the 2nd LGP structure are corresponding with the first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer respectively.
6. double-sided display LED component according to claim 5, is characterized in that, be provided with cushion below n type semiconductor layer.
7. double-sided display LED component according to claim 5, it is characterized in that, be respectively equipped with the first N-type doped layer and the second N-type doped layer below described first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer, above described first multiple quantum well light emitting layer and the second multiple quantum well light emitting layer, be respectively equipped with a P type doped layer and the 2nd P type doped layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659330A (en) * | 2018-12-14 | 2019-04-19 | 鸿利智汇集团股份有限公司 | A kind of LED component and its manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659330A (en) * | 2018-12-14 | 2019-04-19 | 鸿利智汇集团股份有限公司 | A kind of LED component and its manufacturing method |
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