CN204406010U - A kind of full solid thin film electrochomeric glass - Google Patents
A kind of full solid thin film electrochomeric glass Download PDFInfo
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- CN204406010U CN204406010U CN201520078562.8U CN201520078562U CN204406010U CN 204406010 U CN204406010 U CN 204406010U CN 201520078562 U CN201520078562 U CN 201520078562U CN 204406010 U CN204406010 U CN 204406010U
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Abstract
The utility model provides a kind of full solid thin film electrochomeric glass, comprise the first glass substrate, first glass substrate deposits ion barrier, the first transparency conducting layer, electrochromic layer and the second transparency conducting layer successively, wherein, electrochromic layer inner homogeneous is scattered with ion conductor layer nano-grain and ion storage layer nano-grain.This electrochomeric glass structure is simple, and processing procedure simplifies, and ion diffuse path shortens, reaction velocity accelerates, and meanwhile, it is lower to fall production cost.
Description
Technical field
The utility model belongs to photo chromic glass construction applications, especially a kind of full solid thin film electrochomeric glass.
Background technology
Electrochromism refers under DC Electric Field, the phenomenon of the optical property generation continuous reversible of material change, shows as the process that reversible change occurs for the color of material and transparency intuitively.Electrochromic material is divided into inorganic electrochromic material and organic electrochromic material.The Typical Representative of inorganic electrochromic material is tungstic acid, at present, take WO3 as the electrochromic device industrialization of functional material.And organic electrochromic material mainly contains polythiophene class and derivant, purple sieve essence class, tetrathiafulvalene, metallo phthalocyanine etc.Practical application is obtained with the electrochromic material that purple sieve essence class is functional material.
The structure of existing most of full solid thin film electrochomeric glass is: be respectively glass, ion barrier, the first transparency conducting layer, inorganic photochromic layer, inorganic ions conductor layer, inorganic ions storage layer, the second transparency conducting layer and protective seam (such as Authorization Notice No. is the Chinese patent-full solid thin film electrochomeric glass of CN 202953940 U) from top to bottom.But, due to the inorganic photochromic layer in existing electrochomeric glass and inorganic ions accommodating layer, all independent stratification of inorganic ions storage layer three-layer thin-film, in preparation process, need to implement depositing operation separately, frequency of depositing is many, processing procedure is complicated, and the number of plies of film is more, corresponding thickness is larger, ion diffuse path length, reaction velocity is slow; Meanwhile, the penetrance of visible ray is lower, and lightness is also decreased.In addition, material cost waste is also large.
Summary of the invention
The utility model aims to provide a kind of full solid thin film electrochomeric glass, and this electrochomeric glass structure is simple, and processing procedure simplifies, and ion diffuse path shortens, reaction velocity accelerates, and meanwhile, it is lower to fall production cost.
A kind of full solid thin film electrochomeric glass, comprise the first glass substrate, first glass substrate deposits ion barrier, the first transparency conducting layer, electrochromic layer and the second transparency conducting layer successively, wherein, electrochromic layer inner homogeneous is scattered with ion conductor layer nano-grain and ion storage layer nano-grain.
The utility model is by by electrochromism layer material and ion conductor layer material, ion storage layer material forming sputtering film simultaneously, make ion conductor layer material and ion storage layer material all with Nanoparticulate agglomerate uniformly dispersing in electrochromic layer, achieve electrochromic layer of the prior art, ion conductor layer, ion storage layer conjunction three be one, decrease frequency of depositing, simplify processing procedure; Further, reduce the thickness of whole rete to a certain extent, ion diffuse path shortens, and reaction velocity accelerates; Meanwhile, improve visible light transmissivity; In addition, decrease the consumption of electrochromic layer, ion conductor layer and ion storage layer material, saved raw materials cost.
Ion barrier inner homogeneous is scattered with and intercepts ultraviolet, ultrared nano-grain.Such design, not only can improve the shielding property of electrochomeric glass, meanwhile, also by ion barrier of the prior art and low-radiation film layer being united two into one, decreasing frequency of depositing, simplifying processing procedure; Further, reduce the thickness of whole rete to a certain extent, improve visible light transmissivity; Also save raw materials cost.
In specific implementation process, also can Deposition of protective layer on the second transparency conducting layer, this protective seam preferably can adopt ion barrier; protective seam arranges the second glass substrate outward again; the two sides visual effect that both can realize low emissivity glass is identical, also can protect the material film of its inside meanwhile.
Meanwhile, when protective seam adopts ion barrier, its inside also can intercept ultraviolet, ultrared nano-grain by uniformly dispersing, strengthens its radiation-proof effect further.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Now illustrate embodiment of the present utility model by reference to the accompanying drawings:
As shown in Figure 1, a kind of full solid thin film electrochomeric glass, comprise the first glass substrate 1, first glass substrate 1 deposits ion barrier 2, first transparency conducting layer 3, electrochromic layer 4 and the second transparency conducting layer 5 successively, wherein, electrochromic layer 4 inner homogeneous is scattered with ion conductor layer nano-grain 7 and ion storage layer nano-grain 8.
The utility model is by by electrochromic layer 4 material and ion conductor layer material, ion storage layer material forming sputtering film simultaneously, make ion conductor layer material and ion storage layer material all with Nanoparticulate agglomerate uniformly dispersing in electrochromic layer 4, achieve electrochromic layer 4 of the prior art, ion conductor layer, ion storage layer conjunction three be one, decrease frequency of depositing, simplify processing procedure; Further, reduce the thickness of whole rete to a certain extent, ion diffuse path shortens, and reaction velocity accelerates; Meanwhile, improve visible light transmissivity; In addition, decrease the consumption of electrochromic layer 4, ion conductor layer and ion storage layer material, saved raw materials cost.
Ion conductor layer material of the present utility model and ion storage layer material all can select Authorization Notice No. for the inorganic ions conductor layer material described in the Chinese patent-full solid thin film electrochomeric glass of CN 202953940 U and inorganic ions storage layer material.
As shown in Figure 1, ion barrier 2 inner homogeneous is scattered with and intercepts ultraviolet, ultrared nano-grain 9.Such design, not only can improve the shielding property of electrochomeric glass, meanwhile, also by ion barrier of the prior art and low-radiation film layer being united two into one, decreasing frequency of depositing, simplifying processing procedure; Further, reduce the thickness of whole rete to a certain extent, improve visible light transmissivity; Also save raw materials cost.Wherein, obstruct ultraviolet, ultrared nano material can select Authorization Notice No. for the material of the Low emissivity composite bed described in a kind of full solid thin film electrochomeric glass of CN 202953940 U; Also obstruct ultraviolet, infrared material that nano-titanium oxide or nano zine oxide or nano silicon oxide or nano indium tin oxide or nano aluminum tin-oxide or Nanometer-sized Antimony Doped Tin etc. are common can be selected.
In specific implementation process; also can Deposition of protective layer 6 on second transparency conducting layer 5; this protective seam 6 preferably can adopt ion barrier (i.e. the second ion barrier); protective seam 6 is outer arranges the second glass substrate 10(as shown in Figure 1 again); the two sides visual effect that both can realize low emissivity glass is identical; meanwhile, also can protect the material film of its inside.Certainly, protective seam 6 also can adopt other the thin layer (such as Authorization Notice No. is the Chinese patent of CN 202953940 U) formed by the nitride of silicon, the oxide of silicon or titanyl compound.
Meanwhile, when protective seam 6 adopts ion barrier, its inside also can uniformly dispersing intercept ultraviolet, ultrared nano-grain 9(as shown in Figure 1), further strengthen its radiation-proof effect.
Claims (4)
1. a full solid thin film electrochomeric glass, comprise the first glass substrate, first glass substrate deposits ion barrier, the first transparency conducting layer, electrochromic layer and the second transparency conducting layer successively, it is characterized in that: electrochromic layer inner homogeneous is scattered with ion conductor layer nano-grain and ion storage layer nano-grain.
2. a kind of full solid thin film electrochomeric glass according to claim 1, is characterized in that: ion barrier inner homogeneous is scattered with and intercepts ultraviolet, ultrared nano-grain.
3. a kind of full solid thin film electrochomeric glass according to claim 1, is characterized in that: Deposition of protective layer on the second transparency conducting layer, and this protective seam adopts ion barrier, and protective seam arranges the second glass substrate outward again.
4. a kind of full solid thin film electrochomeric glass according to claim 3, is characterized in that: protective seam inside also uniformly dispersing intercepts ultraviolet, ultrared nano-grain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520078562.8U CN204406010U (en) | 2015-02-04 | 2015-02-04 | A kind of full solid thin film electrochomeric glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520078562.8U CN204406010U (en) | 2015-02-04 | 2015-02-04 | A kind of full solid thin film electrochomeric glass |
Publications (1)
| Publication Number | Publication Date |
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| CN204406010U true CN204406010U (en) | 2015-06-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520078562.8U Expired - Fee Related CN204406010U (en) | 2015-02-04 | 2015-02-04 | A kind of full solid thin film electrochomeric glass |
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| CN (1) | CN204406010U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646494A (en) * | 2018-06-14 | 2018-10-12 | 深圳市易快来科技股份有限公司 | A kind of electrochromic device and preparation method thereof and electronic product |
| CN111897170A (en) * | 2020-08-07 | 2020-11-06 | 中国科学院广州能源研究所 | All-solid-state electrochromic device and preparation method thereof |
-
2015
- 2015-02-04 CN CN201520078562.8U patent/CN204406010U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646494A (en) * | 2018-06-14 | 2018-10-12 | 深圳市易快来科技股份有限公司 | A kind of electrochromic device and preparation method thereof and electronic product |
| CN111897170A (en) * | 2020-08-07 | 2020-11-06 | 中国科学院广州能源研究所 | All-solid-state electrochromic device and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150617 Termination date: 20220204 |
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| CF01 | Termination of patent right due to non-payment of annual fee |