CN204570085U - A kind of quick growth is without the growth room of wrap single-crystal silicon carbide - Google Patents
A kind of quick growth is without the growth room of wrap single-crystal silicon carbide Download PDFInfo
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- CN204570085U CN204570085U CN201520285511.2U CN201520285511U CN204570085U CN 204570085 U CN204570085 U CN 204570085U CN 201520285511 U CN201520285511 U CN 201520285511U CN 204570085 U CN204570085 U CN 204570085U
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Abstract
The utility model belongs to field of crystal growth, relate to the growth room of a kind of quick growth without wrap single-crystal silicon carbide, inwall top, growth room is provided with seed crystal support, and growth room's internal sleeve has and top coaxial with growth room lower than the inner core on top, growth room, described inner core by graphite filter screen around forming; Graphite filter screen is provided with between outer, inner core top and growth room's inwall; Described graphite filter screen both side surface all scribbles high-temperature resistant metal compound coating; Described high-temperature resistant metal compound coating is selected from the carbide of rare metal or the nitride of rare metal or its mixture; Described rare metal is selected from tantalum or hafnium or niobium or titanium or zirconium or tungsten or vanadium.The utility model structure is simple, easy to use, adopt the utility model, the conveying of C particle can be stopped preferably, simultaneously ensure silicon carbide sublimation produce gas quickly through, so both eliminate the wrap in single-crystal silicon carbide, in turn ensure that single-crystal silicon carbide normal, grow fast, can extensively promotion and application.
Description
Technical field
The utility model belongs to field of crystal growth, relates to the growth room of a kind of quick growth without wrap single-crystal silicon carbide.
Background technology
Single-crystal silicon carbide material is the representative of third generation wide bandgap semiconductor materials, there is the character such as broad stopband, high heat conductance, the saturated rate of migration of high electronics, high breakdown electric field, compare with the s-generation semiconductor material taking GaAs representative with the first-generation semiconductor material taking silicon as representative, there is obvious superiority, be considered to manufacture the desirable semiconductor material such as opto-electronic device, Deep trench termination and high-temperature electronic device.Be widely used in white-light illuminating, optical storage, screen display, space flight and aviation, hyperthermia radiation environment, petroleum prospecting, automatization, radar and communications, automotive circuit diagram and power electronics etc.
The growth fraction of single-crystal silicon carbide material is more difficult, generally adopt physical vaporous deposition (being also the Lely method of PVT or improvement) at present, starting material general in the method are silicon carbide powder, silicon carbide powder is heated to certain temperature will significantly distil, and the silicon carbide gas decomposed can transport along thermograde and condense at silicon carbide seed place.But, silicon carbide powder sublimes needs very high temperature (> 2000 DEG C), be easy to the carbonization causing silicon carbide powder, and the small C particle produced after silicon carbide powder carbonization can transport along thermograde equally and finally form wrap in single-crystal silicon carbide, affect final single-crystal silicon carbide quality.
Summary of the invention
For the problems referred to above, the utility model proposes the growth room of a kind of quick growth without wrap single-crystal silicon carbide, adopt the utility model, the conveying of C particle can be stopped preferably, ensure that silicon carbide sublimation produces passing through of gas simultaneously, faster arrive the crystallization of seed crystal position, so both eliminate the wrap in single-crystal silicon carbide, in turn ensure that single-crystal silicon carbide normal, grow faster.
The utility model is main by the following technical solutions: a kind of quick growth is without the growth room of wrap single-crystal silicon carbide, inwall top, growth room is provided with seed crystal support, growth room's internal sleeve has and top coaxial with growth room lower than the inner core on top, growth room, described inner core by graphite filter screen around forming; Graphite filter screen is provided with between outer, inner core top and growth room's inwall; Described graphite filter screen both side surface all scribbles high-temperature resistant metal compound coating;
Described high-temperature resistant metal compound coating is selected from the carbide of rare metal or the nitride of rare metal or its mixture;
Described rare metal is selected from tantalum or hafnium or niobium or titanium or zirconium or tungsten or vanadium.
During use, first seed crystal is fixed on seed crystal support, and sic powder will be full of between growth room and inner core and compacting, fix the graphite filter screen between outer, inner core top and growth room's inwall.
Use ruhmkorff coil to heat growth room, when temperature reaches sic powder sublimation temperature, sic powder starts distillation, produces silicon carbide sublimation gas; Meanwhile, sic powder starts carbonization, and produce carbon granule, silicon carbide sublimation gas and carbon granule all move up along thermograde.In uphill process, due to the obstruction of graphite filter screen, solid-state carbon granule cannot arrive the top of growth room by graphite filter screen, and the silicon carbide sublimation gas of gaseous state sub-fraction can arrive the top of growth room by graphite filter screen between outer, inner core top and growth room's inwall, and then condense on seed crystal, carry out the growth of single-crystal silicon carbide.The silicon carbide sublimation gas of most gaseous state by the impact of thermograde, first by by graphite filter screen around inner core, then arrive the top of growth room through inner core passage, and then condense on seed crystal, carry out the growth of single-crystal silicon carbide.Arrive in the top process of growth room at silicon carbide sublimation gas by inner core passage, due to without any obstruction, lift velocity is accelerated, thus accelerates the growth of single-crystal silicon carbide.
Described graphite filter screen both side surface all scribbles high-temperature resistant metal compound coating; Described high-temperature resistant metal compound coating is selected from the carbide of rare metal or the nitride of rare metal or its mixture; Described rare metal is selected from tantalum or hafnium or niobium or titanium or zirconium or tungsten or vanadium.Why select above-mentioned materials as the coating of graphite filter screen; because above-mentioned high-temperature resistant metal compound; because of the sublimation temperature of its fusing point higher than silicon carbide; and at silicon carbide sublimation temperature, relative to silicon and hydrogen, there is unreactiveness; define layer protecting film simultaneously, avoid the carbon in graphite filter screen to impact single crystal growing.In addition, its thermal expansivity and graphite are very similar, thus avoid occurring crack between graphite and high-temperature resistant metal compound coating under sublimation temperature.
The aperture of described graphite filter screen is less than 10 microns, further ensure that fully being separated of silicon carbide sublimation gas and carbon granule.
In sum, the utility model structure is simple, easy to use, adopt the utility model, the conveying of C particle can be stopped preferably, simultaneously ensure silicon carbide sublimation produce gas quickly through, so both eliminate the wrap in single-crystal silicon carbide, in turn ensure that single-crystal silicon carbide normal, grow fast, can extensively promotion and application.
Accompanying drawing explanation
Fig. 1 is the utility model structural representation;
In figure: 1, seed crystal support, 2, graphite filter screen, 3, high-temperature resistant metal compound coating, 4, sic powder, 5, seed crystal.
Embodiment
Quick growth is without a growth room for wrap single-crystal silicon carbide, and inwall top, growth room is provided with seed crystal support 1, and growth room's internal sleeve has and top coaxial with growth room lower than the inner core on top, growth room, described inner core by graphite filter screen 2 around forming; Graphite filter screen 2 is provided with between outer, inner core top and growth room's inwall; Described graphite filter screen 2 both side surface all scribbles high-temperature resistant metal compound coating 3;
Described high-temperature resistant metal compound coating 3 is selected from the carbide of rare metal or the nitride of rare metal or its mixture;
Described rare metal is selected from tantalum or hafnium or niobium or titanium or zirconium or tungsten or vanadium.
During use, first seed crystal 5 is fixed on seed crystal support 1, sic powder 4 will be full of between growth room and inner core and compacting, fixes the graphite filter screen 2 between outer, inner core top and growth room's inwall.
Use ruhmkorff coil to heat growth room, when temperature reaches sic powder 4 sublimation temperature, sic powder 4 starts distillation, produces silicon carbide sublimation gas; Meanwhile, sic powder 4 starts carbonization, and produce carbon granule, silicon carbide sublimation gas and carbon granule all move up along thermograde.In uphill process, due to the obstruction of graphite filter screen 2, solid-state carbon granule cannot arrive the top of growth room by graphite filter screen 2, and the silicon carbide sublimation gas of gaseous state sub-fraction can arrive the top of growth room by the graphite filter screen 2 between outer, inner core top and growth room's inwall, and then condense on seed crystal 5, carry out the growth of single-crystal silicon carbide.The silicon carbide sublimation gas of most gaseous state by the impact of thermograde, first by by graphite filter screen 2 around inner core, then arrive the top of growth room through inner core passage, and then condense on seed crystal 5, carry out the growth of single-crystal silicon carbide.Arrive in the top process of growth room at silicon carbide sublimation gas by inner core passage, due to without any obstruction, lift velocity is accelerated, thus accelerates the growth of single-crystal silicon carbide.
Described graphite filter screen 2 both side surface all scribbles high-temperature resistant metal compound coating 3; Described high-temperature resistant metal compound coating 3 is selected from the carbide of rare metal or the nitride of rare metal or its mixture; Described rare metal is selected from tantalum or hafnium or niobium or titanium or zirconium or tungsten or vanadium.Why select above-mentioned materials as the coating of graphite filter screen 2; because above-mentioned high-temperature resistant metal compound; because of the sublimation temperature of its fusing point higher than silicon carbide; and at silicon carbide sublimation temperature, relative to silicon and hydrogen, there is unreactiveness; define layer protecting film simultaneously, avoid the carbon in graphite filter screen 2 to impact single crystal growing.In addition, its thermal expansivity and graphite are very similar, thus avoid occurring crack between graphite and high-temperature resistant metal compound coating under sublimation temperature.
The aperture of described graphite filter screen 2 is less than 10 microns, further ensure that fully being separated of silicon carbide sublimation gas and carbon granule.
Claims (2)
1. one kind grows the growth room without wrap single-crystal silicon carbide fast, inwall top, growth room is provided with seed crystal support (1), it is characterized in that: growth room's internal sleeve has and top coaxial with growth room lower than the inner core on top, growth room, described inner core by graphite filter screen (2) around forming; Graphite filter screen (2) is provided with between outer, inner core top and growth room's inwall; Described graphite filter screen (2) both side surface all scribbles high-temperature resistant metal compound coating (3);
Described high-temperature resistant metal compound coating (3) is selected from the carbide of rare metal or the nitride of rare metal or its mixture;
Described rare metal is selected from tantalum or hafnium or niobium or titanium or zirconium or tungsten or vanadium.
2. quick growth according to claim 1 is without the growth room of wrap single-crystal silicon carbide, it is characterized in that: the aperture of described graphite filter screen (2) is less than 10 microns.
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| CN201520285511.2U CN204570085U (en) | 2015-05-05 | 2015-05-05 | A kind of quick growth is without the growth room of wrap single-crystal silicon carbide |
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| CN201520285511.2U CN204570085U (en) | 2015-05-05 | 2015-05-05 | A kind of quick growth is without the growth room of wrap single-crystal silicon carbide |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105671637A (en) * | 2016-02-02 | 2016-06-15 | 北京华进创威电子有限公司 | Sustained release device for growing of SiC single crystals with PVT (physical vapor transport) method |
| CN106367812A (en) * | 2016-10-21 | 2017-02-01 | 北京鼎泰芯源科技发展有限公司 | Graphite crucible capable of enhancing radial temperature uniformity of silicon carbide powder source |
| CN106544724A (en) * | 2016-12-09 | 2017-03-29 | 河北同光晶体有限公司 | A kind of preparation method of the graphite plate coating in silicon carbide monocrystal growth thermal field structure |
| CN107059130A (en) * | 2017-04-20 | 2017-08-18 | 山东大学 | The Novel crucible of inclusion enclave and the method using crucible growth monocrystalline in a kind of reduction single-crystal silicon carbide |
| CN111394788A (en) * | 2020-04-03 | 2020-07-10 | 江苏超芯星半导体有限公司 | Method and device for preparing cubic silicon carbide crystals |
| CN113789572A (en) * | 2021-09-17 | 2021-12-14 | 北京天科合达半导体股份有限公司 | Crucible structure for growing silicon carbide single crystal and method for growing silicon carbide single crystal |
| CN115573029A (en) * | 2022-10-25 | 2023-01-06 | 浙江大学杭州国际科创中心 | Large-size silicon carbide growth device |
-
2015
- 2015-05-05 CN CN201520285511.2U patent/CN204570085U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105671637A (en) * | 2016-02-02 | 2016-06-15 | 北京华进创威电子有限公司 | Sustained release device for growing of SiC single crystals with PVT (physical vapor transport) method |
| CN106367812A (en) * | 2016-10-21 | 2017-02-01 | 北京鼎泰芯源科技发展有限公司 | Graphite crucible capable of enhancing radial temperature uniformity of silicon carbide powder source |
| CN106544724A (en) * | 2016-12-09 | 2017-03-29 | 河北同光晶体有限公司 | A kind of preparation method of the graphite plate coating in silicon carbide monocrystal growth thermal field structure |
| CN107059130A (en) * | 2017-04-20 | 2017-08-18 | 山东大学 | The Novel crucible of inclusion enclave and the method using crucible growth monocrystalline in a kind of reduction single-crystal silicon carbide |
| CN107059130B (en) * | 2017-04-20 | 2019-06-18 | 山东大学 | The crucible of inclusion enclave and the method using crucible growth monocrystalline in a kind of reduction single-crystal silicon carbide |
| CN111394788A (en) * | 2020-04-03 | 2020-07-10 | 江苏超芯星半导体有限公司 | Method and device for preparing cubic silicon carbide crystals |
| CN113789572A (en) * | 2021-09-17 | 2021-12-14 | 北京天科合达半导体股份有限公司 | Crucible structure for growing silicon carbide single crystal and method for growing silicon carbide single crystal |
| CN115573029A (en) * | 2022-10-25 | 2023-01-06 | 浙江大学杭州国际科创中心 | Large-size silicon carbide growth device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Quick growth does not have growth room of parcel thing carborundum single crystal Effective date of registration: 20200622 Granted publication date: 20150819 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC Co.,Ltd. Registration number: Y2020980003315 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201119 Granted publication date: 20150819 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: Shandong Tianyue Advanced Materials Technology Co.,Ltd. Registration number: Y2020980003315 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP03 | "change of name, title or address" |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 3-409, Yinhe building, 2008 Xinluo street, Lixia District, Jinan City, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
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| CP03 | "change of name, title or address" |