CN204497356U - A kind of 3D microwave cavity containing direct current lead structure - Google Patents

A kind of 3D microwave cavity containing direct current lead structure Download PDF

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CN204497356U
CN204497356U CN201520201982.0U CN201520201982U CN204497356U CN 204497356 U CN204497356 U CN 204497356U CN 201520201982 U CN201520201982 U CN 201520201982U CN 204497356 U CN204497356 U CN 204497356U
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cavity
circuit board
microwave resonant
microwave
utility
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郭国平
孔伟成
邓光伟
李舒啸
李海鸥
曹刚
肖明
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University of Science and Technology of China USTC
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Abstract

本实用新型公开了一种3D微波谐振腔,包括腔体、电路板、输入端口和输出端口,腔体为长方体,包括壳体和壳体内部开出的空腔;输入端口(3)和输出端口从腔体(1)的上部穿入壳体与空腔连通,腔体从其一个侧面沿着空腔的延伸方向朝向空腔开有一个狭槽;电路板包括外接部分(2a)和内插部分,外接部分的宽度较宽,内插部分的宽度较窄且呈长条状,内插部分经由狭槽插入空腔中。且内插部分包括沿其插入方向延伸的金属引线、位于插入部分末端的量子比特设备安装位、以及连接该金属引线与量子比特设备安装位的等电位连接线。本实用新型能达到更好的耦合效果,且能实现对量子比特的精确调控。

The utility model discloses a 3D microwave resonant cavity, which comprises a cavity body, a circuit board, an input port and an output port. The port penetrates the housing from the upper part of the cavity (1) and communicates with the cavity, and the cavity has a slot from one side along the extending direction of the cavity toward the cavity; the circuit board includes an outer connection part (2a) and an inner For the insertion part, the width of the outer part is wider, and the width of the inner part is narrower and elongated, and the inner part is inserted into the cavity through the slot. And the interpolation part includes a metal lead extending along its insertion direction, a qubit device installation position at the end of the insertion part, and an equipotential connection line connecting the metal lead and the qubit device installation position. The utility model can achieve better coupling effect, and can realize precise control of qubits.

Description

一种含直流引线结构的3D微波谐振腔A 3D Microwave Resonator with a DC Lead Structure

技术领域technical field

本实用新型涉及一种微波电路器件,特别涉及一种包含直流引线结构的3D微波谐振腔。The utility model relates to a microwave circuit device, in particular to a 3D microwave resonant cavity including a direct current lead structure.

背景技术Background technique

半导体量子芯片是在传统半导体工业的基础上,充分利用量子力学效应,实现高效率并行量子计算的核心部件。量子比特,可以是量子点,也可以是超导量子干涉仪等装置,是量子芯片上的基本单元,可以储存和操作量子信息。但是要完成量子计算过程,还需要实现量子比特之间的耦合和数据交换,以及量子信息的探测读出。普通的电子线路无法传递量子信息,因此我们需要一些特殊的电子元件为我们实现这一功能。微波谐振腔可以激发和传递能够携带量子信息的微波光子,实现这一功能,而3D微波谐振腔是一种高效率的微波谐振腔。我们希望获得一种能够与量子比特实现良好的耦合,具有合适的品质因素(即Q值),同时又能加入直流引线结构实现对量子比特进行精确调控,同时也可以作为一种有效的探测器,读出量子比特的信息。The semiconductor quantum chip is based on the traditional semiconductor industry, making full use of quantum mechanical effects to realize the core components of high-efficiency parallel quantum computing. Qubits, which can be quantum dots or devices such as superconducting quantum interferometers, are the basic units on quantum chips that can store and manipulate quantum information. However, to complete the quantum computing process, it is also necessary to realize the coupling and data exchange between qubits, as well as the detection and readout of quantum information. Ordinary electronic circuits cannot transmit quantum information, so we need some special electronic components to achieve this function for us. Microwave resonators can excite and transmit microwave photons that can carry quantum information to achieve this function, and 3D microwave resonators are high-efficiency microwave resonators. We hope to obtain a kind that can achieve good coupling with the qubit, has a suitable quality factor (ie, Q value), and at the same time can add a DC lead structure to achieve precise control of the qubit, and can also be used as an effective detector. , to read out the information of the qubit.

实用新型内容Utility model content

(一)要解决的技术问题(1) Technical problems to be solved

本实用新型针对上述要求,设计了一种含直流引线结构的3D谐振腔装置,能够满足量子比特探测和相互之间通信的要求。Aiming at the above requirements, the utility model designs a 3D resonant cavity device with a direct current lead structure, which can meet the requirements of qubit detection and mutual communication.

(二)技术方案(2) Technical solutions

为解决上述技术问题,本实用新型提出一种3D微波谐振腔,包括腔体、电路板、输入端口和输出端口,其中,所述腔体为长方体,包括壳体和壳体内部开出的空腔,所述空腔的延伸方向与所述腔体的长度方向一致;所述输入端口和输出端口从腔体的上部穿入壳体以与所述空腔连通,腔体从其一个侧面沿着所述空腔的延伸方向朝向空腔开有一个狭槽;所述电路板包括外接部分和内插部分,外接部分的宽度较宽,内插部分的宽度较窄且呈长条状,使得电路板整体类似一个“T”形;所述内插部分能够经由所述腔体的狭槽插入腔体的空腔中;且该内插部分包括沿其插入方向延伸的金属引线、位于插入部分末端的量子比特设备安装位、以及连接该金属引线与量子比特设备安装位的等电位连接线。In order to solve the above-mentioned technical problems, the utility model proposes a 3D microwave resonant cavity, which includes a cavity, a circuit board, an input port and an output port, wherein the cavity is a cuboid, including a shell and a cavity inside the shell. Cavity, the extending direction of the cavity is consistent with the length direction of the cavity; the input port and the output port penetrate the casing from the upper part of the cavity to communicate with the cavity, and the cavity is along one side of the cavity A slot is opened toward the cavity along the extending direction of the cavity; the circuit board includes an external part and an internal part, the external part has a wide width, and the internal part has a narrow width and is elongated, so that The circuit board as a whole resembles a "T" shape; the insertion part can be inserted into the cavity of the cavity through the slot of the cavity; and the insertion part includes metal leads extending along the insertion direction, located in the insertion part The qubit device installation position at the end, and the equipotential connection line connecting the metal lead and the qubit device installation position.

根据本实用新型的具体实施方式,所述腔体由前后两部分组成,两部分结构对称并能通过机械结构结合在一起。According to a specific embodiment of the present invention, the cavity is composed of front and rear parts, the two parts are symmetrical in structure and can be combined through a mechanical structure.

根据本实用新型的具体实施方式,所述输入端口及输出端口的接入位置对称地分布于所述腔体的上表面。According to a specific embodiment of the present invention, the access positions of the input port and the output port are symmetrically distributed on the upper surface of the cavity.

根据本实用新型的具体实施方式,当所述电路板内插部分全部插入所述腔体时,所述量子比特设备安装位正好位于所述腔体的空腔的中心。According to a specific implementation manner of the present utility model, when the circuit board insertion part is completely inserted into the cavity, the installation position of the qubit device is just located in the center of the cavity of the cavity.

根据本实用新型的具体实施方式,所述腔体的外部还具有一个固定部,该固定部位于电路板的一侧并与腔体形成一个整体,当电路板的内插部分全部插入腔体时,电路板的外接部分可以固定在该固定部。According to a specific embodiment of the present utility model, the outside of the cavity also has a fixing part, which is located on one side of the circuit board and forms an integral body with the cavity. When all the insertion parts of the circuit board are inserted into the cavity , the external part of the circuit board can be fixed on the fixing part.

根据本实用新型的具体实施方式,所述电路板2的内插部分的伸入方向与所述输入端口、输出端口的伸入方向垂直。According to a specific embodiment of the present invention, the insertion direction of the insertion part of the circuit board 2 is perpendicular to the insertion direction of the input port and the output port.

根据本实用新型的具体实施方式,所述腔体的外壳为纯铝制成。According to a specific embodiment of the utility model, the shell of the cavity is made of pure aluminum.

根据本实用新型的具体实施方式,所述腔体的空腔位于所述壳体的中心。According to a specific embodiment of the present utility model, the cavity of the cavity is located at the center of the housing.

根据本实用新型的具体实施方式,所述电路板为PCB板。According to a specific embodiment of the present utility model, the circuit board is a PCB board.

(三)有益效果(3) Beneficial effects

采用本实用新型使用的技术方案,完全能够满足量子芯片的应用要求,具体表现在:Adopting the technical solution used in the utility model can fully meet the application requirements of the quantum chip, specifically manifested in:

1.本实用新型的输入输出端口位于3D腔外壁的同一侧,并且对称分布,使3D腔内部的电场分布具有高度的对称性;1. The input and output ports of the utility model are located on the same side of the outer wall of the 3D cavity, and are symmetrically distributed, so that the electric field distribution inside the 3D cavity has a high degree of symmetry;

2.本实用新型在3D微波谐振腔的腔体一侧开有狭槽,位置均经过多次模拟验证,电磁波并不会从缝隙泄露造成损耗,也不会通过缝隙引入外部的噪声,电路板通过缝隙插入3D腔内后也不会造成电场强度的明显衰减;2. The utility model has a slot on one side of the cavity of the 3D microwave resonator. The position has been verified by multiple simulations. The electromagnetic wave will not leak from the gap to cause loss, and will not introduce external noise through the gap. The circuit board After being inserted into the 3D cavity through the gap, it will not cause significant attenuation of the electric field strength;

3.本实用新型使用了刻有特制金属引线结构的电路板,在电路板插入3D微波谐振腔后,金属引线的方向使其也不会造成电场强度的明显衰减,相反,在局部还能增强电场强度,达到更好的耦合效果;3. This utility model uses a circuit board engraved with a special metal lead structure. After the circuit board is inserted into the 3D microwave resonator, the direction of the metal lead will not cause a significant attenuation of the electric field intensity. On the contrary, it can also be enhanced locally Electric field strength to achieve better coupling effect;

4.本实用新型使用位于电路板上的金属引线,以及等电位连接线,将量子比特设备上的电极连通到外界,与测量设备连接,从而实现了对量子比特的精确调控。4. The utility model uses the metal leads on the circuit board and the equipotential connection line to connect the electrodes on the qubit device to the outside world and connect to the measuring device, thereby realizing the precise regulation of the qubit.

附图说明Description of drawings

图1是本实用新型的一个实施例的3D微波谐振腔的结构示意图;Fig. 1 is a schematic structural view of a 3D microwave resonator according to an embodiment of the present invention;

图2是本实用新型的上述实施例中采用的腔体的结构示意图;Fig. 2 is a schematic structural view of the cavity adopted in the above-mentioned embodiment of the utility model;

图3是本实用新型的上述实施例中采用的电路板的结构示意图;Fig. 3 is the structural representation of the circuit board that adopts in the above-mentioned embodiment of the utility model;

图4是本实用新型的上述实施例的电路板完全插入腔体时的示意图;Fig. 4 is a schematic diagram when the circuit board of the above-mentioned embodiment of the present invention is fully inserted into the cavity;

图5是为使用本实用新型实施例的3D微波谐振腔对砷化镓双量子点进行探测的一个实例的示意图。Fig. 5 is a schematic diagram of an example of using the 3D microwave resonant cavity of the embodiment of the present invention to detect gallium arsenide double quantum dots.

具体实施方式Detailed ways

本实用新型提出一种3D微波谐振腔,包括腔体、电路板、输入端口和输出端口,腔体为长方体,包括壳体和壳体内部开出的空腔,空腔一般位于壳体的中心,且的延伸方向与腔体的长度方向一致。输入端口和输出端口从腔体的上部穿入壳体以与空腔连通。腔体从其一个侧面沿着空腔的延伸方向向空腔开有一个狭槽。The utility model proposes a 3D microwave resonant cavity, which includes a cavity body, a circuit board, an input port and an output port. The cavity body is a cuboid, including a shell and a cavity opened inside the shell. The cavity is generally located in the center of the shell. , and the extension direction is consistent with the length direction of the cavity. The input port and the output port penetrate the housing from the upper portion of the cavity to communicate with the cavity. A slot is opened to the cavity from one side of the cavity along the extending direction of the cavity.

电路板包括外接部分和内插部分,外接部分的宽度较宽,内插部分的宽度较窄,呈长条状,使得电路板整体类似一个“T”形。所述内插部分能够经由所述腔体的狭槽插入腔体的空腔中。所述电路板的内插部分刻有沿其插入方向延伸的金属引线、位于插入部分末端的量子比特设备安装位和连接金属引线与量子比特设备安装位的等电位连接线(bonding wires)。金属引线以及等电位连接线共同构成本实用新型的直流引线结构。The circuit board includes an external part and an internal part. The external part has a wider width, and the internal part has a narrower width and is in the shape of a long strip, so that the circuit board as a whole resembles a "T" shape. The insertion portion is insertable into the cavity of the cavity via the slot of the cavity. The interpolation part of the circuit board is engraved with metal leads extending along its insertion direction, qubit device installation positions at the end of the insertion part, and equipotential bonding wires (bonding wires) connecting the metal leads and the qubit device installation positions. The metal lead wire and the equipotential connection wire together constitute the DC lead wire structure of the utility model.

本实用新型的腔体可以采用现有的3D微波谐振腔,其外壳通常为纯铝制成。输入端口及输出端口的接入位置通常对称地分布于腔体的上表面,它们的目的分别是为3D微波谐振腔提供输入的微波信号,以及测量输出信号的强度。铝制外壳的腔体的目的是在极低温下形成超导的理想边界,用来减少内部微波通过边界反射产生的损耗。内部特定尺寸的空槽可以构造特定的驻波模式,每一种驻波模式的频率即微波在腔内的谐振频率。铝的超导临界温度较高(1.198K),在量子比特工作的及低温下,呈现超导特性,使3D腔的边界变成理想边界,从而极大地减少因为耗散产生的能量损耗。同时因为在极低温下热噪声很小,所以这种谐振腔可以维持在腔内只有数个甚至单个光子的状态,从而准确地传递所需的量子信息。The cavity body of the utility model can adopt the existing 3D microwave resonant cavity, and its shell is usually made of pure aluminum. The access positions of the input port and the output port are usually distributed symmetrically on the upper surface of the cavity, and their purpose is to provide the input microwave signal for the 3D microwave resonator and measure the intensity of the output signal respectively. The purpose of the cavity of the aluminum casing is to form a superconducting ideal boundary at extremely low temperature to reduce the loss caused by internal microwave reflection through the boundary. The cavity with a specific size inside can construct a specific standing wave mode, and the frequency of each standing wave mode is the resonant frequency of the microwave in the cavity. Aluminum has a high superconducting critical temperature (1.198K). It exhibits superconducting characteristics at the working temperature of the qubit and at low temperature, making the boundary of the 3D cavity an ideal boundary, thereby greatly reducing the energy loss caused by dissipation. At the same time, because the thermal noise is very small at extremely low temperatures, this resonant cavity can maintain a state where there are only a few or even a single photon in the cavity, thereby accurately transmitting the required quantum information.

腔体可以是由前后两部分组成,两部分结构对称并能通过机械结构结合在一起。由此,当前后两部分分离后,即打开腔体后,可以在腔体的正中心放入量子比特设备。输入端口及输出端口的伸入方向一般与腔体的前后表面平行。当3D腔闭合,并且在极低温下工作时,量子比特设备由于处于正中心,感受到的微波强度最大,从而能达到最大耦合。量子比特设备安装在电路板的量子比特设备安装位上,当电路板的内插部分完全伸入腔体时,使得量子比特设备放置到腔体的空腔的中心。The cavity can be composed of front and rear parts, the two parts are symmetrical in structure and can be combined through a mechanical structure. Therefore, after the front and rear parts are separated, that is, after the cavity is opened, a qubit device can be placed in the very center of the cavity. The extending direction of the input port and the output port is generally parallel to the front and rear surfaces of the cavity. When the 3D cavity is closed and works at an extremely low temperature, the qubit device is in the very center, and the microwave intensity felt is the highest, so that the maximum coupling can be achieved. The qubit device is installed on the qubit device installation position of the circuit board, and when the interpolation part of the circuit board fully extends into the cavity, the qubit device is placed in the center of the cavity of the cavity.

量子比特设备粘附在电路板的量子比特设备安装位上,通过等电位连接线(bonding wires)一一连接量子比特设备上的电极与电路板上的对应金属引线。为了在工作时使量子比特设备位于腔体的空腔的正中心,本实用新型中设定电路板的内插部分的长度及腔体的狭槽的位置,使得当所述内插部分全部插入腔体时,量子比特设备安装位正好位于腔体的空腔的中心。The qubit device is attached to the qubit device installation position on the circuit board, and the electrodes on the qubit device are connected to the corresponding metal leads on the circuit board through equipotential bonding wires. In order to make the qubit device located in the center of the cavity of the cavity during operation, the length of the interpolation part of the circuit board and the position of the slot of the cavity are set in the utility model, so that when the interpolation part is fully inserted When the cavity is formed, the mounting position of the qubit device is exactly located in the center of the cavity of the cavity.

为了使引线的方向不影响腔体内部电磁场的分布,电路板的的内插部分的伸入方向与输入端口、输出端口的伸入方向垂直。In order to make the direction of the lead wire not affect the distribution of the electromagnetic field inside the cavity, the insertion direction of the circuit board's interpolation part is perpendicular to the insertion direction of the input port and the output port.

根据本实用新型的优选实施方式,腔体的外部还可具有一个固定部,该固定部位于电路板的一侧并与腔体形成一个整体,当电路板的内插部分全部插入腔体时,电路板的外接部分可以固定在该腔体的固定部。According to a preferred embodiment of the present invention, the outside of the cavity can also have a fixing part, which is located on one side of the circuit board and forms an integral body with the cavity. When all the inserting parts of the circuit board are inserted into the cavity, The external part of the circuit board can be fixed on the fixing part of the cavity.

在本实用新型中,电路板上的金属引线结构的目的是连接粘附于电路板末端的量子比特设备上的电极,以实现对量子比特的精确调控。金属引线的分布方向是经过详细的模拟,沿着插入方向排布,金属引线不仅不会减弱腔内电场强度,反而会在局部放大电场强度,达到更好的耦合效果。金属引线结构延伸至电路板外部,与外界测量设备连接。In the utility model, the purpose of the metal lead structure on the circuit board is to connect the electrodes on the qubit device attached to the end of the circuit board, so as to realize the precise control of the qubit. The distribution direction of the metal leads is simulated in detail. They are arranged along the insertion direction. Not only will the metal leads not weaken the electric field strength in the cavity, but they will amplify the electric field strength locally to achieve a better coupling effect. The metal lead structure extends to the outside of the circuit board to connect with external measurement equipment.

为使本实用新型的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本实用新型作进一步的详细说明。In order to make the purpose, technical solutions and advantages of the utility model clearer, the utility model will be further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

图1是本实用新型的一个实施例的3D微波谐振腔的结构示意图。参见附图1,本实用新型的3D微波谐振腔包括腔体1、电路板2、输入端口3和输出端口4。输入端口3和输出端口4位于腔体的上方,电路板2从腔体1的一个侧面伸入腔体的内部。需要说明的是,腔体1在垂直于纸面方向上是具有厚度的,图1是正视图,故未予显示。而电路板2的厚度较小,为薄片状。并且,腔体1由前后两部分组成,两部分结构对称并能通过机械结构结合在一起。而在该图1中显示的是拿掉了其中前半部分后的示意图。Fig. 1 is a schematic structural diagram of a 3D microwave resonator according to an embodiment of the present invention. Referring to accompanying drawing 1 , the 3D microwave resonant cavity of the present invention includes a cavity body 1 , a circuit board 2 , an input port 3 and an output port 4 . The input port 3 and the output port 4 are located above the cavity, and the circuit board 2 protrudes into the cavity from one side of the cavity 1 . It should be noted that the cavity 1 has a thickness in a direction perpendicular to the paper, and FIG. 1 is a front view, so it is not shown. The thickness of the circuit board 2 is relatively small, and it is in the shape of a sheet. Moreover, the cavity 1 is composed of two parts, the front and the back, and the two parts are symmetrical in structure and can be combined through a mechanical structure. However, what is shown in FIG. 1 is a schematic diagram after removing the first half thereof.

图2是本实用新型的上述实施例中采用的腔体的结构示意图。如图2所示,腔体1为长方体,包括壳体11和壳体内部开出的空腔12,空腔的延伸方向与腔体的长度方向一致。输入端口3和输出端口4从腔体1的上部穿入壳体11以与空腔12连通。腔体1从其一个侧面沿着空腔的延伸方向向空腔开有一个狭槽13。输入端口3和输出端口4从腔体1的上部垂直接入腔体1内。电路板2从腔体1的开有狭槽13的一个侧面经由该狭槽13伸入,并且,电路板2的平面平行于腔体1前、后平面。图中13a是狭槽外部开口的狭缝。Fig. 2 is a schematic structural view of the cavity adopted in the above-mentioned embodiment of the present utility model. As shown in FIG. 2 , the cavity 1 is a cuboid, including a casing 11 and a cavity 12 opened inside the casing, and the extending direction of the cavity is consistent with the length direction of the cavity. The input port 3 and the output port 4 penetrate the housing 11 from the upper part of the cavity 1 to communicate with the cavity 12 . The cavity body 1 has a slot 13 opened into the cavity from one side thereof along the extending direction of the cavity. The input port 3 and the output port 4 are vertically inserted into the cavity 1 from the upper part of the cavity 1 . The circuit board 2 protrudes from one side of the cavity 1 with the slot 13 through the slot 13 , and the plane of the circuit board 2 is parallel to the front and rear planes of the cavity 1 . 13a in the figure is the slit of the external opening of the slit.

图3是本实用新型的上述实施例中采用的电路板的结构示意图。如图3所示,电路板2为PCB板,包括外接部分2a和内插部分2b,外接部分2a的宽度较宽,内插部分2b的宽度较窄,呈长条状,使得电路板整体类似一个“T”形。所述内插部分2b能够经由所述腔体1的狭槽13插入腔体的空腔中。所述电路板的内插部分2b刻有沿其插入方向延伸的金属引线21,位于插入部分2b末端的位置是量子比特设备安装位2d,该安装位2d用于安装量子比特安装设备。在量子比特设备安装位2d和金属线结21之间的电路板上的位置的等电位连接线区2c,其中分布有等电位连接线(bonding wires,图中未示出)。金属引线21以及等电位连接线共同构成本实用新型的直流引线结构。由于等电位连接线极短且细,故未在图3中画出。Fig. 3 is a structural schematic diagram of the circuit board used in the above-mentioned embodiment of the present utility model. As shown in Figure 3, the circuit board 2 is a PCB board, including an external part 2a and an interpolation part 2b. The width of the external part 2a is relatively wide, and the width of the interpolation part 2b is narrow and strip-shaped, so that the circuit board as a whole is similar to A "T" shape. The inserting portion 2b can be inserted into the cavity of the cavity 1 via the slot 13 of the cavity. The insertion part 2b of the circuit board is engraved with metal leads 21 extending along its insertion direction, and the position at the end of the insertion part 2b is a qubit device installation position 2d, which is used for installing the qubit installation device. In the equipotential bonding line area 2c at the position on the circuit board between the qubit device installation position 2d and the metal wire junction 21, equipotential bonding wires (bonding wires, not shown in the figure) are distributed therein. The metal lead wire 21 and the equipotential connection wire together constitute the DC lead wire structure of the present invention. Since the equipotential bonding line is extremely short and thin, it is not drawn in Figure 3.

电路板2的外接部分2a固定在腔体1的外壳11上(外壳向电路板2的部分延伸出一固定部,未在图在示出),负责将位于腔体1内的直流引线导出。在外接部分2a的左端,有通用的8针孔插槽底座结构,焊接好插槽后,即可将测量设备的引线插上,连通直流引线,从而最终控制量子比特设备。The external part 2a of the circuit board 2 is fixed on the shell 11 of the cavity 1 (a fixed part extends from the shell to the circuit board 2, not shown in the figure), and is responsible for leading out the DC leads in the cavity 1. At the left end of the external part 2a, there is a common 8-pin hole socket base structure. After the socket is welded, the lead wire of the measuring device can be plugged in to connect the DC lead wire, so as to finally control the qubit device.

如图1所示,金属引线21的方向是与输入端口3、输出端口4的伸入方向正交的。另需要说明的是,金属引线21的引线数量并非固定,出于不同的需求,以及尺寸的限制,引线的数量可为8根至16根。等电位连接线则可使用现有的wire bonding设备。As shown in FIG. 1 , the direction of the metal lead 21 is perpendicular to the direction in which the input port 3 and the output port 4 extend. It should also be noted that the number of metal leads 21 is not fixed, and the number of leads can be 8 to 16 due to different requirements and size constraints. Equipotential bonding lines can use existing wire bonding equipment.

本实用新型中涉及的量子比特设备可采用现有的设备,但由于本实用新型的目的即用于精确操控各种各样的量子比特设备,从而量子比特设备构成了本实用新型的一种附属配件。The qubit equipment involved in the utility model can adopt existing equipment, but since the purpose of the utility model is to precisely control various qubit equipment, the qubit equipment constitutes a subsidiary of the utility model. Accessories.

图4是本实用新型的上述实施例的电路板完全插入腔体时的示意图。经过本申请的设计人的大量模拟,在3D微波谐振腔的正常工作模式下,腔体内的空腔的正中心为微波最强处。因此,为了达到最大耦合,本本明将量子比特设备安置在空腔的正中心。实现这一点需要使量子比特设备安装在在安装位2d上,且电路板的插入部分2b的长度正好到达空腔12的正中心。Fig. 4 is a schematic diagram of the above embodiment of the present invention when the circuit board is fully inserted into the cavity. After a lot of simulations by the designer of the present application, in the normal working mode of the 3D microwave resonator, the center of the cavity in the cavity is the strongest microwave. Therefore, in order to achieve maximum coupling, we placed the qubit device in the very center of the cavity. To achieve this, the qubit device needs to be installed on the installation position 2d, and the length of the insertion part 2b of the circuit board just reaches the exact center of the cavity 12.

图5是为使用本实用新型实施例的3D微波谐振腔对砷化镓双量子点进行探测的一个实例的示意图。幅值极低的微波信号由网络分析仪5输出端口出发,经过本实用新型所包含的3D微波谐振腔的输入端口,在3D微波谐振腔内达到谐振后,经过3D腔的输出端口4,再返回网络分析仪5的输入端口。网络分析仪5可以给出整个电路的S参数的幅值、相位、谐振峰Q值等信息。该实施例所使用的量子比特设备,即砷化镓双量子点8,经由电路板2的等电位连接线与金属引线21,该砷化镓双量子点8与一系列用于直流偏置的锁相放大器6连接。锁相放大器6的作用是给每个输出端口一个恒定的直流电压偏置,从而借由本实用新型的直流引线结构实现了对该砷化镓双量子点8的精确调控作用。在合适的直流偏置下,3D微波谐振腔中的微波光子与砷化镓双量子点8中的电子处于耦合状态,可以相互交换信息,从而影响到微波光子的谐振特性,最终反映在测出的S参数上。本实施例中所使用的网络分析仪5以及锁相放大器6均通过电脑7控制,达到大量采集与存储数据的目的。Fig. 5 is a schematic diagram of an example of using the 3D microwave resonant cavity of the embodiment of the present invention to detect gallium arsenide double quantum dots. The microwave signal with extremely low amplitude starts from the output port 5 of the network analyzer, passes through the input port of the 3D microwave resonant cavity included in the utility model, and after reaching resonance in the 3D microwave resonant cavity, passes through the output port 4 of the 3D cavity, and then passes through the output port 4 of the 3D cavity. Returns the input port of network analyzer 5. The network analyzer 5 can give information such as the amplitude, phase, and resonant peak Q value of the S parameters of the entire circuit. The qubit device used in this embodiment, that is, gallium arsenide double quantum dots 8, via the equipotential connection line of the circuit board 2 and the metal lead 21, the gallium arsenide double quantum dots 8 and a series of DC biasing The lock-in amplifier 6 is connected. The function of the lock-in amplifier 6 is to bias each output port with a constant DC voltage, so that the precise regulation of the gallium arsenide double quantum dot 8 is realized by means of the DC lead structure of the present invention. Under a suitable DC bias, the microwave photons in the 3D microwave resonator and the electrons in the gallium arsenide double quantum dot 8 are in a coupled state, and can exchange information with each other, thus affecting the resonance characteristics of the microwave photons, which is finally reflected in the measured on the S parameter. The network analyzer 5 and the lock-in amplifier 6 used in this embodiment are all controlled by a computer 7 to achieve the purpose of collecting and storing a large amount of data.

如上所述,在本实用新型中,微波光子在由铝壳包裹的长方体空间内传输,形成特定的驻波模式。这种结构有两个优势:一是长方体空腔内的驻波模式可以轻易地由电磁波传输的边界条件求解得出,实物与理论模拟的误差更小,从而可控度更高;二是在3D微波谐振腔内,电场的分布具有高度的对称性,所以极易获取电场强度最大的位置,从而确保内部的量子比特设备与微波光子能够达到最强耦合。在本实用新型的使用过程中,一般使用最低阶的TE101驻波模式,因为该模式电场强度最大处只有一个,即3D微波谐振腔的正中心,从而极大地简化了与本实用新型相关的其他部分的设计。As mentioned above, in the utility model, microwave photons are transmitted in the cuboid space wrapped by the aluminum shell to form a specific standing wave mode. This structure has two advantages: first, the standing wave mode in the cuboid cavity can be easily obtained by solving the boundary conditions of electromagnetic wave transmission, and the error between the actual object and the theoretical simulation is smaller, so the controllability is higher; In the 3D microwave resonator, the distribution of the electric field has a high degree of symmetry, so it is very easy to obtain the position with the highest electric field intensity, thereby ensuring the strongest coupling between the internal qubit device and the microwave photon. During the use of the utility model, the lowest-order TE101 standing wave mode is generally used, because there is only one place with the largest electric field intensity in this mode, that is, the center of the 3D microwave resonant cavity, which greatly simplifies other aspects related to the utility model. part of the design.

并且,在本实用新型中,量子比特设备粘附在电路板的末端,精确地伸到3D腔的正中心。电路板平面穿过3D腔的正中心。缝隙的位置经过详细的模拟,内部的电磁波并不会从缝隙处泄露,同时也不会引入过大的噪声源。And, in the present invention, the qubit device is adhered to the end of the circuit board, protruding precisely to the very center of the 3D cavity. The board plane passes through the very center of the 3D cavity. The position of the gap has been simulated in detail, and the internal electromagnetic waves will not leak from the gap, and at the same time, it will not introduce excessive noise sources.

以上所述的具体实施例,对本实用新型的目的、技术方案和有益效果进行了进一步详细说明,应理解的是,以上所述仅为本实用新型的具体实施例而已,并不用于限制本实用新型,凡在本实用新型的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本实用新型的保护范围之内。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the utility model in detail. It should be understood that the above descriptions are only specific embodiments of the utility model and are not intended to limit the utility model. For new models, any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present utility model shall be included within the protection scope of the present utility model.

Claims (9)

1.一种3D微波谐振腔,包括腔体(1)、电路板(2)、输入端口(3)和输出端口(4),其中,1. A 3D microwave resonant cavity, comprising a cavity (1), a circuit board (2), an input port (3) and an output port (4), wherein, 所述腔体为长方体,包括壳体(11)和壳体内部开出的空腔(12),所述空腔(12)的延伸方向与所述腔体(1)的长度方向一致;The cavity is a cuboid, comprising a casing (11) and a cavity (12) opened inside the casing, and the extension direction of the cavity (12) is consistent with the length direction of the cavity (1); 所述输入端口(3)和输出端口(4)从腔体(1)的上部穿入壳体(11)以与所述空腔(12)连通,腔体从其一个侧面沿着所述空腔的延伸方向朝向空腔开有一个狭槽(13);The input port (3) and the output port (4) penetrate the housing (11) from the upper part of the cavity (1) to communicate with the cavity (12), and the cavity extends along the cavity from one side thereof. A slot (13) is opened toward the cavity in the extending direction of the cavity; 所述电路板(2)包括外接部分(2a)和内插部分(2b),外接部分的宽度较宽,内插部分的宽度较窄且呈长条状,使得电路板整体类似一个“T”形;所述内插部分能够经由所述腔体的狭槽(13)插入腔体的空腔中;且该内插部分包括沿其插入方向延伸的金属引线(21)、位于插入部分末端的量子比特设备安装位(2d)、以及连接该金属引线与量子比特设备安装位的等电位连接线。The circuit board (2) includes an external part (2a) and an internal part (2b), the external part has a wider width, and the internal part has a narrower width and is elongated, so that the circuit board as a whole resembles a "T" shape; the insertion part can be inserted into the cavity of the cavity through the slot (13) of the cavity; and the insertion part includes a metal lead (21) extending along its insertion direction, a A qubit device installation position (2d), and an equipotential connection line connecting the metal lead and the qubit device installation position. 2.如权利要求1所述的3D微波谐振腔,其特征在于,所述腔体(1)由前后两部分组成,两部分结构对称并能通过机械结构结合在一起。2. The 3D microwave resonant cavity according to claim 1, characterized in that, the cavity (1) is composed of two parts, front and rear, and the two parts are symmetrical in structure and can be combined through a mechanical structure. 3.如权利要求1所述的3D微波谐振腔,其特征在于,所述输入端口(3)及输出端口(4)的接入位置对称地分布于所述腔体(1)的上表面。3. The 3D microwave resonant cavity according to claim 1, characterized in that, the access positions of the input port (3) and the output port (4) are symmetrically distributed on the upper surface of the cavity (1). 4.如权利要求1所述的3D微波谐振腔,其特征在于,当所述电路板内插部分(2b)全部插入所述腔体时,所述量子比特设备安装位正好位于所述腔体的空腔(12)的中心。4. The 3D microwave resonant cavity according to claim 1, characterized in that, when the circuit board interpolation part (2b) is fully inserted into the cavity, the installation position of the qubit device is just in the cavity The center of the cavity (12). 5.如权利要求1所述的3D微波谐振腔,其特征在于,所述腔体(1)的外部还具有一个固定部,该固定部位于电路板(2)的一侧并与腔体(1)形成一个整体,当电路板(2)的内插部分(2b)全部插入腔体(1)时,电路板的外接部分可以固定在该固定部。5. 3D microwave resonant cavity as claimed in claim 1, is characterized in that, the outside of described cavity (1) also has a fixed portion, and this fixed portion is positioned at the side of circuit board (2) and is connected with cavity ( 1) Forming a whole body, when all the inserting parts (2b) of the circuit board (2) are inserted into the cavity (1), the external part of the circuit board can be fixed on the fixing part. 6.如权利要求1所述的3D微波谐振腔,其特征在于,所述电路板2的内插部分(2b)的伸入方向与所述输入端口(3)、输出端口(4)的伸入方向垂直。6. The 3D microwave resonant cavity according to claim 1, characterized in that, the insertion direction of the interpolation part (2b) of the circuit board 2 is the same as the extension direction of the input port (3) and the output port (4). The entry direction is vertical. 7.如权利要求1所述的3D微波谐振腔,其特征在于,所述腔体的外壳(11)为纯铝制成。7. The 3D microwave resonant cavity according to claim 1, characterized in that, the casing (11) of the cavity is made of pure aluminum. 8.如权利要求1所述的3D微波谐振腔,其特征在于,所述腔体(1)的空腔(12)位于所述壳体(11)的中心。8. The 3D microwave resonant cavity according to claim 1, characterized in that, the cavity (12) of the cavity (1) is located at the center of the housing (11). 9.如权利要求1所述的3D微波谐振腔,其特征在于,所述电路板(2)为PCB板。9. The 3D microwave resonant cavity according to claim 1, characterized in that, the circuit board (2) is a PCB board.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104752803A (en) * 2015-04-03 2015-07-01 中国科学技术大学 3D (three-dimensional) microwave resonant cavity comprising DC lead structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104752803A (en) * 2015-04-03 2015-07-01 中国科学技术大学 3D (three-dimensional) microwave resonant cavity comprising DC lead structure

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