CN104112897A - Reflection type superconducting transmission line resonant cavity - Google Patents
Reflection type superconducting transmission line resonant cavity Download PDFInfo
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- CN104112897A CN104112897A CN201310138918.8A CN201310138918A CN104112897A CN 104112897 A CN104112897 A CN 104112897A CN 201310138918 A CN201310138918 A CN 201310138918A CN 104112897 A CN104112897 A CN 104112897A
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Abstract
The invention discloses a reflection type superconducting transmission line resonant cavity. The reflection type superconducting transmission line resonant cavity includes a dielectric substrate; the dielectric substrate is provided with two parallel coupling microstrip transmission lines, two toothed coupling capacitors and two microwave access electrodes; one end of each coupling microstrip transmission line is suspended, and the other end of the coupling microstrip transmission line is coupled to one microwave access electrode through one toothed coupling capacitor; and the coupling microstrip transmission lines, the toothed coupling capacitors and the microwave access electrodes are respectively made of aluminum superconducting materials. The reflection type superconducting transmission line resonant cavity of the invention only occupies a small space, and can be integrated on the same substrate together with quantum bits, and therefore, the reflection type superconducting transmission line resonant cavity has excellent integratability; the reflection type superconducting transmission line resonant cavity can be excellent coupled with the quantum bits, so that quantum information exchange can be effectively completed; the reflection type superconducting transmission line resonant cavity can maintain a low-energy few-photon resonant state, so that accurate transmission of quantum information can be ensured; influence of environment noises can be effectively eliminated; adjustment of the Q value of the resonant cavity can be facilitated; and the balance of quantum information maiming ability and exchange ability can be also realized.
Description
Technical field
The present invention relates to a kind of superconducting transmission line resonant cavity, relate in particular to a kind of reflective superconducting transmission line resonant cavity.
Background technology
Semiconductor quantum chip is on the basis of conventional semiconductor industry, makes full use of quantum mechanical effects, realizes the core component of the parallel quantum calculation of high efficiency.Quantum bit, can be quantum dot, can be also the devices such as superconducting quantum interference device (SQUID), is the elementary cell on quantum chip, can store and operate quantum information.But complete quantum computational process, also need to realize coupling and exchanges data between quantum bit, and the detection of quantum information is read.Common electronic circuit cannot transmit quantum information, so we need some special electronic components for we realize this function.Microwave cavity can excite and transmit the microwave photon that can carry quantum information, realizes this function.We wish to obtain and a kind ofly can realize good coupling with quantum bit, there is suitable quality factor, it is Q value, introduce the microwave cavity that noise is less simultaneously, it can and quantum bit between realize the exchange of information, thereby as medium, realize the long-range coupling between quantum bit, also can be used as a kind of effective detector, the information of reading quantum bit simultaneously.
Summary of the invention
The object of the invention is to for above-mentioned the deficiencies in the prior art, a kind of reflective superconducting transmission line resonant cavity that can meet quantum bit detection and the requirement of communicating by letter is each other provided.
For realizing above-mentioned technical purpose, the technical scheme that the present invention takes is: a kind of reflective superconducting transmission line resonant cavity, comprise dielectric substrates, described dielectric substrates is provided with two parallel coupling microstrip transmission lines, two dentation coupling capacitances and two inserting of microwave electrodes; Each coupling microstrip transmission line one end emptying, the other end is coupled to an inserting of microwave electrode by a dentation coupling capacitance; Described coupling microstrip transmission line, dentation coupling capacitance and inserting of microwave electrode are all aluminium superconductor.
As further improved technical scheme of the present invention, described dielectric substrates is semiconductor chip.
As further improved technical scheme of the present invention, described dielectric substrates is for being Si material base or GaAs material base.
As further improved technical scheme of the present invention, the form that two parallel coupling microstrip transmission lines are crooked cabling is arranged on dielectric substrates.
As further improved technical scheme of the present invention, described coupling microstrip transmission line is along direction D bend in one direction, make the projection of coupling microstrip transmission line on direction D continuously and and after the projection of the projection of putting before coupling microstrip transmission line and rear point, do not overlap.
As further improved technical scheme of the present invention, described dielectric substrates is also provided with two direct voltage access electrodes that lay respectively at coupling microstrip transmission line both sides; Described direct voltage access electrode is electrically connected to the coupling microstrip transmission line of homonymy by metal wire; Metal wire and direct voltage access electrode are also aluminium superconductor.
As further improved technical scheme of the present invention, described coupling microstrip transmission line, dentation coupling capacitance, inserting of microwave electrode 4 and metal wire 6 and direct voltage access electrode are arranged on dielectric substrates by semiconductor microactuator nanoprocessing technique.
This reflective superconducting transmission line resonant cavity, is comprised of two parallel coupling microstrip transmission lines, and the bending of their cablings is in order to save space.These two coupling microstrip transmission line one end emptying, the other end is respectively by the gap electric capacity of a pair of dentalation, and dentation coupling capacitance is coupled to inserting of microwave electrode, then is connected with external circuit by bonding wire by inserting of microwave electrode.Two-way power is identical, the difference microwave signal of 180 ° of phase phasic differences is added to respectively inserting of microwave electrode from external circuit and is coupled into this reflective superconducting transmission line resonant cavity, realizes λ/2 resonance.The cavity of whole reflective superconducting transmission line resonant cavity is all used superconductor to make, such as aluminium, niobium, zinc etc. have the material of superconducting characteristic, this reflective superconducting transmission line resonant cavity is except dielectric substrates, other parts are superconductor, described cavity mainly refers to two parallel coupling microstrip transmission lines, described aluminium superconductor is the film that common fine aluminium is plated to, and is not special material; Two metal line that middle part connects can be connected with the external world by bonding wire, can add DC offset voltage.Whole circuit part is by micro-nano processing and fabricating on a dielectric substrates, and dielectric substrates generally adopts Si or GaAs material, and during work, substrate bottom can be attached on the metallic plate of specimen holder as ground plane with elargol.
In the present invention, the metal parts such as dielectric substrates, coupling microstrip transmission line, dentation coupling capacitance, inserting of microwave electrode and metal wire and direct voltage access electrode all adopt aluminium superconductor, under the utmost point low temperature of quantum bit work, present superconducting characteristic, therefore can conduct minimum energy and be unlikely to dissipate very soon because of decay, simultaneously because thermal noise is very little under utmost point low temperature, so the present invention can maintain in this reflective superconducting transmission line resonant cavity, only have the state of several or single photon, thereby transmit exactly required quantum information.
In the present invention, adopted double structure to carry out differential signal transmission, thisly be designed with two advantages: the one, this differential signal is finally exported by differential mode, two end signals are poor, the noise signal of introducing due to environmental impact in transmitting procedure in this reflective superconducting transmission line resonant cavity, can be because be quite eliminated or weaken each other; The 2nd, because concentrating in the dielectric between microstrip line and substrate bottom ground plate, this structure and the resonant cavity electric field of single line compare, electric field spreads get Geng Kai in the plane due to vibration between two coupled microstrip lines, this be extremely conducive to and near quantum bit between coupling.
In the present invention, adopted the gap electric capacity of dentalation, be dentation coupling capacitance and inserting of microwave electrode coupling, by changing the spacing of dentation coupling capacitance and over against the size of area, can change at an easy rate the size of gap electric capacity, thereby effectively change the size of Q value, this compares with the mode that metal wire is directly blocked in general employing, and aspect preparation, controllability is stronger, is conducive to obtain required Q value.
The present invention has adopted semiconductor microactuator nanoprocessing technique of the prior art, by photoetching on substrate, development, plated film, the process such as peel off, obtain this reflective superconducting transmission line resonant cavity, so can the present invention be done very littlely on the whole, adapt to the requirement of quantum chip integration.
In a word, the present invention can meet the application requirements of quantum chip completely, is in particular in: main body of the present invention, refer to that the circuit part except dielectric substrates is planar structure, take up space little, can be integrated on same substrate with quantum bit, have good integration; Double structure of the present invention spreads out resonance electric field in the plane, can finely form coupling with quantum bit, can effectively complete quantum information exchange; Circuit part of the present invention adopts superconductor, makes the present invention can maintain the resonance condition of low-yield few photon, has guaranteed the accurate transmission of quantum information; The present invention adopts double structure to carry out differential signal transmission, by two ends, makes poor mode, has effectively eliminated the impact of ambient noise; The dentation Coupling Design that the present invention adopts, i.e. dentation coupling capacitance, is conducive to adjust the Q value of resonant cavity, takes into account quantum information hold facility and exchange energy equilibrium of forces; The present invention has added DC offset voltage access infrastructure, i.e. direct voltage access electrode, is not having in influential situation high-frequency signal, and the window that can control quantum bit character in experiment is provided.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention
Fig. 2 is the mask blank pattern schematic diagram of preparation in embodiments of the invention 1.
Fig. 3 surveys the application connection diagram of quantum bit information with the present invention.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further.
Embodiment
embodiment 1
Referring to Fig. 1, this reflective superconducting transmission line resonant cavity, comprises dielectric substrates 1, and described dielectric substrates is provided with two parallel coupling microstrip transmission lines 2, two dentation coupling capacitances 3 and two inserting of microwave electrodes 4; Each coupling microstrip transmission line 2 one end emptying, the other end is coupled to an inserting of microwave electrode 4 by a dentation coupling capacitance 3; Described coupling microstrip transmission line 2, dentation coupling capacitance 3 and inserting of microwave electrode 4 are all aluminium superconductor, adopt aluminium superconductor in the present embodiment, and aluminium superconductor is the film that common fine aluminium is plated to, and are not special material.Described dielectric substrates 1 is semiconductor chip, and dielectric substrates described in the present embodiment 1 is Si material base or GaAs material base.Article two, the form that parallel coupling microstrip transmission line 2 is crooked cabling is arranged on dielectric substrates 1, described coupling microstrip transmission line 2 is along direction D bend in one direction, make the projection of coupling microstrip transmission line 2 on direction D continuously and and after the projection of the front point of coupling microstrip transmission line 2 and the projection of rear point, do not overlap, and its projection at X axis crooked as sinusoidal individual event can not overlap in other words, each coupling microstrip transmission line 2 is only crooked to both sides, and can back-flexing, the projection of coupling microstrip transmission line 2 after bending on direction D is that the projection of continuous and front point and the projection of rear point can not overlap like this.On described dielectric substrates, be also provided with two direct voltage access electrodes 5 that lay respectively at coupling microstrip transmission line 2 both sides; Described direct voltage access electrode 5 is electrically connected to the coupling microstrip transmission line 2 of homonymy by metal wire 6; Metal wire 6 and direct voltage access electrode 5 are also aluminium superconductor.Described coupling microstrip transmission line 2, dentation coupling capacitance 3, inserting of microwave electrode 4 and metal wire 6 and direct voltage access electrode 5 are arranged on dielectric substrates 1 by semiconductor microactuator nanoprocessing technique.
The present embodiment 1 is when design, first to select the dielectric substrates of use, then use microwave simulation tool HFSS to simulate the microwave property of this reflective superconducting transmission line resonant cavity, according to the Electromagnetism Characteristics of dielectric substrates, determine the effective wavelength of required resonance frequency, determine the length of coupling microstrip transmission line 2 in this reflective superconducting transmission line resonant cavity, determine the desired live width of 50 Ω impedance matching simultaneously, and made adjustment in the interval of the line-to-line of coupling microstrip transmission line 2.The design of dentation coupling capacitance 3 needs experience by experiment to adjust, and makes the Q value in chamber meet specific experiment requirement.
The processing method of this reflective superconducting transmission line resonant cavity is by the size to fit substrate of well cutting, generally Si or GaAs, also can be other dielectric material, get rid of last layer photoresist, utilize the photolithographic exposure technology corresponding pattern that exposes, mask blank figure as shown in Figure 2, through developing, the photoresist of the correspondence position of the part that has metal to block on mask plate is washed off, the substrate surface of these positions is exposed, and remainder is still had photoresist to block.Then using evaporation coating technology, thermal evaporation, electron beam evaporation all can, on dielectric substrates, there is the aluminium film that plates a layer thickness 200nm-400nm in the one side of photoresist, it can certainly be other metallic film at low temperatures with superconductivity, as niobium, zinc etc., finally in the solvent of photoresist, peel off the photoresist of substrate surface, on it, metal is also stripped from simultaneously, and the part metals staying is circuit part of the present invention.
Except said method, also can take first plated film again the method for etching prepare this reflective superconducting transmission line resonant cavity, first on clean dielectric substrates surface, plate metallic film, and then get rid of photoresist, pattern shown in exposure accompanying drawing 2, but with aforementioned contrary, need to take positive glue exposure, made shield portions photoresist not be developed and remove, and unobstructed part photoresist is removed, immerse again etching reasonable time in the etching agent corresponding with institute metallization, make not have the metal of photoresist shield portions to be etched away, the part not being etched away is like this sample structure of the present invention.
Illustrate occupation mode of the present invention below, the not restriction to this reflective superconducting transmission line resonant cavity protection range of this explanation.
Referring to Fig. 3, for using the schematic diagram of the experiment embodiment that this reflective superconducting transmission line resonant cavity surveys Graphene double quantum point.The microwave signal that amplitude is extremely low is sent by network analyzer output port, through circulator 7, be one-way transmitted to 180 degree annular hybrid networks 8, its effect is the microwave signal of input to be divided into power equates, the two paths of signals of single spin-echo, by bonding wire, connect, be input to respectively again on two inserting of microwave electrodes 4 of this reflective superconducting transmission line resonant cavity, then by dentation coupling capacitance 3, be coupled in this reflective superconducting transmission line resonant cavity.Because the dielectric substrates of this reflective superconducting transmission line resonant cavity is less, so it can be attached on the printed circuit board that is printed on 180 degree annular hybrid networks with elargol, patch location should be made grounding.Microwave signal enters after this reflective superconducting transmission line resonant cavity, the reflected signal producing is again through 180 degree annular hybrid networks 8, the differential mode output signal of two paths of signals is returned from input before, by the unidirectional transmission property of circulator 7, output signal is got back to network analyzer from input port.Network analyzer can provide the situations such as the amplitude, phase place, group delay of the S parameter of whole circuit.Simultaneously, the strength of the end electric field of this reflective superconducting transmission line resonant cavity is processed with a Graphene double quantum point 9, the end of this reflective superconducting transmission line resonant cavity rides on the modulator electrode of graphene quantum dot 9, now this reflective superconducting transmission line resonant cavity and quantum dot are in couple state, exchange message mutually, thereby have influence on the resonance characteristic of this reflective superconducting transmission line resonant cavity, be finally reflected in the S parameter of measuring.That is to say, as the state of the quantum dot of quantum bit, can and extract from the resonance condition reflection of this reflective superconducting transmission line resonant cavity, completed the detection process to quantum bit, whole process can be controlled by computer, reaches the object of a large amount of image data.It should be noted that because this reflective superconducting transmission line resonant cavity rides on quantum dot modulator electrode, so DC interface reserving in the reflective superconducting transmission line resonant cavity of written or printed documents, it is direct voltage access electrode, can add direct voltage, adding of this direct voltage do not affect microwave property, but can play control effect to the state of quantum dot, this namely adds a major reason of DC interface.
According to microwave theory, in this resonant cavity, two ends electric field is the strongest, i.e. antinode, and centre is the most weak, i.e. node, so microwave signal is coupled into resonant cavity from the strength of cabling one end electric field, dentation coupling capacitance position is as far as possible near cabling end; It is in order better to regulate the quality factor in chamber that coupling capacitance is designed to dentalation, it is Q value, it and coupling capacitance C are inverse square relation, reduce over against length or increase gap width, can make C reduce between two teeth, thereby increase Q value, design parameter depends on experiment demand, in addition from preparation technology's angle, more directly block cabling end formation gap electric capacity and more easily control, therefore adopt this kind of structure; Direct current access port is access in the middle of chamber, and resonance electric field is the most weak here, and access direct current lead-in wire is little compared with other position to resonance affects.Two line live widths of coupled microstrip line are consistent, and seam is between the two wide to remain unchanged in whole cabling.
The bending of cabling is just in order to save space, because it is oversize to make rectilinear form, being unfavorable for putting into dilution refrigeration machine measures, therefore crooked shape there is no specific (special) requirements, should not need to illustrate, resonance electric field concentrates between two lines, and the slightly disperse in both sides, need to design arc radius, can not make it too small, thereby cause between two cabling self diverse locations, form and be coupled.Resonant cavity track lengths, is inversely proportional to resonance frequency, therefore this parameter depends on needed resonance frequency, length all can; Dentation coupled structure, tells as front, depends on required Q value size, the same routing line width of two facewidth degree, slightly gap is also harmless, we conventionally make between cog seam wide and live width quite between live width several times, two teeth are several times as much as live width over against length; Routing line width, line break joint are wide, now adopt respectively 9um, 16um, positive and negative 1-2um impact is little, and specific design depends on the requirement that resonance electric field is spread out in the plane to situation, expand on year-on-year basis two parameter values and be also fine, but concrete enforcement preferably simulated again.Exchange access, direct current access port, not too large requirement, the size of square can be carried out bonding wire.
Claims (7)
1. a reflective superconducting transmission line resonant cavity, comprises dielectric substrates (1), and described dielectric substrates (1) is provided with two parallel and crooked coupling microstrip transmission line (2), two dentation coupling capacitances (3) and two inserting of microwave electrodes (4); It is characterized in that: each coupling microstrip transmission line (2) one end emptying, the other end is coupled to an inserting of microwave electrode (4) by a dentation coupling capacitance (3); Described coupling microstrip transmission line (2), dentation coupling capacitance (3) and inserting of microwave electrode (4) are all aluminium superconductor.
2. reflective superconducting transmission line resonant cavity according to claim 1, is characterized in that: described dielectric substrates (1) is semiconductor chip.
3. reflective superconducting transmission line resonant cavity according to claim 2, is characterized in that: described dielectric substrates (1) is Si material base or GaAs material base.
4. reflective superconducting transmission line resonant cavity according to claim 3, is characterized in that: the form that two parallel coupling microstrip transmission lines (2) are crooked cabling is arranged on dielectric substrates (1).
5. reflective superconducting transmission line resonant cavity according to claim 4, it is characterized in that: described coupling microstrip transmission line (2) is along direction D bend in one direction, make the projection of coupling microstrip transmission line (2) on direction D continuously and and after the projection of the front point of coupling microstrip transmission line (2) and the projection of rear point, do not overlap.
6. according to the reflective superconducting transmission line resonant cavity described in claim 1 or 2 or 3 or 4 or 5, it is characterized in that: described dielectric substrates (1) is also provided with two direct voltage access electrodes (5) that lay respectively at coupling microstrip transmission line (2) both sides; Described direct voltage access electrode (5) is electrically connected to the coupling microstrip transmission line (2) of homonymy by metal wire (6); Metal wire (6) and direct voltage access electrode (5) are also aluminium superconductor.
7. reflective superconducting transmission line resonant cavity according to claim 6, is characterized in that: described coupling microstrip transmission line (2), dentation coupling capacitance (3), inserting of microwave electrode (4) and metal wire (6) and direct voltage access electrode (5) are arranged on dielectric substrates (1) by semiconductor microactuator nanoprocessing technique.
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| WO2017055942A1 (en) * | 2015-10-02 | 2017-04-06 | International Business Machines Corporation | Cavity filtered qubit |
| CN106785293A (en) * | 2017-03-20 | 2017-05-31 | 中国科学技术大学 | A kind of superconductive microwave nm harmonic chamber |
| CN107146935A (en) * | 2017-06-22 | 2017-09-08 | 中国科学技术大学 | A kind of quantum circulator based on asymmetric annular chamber |
| CN109196797A (en) * | 2016-06-30 | 2019-01-11 | 国际商业机器公司 | The quantum state of microwave frequency quantum bit is read with optics frequencies of light |
| CN110288092A (en) * | 2019-04-01 | 2019-09-27 | 北京大学 | A kind of the long-life storage device and its storage method of superconductive quantum bit |
| CN110324018A (en) * | 2019-07-25 | 2019-10-11 | 合肥本源量子计算科技有限责任公司 | A kind of microwave signal annular delivery structure |
| CN111239655A (en) * | 2020-01-17 | 2020-06-05 | 扬州大学 | Resonant frequency circuit structure for measuring superconducting characteristics of material |
| CN111541425A (en) * | 2020-04-11 | 2020-08-14 | 复旦大学 | Impedance matching circuit based on coupling transmission line |
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Cited By (13)
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| GB2557828A (en) * | 2015-10-02 | 2018-06-27 | Ibm | Cavity filtered qubit |
| WO2017055942A1 (en) * | 2015-10-02 | 2017-04-06 | International Business Machines Corporation | Cavity filtered qubit |
| CN109196797B (en) * | 2016-06-30 | 2021-05-04 | 国际商业机器公司 | Method and system for readout of quantum states of microwave frequency qubits using optical frequency photons |
| CN109196797A (en) * | 2016-06-30 | 2019-01-11 | 国际商业机器公司 | The quantum state of microwave frequency quantum bit is read with optics frequencies of light |
| CN106785293A (en) * | 2017-03-20 | 2017-05-31 | 中国科学技术大学 | A kind of superconductive microwave nm harmonic chamber |
| CN106785293B (en) * | 2017-03-20 | 2019-01-04 | 中国科学技术大学 | A kind of superconductive microwave nm harmonic chamber |
| CN107146935A (en) * | 2017-06-22 | 2017-09-08 | 中国科学技术大学 | A kind of quantum circulator based on asymmetric annular chamber |
| CN110288092A (en) * | 2019-04-01 | 2019-09-27 | 北京大学 | A kind of the long-life storage device and its storage method of superconductive quantum bit |
| CN110324018A (en) * | 2019-07-25 | 2019-10-11 | 合肥本源量子计算科技有限责任公司 | A kind of microwave signal annular delivery structure |
| CN111239655A (en) * | 2020-01-17 | 2020-06-05 | 扬州大学 | Resonant frequency circuit structure for measuring superconducting characteristics of material |
| CN111239655B (en) * | 2020-01-17 | 2022-05-20 | 扬州大学 | Resonant frequency circuit structure for measuring superconducting characteristics of material |
| CN111541425A (en) * | 2020-04-11 | 2020-08-14 | 复旦大学 | Impedance matching circuit based on coupling transmission line |
| CN111541425B (en) * | 2020-04-11 | 2023-04-07 | 复旦大学 | Impedance matching circuit based on coupling transmission line |
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