CN204625834U - Reaction tubes and adopt the silicon core growth furnace of this reaction tubes - Google Patents
Reaction tubes and adopt the silicon core growth furnace of this reaction tubes Download PDFInfo
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- CN204625834U CN204625834U CN201520197435.XU CN201520197435U CN204625834U CN 204625834 U CN204625834 U CN 204625834U CN 201520197435 U CN201520197435 U CN 201520197435U CN 204625834 U CN204625834 U CN 204625834U
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Abstract
The utility model proposes a kind of reaction tubes, for being located in a silicon core growth furnace, this reaction tubes is nitrogenize silicone tube, it the second body comprising one first body, be located at the end on this body top and be located at the first body bottom, described end is connected at the top of the first body, and be funnel-shaped structure, described second body is at least one, and the two-port of each second body forms the protuberance and recess that cooperatively interact respectively.Reaction tubes in the utility model, due to the setting of its end, the silicon material placed also is located in end except piling inside and outside body, silicon material is fused into liquid and smaller volume in body, silicon material in this end makes up in body, finally make to be fused into liquid silicon material to be in body completely, thus prevent silicon material in body not enough and affect the problem of product.
Description
Technical field
The utility model relates to a kind of silicon materials and makes industrial technical field, refers to a kind of reaction tubes especially and adopts the silicon core growth furnace of this reaction tubes.
Background technology
Polysilicon is the starting material preparing semiconducter device and solar cell, is the foundation stone of global electronics industry and photovoltaic industry.Prepare polysilicon at present and mainly utilize chemical vapour deposition technique, adopt reaction tubes, using the deposition vehicle of silicon core as heating element and silicon, with trichlorosilane as reactant gases, hydrogen makes reducing gas, after silicon core is elevated to certain temperature, trichlorosilane and hydrogen react at silicon wicking surface and generate silicon and be deposited on silicon wicking surface, finally obtain the polysilicon wanted.But existing reaction tubes is generally the body of a straight-tube shape, because after the fusing of silicon material, volume can diminish, usually makes silicon material not enough and affect quality product.
Utility model content
The utility model proposes a kind of reaction tubes and adopt the silicon core growth furnace of this reaction tubes, solve the problem of silicon material deficiency in prior art.
The technical solution of the utility model is achieved in that
A kind of reaction tubes, for being located in a silicon core growth furnace, this reaction tubes is nitrogenize silicone tube, it the second body comprising one first body, be located at the end on this body top and be located at the first body bottom, described end is connected at the top of the first body, and be funnel-shaped structure, described second body is at least one, and the two-port of each second body forms the protuberance and recess that cooperatively interact respectively.
Preferred version is, also can be provided with one deck silicon nitride coating in described reaction tubes.
Preferred version is, the internal diameter of described end is reduced to its bottom gradually by its top, and the internal diameter of bottom is identical with the internal diameter of body, and the internal diameter of described body is all equal everywhere from top to bottom.
A kind of silicon core growth furnace, the reaction tubes comprising base, be located at the holding furnace on this base and be located in this holding furnace, this holding furnace is respectively equipped with inlet mouth and air outlet, this reaction tubes comprises a body and is located at the end on this body top, the bottom of this body is closed state, top is open state, and described end is connected at the top of body, and is funnel-shaped structure.
Preferred version is, liner plate, the first limiting plate and the second limiting plate is provided with from bottom to top successively in described holding furnace, described first limiting plate is provided with some spacing holes with corresponding respectively on the second limiting plate, described reaction tubes is arranged in the spacing hole of the first limiting plate and the second limiting plate successively, and its bottom is resisted against on liner plate.
Preferred version is, described holding furnace inwall is arranged with the multiple and heating element be mutually independent at vertical direction.
The beneficial effects of the utility model are:
Reaction tubes in the utility model, due to the setting of its end, the silicon material placed also is located in end except piling inside and outside body, silicon material is fused into liquid and smaller volume in body, silicon material in this end makes up in body, finally make to be fused into liquid silicon material to be in body completely, thus prevent silicon material in body not enough and affect the problem of product.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the sectional view of the utility model reaction tubes;
Fig. 2 is the sectional view of the silicon core growth furnace being provided with Fig. 1 reaction tubes.
In figure:
10, reaction tubes; 11, the first body; 13, end; 15, the second body; 110, draw-in groove; 20, silicon core growth furnace; 21, base; 22, holding furnace; 23, liner plate; 24, the first limiting plate; 25, the second limiting plate; 26, inlet mouth; 27, air outlet; 28, heating element; 29, spacing hole.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 1, this reaction tubes 10, for being located in a silicon core growth furnace 20, comprising one first body 11, is located at the end 13 on this first body 11 top and is located at the second body 15 of the first body 11 bottom.This reaction tubes 10 is nitrogenize silicone tube.
The cross section of this first body 11 is " U " font, and its top is open state.The internal diameter of this first body 11 is all equal everywhere from top to bottom.The periphery of this first body 11 bottom is provided with a draw-in groove 110.
This end 13 is connected at the top of the first body 11, and is wholely set with the first body 11.This end 13 is funnel-shaped structure, and namely the internal diameter of end 13 is reduced to its bottom gradually by its top, and the internal diameter of its bottom is identical with the internal diameter of the first body 11.
This second body 15 is located at the bottom of the first body 11, and is fixedly connected with the first body 11.This second body 15 can be one, two or more, specifically can decide according to the required length made of concrete reaction tubes 10.The two-port of each second body 15 forms the protuberance 150 and recess 151 that cooperatively interact respectively, to realize being interconnected between each second body 15.
Also one deck silicon nitride coating can be provided with, so that subsequent reactions pipe 10 is in the separation of silicon core in this reaction tubes 10.
Preparing in silicon core process, silicon material need be placed in reaction tubes 10, the silicon material placed also is located in end 13 except piling inside and outside body 11, when reaction tubes 10 reacts in silicon core growth furnace 20, silicon material is fused into liquid and smaller volume in reaction tubes 10, silicon material in this end 13 makes up in body 11, finally makes to be fused into liquid silicon material and is in completely in body 11, thus prevents silicon material in reaction tubes 10 not enough and affect the problem of product.
As shown in Figure 2, this silicon core growth furnace 20 comprise base 21, the holding furnace 22 be located on this base 21, the reaction tubes 10 being located at liner plate 23, first limiting plate 24, second limiting plate 25 in this holding furnace 22 and being located on the first limiting plate 24 and the second limiting plate 25.
Described holding furnace 22 is the cavity configuration adopting thermal insulation layer to make hollow form, and its top is provided with an inlet mouth 26, and sidewall is in being provided with an air outlet 27 near its bottom position.The inwall of this holding furnace 22 is provided with multiple arrangement and the heating element 28 be mutually independent at vertical direction.Described liner plate 23 level is located at the bottom of holding furnace 22.Described first limiting plate 24 and the second limiting plate 25 interval that is parallel to each other is located in the middle part of holding furnace 22, this first limiting plate 24 is connected with the inboard wall of furnace body of holding furnace 22 with the both sides of the second limiting plate 25, this first limiting plate 24 is provided with some spacing holes 29 with corresponding respectively on the second limiting plate 25, for fixation reaction pipe 10 in described spacing hole 29, make reaction tubes 10 be in vertical state and to make bottom it, against with on liner plate 23, to be also arranged in liner plate 23 by draw-in groove 110.This silicon core growth furnace 20 once can produce the silicon core of a greater number, thus improves the preparation efficiency of silicon core, and the preparation process of silicon core is simple, can not cause the waste of silicon material.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (6)
1. a reaction tubes, for being located in a silicon core growth furnace, it is characterized in that: this reaction tubes is nitrogenize silicone tube, it the second body comprising one first body, be located at the end on this body top and be located at the first body bottom, described end is connected at the top of the first body, and be funnel-shaped structure, described second body is at least one, and the two-port of each second body forms the protuberance and recess that cooperatively interact respectively.
2. reaction tubes as claimed in claim 1, is characterized in that: also can be provided with one deck silicon nitride coating in described reaction tubes.
3. reaction tubes as claimed in claim 1, it is characterized in that: the internal diameter of described end is reduced to its bottom gradually by its top, and the internal diameter of bottom is identical with the internal diameter of body, the internal diameter of described body is all equal everywhere from top to bottom.
4. a silicon core growth furnace, the reaction tubes comprising base, be located at the holding furnace on this base and be located in this holding furnace, this holding furnace is respectively equipped with inlet mouth and air outlet, it is characterized in that: this reaction tubes is the reaction tubes in claims 1 to 3 described in any one.
5. silicon core growth furnace as claimed in claim 4, it is characterized in that: in described holding furnace, be provided with liner plate, the first limiting plate and the second limiting plate from bottom to top successively, described first limiting plate is provided with some spacing holes with corresponding respectively on the second limiting plate, described reaction tubes is arranged in the spacing hole of the first limiting plate and the second limiting plate successively, and its bottom is resisted against on liner plate.
6. silicon core growth furnace as claimed in claim 4, is characterized in that: described holding furnace inwall is arranged with the multiple and heating element be mutually independent at vertical direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520197435.XU CN204625834U (en) | 2015-04-02 | 2015-04-02 | Reaction tubes and adopt the silicon core growth furnace of this reaction tubes |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520197435.XU CN204625834U (en) | 2015-04-02 | 2015-04-02 | Reaction tubes and adopt the silicon core growth furnace of this reaction tubes |
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| CN204625834U true CN204625834U (en) | 2015-09-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114132931A (en) * | 2021-12-17 | 2022-03-04 | 亚洲硅业(青海)股份有限公司 | Silicon core preparation device and method for polycrystalline silicon production |
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2015
- 2015-04-02 CN CN201520197435.XU patent/CN204625834U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114132931A (en) * | 2021-12-17 | 2022-03-04 | 亚洲硅业(青海)股份有限公司 | Silicon core preparation device and method for polycrystalline silicon production |
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