CN204595661U - A kind of high voltage source device able to programme - Google Patents

A kind of high voltage source device able to programme Download PDF

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Publication number
CN204595661U
CN204595661U CN201520182531.7U CN201520182531U CN204595661U CN 204595661 U CN204595661 U CN 204595661U CN 201520182531 U CN201520182531 U CN 201520182531U CN 204595661 U CN204595661 U CN 204595661U
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China
Prior art keywords
semiconductor
oxide
metal
pole
input
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201520182531.7U
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Chinese (zh)
Inventor
杨俊民
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Kunen Electronic Technology Co Ltd
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Suzhou Kunen Electronic Technology Co Ltd
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Priority to CN201520182531.7U priority Critical patent/CN204595661U/en
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Abstract

The utility model discloses a kind of high voltage source device able to programme, comprise operational amplifier, digital potentiometer, resistance, first metal-oxide-semiconductor, second metal-oxide-semiconductor, diode, power input, power output end, described operational amplifier comprises input positive terminal, input negative pole end, output terminal, digital potentiometer comprises signal input part, pot output terminal, digital potentiometer is in series with between described power input and ground connection, pot output terminal is connected with input positive terminal, input negative pole end is connected with power output end, output terminal is connected with the second metal-oxide-semiconductor G pole, second metal-oxide-semiconductor S pole is connected with ground connection, first metal-oxide-semiconductor is connected on power input, power output end, first metal-oxide-semiconductor G pole is connected with the second metal-oxide-semiconductor D pole, described in parallel with between G pole with the D pole of the first metal-oxide-semiconductor.The utility model low noise, low drifting output voltage and high electric current, power supply exports accurately.

Description

A kind of high voltage source device able to programme
Technical field
The utility model relates to a kind of high voltage source device able to programme, belongs to circuit engineering field.
Background technology
At present, the existing high voltage source able to programme that there is boost current and export, complicated structure, and resolution is not high, cost is high.
Utility model content
Object: in order to overcome the deficiencies in the prior art, the utility model provides a kind of high voltage source device able to programme.
Technical scheme: for solving the problems of the technologies described above, the technical solution adopted in the utility model is:
A kind of high voltage source device able to programme, comprise operational amplifier, digital potentiometer, resistance, first metal-oxide-semiconductor, second metal-oxide-semiconductor, diode, power input, power output end, described operational amplifier comprises input positive terminal, input negative pole end, output terminal, digital potentiometer comprises signal input part, pot output terminal, digital potentiometer is in series with between described power input and ground connection, pot output terminal is connected with input positive terminal, input negative pole end is connected with power output end, output terminal is connected with the second metal-oxide-semiconductor G pole, second metal-oxide-semiconductor S pole is connected with ground connection, first metal-oxide-semiconductor is connected on power input, power output end, first metal-oxide-semiconductor G pole is connected with the second metal-oxide-semiconductor D pole, described in parallel with between G pole with the D pole of the first metal-oxide-semiconductor, described first metal-oxide-semiconductor, all reversely between the D pole of the second metal-oxide-semiconductor and S pole be parallel with diode.
Described operational amplifier adopts OP184.
Described digital potentiometer adopts AD5292.
Preferably, described first metal-oxide-semiconductor is set to PMOS.
Preferably, described second metal-oxide-semiconductor is set to NMOS tube.
Beneficial effect: the one that the utility model provides high voltage source device able to programme, provides 10 bit resolutions, and output voltage range is 0-30V, can provide the output current of maximum 2.5A.This structure low noise, low drifting output voltage and high electric current, power supply exports accurately.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
As shown in Figure 1, a kind of high voltage source device able to programme, comprise operational amplifier 1, digital potentiometer 2, resistance 3, first metal-oxide-semiconductor 4, second metal-oxide-semiconductor 5, diode 6, power input 7, power output end 8, described operational amplifier 1 comprises input positive terminal 11, input negative pole end 12, output terminal 13, digital potentiometer 2 comprises signal input part 21, pot output terminal 22, digital potentiometer 2 is in series with between described power input 7 and ground connection, pot output terminal 22 is connected with input positive terminal 11, input negative pole end 12 is connected with power output end 7, output terminal 13 is connected with the second metal-oxide-semiconductor 5G pole, second metal-oxide-semiconductor 5S pole is connected with ground connection, first metal-oxide-semiconductor 4 is connected on power input 7, power output end 13, first metal-oxide-semiconductor 4G pole is connected with the second metal-oxide-semiconductor 5D pole, described in parallel with between G pole with the D pole of the first metal-oxide-semiconductor 4, described first metal-oxide-semiconductor 4, all reversely between the D pole of the second metal-oxide-semiconductor 5 and S pole be parallel with diode 6.
Described operational amplifier 1 adopts OP184.
Described digital potentiometer 2 adopts AD5292.
Preferably, described first metal-oxide-semiconductor 4 is set to PMOS.
Preferably, described second metal-oxide-semiconductor 5 is set to NMOS tube.
The above is only preferred implementation of the present utility model; be noted that for those skilled in the art; under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection domain of the present utility model.

Claims (5)

1. a high voltage source device able to programme, comprise operational amplifier, digital potentiometer, resistance, it is characterized in that: also comprise the first metal-oxide-semiconductor, second metal-oxide-semiconductor, diode, power input, power output end, described operational amplifier comprises input positive terminal, input negative pole end, output terminal, digital potentiometer comprises signal input part, pot output terminal, digital potentiometer is in series with between described power input and ground connection, pot output terminal is connected with input positive terminal, input negative pole end is connected with power output end, output terminal is connected with the second metal-oxide-semiconductor G pole, second metal-oxide-semiconductor S pole is connected with ground connection, first metal-oxide-semiconductor is connected on power input, power output end, first metal-oxide-semiconductor G pole is connected with the second metal-oxide-semiconductor D pole, described in parallel with between G pole with the D pole of the first metal-oxide-semiconductor, described first metal-oxide-semiconductor, all reversely between the D pole of the second metal-oxide-semiconductor and S pole be parallel with diode.
2. one according to claim 1 high voltage source device able to programme, is characterized in that: described operational amplifier adopts OP184.
3. one according to claim 1 high voltage source device able to programme, is characterized in that: described digital potentiometer adopts AD5292.
4. one according to claim 1 high voltage source device able to programme, is characterized in that: described first metal-oxide-semiconductor is set to PMOS.
5. one according to claim 1 high voltage source device able to programme, is characterized in that: described second metal-oxide-semiconductor is set to NMOS tube.
CN201520182531.7U 2015-03-30 2015-03-30 A kind of high voltage source device able to programme Expired - Fee Related CN204595661U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520182531.7U CN204595661U (en) 2015-03-30 2015-03-30 A kind of high voltage source device able to programme

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520182531.7U CN204595661U (en) 2015-03-30 2015-03-30 A kind of high voltage source device able to programme

Publications (1)

Publication Number Publication Date
CN204595661U true CN204595661U (en) 2015-08-26

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Country Status (1)

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CN (1) CN204595661U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104793679A (en) * 2015-03-30 2015-07-22 苏州锟恩电子科技有限公司 Programmable high-voltage source device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104793679A (en) * 2015-03-30 2015-07-22 苏州锟恩电子科技有限公司 Programmable high-voltage source device

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150826

Termination date: 20160330

CF01 Termination of patent right due to non-payment of annual fee