CN204455284U - A kind of chemical gas-phase deposition system - Google Patents
A kind of chemical gas-phase deposition system Download PDFInfo
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- CN204455284U CN204455284U CN201520068921.1U CN201520068921U CN204455284U CN 204455284 U CN204455284 U CN 204455284U CN 201520068921 U CN201520068921 U CN 201520068921U CN 204455284 U CN204455284 U CN 204455284U
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Abstract
The utility model provides a kind of chemical gas-phase deposition system, for the upper surface of deposited material in substrate, comprising: an electrode, and the length and width size of described electrode is identical with described substrate, and described substrate is positioned at above described electrode; And some roll wheel assemblies, described roll wheel assembly comprises roller and drive element, described roller is arranged on the side periphery of described electrode, the top of described roller exceeds the upper surface of described electrode, described drive element drives described roller contact or leaves the side of described electrode, and the axis direction of described roller is vertical with the upper surface of described electrode.The utility model, by removing film forming barrier plate, expands substrate area and hides electrode completely, preventing abnormal arc discharge; Further, increase roll wheel assembly carry out between substrate and electrode to bit motion, ensure can not produce skew in film process.
Description
Technical field
The utility model relates to chemical vapour deposition field, particularly relates to a kind of chemical gas-phase deposition system making full use of electrode area.
Background technology
As shown in Figure 1, common enforcement plasma enhanced chemical gas side phase sedimentation (PECVD, Plasma Enhanced Chemical Vapor Deposition) reaction chamber 1 ' in, be provided with the top electrode 2 ' and lower electrode 3 ' that are oppositely arranged, glass substrate 4 ' is slightly less than lower electrode 3 ', and use film forming shutter 5 ' (shadow frame) to fix glass substrate 4 ' on lower electrode 3 ', cause lower electrode 3 ' surface by abnormal arc discharge to prevent glass substrate 4 ' from skew occurring in film process, in addition because the surface anode treatment process of lower electrode 3 ' surrounding and middle part are consistent, after having had film forming shutter 5 ' to block, lower electrode 3 ' surrounding would not by abnormal arc discharge by glass substrate 4 ' shield portions, but, this film forming also directly causing lower electrode 3 ' ensures that district reduces.
As shown in Figure 2, the central authorities of lower electrode 3 ' are not exactly that nonmetal film forming ensures district by the region that film forming shutter 5 ' blocks, and the substrate be on this region can carry out chemical vapour deposition.With 2.5 generation ~ words that calculate of the substrate size in 8.5 generations, the Q region (net region in Fig. 2) that lower electrode 3 ' is blocked accounts for 1.3% ~ 7.8% of the substrate total area, area in the Q region of lower electrode cannot be used for carrying out chemical vapour deposition to substrate, so prior art does not make full use of the effective affecting acreage of lower electrode.
In view of this, a kind of chemical gas-phase deposition system making full use of electrode area is inventor provided.
Utility model content
For defect of the prior art, the purpose of this utility model is to provide a kind of chemical gas-phase deposition system, make full use of electrode area, can not produce under the prerequisite of skew without the need to changing lower electrode area in guarantee film process, just effectively can improve the area that nonmetal film forming ensures district, chemical vapour deposition is carried out to larger substrate.
According to an aspect of the present utility model, provide a kind of chemical gas-phase deposition system, for the upper surface of deposited material in substrate, comprising:
One electrode, the length and width size of described electrode is identical with described substrate, and described substrate is positioned at above described electrode; And
Some roll wheel assemblies, described roll wheel assembly comprises roller and drive element, described roller is arranged on the side periphery of described electrode, the top of described roller exceeds the upper surface of described electrode, described drive element drives described roller contact or leaves the side of described electrode, and the axis direction of described roller is vertical with the upper surface of described electrode.
Preferably, the common contraposition of described roller extrudes four sides of described electrode and substrate, makes described substrate stacked on described electrode.
Preferably, described roller jointly rolls and promotes four sides of described substrate, makes described substrate stacked on described electrode.
Preferably, described electrode is rectangle, and nearest one jiao of roller described in the corner middle distance of described electrode is for closing on angle, and described roller, respectively along the side of described electrode, rolls to away from the described direction closing on angle.
Preferably, described roller is jointly around around described electrode.
Preferably, comprise at least two to described roll wheel assembly, two clamp one group of diagonal angle of described electrode respectively to described roll wheel assembly.
Preferably, also comprise a top electrode, described top electrode is positioned at described surface.
Preferably, described chemical gas-phase deposition system is arranged at a reaction chamber, and the wall of described reaction chamber is provided with some through holes with sealing-ring, and each described drive element is through a described through hole.
Preferably, any one jiao of vertical range to the axis of described roller of described electrode is greater than 10cm.
Preferably, described roller is ceramic rollers.
Chemical gas-phase deposition system of the present utility model, by removing film forming barrier plate, expanding substrate area, making substrate hide electrode completely, prevent abnormal arc discharge; And, increase roll wheel assembly carry out between substrate and electrode to bit motion, ensure can not produce skew in film process and cause electrode surface by abnormal arc discharge, the utility model is made to make full use of electrode area, the nonmetal film forming of effective raising ensures the area in district, carries out chemical vapour deposition to larger substrate.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present utility model will become more obvious:
Fig. 1 is the sectional view of the chemical gas-phase deposition system of prior art;
Fig. 2 is the vertical view of film forming shutter, glass substrate, electrode in the chemical gas-phase deposition system of prior art;
Sectional view when Fig. 3 is thimble carrying substrate in the first chemical gas-phase deposition system of the present utility model;
Sectional view when Fig. 4 is roll wheel assembly clamping substrate and electrode in the first chemical gas-phase deposition system of the present utility model;
Fig. 5 is the vertical view of roll wheel assembly and electrode in Fig. 3;
Fig. 6 is the vertical view of roll wheel assembly clamping substrate and electrode in Fig. 4;
Fig. 7 is the schematic diagram of the first clamping substrate of roll wheel assembly and electrode method in chemical gas-phase deposition system of the present utility model;
Fig. 8 is the schematic diagram of roll wheel assembly the second clamping substrate and electrode method in chemical gas-phase deposition system of the present utility model;
The vertical view of roll wheel assembly and electrode when Fig. 9 is thimble carrying substrate in the second chemical gas-phase deposition system of the present utility model;
Figure 10 is the vertical view of roll wheel assembly clamping substrate and electrode in the second chemical gas-phase deposition system of the present utility model;
The vertical view of roll wheel assembly and electrode when Figure 11 is thimble carrying substrate in the third chemical gas-phase deposition system of the present utility model; And
Figure 12 is the vertical view of roll wheel assembly clamping substrate and electrode in the third chemical gas-phase deposition system of the present utility model.
Reference numeral
1 ' reaction chamber
2 ' top electrode
3 ' lower electrode
4 ' glass substrate
5 ' film forming shutter
6 ' arc discharge area
The region that Q lower electrode is blocked
1 reaction chamber
2 top electrodes
3 lower electrodes
4 substrates
6 arc discharge areas
7 rollers
8 drive elements
9 thimbles
D roller is to the distance of corner
Embodiment
More fully example embodiment is described referring now to accompanying drawing.But example embodiment can be implemented in a variety of forms, and should not be understood to be limited to embodiment set forth herein; On the contrary, these embodiments are provided to make the utility model comprehensively with complete, and the design of example embodiment will be conveyed to those skilled in the art all sidedly.Reference numeral identical in the drawings represents same or similar structure, thus will omit the repeated description to them.
Described feature, structure or characteristic can be combined in one or more embodiment in any suitable manner.In the following description, provide many details thus provide fully understanding embodiment of the present utility model.But one of ordinary skill in the art would recognize that, what do not have in specific detail is one or more, or adopts other method, constituent element, material etc., also can put into practice the technical solution of the utility model.In some cases, known features, material or operation is not shown specifically or describes to avoid fuzzy the utility model.
Accompanying drawing of the present utility model is only for illustrating relative position relation and electrical connection, and the thickness at some position have employed the plotting mode of lavishing praise on oneself so that understand, and the thickness in accompanying drawing does not represent the proportionlity of actual thickness.Upper and lower, left and right used herein, level, be vertically be convenient to describe relative direction take drawing as the non-limiting term that benchmark adopts.
As shown in Figures 3 to 6, the utility model provides a kind of chemical gas-phase deposition system and is arranged at reaction chamber 1, comprises top electrode 2, lower electrode 3 and some groups of roll wheel assemblies.Top electrode 2 and lower electrode 3 are relatively arranged in reaction chamber 1, for the upper surface of deposited material in substrate 4, substrate 4 is positioned at above described lower electrode 3, substrate 4 is positioned at below described top electrode 2, lower electrode 3 supporting substrate 4, some roller 7 assemblies, roller 7 assembly comprises roller 7 and a drive element 8, and roller 7 is arranged on lower electrode 3 around.The top of roller 7 exceeds the upper surface of lower electrode 3, and the part that roller 7 exceeds lower electrode 3 upper surface is used for the side of contact substrate 4.Drive element 8 driving rolls 7 moves in the horizontal direction simultaneously, and contact or leave four sides of lower electrode 3, axis direction and the horizontal plane of roller 7 are perpendicular.
Before chemical gas-phase deposition system starts chemical vapour deposition, substrate 4 is carried by thimble 9 and is entered in reaction chamber 1, be positioned over the upper surface of lower electrode 3, the length and width size of lower electrode 3 is identical with substrate 4, make substrate 4 can hide lower electrode 3, make can cancel film forming shutter in the utility model.Roll wheel assembly comprises the drive element 8 that roller 7 and driving rolls 7 contacted or left substrate 4.The cylindricality of each roller 7 rolls the contacts side surfaces of face and substrate 4, lower electrode 3, and the axis direction of roller 7 is perpendicular to substrate 4 and lower electrode 3.
The wall of reaction chamber 1 is provided with some through hole (not shown)s, and each drive element 8 is through a through hole.Preferably, in order to prevent gas leakage, between through hole and drive element 8, be provided with sealing-ring (not shown).In the present embodiment, this chemical gas-phase deposition system comprises two pair roller assemblies, and two pair roller assemblies clamp one group of diagonal angle of substrate 4, electrode respectively.Roller 7 is ceramic rollers 7 or other rollers that is high temperature resistant, corrosion resistant material, but not as limit.Drive element 8 is telescopic motor or cylinder, and driving rolls 7 clamps or leave substrate 4, roller 7 can be avoided to affect electric field distribution between top electrode 2 and lower electrode 3, thus improve work-ing life of the present utility model.Preferably, in order to ensure the stability clamped, any one jiao of vertical range to the axis of roller 7 of lower electrode 3 is greater than 10cm.Substrate 4 can be glass substrate, but not as limit.
This chemical gas-phase deposition system, by removing film forming barrier plate, expands substrate area, makes substrate 4 hide lower electrode 3, prevent abnormal arc discharge; Further, increase roll wheel assembly carry out between substrate 4 and lower electrode 3 to bit motion, ensure can not produce skew in film process and cause lower electrode 3 surface by abnormal arc discharge.
Roller 7 in chemical gas-phase deposition system of the present utility model can come alignment base plate 4 and lower electrode 3 by two kinds of different rolling forms:
As shown in Figure 7, when substrate 4 is stacked and placed on lower electrode 3, roller 7 extrudes four sides of lower electrode 3 and substrate 4 by common contraposition, makes substrate 4 mutually stacked with lower electrode 3.In this mode, roller 7 can not active rotation, but be subject to the propelling of drive element 8 along a direction, first touch and misfit with lower electrode 3 and exceed the part substrate 4 in lower electrode 3 region, when the side of substrate 4 and direction of propulsion (a direction) non-vertical of drive element 8, when the side of substrate 4 and the side of lower electrode 3 exist, roller 7 can rotate (rotating along b direction) according to the direction on the scarp (side of substrate 4) touched is passive, the squeeze of roll wheel assembly to the side of substrate 4 is converted into revolving force, thus reduce the linear function power of roll wheel assembly to substrate 4, roll wheel assembly is effectively prevented to be caught broken the situation of substrate 4.
As shown in Figure 8, when substrate 4 is stacked and placed on lower electrode 3, roller 7 also jointly can roll and promote four sides of lower electrode 3 and substrate 4, makes substrate 4 mutually stacked with lower electrode 3.In this mode, each roller 7 carries out independently active rotation, but the independent turning direction of each roller 7 will be determined according to its particular location around substrate 4 and lower electrode 3.For lower electrode 3 for rectangle, nearest one jiao (the e angle) of the corner middle distance roller 7 of lower electrode 3 is for closing on angle, then roller 7 is respectively along the side of lower electrode 3, rolls to away from the direction closing on angle (e angle).
Continue reference as 8, specifically, the roller 7 of side, e angle, roll along c direction to the direction away from e angle, and the roller 7 of e angle opposite side, roll along d direction to the direction away from e angle, but the rotating direction of two rollers 7 is contrary, the contrary rolling acting in conjunction of two rollers 7 forms one pulling force, in the process clamping substrate 4 and lower electrode 3, the e angle of substrate 4 is pulled to the corresponding angles of lower electrode 3.This mode weakens the linear function power of roll wheel assembly to substrate 4 by the active rotation of roll wheel assembly to the side of substrate 4, can effectively prevent roll wheel assembly to be caught broken the situation of substrate 4 equally.
Continue with reference to shown in accompanying drawing 3 to Fig. 6, specific operation process of the present utility model is as follows:
As shown in Figure 3 and Figure 5, substrate 4 is transported to reaction chamber 1 by robotic arm, and by the jacking supporting substrate 4 of thimble 9, then along with the decline of thimble 9, substrate 4 moves to lower electrode 3; Now, roller 7 is by the control of drive element 8, and drive element is in contraction schedule, so roller does not clamp (move up and down when avoiding substrate 4 to transport and be in contact with it and clash into).
As shown in Figure 4 and Figure 6, when substrate 4 is positioned on lower electrode 3 (in Fig. 6, substrate 4 and electrode 3 overlap), all drive elements 8 stretch simultaneously and cause many group rollers 7 to move to the position of clamping substrate simultaneously, clamp the surrounding of substrate 4 under the driving of drive element 8 simultaneously, for benchmark, extruding contraposition is carried out to substrate 4 with lower electrode 3, shown in Figure 7 and the associated description of its embodiment, repeats no more herein.Because affecting by high-temperature expansion etc., indivedual roller allows when moving to the position of clamping substrate the gap leaving about 0.5mm between substrate.
Then, chemical vapour deposition is carried out to the substrate 4 on lower electrode 3, between depositional stage, roller 7 remains that with lower electrode 3 be benchmark carries out extruding contraposition state to substrate 4, carries out substrate 4 in process skew occurs and cause lower electrode 3 surface by abnormal arc discharge to prevent chemical vapour deposition.
Finally, after chemical vapor deposition film-formation completes, roller 7 departs from substrate 4 and lower electrode 3 under the contraction of drive element 8, thimble 9 again jack-up process after substrate 4, leave reaction chamber 1 by robotic arm carrying substrate 4.
As shown in Figure 9, Figure 10, the utility model provides another kind of chemical gas-phase deposition system, the difference of the chemical gas-phase deposition system in itself and Fig. 3 to 6 is, this chemical gas-phase deposition system comprises four pair roller assemblies, four pair roller assemblies clamp the corner of substrate 4, lower electrode 3 respectively, thus achieve more stable clamping effect.Other technologies characteristic sum embodiment is consistent with the chemical gas-phase deposition system in Fig. 3 to 6, repeats no more herein.
As shown in Figure 11, Figure 12, the utility model provides another kind of chemical gas-phase deposition system, the difference of the chemical gas-phase deposition system in itself and Fig. 3 to 6 is, this chemical gas-phase deposition system comprises 20 roll wheel assemblies, 20 roll wheel assemblies around the surrounding clamping substrate 4, lower electrode 3, thus achieve highly stable clamping effect.Other technologies characteristic sum embodiment is consistent with the chemical gas-phase deposition system in Fig. 3 to 6, repeats no more herein.
In summary, chemical gas-phase deposition system of the present utility model, by removing film forming barrier plate, expanding substrate area, making substrate hide lower electrode completely, prevent abnormal arc discharge; And, increase roll wheel assembly carry out between substrate and lower electrode to bit motion, ensure can not produce skew in film process and cause lower electrode surface by abnormal arc discharge, the utility model is made to make full use of electrode area, the nonmetal film forming of effective raising ensures the area in district, carries out chemical vapour deposition to larger substrate.
Above specific embodiment of the utility model is described.It is to be appreciated that the utility model is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present utility model.
Claims (10)
1. a chemical gas-phase deposition system, for the upper surface of deposited material in substrate, is characterized in that, comprising:
One electrode, the length and width size of described electrode is identical with described substrate, and described substrate is positioned at above described electrode; And
Some roll wheel assemblies, described roll wheel assembly comprises roller and drive element, described roller is arranged on the side periphery of described electrode, the top of described roller exceeds the upper surface of described electrode, described drive element drives described roller contact or leaves the side of described electrode, and the axis direction of described roller is vertical with the upper surface of described electrode.
2. chemical gas-phase deposition system as claimed in claim 1, it is characterized in that, the common contraposition of described roller extrudes four sides of described electrode and substrate, makes described substrate stacked on described electrode.
3. chemical gas-phase deposition system as claimed in claim 1, is characterized in that, described roller jointly rolls and promotes four sides of described substrate, makes described substrate stacked on described electrode.
4. chemical gas-phase deposition system as claimed in claim 3, it is characterized in that, described electrode is rectangle, and nearest one jiao of roller described in the corner middle distance of described electrode is for closing on angle, described roller, respectively along the side of described electrode, rolls to away from the described direction closing on angle.
5. as the chemical gas-phase deposition system in Claims 1-4 as described in any one, it is characterized in that, described roller is jointly around around described electrode.
6. as the chemical gas-phase deposition system in Claims 1-4 as described in any one, it is characterized in that, comprise at least two to described roll wheel assembly, two clamp one group of diagonal angle of described electrode respectively to described roll wheel assembly.
7. chemical gas-phase deposition system as claimed in claim 1, it is characterized in that, also comprise a top electrode, described top electrode is positioned at described surface.
8. chemical gas-phase deposition system as claimed in claim 1, it is characterized in that, described chemical gas-phase deposition system is arranged at a reaction chamber, and the wall of described reaction chamber is provided with some through holes with sealing-ring, and each described drive element is through a described through hole.
9. chemical gas-phase deposition system as claimed in claim 1, it is characterized in that, any one jiao of vertical range to the axis of described roller of described electrode is greater than 10cm.
10. chemical gas-phase deposition system as claimed in claim 1, it is characterized in that, described roller is ceramic rollers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520068921.1U CN204455284U (en) | 2015-01-30 | 2015-01-30 | A kind of chemical gas-phase deposition system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520068921.1U CN204455284U (en) | 2015-01-30 | 2015-01-30 | A kind of chemical gas-phase deposition system |
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| CN204455284U true CN204455284U (en) | 2015-07-08 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862011A (en) * | 2016-06-14 | 2016-08-17 | 武汉工程大学 | Special baffle device for chemical vapor deposition equipment |
| CN108315721A (en) * | 2018-04-24 | 2018-07-24 | 武汉华星光电技术有限公司 | The method of film forming board and the processing procedure adjustment substrate amount of deflection that forms a film |
| CN110079791A (en) * | 2019-04-25 | 2019-08-02 | 北京捷造光电技术有限公司 | A kind of telescopic rollers transmission structure for PECVD reaction zone |
-
2015
- 2015-01-30 CN CN201520068921.1U patent/CN204455284U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862011A (en) * | 2016-06-14 | 2016-08-17 | 武汉工程大学 | Special baffle device for chemical vapor deposition equipment |
| CN105862011B (en) * | 2016-06-14 | 2018-08-24 | 武汉工程大学 | A kind of chemical vapor depsotition equipment special baffle device |
| CN108315721A (en) * | 2018-04-24 | 2018-07-24 | 武汉华星光电技术有限公司 | The method of film forming board and the processing procedure adjustment substrate amount of deflection that forms a film |
| CN110079791A (en) * | 2019-04-25 | 2019-08-02 | 北京捷造光电技术有限公司 | A kind of telescopic rollers transmission structure for PECVD reaction zone |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: Shanghai Hehui optoelectronic Co., Ltd |
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| CP02 | Change in the address of a patent holder |