CN204442296U - Superwide band low noise amplifying circuit - Google Patents
Superwide band low noise amplifying circuit Download PDFInfo
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- CN204442296U CN204442296U CN201520220532.6U CN201520220532U CN204442296U CN 204442296 U CN204442296 U CN 204442296U CN 201520220532 U CN201520220532 U CN 201520220532U CN 204442296 U CN204442296 U CN 204442296U
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- amplifying circuit
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Abstract
The utility model discloses a kind of superwide band low noise amplifying circuit, relate to electronic technology field, comprise the first transistor, transistor seconds, third transistor, first resistance, second resistance, 3rd resistance, 4th resistance, 5th resistance, 6th resistance, 7th resistance, first electric capacity, second electric capacity, DC power supply, AC power, the first transistor and transistor seconds form Darlington transistor and realize high-gain, first resistance, 4th resistance, 6th resistance forms the combined resistance feedback of chiasma type, share out the work and help one another, optimize input noise respectively, input impedance and output impedance, first electric capacity C1 and the second electric capacity C2 compensates high-frequency gain, alleviate the gain prompt drop in broadband, improve band gain frequency flatness.The utility model is mainly used in the superwide band low noise amplifying circuit in the fields such as communication and measurement, trailer-mounted radar.
Description
Technical field
The utility model relates to electronic technology field, particularly relates to a kind of superwide band low noise amplifying circuit being applied to the fields such as communication and measurement, trailer-mounted radar.
Background technology
Superwide band low noise amplifying circuit is super broad band radio communication conveyer basic element of character.Requiring in frequency range, superwide band low noise amplifying circuit needs to possess high gain, low noise factor and good port match simultaneously.There is following shortcoming in existing superwide band low noise amplifying circuit: in ultra broadband, gain flatness is poor.
Utility model content
The utility model object solves the superwide band low noise amplifying circuit technical problem such as gain flatness difference in ultra broadband.
In order to solve the problems of the technologies described above, technical solution adopted in the utility model is:
Superwide band low noise amplifying circuit described in the utility model, comprise the first transistor, transistor seconds, third transistor, first resistance, second resistance, 3rd resistance, 4th resistance, 5th resistance, 6th resistance, 7th resistance, first electric capacity, second electric capacity, DC power supply, AC power, the base stage of described the first transistor connects one end of described AC power and one end of described first resistance respectively, the emitter of described the first transistor connects one end of described first electric capacity and one end of described second resistance respectively, the collector electrode of described the first transistor connects the base stage of described transistor seconds and one end of described 3rd resistance respectively, the other end of described AC power, the other end of described first electric capacity and the equal ground connection of the other end of described second resistance, the described other end of the 3rd resistance and the collector electrode of described third transistor are as the signal output part of described amplifying circuit, the emitter of described transistor seconds connects described one end of 4th resistance and the base stage of described third transistor respectively, the collector electrode of described transistor seconds connects one end of described 5th resistance, the other end of described 4th resistance connects the other end of described first resistance and one end of described 6th resistance respectively, the other end of described 5th resistance connects the positive pole of described DC power supply, the emitter of described third transistor connects the other end of described 6th resistance respectively, one end of described 7th resistance and one end of described second electric capacity, the other end of described 7th resistance and the equal ground connection of the other end of described second electric capacity.
Compared with prior art, the beneficial effects of the utility model:
Superwide band low noise amplifying circuit described in the utility model, by the first electric capacity and the second capacitance compensation high-frequency gain, alleviates the gain prompt drop in broadband, improves band gain frequency flatness.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of superwide band low noise amplifying circuit described in the utility model.
Embodiment
Below in conjunction with Figure of description, the utility model is further described.
As shown in Figure 1, superwide band low noise amplifying circuit described in the utility model, comprise the first transistor Q1, transistor seconds Q2A, third transistor Q2B, first resistance Rf1, second resistance Re1, 3rd resistance Rf2, 4th resistance R1, 5th resistance Rcc, 6th resistance R2, 7th resistance Re2, first electric capacity C1, second electric capacity C2, DC power supply Vcc, AC power Vs, the base stage of described the first transistor Q1 connects one end of described AC power Vs and one end of described first resistance Rf1 respectively, the emitter of described the first transistor Q1 connects one end of described first electric capacity C1 and one end of described second resistance Re1 respectively, the collector electrode of described the first transistor Q1 connects the base stage of described transistor seconds Q2A and one end of described 3rd resistance Rf2 respectively, the other end of described AC power Vs, the other end of described first electric capacity C1 and the equal ground connection of the other end of described second resistance Re1, the described other end of the 3rd resistance Rf2 and the collector electrode of described third transistor Q2B are as the signal output part Vout of described amplifying circuit, the emitter of described transistor seconds Q2A connects described one end of 4th resistance R1 and the base stage of described third transistor Q2B respectively, the collector electrode of described transistor seconds Q2A connects one end of described 5th resistance Rcc, the other end of described 4th resistance R1 connects the other end of described first resistance Rf1 and one end of described 6th resistance R2 respectively, the other end of described 5th resistance Rcc connects the positive pole of described DC power supply Vcc, the emitter of described third transistor Q2B connects the other end of described 6th resistance R2 respectively, one end of described 7th resistance Re2 and one end of described second electric capacity C2, the other end of described 7th resistance Re2 and the equal ground connection of the other end of described second electric capacity C2.
Wherein, described first resistance Rf1 provides the base current of described the first transistor Q1, and does not introduce additional noise.
Wherein, described 4th resistance R1 adjusts the emitter current of described transistor seconds Q2A.
Wherein, described 6th resistance R2 adjusts the emitter current of described third transistor Q2B.
Wherein, described 3rd resistance Rf2 stablizes the collector current of described the first transistor Q1.
Wherein, described 5th resistance Rcc stablizes the collector current of described transistor seconds Q2A.
Wherein, described first electric capacity C1 and described second electric capacity C2 compensates high-frequency gain.
In sum, superwide band low noise amplifying circuit tool provided by the utility model has the following advantages:
Described the first transistor Q2A and transistor seconds Q2B forms Darlington transistor and realizes high-gain.
Described first resistance Rf1, described 4th resistance R1, described 6th resistance R2 form the combined resistance feedback of chiasma type, share out the work and help one another, optimize input noise, input impedance and output impedance respectively.
Described first electric capacity C1 and described second electric capacity C2 compensates high-frequency gain, alleviates the gain prompt drop in broadband, improves band gain frequency flatness.
More than show and describe principal character of the present utility model and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present utility model; under the prerequisite not departing from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (3)
1. a superwide band low noise amplifying circuit, it is characterized in that: comprise the first transistor, transistor seconds, third transistor, first resistance, second resistance, 3rd resistance, 4th resistance, 5th resistance, 6th resistance, 7th resistance, first electric capacity, second electric capacity, DC power supply, AC power, the base stage of described the first transistor connects one end of described AC power and one end of described first resistance respectively, the emitter of described the first transistor connects one end of described first electric capacity and one end of described second resistance respectively, the collector electrode of described the first transistor connects the base stage of described transistor seconds and one end of described 3rd resistance respectively, the other end of described AC power, the other end of described first electric capacity and the equal ground connection of the other end of described second resistance, the described other end of the 3rd resistance and the collector electrode of described third transistor are as the signal output part of described amplifying circuit, the emitter of described transistor seconds connects described one end of 4th resistance and the base stage of described third transistor respectively, the collector electrode of described transistor seconds connects one end of described 5th resistance, the other end of described 4th resistance connects the other end of described first resistance and one end of described 6th resistance respectively, the other end of described 5th resistance connects the positive pole of described DC power supply, the emitter of described third transistor connects the other end of described 6th resistance respectively, one end of described 7th resistance and one end of described second electric capacity, the other end of described 7th resistance and the equal ground connection of the other end of described second electric capacity.
2. superwide band low noise amplifying circuit according to claim 1, is characterized in that: described first electric capacity and described second capacitance compensation high-frequency gain.
3. superwide band low noise amplifying circuit according to claim 1, is characterized in that: described first resistance, described 4th resistance and described 6th resistance form the combined resistance feedback of chiasma type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520220532.6U CN204442296U (en) | 2015-04-14 | 2015-04-14 | Superwide band low noise amplifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520220532.6U CN204442296U (en) | 2015-04-14 | 2015-04-14 | Superwide band low noise amplifying circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204442296U true CN204442296U (en) | 2015-07-01 |
Family
ID=53610109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520220532.6U Expired - Fee Related CN204442296U (en) | 2015-04-14 | 2015-04-14 | Superwide band low noise amplifying circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204442296U (en) |
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2015
- 2015-04-14 CN CN201520220532.6U patent/CN204442296U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150701 Termination date: 20160414 |
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| CF01 | Termination of patent right due to non-payment of annual fee |