CN204442303U - Variable-capacitance element, high-frequency apparatus and communicator - Google Patents
Variable-capacitance element, high-frequency apparatus and communicator Download PDFInfo
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
- G06K7/10—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
- G06K7/10009—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
- G06K7/10237—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves the reader and the record carrier being capable of selectively switching between reader and record carrier appearance, e.g. in near field communication [NFC] devices where the NFC device may function as an RFID reader or as an RFID tag
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
- G06K19/0726—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs the arrangement including a circuit for tuning the resonance frequency of an antenna on the record carrier
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
- G06K19/07771—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card the record carrier comprising means for minimising adverse effects on the data communication capability of the record carrier, e.g. minimising Eddy currents induced in a proximate metal or otherwise electromagnetically interfering object
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H04B5/26—
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- H04B5/77—
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
The utility model relates to variable-capacitance element, high-frequency apparatus and communicator.Ferroelectric capacitor (C1 ~ C6) forms a series circuit, and the first end of this series circuit is connected with port (P11), and the second end is connected with port (P12).Resistance (R31, R32, R33) forms the first resistor voltage divider circuit (RDV1), and resistance (R34, R35) forms the second resistor voltage divider circuit (RDV2).Voltage between the shared tie point (CC1) of resistance (R31, R32, R33) and earth terminal (GND) is applied in as the control voltage for ferroelectric capacitor (C1 ~ C4).In addition, the voltage between the shared tie point (CC2) of resistance (R34, R35) and earth terminal (GND) is applied in as the control voltage for ferroelectric capacitor (C5, C6).
Description
Technical field
The utility model relates to the variable-capacitance element, high-frequency apparatus and the communicator that use in RFID (Radio Frequency Identification: radio-frequency (RF) identification) system, wireless near field communication (NFC:Near Field Communication) system.
Background technology
NFC is one of wireless near field communication standard utilizing 13MHz frequency band, originally expects portable communication terminal to be equipped on various terminal.General in the portable communication terminal utilizing NFC, the RFIC of NFC is built in terminal body, this NFC with RFIC and the same NFC being built in terminal body with aerial coil connect.In addition, above-mentioned aerial coil is connected with capacity cell according in the mode of communication frequency resonance, and this capacity cell and aerial coil form antenna circuit.And this antenna circuit and NFC RFIC etc. form wireless communication module (hereinafter referred to as " NFC module ").
The communication frequency of NFC module predetermines, but due to its service condition, manufacture difference, the resonance frequency of the antenna circuit that should mate is different gradually.Such as in reader/writer mode and mode card as the circuit construction variations of the resonant circuit of antenna circuit.Therefore, in order to maintain the resonance frequency of regulation in any one pattern, need according to the above-mentioned resonant circuit of mode adjustment.In addition, service condition also changes with the lift-launch environment of NFC module.Near NFC module, such as whether there is metal etc. also can make the resonance frequency of antenna circuit change.
When the frequency band of the antenna of NFC module is enough wide, do not need the fine setting of the difference of carrying out for above-mentioned service condition, but the miniaturization along with nearest terminal is difficult to guarantee enough antenna sizes, if antenna size diminishes, enough aerial band field width degree cannot be obtained.Therefore, need resonance frequency to be adjusted to optimum value.
Method of adjustment as resonance frequency is known to utilize and the variable-capacitance element of capacitance variation can be made to form the capacitor (with reference to patent documentation 1) of antenna circuit by applying voltage.In addition, patent documentation 2 discloses and optionally connects multiple capacitor thus the circuit switching overall capacitance.
Figure 12 is the example of the telecommunication circuit described in patent documentation 2.Here, contactless ic portion 47 is by contactless IC chip; There is the antenna shunt capacitor portion of capacitor Cin, shunt capacitor C101 ~ C103, interrupteur SW 1 ~ SW3; And antenna L1 is formed.The electric capacity that capacitor Cin and shunt capacitor C101 ~ C103 has is fixed value.SW1 ~ SW3 is the circuit of the on/off of the connection switching shunt capacitor C101 ~ C103.After contactless ic portion 47 is assembled in mobile phone 1, the controller IC 62 being equipped with nonvolatile memory is connected with contactless ic portion 47.Controller IC 62 switches the ON/OFF state of the interrupteur SW 1 ~ SW3 in contactless ic portion 47.
Patent documentation 1: Japanese Unexamined Patent Publication 2009-290644 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2010-147743 publication
But when possessing variable-capacitance element, commutation circuit, need the space being used for carrying above-mentioned active element in addition, and easily produce deformation owing to being active element, resonance frequency may change.In addition, adjust capacitance by a small margin to switch multiple capacitor, the switch needing a lot of capacitor and switch.Therefore, there is more complicated circuit structure, the size of IC also can become large problem.
In addition, although the structure mechanically being set capacitance by trimmer capacitor can be adopted, in order to make this capacitance variation need mechanical control, so RFID device easily complicated, maximization, in addition, cannot guarantee to tackle the reliability of impacts such as falling.
In addition, when using the variable-capacitance element of the change of the control voltage by applying capacity, in order to generate control voltage, usually resistor voltage divider circuit is formed.But resistor voltage divider circuit is substantially circulation bleeder current and exports the circuit of the drop-out voltage formed by resistance, so produce the power loss because bleeder current causes.Particularly also always produce the power loss because bleeder current causes when capacity being fixed as setting, thus when be applied to battery be the power consumption of power supply low communicator have problems.
Utility model content
The purpose of this utility model be to provide the deformation that can eliminate active element and along with the maximization of the complicated IC size of circuit structure problem, guarantee to tackle the reliability that to fall etc. and impact and the band control voltage realizing power reducing applies the variable-capacitance element of circuit, high-frequency apparatus and communicator.
(1) variable-capacitance element of the present utility model is configured to as follows.
A kind of variable-capacitance element, is characterized in that possessing: ferroelectric capacitor, its electrode for capacitors having ferroelectric film and clip this ferroelectric film, and capacitance changes according to the control voltage value putting on above-mentioned capacitor electrode interpolar; With
Control voltage applies circuit, it has resistor voltage divider circuit, this resistor voltage divider circuit is connected with multiple control terminal (terminal that such as outside GPIO terminal links) respectively by first end, multiple resistive elements that second end is connected with shared tie point are formed, above-mentioned control voltage applies circuit and the voltage of above-mentioned shared tie point is put on above-mentioned ferroelectric capacitor
Above-mentioned resistor voltage divider circuit is made up of the many groups resistor voltage divider circuit sharing tie point separate, and above-mentioned resistor voltage divider circuit becomes direct current nonconducting state by above-mentioned ferroelectric capacitor or other capacitor.
By this structure, do not use active element and switch, so do not have the problem of deformation, and along with the simplification of circuit structure, IC compact in size, easily guarantees to tackle the reliability falling etc. and impact.Further, the bleeder current of resistor voltage divider circuit can be suppressed to flow to or this bleeder current can be made almost nil, so realize low power consumption.
(2) being preferably above-mentioned multiple resistive element is the resistance pattern be arranged on substrate, and above-mentioned resistance pattern is formed as, and the resistance value of above-mentioned multiple resistive element becomes the ratio carrying out the power of 2 as benchmark minimum in their resistance value.
By this structure, the control terminal that quantity is relatively few can be utilized, make the value of control data be linear dependence with the control voltage for variable-capacitance element, easily carry out multistage setting with certain resolution.
(3) be preferably and form above-mentioned variable-capacitance element and above-mentioned control voltage applying circuit by film process on aforesaid substrate, the same layer on aforesaid substrate forms above-mentioned multiple resistive element by same process.
By this structure, components number reduces, and the lead-in wire of data carrying wires is very simple, realizes the small-sized lightness of telecommunication circuit.Further, even if the resistance value entirety deviation to some extent of above-mentioned each resistive element, namely absolute value has deviation, and the ratio between each resistive element is also very stable.Therefore, the voltage ratio of resistor voltage divider circuit is certain, always can apply the stable voltage control of regulation to variable-capacitance element.
(4) the RF resistive element that the two ends that preferably above-mentioned variable-capacitance element comprises multiple and above-mentioned ferroelectric capacitor are connected in parallel, these RF resistive elements are arranged on the layer different from above-mentioned multiple resistive element.
By this structure, the resistive element of RF resistive element and electric resistance partial pressure can be made independent and be set as best resistance value.
(5) high-frequency apparatus of the present utility model is configured to the RFIC that arranges the variable-capacitance element according to any one of (1) ~ (4) at chip and be connected with the above-mentioned control terminal of above-mentioned variable-capacitance element.By this structure, reduce the installation portion number of packages to the circuit substrate in the electronic equipments such as communicator and wiring space, realize miniaturized.
(6) the communicator of the present utility model RFIC that there is aerial coil, the variable-capacitance element be connected with above-mentioned aerial coil and be connected with above-mentioned variable-capacitance element,
Above-mentioned variable-capacitance element possesses: ferroelectric capacitor, its electrode for capacitors having ferroelectric film and clip this ferroelectric film, and capacitance changes according to the control voltage value putting on above-mentioned capacitor electrode interpolar; With
Control voltage applies circuit, it has resistor voltage divider circuit, this resistor voltage divider circuit is connected with multiple control terminal respectively by first end, multiple resistive elements that second end is connected with shared tie point are formed, above-mentioned control voltage applies circuit and the voltage of above-mentioned shared tie point is put on above-mentioned ferroelectric capacitor
Above-mentioned resistor voltage divider circuit is made up of the many groups resistor voltage divider circuit sharing tie point separate, and above-mentioned resistor voltage divider circuit becomes direct current nonconducting state by above-mentioned ferroelectric capacitor or other capacitor,
Above-mentioned variable-capacitance element be set to when waiting with above-mentioned organize the above-mentioned control terminal that at least one resistor voltage divider circuit in resistor voltage divider circuit is connected be all H level or be all the state of the bleeder current that do not circulate of state of L level.
By this structure, do not use active element and switch, so there is no the problem of deformation, and along with the simplification of circuit structure, IC compact in size, easily guarantees to tackle the reliability of impacts such as falling, and, can suppress to flow to the bleeder current of resistor voltage divider circuit or this bleeder current can be made almost nil, so realize low power consumption.
(7) being preferably above-mentioned multiple resistive element is the resistance pattern be arranged on substrate, and above-mentioned resistance pattern is formed as, and the resistance value of above-mentioned multiple resistive element becomes the ratio carrying out the power of 2 as benchmark minimum in their resistance value.
By this structure, the control terminal that quantity is relatively few can be utilized, make the value of control data be linear relationship with the control voltage for variable-capacitance element, easily carry out multistage setting with certain resolution.
(8) be preferably and form above-mentioned variable-capacitance element and above-mentioned control voltage applying circuit by film process on aforesaid substrate, the same layer on aforesaid substrate forms above-mentioned multiple resistive element by same process.
By this structure, components number reduces, and the lead-in wire of data carrying wires is very simple, realizes the small-sized lightness of telecommunication circuit.Further, even if the resistance value entirety deviation to some extent of above-mentioned each resistive element, namely absolute value has deviation, and the ratio between each resistive element is also very stable.Therefore, the voltage ratio of resistor voltage divider circuit is certain, always can apply the stable voltage control of regulation to variable-capacitance element.
(9) the RF resistive element that the two ends that above-mentioned variable-capacitance element comprises multiple and above-mentioned ferroelectric capacitor are connected in parallel, these RF resistive elements are arranged on the layer different from above-mentioned multiple resistive element.
By this structure, the resistive element of RF resistive element and electric resistance partial pressure can be made independent and be set as best resistance value.
(10) be preferably above-mentioned communicator to be configured to arrange at a chip RFIC be connected with the above-mentioned control terminal of above-mentioned variable-capacitance element.By this structure, reduce the installation portion number of packages to the circuit substrate in the electronic equipments such as communicator and wiring space, realize miniaturized.
According to the utility model, as the variable-capacitance element of the resonance frequency for control antenna coil, be used in the ferroelectric capacitor that capacitor electrode interpolar accompanies ferroelectric film, and apply circuit as the control voltage being used for applying this ferroelectric capacitor control voltage, use multiple resistive elements with different resistance values, so no matter whether small-sized can both being difficult to produces deformation, variable-capacitance element and high-frequency apparatus that the high band control voltage of the stable reliability of frequency characteristic applies circuit can be realized.In addition, do not need to use needs the variable-capacitance element of Mechanical course as trimmer capacitor, so no matter whether small-sized, can both realize tackling the variable-capacitance element and high-frequency apparatus that fall the band control voltage applying circuit waiting the reliability of impact high.And, realize suppressing the bleeder current flowing to resistor voltage divider circuit or the low power consumption making this bleeder current almost nil.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the entirety of the inside of the variable-capacitance element 101 of the first execution mode.
Fig. 2 represents that bleeder current does not flow to the figure of the state of the variable-capacitance element 101 of the first execution mode.
Fig. 3 is the figure representing the applying voltage steps represented by the binary signal of 5 bits and the relation of volume-variable ratio inputted to control terminal P21 ~ P25.
Fig. 4 is the cutaway view of the main portions of variable-capacitance element 101.
Fig. 5 is the circuit diagram of the variable-capacitance element 102 of the second execution mode.
Fig. 6 possesses the circuit diagram that band control voltage of the present utility model applies the variable-capacitance element of circuit and the communicator 201 of high-frequency apparatus.
Fig. 7 is the three-view diagram of the built-in RFIC110 of variable-capacitance element.
Fig. 8 uses circuit board 20 to be equipped with the cutaway view of the state of the built-in RFIC110 of variable-capacitance element in installation again.
Fig. 9 is the circuit diagram of the communicator of the 4th execution mode.
Figure 10 is the circuit diagram of the variable-capacitance element of the comparative example of variable-capacitance element as the first execution mode.
Figure 11 is the current potential of the control terminal P21 ~ P25 representing the variable-capacitance element shown in Figure 10 and flows to the figure of bleeder current of resistor voltage divider circuit.
Figure 12 is the example of the telecommunication circuit described in patent documentation 2.
Embodiment
" the first execution mode "
Fig. 1 is the circuit diagram of the entirety of the inside of the variable-capacitance element 101 of the first execution mode.Variable-capacitance element 101 comprises ferroelectric capacitor C1 ~ C6 and applies the control voltage applying circuit of control voltage to above-mentioned ferroelectric capacitor C1 ~ C6.Ferroelectric capacitor C1 ~ C6 forms a series circuit, and the first end of this series circuit is connected with port P11, and the second end is connected with port P12.This variable-capacitance element 101 is the elements of the capacitance variation made between port P11 and port P12.
The voltage be applied between shared tie point CC1 and earth terminal GND is the control voltage for ferroelectric capacitor C1 ~ C4.In addition, the voltage be applied between shared tie point CC2 and earth terminal GND is the control voltage for ferroelectric capacitor C5, C6.
Resistive element (hreinafter referred to as " resistance ") R31 ~ R35 of RF resistive element (hreinafter referred to as " resistance ") R0, R11 ~ R14, R21 ~ R23 and electric resistance partial pressure forms above-mentioned control voltage and applies circuit.Control voltage is applied to ferroelectric capacitor C1 ~ C6 via resistance R11, R12, R13, the R14 in control voltage applying circuit and resistance R21, R22, R23.The resistance value of resistance R11 ~ R14, R21 ~ R23 is equal.Above-mentioned resistance R0, R11 ~ R14, R21 ~ R23 applies control voltage to ferroelectric capacitor C1 ~ C6, and suppresses to be applied in RF signal between the port P11-P12 bleeder to shared tie point CC1, CC2 and earth terminal GND.
Resistance R31, R32, R33 form the first resistor voltage divider circuit RDV1, and resistance R34, R35 form the second resistor voltage divider circuit RDV2.The first end of resistance R31, R32, R33 is connected with control terminal P21, P22, P23 respectively.Second end of above-mentioned resistance R31, R32, R33 is connected with shared tie point CC1.The first end of resistance R34, R35 is connected with control terminal P24, P25 respectively.In addition, second end of above-mentioned resistance R34, R35 is connected with shared tie point CC2.
Like this, for the first resistor voltage divider circuit RDV1 and the second resistor voltage divider circuit RDV2, share tie point CC1, CC2 separate.That is, the first resistor voltage divider circuit RDV1 and the second resistor voltage divider circuit RDV2 by the ferroelectric capacitor C2 ~ C5 in multiple ferroelectric capacitor D.C. isolation.
The voltage (binary signals of 5 bits) of high potential (hereinafter referred to as " H level ") or electronegative potential (hereinafter referred to as " L level ") is applied externally to control terminal P21 ~ P25.According to the applying voltage putting on control terminal P21, P22, P23, produce the branch pressure voltage formed by the first resistor voltage divider circuit RDV1 at shared tie point CC1.In addition, according to the applying voltage putting on control terminal P24, P25, produce the branch pressure voltage formed by the second resistor voltage divider circuit RDV2 at shared tie point CC2.
First resistor voltage divider circuit RDV1 and ferroelectric capacitor C1, C2, C3, C4 belong to first group of G1.Second resistor voltage divider circuit RDV2 and ferroelectric capacitor C5, C6 belong to second group of G2.
According to the applying voltage putting on control terminal P21, P22, P23, determine the capacitance of the ferroelectric capacitor C1 ~ C4 of first group of G1, according to the applying voltage putting on control terminal P24, P25, determine the capacitance of ferroelectric capacitor C4, C5 of second group of G2.And the capacitance between port P11-P12 is the value of the series connection joint capacity of ferroelectric capacitor C1 ~ C6.
Fig. 2 represents that bleeder current does not flow to the figure of the state of the variable-capacitance element 101 of the first execution mode.As shown in Fig. 2 (A), (C), if the current potential of control terminal P21, P22, P23 is H level, then there is no the discrepancy of electric current between control terminal P21, P22, P23.As shown in Fig. 2 (B), (D), when the current potential of control terminal P21, P22, P23 is L level, between control terminal P21, P22, P23, there is no the discrepancy of electric current yet.In addition, as shown in Fig. 2 (A), (D), if the current potential of control terminal P24, P25 is H level, then there is no the discrepancy of electric current between control terminal P24, P25.As shown in Fig. 2 (B), (C), when the current potential of control terminal P24, P25 is L level, between control terminal P24, P25, there is no the discrepancy of electric current yet.
Like this, if be all H level for the binary signal of first group of G1 or be all L level, and be all H level for the binary signal of second group of G2 or be all L level, then bleeder current does not circulate.
Here, the circuit diagram of the variable-capacitance element as comparative example is shown at Figure 10.In this embodiment, possess the resistor voltage divider circuit formed by resistance R31 ~ R35, one end of resistance R21, R22, R23 is connected to the shared tie point CC of resistor voltage divider circuit via resistance R4.Other structure is identical with the variable-capacitance element 101 of the first execution mode.
Figure 11 is the current potential of the control terminal P21 ~ P25 representing the variable-capacitance element shown in Figure 10 and flows to the figure of bleeder current of resistor voltage divider circuit.Like this, if control terminal P21 is H level, control terminal P22 ~ P25 is L level, then the circuit that the parallel circuits forming resistance R32 ~ R35 is connected with resistance R31, and bleeder current circulates, and produces branch pressure voltage at shared tie point CC.
Fig. 3 is the figure representing the applying voltage steps represented by the binary signal of 5 bits and the relation of volume-variable ratio inputted to above-mentioned control terminal P21 ~ P25.Here, condition (1) (2) (3) (4) of resistance value ratio and capacity ratio are as described below.
[condition (1)]
Variable-capacitance element: Fig. 1 (the first execution mode)
R31：R32：R33：R34：R35＝1：2：4：1：2
The capacity of first group: the capacity=1:1 of second group
[condition (2)]
Variable-capacitance element: Fig. 1 (the first execution mode)
R31：R32：R33：R34：R35＝1：2：4：1：2
The capacity of first group: the capacity=0.89:1.33 of second group
[condition (3)]
Variable-capacitance element: Fig. 1 (the first execution mode)
R31：R32：R33：R34：R35＝1：1.2：1.4：1：2
The capacity of first group: the capacity=0.89:1.33 of second group
[condition (4)]
Variable-capacitance element: Figure 10 (comparative example)
R31：R32：R33：R34：R35＝1：2：4：8：16
The capacity of first group: the capacity=1:1 of second group
In figure 3, corresponding when step 1 and control terminal P21 ~ P25 whole are L level, corresponding when step 32 and control terminal P21 ~ P25 whole are H level.The change ratio that " volume-variable ratio " is is benchmark with capacity during step 1.
Like this, the resistance value of resistance R31 ~ R35 is with minimum for benchmark in these resistance value, power with 2 or almost 2 the ratio of power specify, above-mentioned electric resistance partial pressure is than taking the value identical with 5 power (=32) of 2 according to the high level of control terminal P21 ~ P25 and low level combination thus.
Ferroelectric capacitor C1 ~ C6 possess along with apply voltage become large and volume change than becoming large non-linear.Therefore, as condition (4), when can the circuit structure of the linear size of switching controls voltage, the capacitance-voltage characteristic former state of ferroelectric capacitor itself presents.Namely the volume-variable width (sensitivity) of each step is different, so be difficult to trimmer value.
On the other hand, even if use identical ferroelectric capacitor, as condition (1), by arranging first group and second group (resistor voltage divider circuit being divided into two), thus compare with condition (4), also can improve the linear of volume-variable ratio.Wherein, the volume change between step 6-7, between step 16-17, between step 21-22 is than slightly large between other step.
As condition (2), (3), if change the Capacity Ratio of the ferroelectric capacitor of each group, then can eliminate the step that the volume change of local generation is large.In addition, as condition (3), if make resistance value optimization further, then can make volume change approximate equality in whole steps.
Fig. 4 is the cutaway view of the main portions of variable-capacitance element 101.In the diagram, substrate SI is that surface is formed with SiO
2the Si substrate of film.This substrate SI is formed with ferroelectric film and Pt film by the sequence alternate of ferroelectric film FS1, electrode for capacitors PT1, ferroelectric film FS2, electrode for capacitors PT2, ferroelectric film FS3 and forms capacitor unit.
Moisture-proof diaphragm PC1 is coated with on the top of the stacked film of above-mentioned ferroelectric film FS1, FS2, FS3 and electrode for capacitors PT1, PT2.Organic protective film PC2 is also formed on the top of this moisture-proof diaphragm PC1.
Wiring membrane TI1 is formed on the top of organic protective film PC2.In addition, this wiring membrane TI1 is connected via the assigned position of contact hole with electrode for capacitors PT1, PT2.Further, wiring membrane TI1 is formed to cover around moisture-proof diaphragm PC1 and organic protective film PC2.
Interlayer dielectric SR1 is formed on the surface of wiring membrane TI1.Resistive film pattern RE1 is formed on the surface of this interlayer dielectric SR1.The surface of this resistive film pattern RE1 is covered by interlayer dielectric SR2, is formed with resistive film pattern RE2 on the surface of this interlayer dielectric SR2.The surface of this resistive film pattern RE2 is covered by interlayer dielectric SR3.
The resistive film of above-mentioned resistive film pattern RE1, RE2 is formed by film process (photoetching and utilize the process of etching technique) or thick film process (utilizing the process of the printing technologies such as screen painting).The resistance value of each resistive element is determined by the width of resistive film pattern, length and thickness.
Wiring membrane TI2 is formed on the surface of interlayer dielectric SR3.In addition, this wiring membrane TI2 is connected with wiring membrane TI1 via the contact hole being formed at interlayer dielectric SR1, SR2, SR3.
Soldering-resistance layer SR4 is had in the surface coverage of interlayer dielectric SR3.And, this soldering-resistance layer SR4 opening and be formed with external connecting electrode EE on the surface of wiring membrane TI2.
Above-mentioned ferroelectric film FS1 is the dielectric film be close to use, prevented diffusion for substrate SI and moisture-proof diaphragm PC1.In addition, ferroelectric film FS3 is the dielectric film be close to for moisture-proof diaphragm PC1.As the conductive material for above-mentioned electrode for capacitors PT1, PT2, good conductivity can be used and the excellent dystectic precious metal material of oxidative resistance, such as Pt, Au.
In addition, as the thin-film material for above-mentioned ferroelectric film FS1, FS2, FS3, use the dielectric substance with high-k.Specifically, (Ba, Sr) TiO can be used
3(BST), SrTiO
3, BaTiO
3, Pb (Zr, Ti) O
3deng perovskite compound, SrBi
4ti
4o
15deng bismuth layer-like compound etc.
In addition, wiring membrane TI1, TI2 are made up of Ti/Cu/Ti these three layers, and Ti layer is such as formed as 100nm, and Cu layer is such as formed as 1000nm.
In addition, by Au/Ni, this is two-layerly formed external connecting electrode EE, and the Ni layer of ground floor is such as formed as 2000nm, and the Au layer of the second layer is such as formed as 200nm.
Above-mentioned moisture-proof diaphragm PC1 prevents the moisture discharged from organic protective film PC2 from immersing capacitor unit.As this moisture-proof diaphragm PC1, SiNx, SiO can be used
2, Al
2o
3, TiO
2deng.In addition, organic protective film PC2 absorbs the mechanical stress from outside.As this organic protective film PC2, PBO (polyphenyl also) resin, polyimide resin, epoxy resin etc. can be used.
The resistance material of above-mentioned resistive film pattern RE1, RE2 is such as nichrome.
The manufacture method of the variable-capacitance element 101 shown in Fig. 4 is as described below.
First, implement thermal oxidation to Si substrate, being formed by thickness is the SiO of 700nm
2the oxide skin(coating) formed.As long as the thickness of this oxide skin(coating) can guarantee that the thickness of desired insulating properties is not particularly limited, be preferably set in the scope of 500 ~ 1000nm.
Then, (Chemical Solution Deposition is piled up by chemical solution; Hereinafter referred to as " CSD ".) method formed on above-mentioned oxide skin(coating) thickness be 50nm be close to use, prevent spread ferroelectric film FS1.As long as the thickness of this ferroelectric film FS1 can guarantee desired close property, prevent diffusible thickness to be not particularly limited, be preferably set in the scope of 10 ~ 100nm.
The material that can use as ferroelectric film FS1 has above-mentioned several, but preferably identical with the ferroelectric film FS2 of capacitor material.Such as, in formation bst film situation, Ba, Sr, Ti is prepared according to molar ratio as the film forming raw material solution coordinated for Ba:Sr:Ti=7:3:10.Then, this film forming raw material solution is coated on oxide skin(coating) 1, dry on the hot plate of 400 DEG C, and at the temperature of 600 DEG C, carry out heat treatment in 30 minutes and crystallization, thus form bst film.
Be not particularly limited as long as the temperature of above-mentioned hot plate can obtain desired drying property, be preferably set in the scope of 300 ~ 400 DEG C.In addition, be not particularly limited as long as above-mentioned heat treated temperature can carry out desired crystallization, be preferably set in the scope of 600 ~ 700 DEG C.In addition, be not particularly limited as long as the above-mentioned heat treated time can carry out desired crystallization, be preferably set in the scope of 10 ~ 60 minutes.
Next, electrode for capacitors PT1, ferroelectric film FS2, electrode for capacitors PT2, ferroelectric film FS3 film forming is made successively.Specifically, the electrode for capacitors PT1 that Pt, Au of being 250nm by thickness by the formation of RF magnetron sputtering method are formed, then, the ferroelectric film FS2 that the thickness be made up of BST etc. is 100nm is formed by CSD method, then, the electrode for capacitors PT2 that Pt, Au of being 250nm by the formation of RF magnetron sputtering method by thickness are formed.Further, the ferroelectric film FS3 of the thickness 100nm be made up of BST etc. is formed by CSD method.
As long as the thickness of above-mentioned electrode for capacitors PT1, PT2 can guarantee that the thickness of desired low resistive is not particularly limited, be preferably set in the scope of 100 ~ 500nm.In addition, as long as the thickness of above-mentioned ferroelectric film FS2 can guarantee that the thickness of desired electrostatic capacitance is not particularly limited, be preferably set in the scope of 80 ~ 150nm.In addition, as long as the thickness of above-mentioned ferroelectric film FS3 can guarantee that the thickness of desired close property is not particularly limited, be preferably set in the scope of 80 ~ 150nm.
Next, by photoetching technique and dry etching method (reactive ion etching (RIE) method), that carries out each layer of capacitor unit portrays pattern.That is, after photoresist carries out prebake in coating, via photomask to photoresist irradiating ultraviolet light, carry out exposing, develop, post bake, optical mask pattern is transferred as Resist patterns.Then, Ar gas, CHF is used
3gas, carries out dry-etching to exposed portion.
And, thereafter, at the temperature of 800 DEG C, heat treatment in 30 minutes is carried out to this capacitor unit.Be not particularly limited as long as this heat treated temperature can obtain desired heat treatment characteristic, be preferably set in the scope of the temperature of 800 ~ 900 DEG C.In addition, be not particularly limited as long as this heat treated time can obtain desired heat treatment characteristic, be preferably set in the scope of 10 ~ 60 minutes.
Next; in the mode of the side of the upper surface in covering capacitor portion and side and ferroelectric film FS1; the moisture-proof diaphragm PC1 that the inorganic material being 600nm by thickness by sputtering method formation is formed; then; PBO (polyphenyl also) film as photoresist material is applied in the mode covering above-mentioned moisture-proof diaphragm PC1 by spin-coating method; then; heat 5 minutes at the temperature of 125 DEG C; carrying out exposing, after development treatment; at 350 DEG C, heat 1 hours, form the organic protective film PC2 that thickness is the predetermined pattern of 6000nm.
As long as the thickness of above-mentioned moisture-proof diaphragm PC1 can guarantee that the thickness of desired moisture-proof protectiveness is not particularly limited, be preferably set in the scope of 200 ~ 1000nm.In addition, as long as the thickness of above-mentioned organic protective film PC2 can guarantee that the absorbefacient thickness of desired mechanical stress is not particularly limited, be preferably set in the scope of 2000 ~ 10000nm.
Next, using organic protective film PC2 as mask, use CHF
3gas carries out dry-etching to organic protective film PC2, moisture-proof diaphragm PC1 and ferroelectric film FS2 and forms pattern; form the contact hole (not shown) arriving electrode for capacitors PT1; and organic protective film PC2, moisture-proof diaphragm PC1 and ferroelectric film FS3 are carried out to dry-etching and form pattern, forms the contact hole arriving electrode for capacitors PT2.
Next, by RF magnetron sputtering method, make the metal level film forming of 3 layers that become wiring membrane TI1, by Wet-type etching, this wiring membrane TI1 is portrayed pattern.
Next, spin coating is carried out to interlayer dielectric SR1, form contact hole.In addition, made the resistive film film forming of the resistive element 14B that become variable-capacitance element portion by film process such as sputtering, electron beam evaporation platings, by stripping method, this resistive film is portrayed pattern thus formation resistive film pattern RE1.
Next, spin coating is carried out to interlayer dielectric SR2, form contact hole in the position overlapped with the contact hole of interlayer dielectric SR1.In addition, make become the resistive film film forming that control voltage applies circuit 14R by film process such as sputtering, electron beam evaporation platings, by stripping method, this resistive film is portrayed pattern thus formation resistive film pattern RE2.
Next, spin coating is carried out to interlayer dielectric SR3, form contact hole in the position overlapped with the contact hole of interlayer dielectric SR2.
And, carry out film forming by following step and portray pattern.
Made the conductor of the inside of contact hole by RF magnetron sputtering method and the metal level film forming of 3 layers of wiring membrane TI2 should be become.
The metal level that become external connecting electrode EE is formed by galvanoplastic.
Lithographically and wet etching above-mentioned metal level is portrayed pattern.
Soldering-resistance layer SR4 is formed by spin-coating method.
Lithographically and wet etching soldering-resistance layer SR4 is portrayed pattern.
Like this, use ferroelectric capacitor as variable-capacitance element, multiple resistance patterns with different resistance values are used to apply circuit as control voltage, so the small-sized and inactive component that frequency characteristic is excellent (=band control voltage applies the variable-capacitance element of circuit) can be formed.
In addition, the utility model is not limited to above-mentioned execution mode.Such as, the thickness, formation method, formation condition etc. of each layer described are in the above-described embodiment only illustration, as film capacitor, can change arbitrarily in the scope not destroying desired function.
In addition, in above-mentioned execution mode, situation capacitor unit to the monolayer constructions will of a capacity generating unit is illustrated, but certainly also can be equally applicable to the situation of the multi-ply construction with plural capacity generating unit.
As shown in Figure 4, variable-capacitance element and control voltage applying circuit are formed on semiconductor substrate by film process.That is, variable-capacitance element portion and control voltage apply circuit part and are integrally formed in shared substrate.The multiple resistive elements particularly forming control voltage applying circuit are arranged at same layer respectively by same process.Therefore, even if the resistance value of each resistive element departs from desired resistance value, the deviation of the ratio of each resistance value itself also can be suppressed, therefore, it is possible to control output voltage with good reproducibility.On the other hand, multiple RF resistive elements that the two ends that variable-capacitance element is included in each ferroelectric capacitor are connected in parallel, but above-mentioned RF resistive element from form the layer that control voltage applies multiple resistance patterns of circuit different and arrange, above-mentioned RF resistive element is arranged at same layer by same process.
In addition, in above shown example, the situation that the resistance value of resistance R11 ~ R14, R21 ~ R23 is equal is used, if but be enough large resistance value relative to the impedance of ferroelectric capacitor C1 ~ C6, then resistance value also can be unequal.
" the second execution mode "
Fig. 5 is the circuit diagram of the variable-capacitance element 102 of the second execution mode.Variable-capacitance element 102 comprises ferroelectric capacitor C1 ~ C6 and above-mentioned ferroelectric capacitor C1 ~ C6 is applied to the control voltage applying circuit of control voltage.Different from the variable-capacitance element shown in Fig. 1, between the series circuit and port P11 of ferroelectric capacitor C1 ~ C6, be connected with capacitor C0, between the series circuit and port P12 of ferroelectric capacitor C1 ~ C6, be connected with capacitor C7.In addition, annexation ferroelectric capacitor C1 ~ C6 being applied to resistance R0, R11 ~ R13, R21 ~ R24 of control voltage is different from Fig. 1.
In the example as shown in fig. 5, the branch pressure voltage formed by resistor voltage divider circuit RDV1 is applied in ferroelectric capacitor C1 ~ C3, and the branch pressure voltage formed by resistor voltage divider circuit RDV2 is applied in ferroelectric capacitor C4 ~ C6.Other structure is identical with the first execution mode.
In Figure 5, capacitor C0, C7 block electricity container as direct current and play a role, and can suppress the impact on the element be connected with port P11, P12, circuit.When port P11, P12 are such as connected with aerial coil, the series circuit of resistance R11, R13 is not connected in parallel relative to aerial coil.Therefore, variable-capacitance element 102 pairs of antenna performances do not have negative effect.In addition, the capacity between port P11, P12 and aerial coil can be utilized to form LC resonant circuit.And, control terminal P21, P22, P23 be all H level or L level and control terminal P24, P25 be all H level or L level time, under the state namely do not circulated in bleeder current, the capacity between port P11, P12 can be made to keep certain.
In addition, capacitor C0, C7 also can be ferroelectric capacitors.Wherein, control voltage is not applied, so capacitance is certain to capacitor C0, C7.
Identical with described in the first embodiment, if the resistance value of the resistance R11 ~ R13 of Fig. 5, R21 ~ R24 is the resistance value enough large relative to the impedance of ferroelectric capacitor C1 ~ C6, also can be unequal.
" the 3rd execution mode "
Fig. 6 possesses the circuit diagram that band control voltage of the present utility model applies the variable-capacitance element of circuit and the communicator 201 of high-frequency apparatus.This communicator 201 is examples for NFC module.Communicator 201 possesses RFIC11, control IC12, aerial coil 13 and variable-capacitance element 102.The built-in RFIC110 of variable-capacitance element is formed by variable-capacitance element 102 and RFIC11.Here, variable-capacitance element 102 is variable-capacitance elements shown in this second embodiment.The circuit be made up of the built-in RFIC110 of variable-capacitance element and aerial coil 13 is equivalent to " high-frequency apparatus " of the present utility model.
RFIC11 possesses the IO terminal 11P of GPIO (General Purpose Input/Output).Equally, control IC12 possesses the IO terminal 12P of GPIO.
RFIC11 carries out the conversion between baseband signal and high-frequency signal.This control IC12 control RFIC11, input and output comprise the data of communication data.
Two RX terminals (Received signal strength terminal) of RFIC11 are connected with the parallel circuits of variable-capacitance element 102 and aerial coil 13.Variable-capacitance element 102 as shown in Figure 5.
The IO terminal 11P of RFIC11 and the IO terminal 12P of control IC12 is connected by holding wire 15A, and the control terminal P21 ~ P25 of variable-capacitance element 102 is connected by holding wire 15A, 15B.
RFIC11 and control IC12 carries out the input and output of signal of communication via data carrying wires 16.The various settings that control IC12 carries out RFIC11 via holding wire 15A wait control.In addition, RFIC11 or control IC12 sends control data via holding wire 15A, 15B to variable-capacitance element 102.
Variable-capacitance element 102 forms LC antiresonant circuit and antenna circuit together with aerial coil 13, and the resonance frequency of antenna circuit is set as assigned frequency.Aerial coil 13 and the antenna of communication object carry out electromagnetic field and are combined thus carry out the receiving and transmitting signal for short-range communication.
Fig. 7 is the three-view diagram of the built-in RFIC110 of variable-capacitance element.The built-in RFIC110 of this variable-capacitance element as shown in Figure 4, is the bare chip separated from wafer.Soldered ball SB is formed at external connecting electrode (pad) EE of this IC.
Fig. 8 uses circuit board 20 to be equipped with the cutaway view of the state of the built-in RFIC110 of variable-capacitance element in installation again.Use again the lower surface of circuit board 20 to be formed with installation terminal 22 in installation, be formed with the electrode carrying the built-in RFIC110 of variable-capacitance element at upper surface.And, use again the inside of circuit board 20 to be formed with wiring electrode 21 again in installation.Be formed with aerial coil 13 (with reference to Fig. 6) at this substrate 20, at this substrate 20, the built-in RFIC110 of variable-capacitance element be installed thus form high-frequency apparatus.
Like this, the module using again circuit board 20 to be equipped with the state of the built-in RFIC110 of variable-capacitance element in installation can be installed on printed wiring board.
" the 4th execution mode "
Fig. 9 is the circuit diagram of the communicator of the 4th execution mode.In this embodiment, the circuit be connected with two of RFIC11 TX terminals (transmission signal terminal) is also shown.In fig .9, between baseband circuit 18 and RFIC11, carry out the communication of baseband signal.Aerial coil 13, by being combined with the magnetic field of communication object lateral coil antenna, changes communication object side antenna and wireless signal.Ring electrode pattern winding multi-turn or multilayer are formed by this aerial coil 13.
Capacitor C21, C22 are the elements of the conjugation for adjusting RFIC11 and aerial coil 13.In addition, inductor L11, L12 and capacitor C11, C12, C20 form transmitting filter.Such as when telecommunication circuit is with mode card action, RFIC11 carries out passive action, so by towards RX terminal input signal generating power voltages and read Received signal strength, send time pair circuit (load) be connected with TX terminal carry out load modulation.In addition, such as, when telecommunication circuit is with reader/writer mode action, RFIC11 carries out active action, so making when sending RX terminal open, launching send signal from TX terminal, making TX terminal open when receiving, from RX terminal input Received signal strength.Like this, in telecommunication circuit, correspond to pattern, observe the impedance variation of aerial coil 13 side from RFIC11.Make the resonance frequency of antenna circuit for best corresponding to this pattern, (to integrate the mode of the impedance observing aerial coil 13 side from RFIC11) controls variable-capacitance element 102.
In addition, at the two ends of aerial coil 13, between ground, ESD protection device 17A, 17B is connected to.
Baseband circuit 18 (reception standby mode) resistor voltage divider circuit be formed in variable-capacitance element 102 when waiting does not circulate the condition of bleeder current.That is, wait with the frequency forming this condition.Thereby, it is possible to reduce power consumption when waiting.
" other execution mode "
Above, describe the utility model for concrete execution mode, but the utility model does not limit this example.
Such as, the resistor voltage divider circuit sharing tie point separate is not limited to two, also can possess more than three.
In addition, the shared tie point of multiple resistor voltage divider circuit can become direct current nonconducting state by ferroelectric capacitor or other capacitor, also can be mixed with ferroelectric capacitor and other capacitor in the multiple capacitors be connected in series.
In addition, variable-capacitance element can be connected in parallel separately with aerial coil, but also in series can insert capacitor relative to variable-capacitance element.In addition, also can be connected in series relative to aerial coil.
In addition, high-frequency apparatus of the present utility model is not limited to the read write line of RFID, also can be configured to RFID label tag.
The explanation of Reference numeral
C1 ~ C6 ... ferroelectric capacitor; C0, C7 ... capacitor; C11, C12, C20, C21, C22 ... capacitor; CC1, CC2 ... share tie point; EE ... external connecting electrode; FS1, FS2, FS3 ... ferroelectric film; G1 ... first group; G2 ... second group; GND ... earth terminal; L11, L12 ... inductor; P11, P12 ... port; P21 ~ P25 ... control terminal; PC1 ... moisture-proof diaphragm; PC2 ... organic protective film; PT1, PT2 ... electrode for capacitors; R0, R11 ~ R14, R21 ~ R24, R31 ~ R35 ... RF resistive element; RDV1 ... first resistor voltage divider circuit; RDV2 ... second resistor voltage divider circuit; RE1, RE2 ... resistive film pattern; SB ... soldered ball; SI ... substrate; SR1, SR2, SR3 ... interlayer dielectric; SR4 ... soldering-resistance layer; TI1, TI2 ... wiring membrane; 11 ... RFIC; 11P ... IO terminal; 12 ... control IC; 12P ... IO terminal; 13 ... aerial coil; 14B ... the resistive element in variable-capacitance element portion; 14R ... control voltage applies circuit; 15A, 15B ... holding wire; 16 ... data carrying wires; 17A, 17B ... ESD protection device; 18 ... baseband circuit; 20 ... install and use circuit board again; 21 ... wiring electrode again; 22 ... installation terminal; 101,102 ... variable-capacitance element; 110 ... the built-in RFIC of variable-capacitance element; 201 ... communicator.
Claims (10)
1. a variable-capacitance element, is characterized in that,
Possess:
Ferroelectric capacitor, its electrode for capacitors that there is ferroelectric film and clip this ferroelectric film, and capacitance changes according to the control voltage value putting on described capacitor electrode interpolar; With
Control voltage applies circuit, it has resistor voltage divider circuit, this resistor voltage divider circuit is connected with multiple control terminal respectively by first end, multiple resistive elements that second end is connected with shared tie point are formed, described control voltage applies circuit and the voltage of described shared tie point is put on described ferroelectric capacitor
Described resistor voltage divider circuit is made up of the many groups resistor voltage divider circuit sharing tie point separate, and described resistor voltage divider circuit becomes direct current nonconducting state by described ferroelectric capacitor or other capacitor.
2. variable-capacitance element according to claim 1, is characterized in that,
Described multiple resistive element is the resistance pattern be arranged on substrate, and described resistance pattern is formed as, and the resistance value of described multiple resistive element becomes the ratio carrying out the power of 2 as benchmark minimum in their resistance value.
3. variable-capacitance element according to claim 2, is characterized in that,
Form described variable-capacitance element and described control voltage applying circuit by film process on the substrate, same layer on the substrate forms described multiple resistive element by same process.
4. variable-capacitance element according to claim 3, is characterized in that,
The RF resistive element that the two ends that described variable-capacitance element comprises multiple and described ferroelectric capacitor are connected in parallel, these RF resistive elements are arranged on the layer different from described multiple resistive element.
5. a high-frequency apparatus, is characterized in that,
Described high-frequency apparatus is configured to the RFIC arranging the variable-capacitance element described in claim 1 or 2 at a chip and be connected with the described control terminal of described variable-capacitance element.
6. a communicator, the RFIC that there is aerial coil, the variable-capacitance element be connected with described aerial coil and be connected with described variable-capacitance element,
The feature of described communicator is,
Described variable-capacitance element possesses:
Ferroelectric capacitor, its electrode for capacitors that there is ferroelectric film and clip this ferroelectric film, and capacitance changes according to the control voltage value putting on described capacitor electrode interpolar; With
Control voltage applies circuit, it has resistor voltage divider circuit, this resistor voltage divider circuit is connected with multiple control terminal respectively by first end, multiple resistive elements that second end is connected with shared tie point are formed, described control voltage applies circuit and the voltage of described shared tie point is put on described ferroelectric capacitor
Described resistor voltage divider circuit is made up of the many groups resistor voltage divider circuit sharing tie point separate, described resistor voltage divider circuit becomes direct current nonconducting state by described ferroelectric capacitor or other capacitor, described variable-capacitance element be set to when waiting with described organize the described control terminal that at least one resistor voltage divider circuit in resistor voltage divider circuit is connected be all H level or be all the state of the bleeder current that do not circulate of state of L level.
7. communicator according to claim 6, is characterized in that,
Described multiple resistive element is the resistance pattern be arranged on substrate, and described resistance pattern is formed as, and the resistance value of described multiple resistive element becomes the ratio carrying out the power of 2 as benchmark minimum in their resistance value.
8. communicator according to claim 7, is characterized in that,
Form described variable-capacitance element and described control voltage applying circuit by film process on the substrate, same layer on the substrate forms described multiple resistive element by same process.
9. communicator according to claim 8, is characterized in that,
The RF resistive element that the two ends that described variable-capacitance element comprises multiple and described ferroelectric capacitor are connected in parallel, these RF resistive elements are arranged on the layer different from described multiple resistive element.
10. the communicator according to claim 6 or 7, is characterized in that,
Described communicator is configured to arrange at a chip RFIC be connected with the described control terminal of described variable-capacitance element.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-130976 | 2012-06-08 | ||
| JP2012130976 | 2012-06-08 | ||
| PCT/JP2013/064578 WO2013183472A1 (en) | 2012-06-08 | 2013-05-27 | Variable capacitance element, high-frequency device, and communication device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204442303U true CN204442303U (en) | 2015-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201390000526.9U Expired - Fee Related CN204442303U (en) | 2012-06-08 | 2013-05-27 | Variable-capacitance element, high-frequency apparatus and communicator |
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| Country | Link |
|---|---|
| JP (1) | JP5673865B2 (en) |
| CN (1) | CN204442303U (en) |
| WO (1) | WO2013183472A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107564726A (en) * | 2016-06-30 | 2018-01-09 | 太阳诱电株式会社 | Variable condenser and electronic installation |
| TWI694581B (en) * | 2018-12-26 | 2020-05-21 | 財團法人工業技術研究院 | Electrostatic discharge protection apparatus and integrated passive device with capacitor |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014155862A1 (en) * | 2013-03-29 | 2014-10-02 | 株式会社村田製作所 | Variable-capacitance element and communication device |
| JP6142627B2 (en) * | 2013-03-29 | 2017-06-07 | 株式会社村田製作所 | substrate |
| CN206134667U (en) * | 2014-04-03 | 2017-04-26 | 株式会社村田制作所 | Variable capacitor |
| JP5839629B1 (en) | 2014-07-18 | 2016-01-06 | デクセリアルズ株式会社 | Non-contact communication device, antenna circuit, antenna drive device, non-contact power supply device, tuning method, discovery method, and program for realizing these methods |
| WO2016129304A1 (en) | 2015-02-12 | 2016-08-18 | 株式会社村田製作所 | Thin-film device |
| CN107251178B (en) | 2015-02-27 | 2019-03-22 | 株式会社村田制作所 | Variable-capacitance element |
| JP6489202B2 (en) * | 2015-02-27 | 2019-03-27 | 株式会社村田製作所 | Capacitors |
| WO2017159283A1 (en) * | 2016-03-18 | 2017-09-21 | 株式会社村田製作所 | Capacitive element |
| CN209418326U (en) * | 2017-05-26 | 2019-09-20 | 株式会社村田制作所 | Capacitor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5816934U (en) * | 1981-07-21 | 1983-02-02 | 株式会社東芝 | Digital to analog conversion circuit |
| JPH077366A (en) * | 1993-06-18 | 1995-01-10 | Advantest Corp | Temperature correcting circuit of narrow band pass filter by crystal filter |
| JP4502609B2 (en) * | 2003-07-28 | 2010-07-14 | 京セラ株式会社 | Variable capacitor |
| JP4541071B2 (en) * | 2004-08-25 | 2010-09-08 | カルソニックカンセイ株式会社 | Indicator and initialization drive |
| JP2006295905A (en) * | 2005-03-16 | 2006-10-26 | Semiconductor Energy Lab Co Ltd | Information processing apparatus |
| CN103891046B (en) * | 2011-10-26 | 2016-05-04 | 株式会社村田制作所 | Telecommunication circuit |
| WO2013061985A1 (en) * | 2011-10-26 | 2013-05-02 | 株式会社村田製作所 | Variable capacitance element and high-frequency device |
-
2013
- 2013-05-27 JP JP2013557963A patent/JP5673865B2/en not_active Expired - Fee Related
- 2013-05-27 CN CN201390000526.9U patent/CN204442303U/en not_active Expired - Fee Related
- 2013-05-27 WO PCT/JP2013/064578 patent/WO2013183472A1/en active Application Filing
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107564726A (en) * | 2016-06-30 | 2018-01-09 | 太阳诱电株式会社 | Variable condenser and electronic installation |
| US10284181B2 (en) | 2016-06-30 | 2019-05-07 | Taiyo Yuden Co., Ltd. | Variable capacitor and electronic device |
| TWI694581B (en) * | 2018-12-26 | 2020-05-21 | 財團法人工業技術研究院 | Electrostatic discharge protection apparatus and integrated passive device with capacitor |
| US11088135B2 (en) | 2018-12-26 | 2021-08-10 | Industrial Technology Research Institute | Electrostatic discharge protection apparatus and integrated passive device with capacitors |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5673865B2 (en) | 2015-02-18 |
| WO2013183472A1 (en) | 2013-12-12 |
| JPWO2013183472A1 (en) | 2016-01-28 |
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