CN204441329U - Deep ultraviolet light source - Google Patents
Deep ultraviolet light source Download PDFInfo
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- CN204441329U CN204441329U CN201520152640.4U CN201520152640U CN204441329U CN 204441329 U CN204441329 U CN 204441329U CN 201520152640 U CN201520152640 U CN 201520152640U CN 204441329 U CN204441329 U CN 204441329U
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- emitting diode
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- transparency protected
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Abstract
The utility model discloses a kind of deep ultraviolet light source; comprise deep-UV light-emitting diode and mounting bracket; deep-UV light-emitting diode is fixed on mounting bracket; the outer setting of deep-UV light-emitting diode has transparency protected dielectric layer; transparency protected dielectric layer forms bulge-structure on the end face of deep-UV light-emitting diode, and transparency protected dielectric layer forms sunk structure on the side of deep-UV light-emitting diode.By forming protruding transparency protected dielectric layer at the end face of deep-UV light-emitting diode, and form recessed transparent protective dielectric layer in side, effectively can improve the deep UV loss that side and front end face bring due to total reflection, improve UV radiation dose, improve the light transmission efficiency of deep ultraviolet light source; In addition, adopt transparency protected dielectric layer to protect deep-UV light-emitting diode, and without the need to adopting quartz lens, effectively reduce packaging cost.
Description
Technical field
The utility model relates to ultraviolet source, particularly relates to a kind of deep ultraviolet light source.
Background technology
The killing action of outside line to bacterium, virus generally completed in several seconds, and will reach ultraviolet effect for traditional chlorine and ozonation process and need more than 20 minutes.Ultraviolet Disinfection is in all disinfection technologies, and broad-spectrum is the highest, almost has efficient killing action to all bacteriums, virus.But ultraviolet light source but extremely lacks, the ultraviolet light source generally applied at present mainly mercury lamp.And along with the progress of technology, deep-UV light-emitting diode have low in energy consumption, the life-span long, pollution-free.Compare mercury lamp, deep-UV light-emitting diode wavelength can be adjusted by semi-conducting material production technology, by the adjustment scientist of wavelength find deep UV also have widely application examples as skin treating, military remote sensing etc.As shown in Figure 1, deep-UV light-emitting diode 101 is encapsulated in Can 102 by deep ultraviolet light source usually that adopt deep-UV light-emitting diode to make in prior art, and the top of Can 102 arranges quartz lens 103 to regulate lighting angle.And adopt quartz lens 103, the ultraviolet light occurred deep-UV light-emitting diode 101 is caused serious loss and packaging cost is higher.How to design that a kind of light transmission efficiency is high and the deep ultraviolet light source that packaging cost is low is technical problem to be solved in the utility model.
Summary of the invention
The utility model provides a kind of deep ultraviolet light source, realizes the light transmission efficiency of raising deep ultraviolet light source and reduces packaging cost.
For solving the problems of the technologies described above, the utility model is achieved by the following technical solutions:
A kind of deep ultraviolet light source; comprise deep-UV light-emitting diode and mounting bracket; described deep-UV light-emitting diode is fixed on described mounting bracket; the outer setting of described deep-UV light-emitting diode has transparency protected dielectric layer; described transparency protected dielectric layer forms bulge-structure on the end face of described deep-UV light-emitting diode, and described transparency protected dielectric layer forms sunk structure on the side of described deep-UV light-emitting diode.
Further; described mounting bracket forms mounting groove; described deep-UV light-emitting diode is arranged in described mounting groove; form annular space between the side of described deep-UV light-emitting diode and the side of described mounting groove, described transparency protected dielectric layer forms described sunk structure in described annular space.
Further, described mounting bracket is provided with two electrode terminals, the electrode of described deep-UV light-emitting diode connects with corresponding described electrode terminal.
Further, be also provided with between described deep-UV light-emitting diode and described mounting bracket heat sink.
Further, described transparency protected dielectric layer is resin or silica gel.
Compared with prior art, advantage of the present utility model and good effect are: the deep ultraviolet light source that the utility model provides, by forming protruding transparency protected dielectric layer at the end face of deep-UV light-emitting diode, and form recessed transparent protective dielectric layer in side, effectively can improve the deep UV loss that side and front end face bring due to total reflection, improve UV radiation dose, improve the light transmission efficiency of deep ultraviolet light source; In addition, adopt transparency protected dielectric layer to protect deep-UV light-emitting diode, and without the need to adopting quartz lens, effectively reduce packaging cost.
After reading embodiment of the present utility model by reference to the accompanying drawings, other features of the present utility model and advantage will become clearly.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the encapsulation schematic diagram of deep ultraviolet light source in prior art;
Fig. 2 is the structural representation one of the utility model deep ultraviolet light source embodiment;
Fig. 3 is the structural representation two of the utility model deep ultraviolet light source embodiment.
Embodiment
For making the object of the utility model embodiment, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the utility model embodiment, technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 2; the present embodiment deep ultraviolet light source; comprise deep-UV light-emitting diode 1 and mounting bracket 2; described deep-UV light-emitting diode 1 is fixed on described mounting bracket 2; the outer setting of described deep-UV light-emitting diode 1 has transparency protected dielectric layer 3; described transparency protected dielectric layer 3 forms bulge-structure 31 on the end face of described deep-UV light-emitting diode 1, and described transparency protected dielectric layer 3 forms sunk structure 32 on the side of described deep-UV light-emitting diode 1.
Specifically; deep-UV light-emitting diode 1 in the present embodiment deep ultraviolet light source is fixed on mounting bracket 2; and in order to protect deep-UV light-emitting diode 1; adopt and transparency protected dielectric layer 3 is set outside deep-UV light-emitting diode 1 to replace quartz lens of the prior art; wherein, transparency protected dielectric layer 3 will form bulge-structure 31 and sunk structure 32 respectively at deep-UV light-emitting diode 1 end face and side.Carry out in luminescence process at deep-UV light-emitting diode 1, end face due to deep-UV light-emitting diode 1 has bulge-structure 31, the convex surface of bulge-structure 31 will reduce incidence angle, now, the light that deep-UV light-emitting diode 1 sends can be refracted in air by bulge-structure 31, to increase luminous power; In addition, side due to deep-UV light-emitting diode 1 has sunk structure 32, the concave surface of sunk structure 32 also will reduce the incidence angle of deep-UV light-emitting diode 1 in side, now, the light that deep-UV light-emitting diode 1 sends can be refracted in air by sunk structure 32, further to increase luminous power.
Preferably; mounting bracket 2 is formed mounting groove (not shown); described deep-UV light-emitting diode 1 is arranged in described mounting groove; form annular space (not shown) between the side of described deep-UV light-emitting diode 1 and the side of described mounting groove 2, described transparency protected dielectric layer 3 forms described sunk structure 32 in described annular space.Concrete, by forming sunk structure 32 in annular space, effectively can increase the curvature of the concave surface that sunk structure 32 is formed, to make incident sideways angle be less than critical angle, thus further increasing the light emission rate of side.
Wherein, described mounting bracket 2 is provided with two electrode terminals 21, the electrode 11 of described deep-UV light-emitting diode 1 connects with corresponding described electrode terminal 21.And transparency protected dielectric layer 3 is the transparent material such as resin or silica gel.
In addition, the deep-UV light-emitting diode 1 in the present embodiment can directly be fixed on mounting bracket 2, or, as shown in Figure 3, between deep-UV light-emitting diode 1 and described mounting bracket 2, be also provided with heat sink 3.
The present embodiment deep ultraviolet light source, by forming protruding transparency protected dielectric layer at the end face of deep-UV light-emitting diode, and form recessed transparent protective dielectric layer in side, effectively can improve the deep UV loss that side and front end face bring due to total reflection, improve UV radiation dose, improve the light transmission efficiency of deep ultraviolet light source; In addition, adopt transparency protected dielectric layer to protect deep-UV light-emitting diode, and without the need to adopting quartz lens, effectively reduce packaging cost.
The method for packing of the present embodiment deep ultraviolet light source is specially: be placed on by deep-UV light-emitting diode after on mounting bracket; upper liquid clear medium is dripped on the end face of deep-UV light-emitting diode; pass through Action of Gravity Field; liquid clear medium slowly infiltrate deep-UV light-emitting diode side and mounting bracket on; under capillary effect; form the transparency protected dielectric layer of bulge-structure at the end face of deep-UV light-emitting diode, and on the side of deep-UV light-emitting diode, form the transparency protected dielectric layer of sunk structure.
Last it is noted that above embodiment is only in order to illustrate the technical solution of the utility model, be not intended to limit; Although be described in detail the utility model with reference to previous embodiment, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of each embodiment technical scheme of the utility model.
Claims (5)
1. a deep ultraviolet light source; it is characterized in that; comprise deep-UV light-emitting diode and mounting bracket; described deep-UV light-emitting diode is fixed on described mounting bracket; the outer setting of described deep-UV light-emitting diode has transparency protected dielectric layer; described transparency protected dielectric layer forms bulge-structure on the end face of described deep-UV light-emitting diode, and described transparency protected dielectric layer forms sunk structure on the side of described deep-UV light-emitting diode.
2. deep ultraviolet light source according to claim 1; it is characterized in that; described mounting bracket forms mounting groove; described deep-UV light-emitting diode is arranged in described mounting groove; form annular space between the side of described deep-UV light-emitting diode and the side of described mounting groove, described transparency protected dielectric layer forms described sunk structure in described annular space.
3. deep ultraviolet light source according to claim 1, is characterized in that, described mounting bracket is provided with two electrode terminals, and the electrode of described deep-UV light-emitting diode connects with corresponding described electrode terminal.
4. deep ultraviolet light source according to claim 1, is characterized in that, is also provided with heat sink between described deep-UV light-emitting diode and described mounting bracket.
5. deep ultraviolet light source according to claim 1, is characterized in that, described transparency protected dielectric layer is resin or silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520152640.4U CN204441329U (en) | 2015-03-18 | 2015-03-18 | Deep ultraviolet light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520152640.4U CN204441329U (en) | 2015-03-18 | 2015-03-18 | Deep ultraviolet light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204441329U true CN204441329U (en) | 2015-07-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520152640.4U Withdrawn - After Issue CN204441329U (en) | 2015-03-18 | 2015-03-18 | Deep ultraviolet light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204441329U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701438A (en) * | 2015-03-18 | 2015-06-10 | 青岛杰生电气有限公司 | Deep-ultraviolet light source and encapsulating method thereof |
| CN108321279A (en) * | 2018-03-16 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of deep ultraviolet LED light source inorganic encapsulated structure |
| US11362242B2 (en) | 2019-01-24 | 2022-06-14 | Lextar Electronics Corporation | Light-emitting device |
-
2015
- 2015-03-18 CN CN201520152640.4U patent/CN204441329U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701438A (en) * | 2015-03-18 | 2015-06-10 | 青岛杰生电气有限公司 | Deep-ultraviolet light source and encapsulating method thereof |
| WO2016146068A1 (en) * | 2015-03-18 | 2016-09-22 | 青岛杰生电气有限公司 | Deep ultraviolet light source and packaging method therefor |
| CN104701438B (en) * | 2015-03-18 | 2017-11-03 | 青岛杰生电气有限公司 | Deep ultraviolet light source and its method for packing |
| CN108321279A (en) * | 2018-03-16 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of deep ultraviolet LED light source inorganic encapsulated structure |
| US11362242B2 (en) | 2019-01-24 | 2022-06-14 | Lextar Electronics Corporation | Light-emitting device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150701 Effective date of abandoning: 20171103 |
|
| AV01 | Patent right actively abandoned |