CN204632795U - A kind of LED chip structure of high light-emitting rate - Google Patents
A kind of LED chip structure of high light-emitting rate Download PDFInfo
- Publication number
- CN204632795U CN204632795U CN201520187888.4U CN201520187888U CN204632795U CN 204632795 U CN204632795 U CN 204632795U CN 201520187888 U CN201520187888 U CN 201520187888U CN 204632795 U CN204632795 U CN 204632795U
- Authority
- CN
- China
- Prior art keywords
- electrode
- led chip
- luminous body
- high light
- chip structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000001883 metal evaporation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
The utility model discloses a kind of LED chip structure of high light-emitting rate, specifically improve LED chip current spread, improve final light emission rate; The technical scheme adopted is: a kind of LED chip structure of high light-emitting rate, comprises luminous body, and the upper end of described luminous body is provided with N electrode, and the lower end of described luminous body is provided with P electrode, is provided with P type metal between described luminous body and N electrode; The utility model is widely used in LED chip technical field.
Description
Technical field
The LED chip structure of a kind of high light-emitting rate of the utility model, belongs to LED chip technical field.
Background technology
Current LED technology has obtained very large achievement, but LED electrical light conversion efficiency is not also very high.Have already been proposed the multiple method that can improve light extraction efficiency, such as inverted structure, chip form geometrization structure, graph substrate, photonic crystal, surface coarsening, the back of the body plating speculum, current expansion optimization etc.But, how to break through prior art and improve the major issue that light extraction efficiency remains current needs solution further.
Utility model content
The utility model overcomes the deficiency that prior art exists, and technical problem to be solved, for providing a kind of LED chip structure of high light-emitting rate, specifically improves LED chip current spread, improves final light emission rate.
In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of LED chip structure of high light-emitting rate, comprise luminous body, the upper end of described luminous body is provided with N electrode, the lower end of described luminous body is provided with P electrode, is provided with P type metal between described luminous body and N electrode.
The metal evaporation of described P type is on the lower surface of N electrode.
P electrode described in two is symmetricly set on the two ends, bottom of luminous body.
Described N electrode is convex, and described P type metal is positioned at immediately below N electrode convex, and the width of described P type metal is less than the lower width of N electrode convex.
The beneficial effect that the utility model compared with prior art has is: the utility model solves the low technical problem of uneven the caused light emission rate of LED chip internal current diffusion, in the upper end of luminous body, N electrode is set, in the lower end of luminous body, P electrode is set, P type metal is arranged between luminous body and N electrode, by improving LED chip current spread, improve final light emission rate.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the utility model is described in more detail.
Fig. 1 is structural representation of the present utility model.
In figure: 1 be luminous body, 2 be N electrode, 3 be P electrode, 4 for P type metal.
Embodiment
As shown in Figure 1, the LED chip structure of a kind of high light-emitting rate of the utility model, comprises luminous body 1, and the upper end of described luminous body 1 is provided with N electrode 2, the lower end of described luminous body 1 is provided with P electrode 3, is provided with P type metal 4 between described luminous body 1 and N electrode 2.
Described P type metal 4 evaporation is on the lower surface of N electrode 2.
P electrode 3 described in two is symmetricly set on the two ends, bottom of luminous body 1.
Described N electrode 2 is in convex, and described P type metal 4 is positioned at immediately below N electrode 2 convex, and the width of described P type metal 4 is less than the lower width of N electrode 2 convex.
The utility model carries out micro-shadow operation in epi-layer surface, figure and N-pad shape similar, by cold plating mode by the metal evaporation of P type in chip N face, carry out etching operation, by P type metal patternization; Then at P type metal surface evaporation N-pad.
By the way, finally realize evaporation one deck P type metal below the N-Pad of red light chips, form Schottky and electric current is spread to surrounding.
Operation principle of the present utility model: after being powered up, due to the existence of P type metal, electric current can not concentrate on region immediately below PAD, and to surrounding them diffusion, to greatest extent by chip light emitting district, thus adds the light emission rate of chip.
By reference to the accompanying drawings embodiment of the present utility model is explained in detail above, but the utility model is not limited to above-described embodiment, in the ken that those of ordinary skill in the art possess, various change can also be made under the prerequisite not departing from the utility model aim.
Claims (4)
1. the LED chip structure of a high light-emitting rate, it is characterized in that: comprise luminous body (1), the upper end of described luminous body (1) is provided with N electrode (2), the lower end of described luminous body (1) is provided with P electrode (3), is provided with P type metal (4) between described luminous body (1) and N electrode (2).
2. the LED chip structure of a kind of high light-emitting rate according to claim 1, is characterized in that: described P type metal (4) evaporation is on the lower surface of N electrode (2).
3. the LED chip structure of a kind of high light-emitting rate according to claim 1, is characterized in that: the P electrode (3) described in two is symmetricly set on the two ends, bottom of luminous body (1).
4. the LED chip structure of a kind of high light-emitting rate according to claim 1, it is characterized in that: described N electrode (2) is in convex, described P type metal (4) is positioned at immediately below N electrode (2) convex, and the width of described P type metal (4) is less than the lower width of N electrode (2) convex.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520187888.4U CN204632795U (en) | 2015-03-31 | 2015-03-31 | A kind of LED chip structure of high light-emitting rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520187888.4U CN204632795U (en) | 2015-03-31 | 2015-03-31 | A kind of LED chip structure of high light-emitting rate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204632795U true CN204632795U (en) | 2015-09-09 |
Family
ID=54051792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520187888.4U Expired - Fee Related CN204632795U (en) | 2015-03-31 | 2015-03-31 | A kind of LED chip structure of high light-emitting rate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204632795U (en) |
-
2015
- 2015-03-31 CN CN201520187888.4U patent/CN204632795U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103346225A (en) | Vertical type graphene LED chip | |
| CN204614807U (en) | A kind of highlighted packed LED chip | |
| CN204632795U (en) | A kind of LED chip structure of high light-emitting rate | |
| CN203521455U (en) | LED chip | |
| CN205508857U (en) | Emitting diode of hole electrode | |
| CN201918385U (en) | High-power GaN (gallium nitride) based light emitting diode | |
| CN205065472U (en) | A superconductive aluminium base board of thermoelectric separation for projecting lamp | |
| CN104851950A (en) | LED chip structure with high light extracting rate | |
| CN203481264U (en) | White light LED chip | |
| CN203134800U (en) | Step type light emitting diode raising high-voltage LED process yield | |
| CN103840049A (en) | Semiconductor LED light source with customized light emitting surface shape | |
| CN203415610U (en) | Vertical type graphene LED chip | |
| CN105679909A (en) | Light-emitting diode for hole electrode | |
| CN204464320U (en) | A kind of LED chip electrode layout distribution structure | |
| CN204011475U (en) | LED paster | |
| CN204088377U (en) | A kind of super-thin high efficient BT class LED silk | |
| CN205016529U (en) | A LED light source that is used for chip of LED light source and uses its preparation | |
| CN205177872U (en) | Flip -chip LED chip layout layout structure | |
| CN202217701U (en) | High-power GaN-based LED (Light Emitting Diode) structure | |
| CN204213725U (en) | A kind of two-sided light extracting LED lamp for road lighting | |
| CN205177871U (en) | Luminous even flip -chip LED chip layout layout structure | |
| CN204204901U (en) | A kind of two-sided light extracting LED lamp being used as street lamp | |
| CN204204896U (en) | Light-emitting diode | |
| CN202034407U (en) | Led chip structure | |
| CN207818605U (en) | A kind of flip LED electrode structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150909 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |