CN204674127U - 一种防潮隔离膜 - Google Patents

一种防潮隔离膜 Download PDF

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CN204674127U
CN204674127U CN201520317239.1U CN201520317239U CN204674127U CN 204674127 U CN204674127 U CN 204674127U CN 201520317239 U CN201520317239 U CN 201520317239U CN 204674127 U CN204674127 U CN 204674127U
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titanium oxide
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袁剑春
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Zhejiang Fanteke New Material Co ltd
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STARS TECHNOLOGY SUZHOU Co Ltd
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Abstract

本实用新型公开了一种防潮隔离膜,包括MLCC基底层,上述MLCC基底层上表面涂覆有聚酰亚胺层,上述聚酰亚胺层上表面涂覆有抗静电层,上述抗静电层上表面涂覆有氧化钛层,上述氧化钛层上表面涂覆有二氧化硅层。本实用新型的有益效果为:防潮性能优越。

Description

一种防潮隔离膜
技术领域
本实用新型属于隔离膜技术领域,具体涉及一种防潮隔离膜。
背景技术
随着离型膜在电子电工领域应用的快速增长,离型膜因其尺寸稳定、易模切、少污染等优点而倍受亲关注并广泛应用,特别是在平板显示器件的加工制造中,大量使用离型膜,并由此对离型膜的剥离力、附着性、残余粘着率和抗静电性和防潮等提出了更高的要求。现有的隔离膜普遍存在防潮性能差的情况,在某些需要防潮的场合使用达不到防潮的效果。
实用新型内容
本实用新型的目的在于提供一种防潮效果好的防潮隔离膜。
为实现上述目的,本实用新型提供的技术方案为:
一种防潮隔离膜,包括MLCC基底层,上述MLCC基底层上表面涂覆有聚酰亚胺层,上述聚酰亚胺层上表面涂覆有抗静电层,上述抗静电层上表面涂覆有氧化钛层,上述氧化钛层上表面涂覆有二氧化硅层。
优选地,上述MLCC基底层厚度为30μm-100μm,上述聚酰亚胺层厚度为20μm-60μm,上述抗静电层厚度为30μm-60μm,上述氧化钛层厚度为5μm-10μm、上述二氧化硅层厚度为8μm-12μm。
优选地,上述MLCC基底层厚度为60μm,上述聚酰亚胺层厚度为30μm,上述抗静电层厚度为45μm,上述氧化钛层厚度为5μm、上述二氧化硅层厚度为10μm。
与现有技术相比,本实用新型采用了氧化钛层上,并且在其表面涂覆了二氧化硅层,起到了防潮的效果。
本实用新型的有益效果为:防潮性能优越。
附图说明
图1是本实用新型的示意图。
具体实施方式
下面结合附图和实施例,对本实用新型的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本实用新型的技术方案,而不能以此来限制本实用新型的保护范围。
本实用新型具体实施的技术方案是:
一种防潮隔离膜,包括MLCC基底层1,上述MLCC基底层1上表面涂覆有聚酰亚胺层2,上述聚酰亚胺层2上表面涂覆有抗静电层3,上述抗静电层3上表面涂覆有氧化钛层4,上述氧化钛层4上表面涂覆有二氧化硅层5。
上述MLCC基底层1厚度为30μm-100μm,上述聚酰亚胺层2厚度为20μm-60μm,上述抗静电层3厚度为30μm-60μm,上述氧化钛层4厚度为5μm-10μm、上述二氧化硅层5厚度为8μm-12μm。
作为本实用新型的一个具体的实施方案,上述MLCC基底层1厚度为60μm,上述聚酰亚胺层2厚度为30μm,上述抗静电层3厚度为45μm,上述氧化钛层4厚度为5μm、上述二氧化硅层5厚度为10μm。
以上所述仅是本实用新型的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本实用新型技术原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本实用新型的保护范围。

Claims (3)

1.一种防潮隔离膜,包括MLCC基底层,其特征在于,上述MLCC基底层上表面涂覆有聚酰亚胺层,上述聚酰亚胺层上表面涂覆有抗静电层,上述抗静电层上表面涂覆有氧化钛层,上述氧化钛层上表面涂覆有二氧化硅层。
2.根据权利要求1所述的防潮隔离膜,其特征在于,上述MLCC基底层厚度为30μm-100μm,上述聚酰亚胺层厚度为20μm-60μm,上述抗静电层厚度为30μm-60μm,上述氧化钛层厚度为5μm-10μm、上述二氧化硅层厚度为8μm-12μm。
3.根据权利要求2所述的防潮隔离膜,其特征在于,上述MLCC基底层厚度为60μm,上述聚酰亚胺层厚度为30μm,上述抗静电层厚度为45μm,上述氧化钛层厚度为5μm、上述二氧化硅层厚度为10μm。
CN201520317239.1U 2015-05-18 2015-05-18 一种防潮隔离膜 Active CN204674127U (zh)

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Effective date of registration: 20231117

Address after: 313000 east of Chenwang Road and west of Xiangfu Road in Changxing Economic Development Zone, Huzhou City, Zhejiang Province

Patentee after: Zhejiang fanteke New Material Co.,Ltd.

Address before: No. 18 Shangzhuang Road, Hengjing Street, Wuzhong District, Suzhou City, Jiangsu Province, 215103

Patentee before: STARS TECHNOLOGY SUZHOU Co.,Ltd.

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